JP6482144B2 - 接合基板および接合基板の製造方法 - Google Patents

接合基板および接合基板の製造方法 Download PDF

Info

Publication number
JP6482144B2
JP6482144B2 JP2017535855A JP2017535855A JP6482144B2 JP 6482144 B2 JP6482144 B2 JP 6482144B2 JP 2017535855 A JP2017535855 A JP 2017535855A JP 2017535855 A JP2017535855 A JP 2017535855A JP 6482144 B2 JP6482144 B2 JP 6482144B2
Authority
JP
Japan
Prior art keywords
bonding
substrate
copper plate
bonded
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017535855A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018506496A (ja
Inventor
谷 信
信 谷
康崇 粟倉
康崇 粟倉
健 賀來
健 賀來
隆 海老ヶ瀬
隆 海老ヶ瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=57796895&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP6482144(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JP2018506496A publication Critical patent/JP2018506496A/ja
Application granted granted Critical
Publication of JP6482144B2 publication Critical patent/JP6482144B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • C04B35/645Pressure sintering
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/14Semiconductor wafers
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04Ceramic interlayers
    • C04B2237/08Non-oxidic interlayers
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/125Metallic interlayers based on noble metals, e.g. silver
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/126Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/126Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/127The active component for bonding being a refractory metal
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/36Non-oxidic
    • C04B2237/366Aluminium nitride
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/36Non-oxidic
    • C04B2237/368Silicon nitride
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40Metallic
    • C04B2237/407Copper
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/60Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/72Forming laminates or joined articles comprising at least two interlayers directly next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2017535855A 2015-12-28 2016-12-22 接合基板および接合基板の製造方法 Active JP6482144B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2015/086477 2015-12-28
JP2015086477 2015-12-28
PCT/JP2016/005212 WO2017115461A1 (en) 2015-12-28 2016-12-22 Bonded substrate and method for manufacturing bonded substrate

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019020642A Division JP6883596B2 (ja) 2015-12-28 2019-02-07 接合基板および接合基板の製造方法

Publications (2)

Publication Number Publication Date
JP2018506496A JP2018506496A (ja) 2018-03-08
JP6482144B2 true JP6482144B2 (ja) 2019-03-13

Family

ID=57796895

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2017535855A Active JP6482144B2 (ja) 2015-12-28 2016-12-22 接合基板および接合基板の製造方法
JP2019020642A Active JP6883596B2 (ja) 2015-12-28 2019-02-07 接合基板および接合基板の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019020642A Active JP6883596B2 (ja) 2015-12-28 2019-02-07 接合基板および接合基板の製造方法

Country Status (4)

