JP6613116B2 - 半導体装置、及び半導体装置の作製方法 - Google Patents

半導体装置、及び半導体装置の作製方法 Download PDF

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JP6613116B2
JP6613116B2 JP2015228423A JP2015228423A JP6613116B2 JP 6613116 B2 JP6613116 B2 JP 6613116B2 JP 2015228423 A JP2015228423 A JP 2015228423A JP 2015228423 A JP2015228423 A JP 2015228423A JP 6613116 B2 JP6613116 B2 JP 6613116B2
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semiconductor
conductor
transistor
insulator
oxide
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JP2016111351A5 (ja
JP2016111351A (ja
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耕生 野田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of El Displays (AREA)
JP2015228423A 2014-12-02 2015-11-24 半導体装置、及び半導体装置の作製方法 Active JP6613116B2 (ja)

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JP2014244302 2014-12-02
JP2014244302 2014-12-02

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JP2019199656A Division JP6828119B2 (ja) 2014-12-02 2019-11-01 表示装置

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JP2016111351A JP2016111351A (ja) 2016-06-20
JP2016111351A5 JP2016111351A5 (ja) 2018-12-27
JP6613116B2 true JP6613116B2 (ja) 2019-11-27

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JP2015228423A Active JP6613116B2 (ja) 2014-12-02 2015-11-24 半導体装置、及び半導体装置の作製方法
JP2019199656A Active JP6828119B2 (ja) 2014-12-02 2019-11-01 表示装置
JP2021007058A Active JP7111851B2 (ja) 2014-12-02 2021-01-20 表示装置
JP2022116430A Active JP7165838B2 (ja) 2014-12-02 2022-07-21 半導体装置
JP2022169642A Active JP7502392B2 (ja) 2014-12-02 2022-10-24 半導体装置
JP2023171121A Active JP7610671B2 (ja) 2014-12-02 2023-10-02 半導体装置
JP2024225223A Active JP7814484B2 (ja) 2014-12-02 2024-12-20 半導体装置
JP2026015976A Pending JP2026074140A (ja) 2014-12-02 2026-02-03 半導体装置

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JP2019199656A Active JP6828119B2 (ja) 2014-12-02 2019-11-01 表示装置
JP2021007058A Active JP7111851B2 (ja) 2014-12-02 2021-01-20 表示装置
JP2022116430A Active JP7165838B2 (ja) 2014-12-02 2022-07-21 半導体装置
JP2022169642A Active JP7502392B2 (ja) 2014-12-02 2022-10-24 半導体装置
JP2023171121A Active JP7610671B2 (ja) 2014-12-02 2023-10-02 半導体装置
JP2024225223A Active JP7814484B2 (ja) 2014-12-02 2024-12-20 半導体装置
JP2026015976A Pending JP2026074140A (ja) 2014-12-02 2026-02-03 半導体装置

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KR102447148B1 (ko) 2017-03-13 2022-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102727034B1 (ko) * 2019-09-03 2024-11-07 삼성디스플레이 주식회사 표시 장치 및 제조 방법
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