JP6438024B2 - 高周波集積パッシブデバイス用の高周波損失を低下させた高抵抗シリコン基材 - Google Patents
高周波集積パッシブデバイス用の高周波損失を低下させた高抵抗シリコン基材 Download PDFInfo
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- JP6438024B2 JP6438024B2 JP2016534197A JP2016534197A JP6438024B2 JP 6438024 B2 JP6438024 B2 JP 6438024B2 JP 2016534197 A JP2016534197 A JP 2016534197A JP 2016534197 A JP2016534197 A JP 2016534197A JP 6438024 B2 JP6438024 B2 JP 6438024B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 86
- 229910052710 silicon Inorganic materials 0.000 title claims description 84
- 239000010703 silicon Substances 0.000 title claims description 83
- 239000000758 substrate Substances 0.000 title claims description 72
- 230000002829 reductive effect Effects 0.000 title claims description 12
- 238000000227 grinding Methods 0.000 claims description 41
- 238000005498 polishing Methods 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 230000003071 parasitic effect Effects 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 230000009467 reduction Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000000717 retained effect Effects 0.000 claims description 2
- 229910001369 Brass Inorganic materials 0.000 claims 1
- 239000010951 brass Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 83
- 238000000034 method Methods 0.000 description 63
- 230000008569 process Effects 0.000 description 36
- 239000013078 crystal Substances 0.000 description 22
- 238000002161 passivation Methods 0.000 description 10
- 238000005488 sandblasting Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000014759 maintenance of location Effects 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000013507 mapping Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
- G06K19/07771—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card the record carrier comprising means for minimising adverse effects on the data communication capability of the record carrier, e.g. minimising Eddy currents induced in a proximate metal or otherwise electromagnetically interfering object
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Integrated Circuits (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
すなわち、本発明の態様としては以下を挙げることができる:
《態様1》
高抵抗バルクシリコンを含むバルク領域(100)を有する、高周波集積パッシブデバイス用の高周波損失を低下させた高抵抗シリコン基材(100)であって、
前記基材の前面(122)に加工された表面下格子損傷保持領域(120b)をさらに有し、これが前表面を形成し、かつ前記バルク領域より上に破砕シリコン領域を含み、前記格子損傷領域が、前記基材に加工されており、前記格子損傷保持領域が、寄生表面伝導を抑制することによって、RF損失の低下を達成するように構成されていることを特徴とする、高抵抗シリコン基材(100)。
《態様2》
前記前面が、化学機械平坦化−研磨によって研磨されている、態様1に記載の基材。
《態様3》
前記前面が、構造的には単結晶シリコンである、態様1又は2に記載の基材。
《態様4》
前記格子損傷保持領域が、スライス(210)、ラッピング(220)、研削(240)、ブラシダメ−ジング(250)、レーザーマニピュレーション又は湿式ブラスト(250)によって機械的に加工されている、態様1〜3のいずれか一項に記載の基材。
《態様5》
前記研削が、回転固定研磨材研削であり、かつ/又は前記研削が、粗い研削及び微細研削を含む2段研削によって行われている、態様1〜4のいずれか一項に記載の基材。
《態様6》
前記格子損傷保持領域の上部にポリシリコン層(130)を含む、態様1〜5のいずれか一項に記載の基材。
《態様7》
前記ポリシリコン層の厚みが、0.2〜8.0μmである、態様6に記載の基材。
《態様8》
前記ポリシリコン層の厚みが、0.4〜6.0μmである、態様6又は7に記載の基材。
《態様9》
高周波集積パッシブデバイス用の、態様1〜8のいずれか一項に記載の高周波損失を低下させた高抵抗シリコン基材(100)の製造方法であって、以下を含む方法:
高抵抗シリコンを成長させること(204)、
前記成長させたシリコンからシリコンウェハーをスライスし(210)、そして前記スライスしたシリコンウェハーを薄化すること(220、240)によって前記成長したシリコンを加工し(210、220、240、270)、前記加工は、破砕したシリコンを含む格子損傷領域(120a、120b)を加工したシリコンウェハーにもたらすこと、
高抵抗バルクシリコンを含むバルク領域(110)を有する前記基材を得るために、前記加工したシリコンウェハーを研磨すること(250、272)、
