JP6607681B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6607681B2
JP6607681B2 JP2015041903A JP2015041903A JP6607681B2 JP 6607681 B2 JP6607681 B2 JP 6607681B2 JP 2015041903 A JP2015041903 A JP 2015041903A JP 2015041903 A JP2015041903 A JP 2015041903A JP 6607681 B2 JP6607681 B2 JP 6607681B2
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JP
Japan
Prior art keywords
transistor
semiconductor
film
insulating film
semiconductor layer
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JP2015041903A
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English (en)
Japanese (ja)
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JP2015181159A (ja
JP2015181159A5 (enExample
Inventor
知昭 熱海
修平 長塚
圭恵 森若
佑太 遠藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2015041903A priority Critical patent/JP6607681B2/ja
Publication of JP2015181159A publication Critical patent/JP2015181159A/ja
Publication of JP2015181159A5 publication Critical patent/JP2015181159A5/ja
Priority to JP2019191830A priority patent/JP6954974B2/ja
Application granted granted Critical
Publication of JP6607681B2 publication Critical patent/JP6607681B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Electroluminescent Light Sources (AREA)
JP2015041903A 2014-03-07 2015-03-04 半導体装置 Active JP6607681B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015041903A JP6607681B2 (ja) 2014-03-07 2015-03-04 半導体装置
JP2019191830A JP6954974B2 (ja) 2014-03-07 2019-10-21 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014045406 2014-03-07
JP2014045406 2014-03-07
JP2015041903A JP6607681B2 (ja) 2014-03-07 2015-03-04 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2019005715A Division JP6818780B2 (ja) 2014-03-07 2019-01-17 半導体装置
JP2019191830A Division JP6954974B2 (ja) 2014-03-07 2019-10-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2015181159A JP2015181159A (ja) 2015-10-15
JP2015181159A5 JP2015181159A5 (enExample) 2018-03-29
JP6607681B2 true JP6607681B2 (ja) 2019-11-20

Family

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Family Applications (6)

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JP2015041903A Active JP6607681B2 (ja) 2014-03-07 2015-03-04 半導体装置
JP2019005715A Active JP6818780B2 (ja) 2014-03-07 2019-01-17 半導体装置
JP2019191830A Active JP6954974B2 (ja) 2014-03-07 2019-10-21 半導体装置
JP2020218718A Active JP7111797B2 (ja) 2014-03-07 2020-12-28 半導体装置
JP2022116395A Withdrawn JP2022137292A (ja) 2014-03-07 2022-07-21 半導体装置
JP2024050769A Withdrawn JP2024088670A (ja) 2014-03-07 2024-03-27 半導体装置

Family Applications After (5)

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JP2019005715A Active JP6818780B2 (ja) 2014-03-07 2019-01-17 半導体装置
JP2019191830A Active JP6954974B2 (ja) 2014-03-07 2019-10-21 半導体装置
JP2020218718A Active JP7111797B2 (ja) 2014-03-07 2020-12-28 半導体装置
JP2022116395A Withdrawn JP2022137292A (ja) 2014-03-07 2022-07-21 半導体装置
JP2024050769A Withdrawn JP2024088670A (ja) 2014-03-07 2024-03-27 半導体装置

Country Status (2)

Country Link
US (7) US9653611B2 (enExample)
JP (6) JP6607681B2 (enExample)

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