Country Link
US (1) US10784182B2 (enExample)
EP (2) EP3598485B1 (enExample)
JP (2) JP6482144B2 (enExample)
WO (1) WO2017115461A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112018000457T5 (de) * 2017-02-23 2019-09-26 Ngk Insulators, Ltd. Isoliertes wärmeableitungssubstrat
EP3606299B2 (en) * 2017-03-30 2025-07-30 Kabushiki Kaisha Toshiba Ceramic-copper circuit substrate and semiconductor device using same
WO2020044593A1 (ja) * 2018-08-28 2020-03-05 三菱マテリアル株式会社 銅/セラミックス接合体、絶縁回路基板、及び、銅/セラミックス接合体の製造方法、及び、絶縁回路基板の製造方法
EP3890006A4 (en) * 2018-11-30 2022-08-17 Kyocera Corporation PRINTED CIRCUIT BOARD, ELECTRONIC DEVICE, AND ELECTRONIC MODULE
JP6609073B1 (ja) * 2019-01-15 2019-11-20 株式会社日本マイクロニクス プローブ基板及び電気的接続装置
JP7289910B2 (ja) * 2019-03-14 2023-06-12 日本碍子株式会社 接合基板及び接合基板の製造方法
WO2021015122A1 (ja) 2019-07-23 2021-01-28 日本碍子株式会社 接合基板および接合基板の製造方法
WO2021111508A1 (ja) 2019-12-03 2021-06-10 日本碍子株式会社 接合基板及び接合基板の製造方法
WO2021111513A1 (ja) * 2019-12-03 2021-06-10 日本碍子株式会社 接合基板及び接合基板の製造方法
KR20220131242A (ko) * 2020-01-23 2022-09-27 덴카 주식회사 세라믹스-구리 복합체, 및 세라믹스-구리 복합체의 제조 방법
CN116134607B (zh) * 2020-07-27 2025-03-11 株式会社东芝 接合体、电路基板、半导体装置及接合体的制造方法
CN116018884B (zh) * 2020-10-20 2024-10-18 株式会社东芝 接合体及采用其的陶瓷电路基板以及半导体装置
WO2022085711A1 (ja) * 2020-10-22 2022-04-28 株式会社 東芝 接合体、セラミックス銅回路基板、および半導体装置
CN115172311B (zh) * 2021-04-02 2025-09-16 世界先进积体电路股份有限公司 半导体结构及其制作方法
CN114300364A (zh) * 2021-11-25 2022-04-08 郴州功田电子陶瓷技术有限公司 一种氮化铝陶瓷基板金属化方法
CN114799227B (zh) * 2022-03-28 2023-11-14 河南科技大学 基于活字印刷原理的微型离散组合式金属增材制造基板
CN120390735A (zh) * 2023-02-07 2025-07-29 三菱综合材料株式会社 金属-氮化物层叠体及绝缘电路基板
TWI876868B (zh) * 2024-02-06 2025-03-11 同欣電子工業股份有限公司 金屬陶瓷基板及其製造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950270A (ja) 1982-09-14 1984-03-23 Suzuki Motor Co Ltd 自動車変速機の変速操作装置
JPS59108420A (ja) 1982-12-14 1984-06-22 Nec Corp 過負荷検出機構をもつadpcm復号回路
JPS59177155A (ja) 1983-03-28 1984-10-06 Toyota Motor Corp 流体の昇温方法
US5251803A (en) 1988-07-22 1993-10-12 Mitsubishi Denki Kabushiki Kaisha Ceramic-metal composite substrate and method for producing the same
DE3924225C2 (de) 1988-07-22 1994-01-27 Mitsubishi Electric Corp Verfahren zur Herstellung eines Keramik-Metall-Verbundsubstrats sowie Keramik-Metall-Verbundsubstrat
JPH02177463A (ja) 1988-12-28 1990-07-10 Mitsubishi Electric Corp セラミック―金属複合基板の製造方法
JP3095187B2 (ja) 1991-07-30 2000-10-03 同和鉱業株式会社 金属・セラミックス接合用ろう材
JP3302714B2 (ja) 1992-01-27 2002-07-15 株式会社東芝 セラミックス−金属接合体
JPH0769750A (ja) * 1993-06-29 1995-03-14 Tokuyama Corp セラミック接合構造体
JP3629783B2 (ja) 1995-12-07 2005-03-16 電気化学工業株式会社 回路基板
JP3182354B2 (ja) * 1996-11-12 2001-07-03 電気化学工業株式会社 回路基板及びその評価方法
JP2000335983A (ja) 1999-05-28 2000-12-05 Denki Kagaku Kogyo Kk 接合体の製造方法
JP2002043482A (ja) 2000-05-17 2002-02-08 Ngk Insulators Ltd 電子回路用部材及びその製造方法並びに電子部品
KR100565139B1 (ko) * 2001-02-22 2006-03-30 니뽄 가이시 가부시키가이샤 전자 회로용 부재 및 그 제조 방법과 전자 부품
JP2002359453A (ja) 2001-03-29 2002-12-13 Ngk Insulators Ltd 回路基板及びその製造方法
JP2003192462A (ja) * 2001-12-25 2003-07-09 Toshiba Corp 窒化珪素回路基板およびその製造方法
JP2003283064A (ja) 2002-03-26 2003-10-03 Ngk Spark Plug Co Ltd セラミック回路基板及びその製造方法
JP2004253736A (ja) 2003-02-21 2004-09-09 Ngk Insulators Ltd ヒートスプレッダモジュール
JP4014528B2 (ja) * 2003-03-28 2007-11-28 日本碍子株式会社 ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール
HUE041380T2 (hu) * 2009-09-15 2019-05-28 Toshiba Kk Eljárás kerámia áramköri kártya gyártására
EP2544515A4 (en) * 2010-03-02 2014-07-30 Tokuyama Corp METHOD FOR PRODUCING A METAL-COATED SUBSTRATE
JP5191527B2 (ja) * 2010-11-19 2013-05-08 日本発條株式会社 積層体および積層体の製造方法
TWI575680B (zh) * 2011-08-12 2017-03-21 三菱綜合材料股份有限公司 功率模組用基板、附有散熱片功率模組用基板、功率模組及功率模組用基板之製造方法
JP2013179263A (ja) * 2012-02-01 2013-09-09 Mitsubishi Materials Corp パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
WO2013115359A1 (ja) 2012-02-01 2013-08-08 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、パワーモジュール用基板の製造方法、および銅部材接合用ペースト
JP6456676B2 (ja) 2014-09-10 2019-01-23 Jx金属株式会社 金属セラミック接合基板及び、その製造方法

