TWI670859B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI670859B
TWI670859B TW107119203A TW107119203A TWI670859B TW I670859 B TWI670859 B TW I670859B TW 107119203 A TW107119203 A TW 107119203A TW 107119203 A TW107119203 A TW 107119203A TW I670859 B TWI670859 B TW I670859B
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TW
Taiwan
Prior art keywords
transistor
oxide semiconductor
semiconductor layer
region
layer
Prior art date
Application number
TW107119203A
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English (en)
Chinese (zh)
Other versions
TW201834255A (zh
Inventor
山崎舜平
Original Assignee
日商半導體能源硏究所股份有限公司
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Publication of TW201834255A publication Critical patent/TW201834255A/zh
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Publication of TWI670859B publication Critical patent/TWI670859B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW107119203A 2013-10-22 2014-10-17 半導體裝置 TWI670859B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013219046 2013-10-22
JP2013-219046 2013-10-22

Publications (2)

Publication Number Publication Date
TW201834255A TW201834255A (zh) 2018-09-16
TWI670859B true TWI670859B (zh) 2019-09-01

Family

ID=52825439

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107119203A TWI670859B (zh) 2013-10-22 2014-10-17 半導體裝置
TW103135982A TWI635616B (zh) 2013-10-22 2014-10-17 半導體裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103135982A TWI635616B (zh) 2013-10-22 2014-10-17 半導體裝置

Country Status (5)

Country Link
US (2) US9812586B2 (enExample)
JP (2) JP6457235B2 (enExample)
KR (1) KR102274986B1 (enExample)
DE (1) DE102014220672A1 (enExample)
TW (2) TWI670859B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10304859B2 (en) * 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
TWI642186B (zh) 2013-12-18 2018-11-21 日商半導體能源研究所股份有限公司 半導體裝置
WO2017006207A1 (en) * 2015-07-08 2017-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
US20170104033A1 (en) * 2015-10-13 2017-04-13 Shenzhen China Star Optoelectronics Technology Co., Ltd. Array substrate and manufacturing method for the same
CN105355589B (zh) * 2015-10-13 2018-07-17 深圳市华星光电技术有限公司 阵列基板及其制造方法
TW201804613A (zh) * 2016-07-26 2018-02-01 聯華電子股份有限公司 氧化物半導體裝置
CN107037643A (zh) * 2017-06-01 2017-08-11 厦门天马微电子有限公司 液晶显示面板及显示装置
WO2018236359A1 (en) * 2017-06-20 2018-12-27 Intel Corporation Thin film core-shell fin and nanowire transistors
WO2025046388A1 (ja) * 2023-08-25 2025-03-06 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
WO2025068833A1 (ja) * 2023-09-29 2025-04-03 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130009209A1 (en) * 2011-07-08 2013-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

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