KR102436265B1 - 반도체 장치, 반도체 장치의 제작 방법, 모듈, 및 전자 기기 - Google Patents

반도체 장치, 반도체 장치의 제작 방법, 모듈, 및 전자 기기 Download PDF

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KR102436265B1
KR102436265B1 KR1020150170374A KR20150170374A KR102436265B1 KR 102436265 B1 KR102436265 B1 KR 102436265B1 KR 1020150170374 A KR1020150170374 A KR 1020150170374A KR 20150170374 A KR20150170374 A KR 20150170374A KR 102436265 B1 KR102436265 B1 KR 102436265B1
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conductor
semiconductor
insulator
transistor
addition
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KR20160066525A (ko
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고세이 노다
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
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    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of El Displays (AREA)
KR1020150170374A 2014-12-02 2015-12-02 반도체 장치, 반도체 장치의 제작 방법, 모듈, 및 전자 기기 Active KR102436265B1 (ko)

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KR1020220104624A KR102651755B1 (ko) 2014-12-02 2022-08-22 반도체 장치, 반도체 장치의 제작 방법, 모듈, 및 전자 기기

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JPJP-P-2014-244302 2014-12-02
JP2014244302 2014-12-02

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KR102436265B1 true KR102436265B1 (ko) 2022-08-26

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KR1020150170374A Active KR102436265B1 (ko) 2014-12-02 2015-12-02 반도체 장치, 반도체 장치의 제작 방법, 모듈, 및 전자 기기
KR1020220104624A Active KR102651755B1 (ko) 2014-12-02 2022-08-22 반도체 장치, 반도체 장치의 제작 방법, 모듈, 및 전자 기기
KR1020240039547A Active KR102862143B1 (ko) 2014-12-02 2024-03-22 반도체 장치, 반도체 장치의 제작 방법, 모듈, 및 전자 기기
KR1020250132486A Pending KR20250144966A (ko) 2014-12-02 2025-09-16 반도체 장치, 반도체 장치의 제작 방법, 모듈, 및 전자 기기

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KR1020240039547A Active KR102862143B1 (ko) 2014-12-02 2024-03-22 반도체 장치, 반도체 장치의 제작 방법, 모듈, 및 전자 기기
KR1020250132486A Pending KR20250144966A (ko) 2014-12-02 2025-09-16 반도체 장치, 반도체 장치의 제작 방법, 모듈, 및 전자 기기

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US (3) US20160155849A1 (enExample)
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US9812587B2 (en) * 2015-01-26 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10134878B2 (en) * 2016-01-14 2018-11-20 Applied Materials, Inc. Oxygen vacancy of IGZO passivation by fluorine treatment
KR102583770B1 (ko) 2016-09-12 2023-10-06 삼성디스플레이 주식회사 메모리 트랜지스터 및 이를 갖는 표시장치
KR102447148B1 (ko) 2017-03-13 2022-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102727034B1 (ko) * 2019-09-03 2024-11-07 삼성디스플레이 주식회사 표시 장치 및 제조 방법
DE102023125283B4 (de) * 2022-10-25 2026-01-22 Lg Display Co., Ltd. Dünnschichttransistor, Verfahren zur Herstellung desselben und Anzeigevorrichtung, die diesen aufweist

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