Also Published As

Publication number Publication date
JP2019104680A (ja) 2019-06-27
US10784182B2 (en) 2020-09-22
JP2018506496A (ja) 2018-03-08
JP6883596B2 (ja) 2021-06-09
EP3398205B1 (en) 2019-10-30
US20170323842A1 (en) 2017-11-09
EP3598485B1 (en) 2020-10-07
EP3398205A1 (en) 2018-11-07
EP3598485A3 (en) 2020-02-12
WO2017115461A1 (en) 2017-07-06
EP3598485A2 (en) 2020-01-22

Similar Documents

Publication Publication Date Title
JP6482144B2 (ja) 接合基板および接合基板の製造方法
TWI695778B (zh) 接合體、附散熱器之電力模組用基板、散熱器、接合體之製造方法、附散熱器之電力模組用基板之製造方法、及散熱器之製造方法
CN107534033B (zh) 接合体、自带散热器的功率模块用基板、散热器及接合体的制造方法、自带散热器的功率模块用基板的制造方法、散热器的制造方法
JP6319643B2 (ja) セラミックス−銅接合体およびその製造方法
KR102154882B1 (ko) 파워 모듈
KR102154373B1 (ko) 파워 모듈
KR20150133191A (ko) 파워 모듈용 기판의 제조 방법
JP5938390B2 (ja) パワーモジュール
CN104718616A (zh) 自带散热器的功率模块用基板、自带散热器的功率模块及自带散热器的功率模块用基板的制造方法
JP7136212B2 (ja) 銅/セラミックス接合体、絶縁回路基板、及び、銅/セラミックス接合体の製造方法、及び、絶縁回路基板の製造方法
JP5991103B2 (ja) ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール、及びヒートシンク付パワーモジュール用基板の製造方法
TWI661516B (zh) 接合體,附散熱器電源模組用基板,散熱器,接合體的製造方法,附散熱器電源模組用基板的製造方法及散熱器的製造方法
WO2021033421A1 (ja) 銅/セラミックス接合体、絶縁回路基板、及び、銅/セラミックス接合体の製造方法、絶縁回路基板の製造方法
JP2005026252A (ja) セラミック回路基板、放熱モジュール、および半導体装置
JP6259625B2 (ja) 絶縁基板と冷却器の接合構造体、その製造方法、パワー半導体モジュール、及びその製造方法
JP2022023954A (ja) セラミックス/アルミニウム接合体、絶縁回路基板、ledモジュール、セラミックス部材
JP6323103B2 (ja) パワーモジュール用基板及びヒートシンク付パワーモジュール用基板
JP6299442B2 (ja) パワーモジュール
WO2023008562A1 (ja) 銅/セラミックス接合体、および、絶縁回路基板
JP7054073B2 (ja) ヒートシンク付き絶縁回路基板
JP7622909B1 (ja) 半導体装置の製造方法
WO2016167217A1 (ja) 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、及び、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、ヒートシンクの製造方法
JP2021031315A (ja) 銅/セラミックス接合体、絶縁回路基板、及び、銅/セラミックス接合体の製造方法、絶縁回路基板の製造方法
KR102363709B1 (ko) 구리/티탄/알루미늄 접합체, 절연 회로 기판, 히트싱크가 부착된 절연 회로 기판, 파워 모듈, led 모듈, 열전 모듈

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170704

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20170704

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20171220

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180109

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180509

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180710

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180907

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181005

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20181218

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190111

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190208

R150 Certificate of patent or registration of utility model

Ref document number: 6482144

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150