JP6557490B2 - 不揮発性金属材料のエッチング方法 - Google Patents

不揮発性金属材料のエッチング方法 Download PDF

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JP6557490B2
JP6557490B2 JP2015063656A JP2015063656A JP6557490B2 JP 6557490 B2 JP6557490 B2 JP 6557490B2 JP 2015063656 A JP2015063656 A JP 2015063656A JP 2015063656 A JP2015063656 A JP 2015063656A JP 6557490 B2 JP6557490 B2 JP 6557490B2
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metal
layer
etching
organometallic compound
stack
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Japanese (ja)
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JP2015192150A5 (cg-RX-API-DMAC7.html
JP2015192150A (ja
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メイファ・シェン
ハーミート・シン
サマンサ・エス．・エイチ．・タン
ジェフリー・マークス
トルステン・リル
リチャード・ピー．・ジャネク
ウェンビン・ヤン
プリス・シャーマ
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP2015063656A 2014-03-27 2015-03-26 不揮発性金属材料のエッチング方法 Active JP6557490B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201461971032P 2014-03-27 2014-03-27
US61/971,032 2014-03-27
US14/325,911 2014-07-08
US14/325,911 US9130158B1 (en) 2014-03-27 2014-07-08 Method to etch non-volatile metal materials

Publications (3)

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JP2015192150A JP2015192150A (ja) 2015-11-02
JP2015192150A5 JP2015192150A5 (cg-RX-API-DMAC7.html) 2018-05-10
JP6557490B2 true JP6557490B2 (ja) 2019-08-07

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JP2015063653A Active JP6789614B2 (ja) 2014-03-27 2015-03-26 不揮発性金属材料をエッチングする方法

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US (3) US9257638B2 (cg-RX-API-DMAC7.html)
JP (2) JP6557490B2 (cg-RX-API-DMAC7.html)
KR (2) KR102377668B1 (cg-RX-API-DMAC7.html)
CN (2) CN104953027B (cg-RX-API-DMAC7.html)
SG (2) SG10201502437TA (cg-RX-API-DMAC7.html)
TW (2) TWI651773B (cg-RX-API-DMAC7.html)

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Publication number Publication date
KR102377668B1 (ko) 2022-03-22
TW201608748A (zh) 2016-03-01
US20150340603A1 (en) 2015-11-26
SG10201502437TA (en) 2015-10-29
CN104953027A (zh) 2015-09-30
KR20150112757A (ko) 2015-10-07
JP6789614B2 (ja) 2020-11-25
US9257638B2 (en) 2016-02-09
KR102318520B1 (ko) 2021-10-28
US20150280113A1 (en) 2015-10-01
TWI651773B (zh) 2019-02-21
CN108682737A (zh) 2018-10-19
TWI650886B (zh) 2019-02-11
JP2015216360A (ja) 2015-12-03
TW201603135A (zh) 2016-01-16
JP2015192150A (ja) 2015-11-02
SG10201502438RA (en) 2015-10-29
US9130158B1 (en) 2015-09-08
US9391267B2 (en) 2016-07-12
CN104953027B (zh) 2018-05-22
US20150280114A1 (en) 2015-10-01
KR20150112896A (ko) 2015-10-07

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