JP6455979B2 - レジスト層付ブランク、その製造方法、マスクブランクおよびインプリント用モールドブランク、ならびに転写用マスク、インプリント用モールドおよびそれらの製造方法 - Google Patents
レジスト層付ブランク、その製造方法、マスクブランクおよびインプリント用モールドブランク、ならびに転写用マスク、インプリント用モールドおよびそれらの製造方法 Download PDFInfo
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- JP6455979B2 JP6455979B2 JP2015051710A JP2015051710A JP6455979B2 JP 6455979 B2 JP6455979 B2 JP 6455979B2 JP 2015051710 A JP2015051710 A JP 2015051710A JP 2015051710 A JP2015051710 A JP 2015051710A JP 6455979 B2 JP6455979 B2 JP 6455979B2
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- VSRBKQFNFZQRBM-UHFFFAOYSA-N tuaminoheptane Chemical compound CCCCCC(C)N VSRBKQFNFZQRBM-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015051710A JP6455979B2 (ja) | 2014-03-18 | 2015-03-16 | レジスト層付ブランク、その製造方法、マスクブランクおよびインプリント用モールドブランク、ならびに転写用マスク、インプリント用モールドおよびそれらの製造方法 |
| KR1020167028502A KR102316973B1 (ko) | 2014-03-18 | 2015-03-18 | 레지스트층을 구비한 블랭크, 그 제조 방법, 마스크 블랭크 및 임프린트용 몰드 블랭크와, 전사용 마스크, 임프린트용 몰드 및 그들의 제조 방법 |
| TW104108666A TWI638226B (zh) | 2014-03-18 | 2015-03-18 | 附阻劑層之基底、其製造方法、光罩基底及壓印用模基底、以及轉印用光罩、壓印用模及彼等之製造方法 |
| PCT/JP2015/057981 WO2015141706A1 (ja) | 2014-03-18 | 2015-03-18 | 現像促進層を有するレジスト層付ブランク |
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| JP7001374B2 (ja) * | 2017-06-19 | 2022-02-04 | 東京エレクトロン株式会社 | 成膜方法、記憶媒体及び成膜システム |
| US20220075258A1 (en) * | 2018-12-26 | 2022-03-10 | S&S Tech Co., Ltd. | Blankmask and photomask |
| KR102169572B1 (ko) * | 2018-12-26 | 2020-10-23 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 포토마스크 |
| CN113614636A (zh) * | 2019-03-07 | 2021-11-05 | Hoya株式会社 | 掩模坯料、转印用掩模的制造方法、及半导体器件的制造方法 |
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| US6727047B2 (en) * | 1999-04-16 | 2004-04-27 | Applied Materials, Inc. | Method of extending the stability of a photoresist during direct writing of an image upon the photoresist |
| JP3093632U (ja) * | 2002-03-01 | 2003-05-16 | Ｈｏｙａ株式会社 | ハーフトーン型位相シフトマスクブランク |
| TW200909997A (en) * | 2004-07-09 | 2009-03-01 | Hoya Corp | Photomask blank, photomask manufacturing method and semiconductor device manufacturing method |
| JP4935269B2 (ja) * | 2005-09-21 | 2012-05-23 | 東レ株式会社 | ポジ型感光性樹脂組成物 |
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| JP4816225B2 (ja) * | 2006-04-27 | 2011-11-16 | 凸版印刷株式会社 | レベンソン型位相シフトマスク |
| JP5053592B2 (ja) * | 2006-08-10 | 2012-10-17 | 関東化学株式会社 | ポジ型レジスト処理液組成物及び現像液 |
| JP5292818B2 (ja) * | 2008-01-11 | 2013-09-18 | ダイキン工業株式会社 | 重合性含フッ素単量体および含フッ素重合体ならびにレジストパターン形成方法 |
| TWI438562B (zh) * | 2009-01-06 | 2014-05-21 | Hoya Corp | 光罩之製造方法、圖案轉印方法、光罩基板用處理裝置及薄膜圖案化方法 |
| JP2010275498A (ja) * | 2009-06-01 | 2010-12-09 | Central Glass Co Ltd | 含フッ素化合物、含フッ素高分子化合物、レジスト組成物、トップコート組成物及びパターン形成方法 |
| JP2011073305A (ja) * | 2009-09-30 | 2011-04-14 | Hoya Corp | インプリント用モールドの製造方法 |
| JP5507380B2 (ja) * | 2010-02-23 | 2014-05-28 | 東京応化工業株式会社 | パターン形成方法 |
| JP5971122B2 (ja) * | 2011-02-01 | 2016-08-17 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| JP6254377B2 (ja) * | 2012-07-31 | 2017-12-27 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | フォトレジスト組成物およびフォトリソグラフィパターンを形成する方法 |
| JP5948187B2 (ja) * | 2012-08-30 | 2016-07-06 | 富士フイルム株式会社 | パターン形成方法、並びに、これを用いた電子デバイスの製造方法 |
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| JP2015194741A (ja) | 2015-11-05 |
| TW201602716A (zh) | 2016-01-16 |
| WO2015141706A1 (ja) | 2015-09-24 |
| TWI638226B (zh) | 2018-10-11 |
| KR20160132979A (ko) | 2016-11-21 |
| KR102316973B1 (ko) | 2021-10-22 |
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