前記バルク領域より上の前記格子損傷領域の少なくとも一部(120b)を前記研磨によって保持すること(260、274)、ここで格子損傷領域の少なくとの一部は、寄生表面伝導を抑制することによって前記基材のRF損失の低下を達成するように構成されること。
《態様10》
態様1〜8のいずれか一項に記載の高周波損失を低下させた高抵抗シリコン基材(100)を含む高周波集積パッシブデバイスであって、前記基材が、
高抵抗バルクシリコンを含むバルク領域(100)、及び
表面下格子損傷保持領域(120b)を有し、これは前記基材の前面に加工されており、前表面を形成し、前記バルク領域より上に破砕シリコンを含み、前記格子損傷領域は、基材に加工されており、かつ前記格子損傷保持領域は、寄生表面伝導を抑制することによって前記基材のRF損失の低下を達成するように構成されている、高周波集積パッシブデバイス。
Claims (9)
- 高周波集積パッシブデバイス用の高周波損失を低下させた高抵抗シリコン基材(100)であって、
高抵抗バルクシリコンを含むバルク領域(110)、及び
前記基材の前面(122)に加工された表面下格子損傷保持領域(120b,121,124,126)
を有し、
前記基材は、シリコンウェハー(100)であり、
前記格子損傷領域が、前記バルク領域より上に破砕シリコンを含み、
前記格子損傷領域が、前記シリコンウェハーの前表面(122)を形成し、
前記前面は、化学機械平坦化−研磨された前表面(122)であり、
前記格子損傷領域が、薄化された格子損傷領域(121,124,126)であり、かつ
前記格子損傷領域が、前記基材のRF損失の低下を達成するために構成されて、寄生表面伝導を抑制していることを特徴とする、高抵抗シリコン基材(100)。 - 前記前面が、構造的には単結晶シリコンである、請求項1に記載の基材。
- 前記格子損傷保持領域が、スライス(210)、ラッピング(220)、研削(240)、ブラシダメ−ジング(250)、レーザーマニピュレーション又は湿式ブラストによって機械的に加工されている、請求項1又は2に記載の基材。
- 前記研削が、回転固定研磨材研削であり、かつ/又は前記研削が、粗い研削及び微細研削を含む2段研削によって行われている、請求項3に記載の基材。
- 前記格子損傷保持領域の上部にポリシリコン層(130)を含む、請求項1〜4のいずれか一項に記載の基材。
- 前記ポリシリコン層の厚みが、0.2〜8.0μmである、請求項5に記載の基材。
- 前記ポリシリコン層の厚みが、0.4〜6.0μmである、請求項5又は6に記載の基材。
- 高周波集積パッシブデバイス用の、請求項1〜7のいずれか一項に記載の高周波損失を低下させた高抵抗シリコン基材(100)の製造方法であって、以下を含む方法:
高抵抗シリコンを成長させること(204)、
前記成長させたシリコンからシリコンウェハー(100)をスライスし(210)、そして前記スライスしたシリコンウェハーを薄化すること(220、240)によって前記成長したシリコンを加工し(210、220、240、270)、前記加工は、破砕したシリコンを含む格子損傷領域(120a、120b,121,124,126)を加工したシリコンウェハーにもたらすこと、
高抵抗バルクシリコンを含むバルク領域(110)を有する前記基材を得るために、前記加工したシリコンウェハーを化学機械平坦化−研磨すること(250、272)、
前記バルク領域より上の前記格子損傷領域の少なくとも一部(120b,121,124,126)を前記化学機械平坦化−研磨によって保持し、それにより前記格子損傷領域が、化学機械平坦化−研磨された前表面を形成し、かつ前記バルク領域より上に破砕シリコン領域を含むこと(260、274)、
ここで 前記基材は、シリコンウェハー(100)であり、
前記格子損傷領域が、薄化された格子損傷領域(121,124,126)であり、かつ
前記格子損傷領域が、前記基材のRF損失の低下を達成するために構成されて、寄生表面伝導を抑制していること。 - 請求項1〜7のいずれか一項に記載の高周波損失を低下させた高抵抗シリコン基材(100)を含む高周波集積パッシブデバイス。
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FI20136180A FI130149B (en) | 2013-11-26 | 2013-11-26 | High Resistive Silicon Substrate with Reduced RF Loss for RF Integrated Passive Device |
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PCT/FI2014/050910 WO2015079111A1 (en) | 2013-11-26 | 2014-11-26 | High-resistive silicon substrate with a reduced radio frequency loss for a radio-frequency integrated passive device |
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CN110402486B (zh) * | 2017-02-10 | 2023-11-28 | 环球晶圆股份有限公司 | 用于评估半导体结构的方法 |
FR3066858B1 (fr) * | 2017-05-23 | 2019-06-21 | Soitec | Procede pour minimiser une distorsion d'un signal dans un circuit radiofrequence |
CN109103582A (zh) * | 2018-08-29 | 2018-12-28 | 河海大学常州校区 | 薄膜体声波谐振器结构的纳米机械声学天线及制造方法 |
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TWI761255B (zh) * | 2021-07-08 | 2022-04-11 | 環球晶圓股份有限公司 | 晶圓及晶圓的製造方法 |
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FI130149B (en) | 2023-03-15 |
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EP3872856A1 (en) | 2021-09-01 |
JP2016541118A (ja) | 2016-12-28 |
US20150145105A1 (en) | 2015-05-28 |
TW201535716A (zh) | 2015-09-16 |
US9312345B2 (en) | 2016-04-12 |
CN105993072A (zh) | 2016-10-05 |
SG11201604259PA (en) | 2016-07-28 |
WO2015079111A1 (en) | 2015-06-04 |
CN105993072B (zh) | 2019-03-01 |
EP3872856B1 (en) | 2024-07-10 |
TWI638454B (zh) | 2018-10-11 |
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