JP6457235B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6457235B2
JP6457235B2 JP2014214965A JP2014214965A JP6457235B2 JP 6457235 B2 JP6457235 B2 JP 6457235B2 JP 2014214965 A JP2014214965 A JP 2014214965A JP 2014214965 A JP2014214965 A JP 2014214965A JP 6457235 B2 JP6457235 B2 JP 6457235B2
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Prior art keywords
oxide semiconductor
transistor
semiconductor layer
region
layer
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Japanese (ja)
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JP2015109432A5 (enExample
JP2015109432A (ja
Inventor
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2015109432A5 publication Critical patent/JP2015109432A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2014214965A 2013-10-22 2014-10-22 半導体装置 Active JP6457235B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014214965A JP6457235B2 (ja) 2013-10-22 2014-10-22 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013219046 2013-10-22
JP2013219046 2013-10-22
JP2014214965A JP6457235B2 (ja) 2013-10-22 2014-10-22 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018237625A Division JP2019062230A (ja) 2013-10-22 2018-12-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2015109432A JP2015109432A (ja) 2015-06-11
JP2015109432A5 JP2015109432A5 (enExample) 2017-11-30
JP6457235B2 true JP6457235B2 (ja) 2019-01-23

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JP2014214965A Active JP6457235B2 (ja) 2013-10-22 2014-10-22 半導体装置
JP2018237625A Withdrawn JP2019062230A (ja) 2013-10-22 2018-12-19 半導体装置

Family Applications After (1)

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JP2018237625A Withdrawn JP2019062230A (ja) 2013-10-22 2018-12-19 半導体装置

Country Status (5)

Country Link
US (2) US9812586B2 (enExample)
JP (2) JP6457235B2 (enExample)
KR (1) KR102274986B1 (enExample)
DE (1) DE102014220672A1 (enExample)
TW (2) TWI670859B (enExample)

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US10304859B2 (en) * 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
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WO2017006207A1 (en) * 2015-07-08 2017-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
US20170104033A1 (en) * 2015-10-13 2017-04-13 Shenzhen China Star Optoelectronics Technology Co., Ltd. Array substrate and manufacturing method for the same
CN105355589B (zh) * 2015-10-13 2018-07-17 深圳市华星光电技术有限公司 阵列基板及其制造方法
TW201804613A (zh) * 2016-07-26 2018-02-01 聯華電子股份有限公司 氧化物半導體裝置
CN107037643A (zh) * 2017-06-01 2017-08-11 厦门天马微电子有限公司 液晶显示面板及显示装置
WO2018236359A1 (en) * 2017-06-20 2018-12-27 Intel Corporation Thin film core-shell fin and nanowire transistors
WO2025046388A1 (ja) * 2023-08-25 2025-03-06 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
WO2025068833A1 (ja) * 2023-09-29 2025-04-03 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

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US20180069133A1 (en) 2018-03-08
US9812586B2 (en) 2017-11-07
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