JP6411142B2 - 保護被膜の被覆方法 - Google Patents

保護被膜の被覆方法 Download PDF

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Publication number
JP6411142B2
JP6411142B2 JP2014182918A JP2014182918A JP6411142B2 JP 6411142 B2 JP6411142 B2 JP 6411142B2 JP 2014182918 A JP2014182918 A JP 2014182918A JP 2014182918 A JP2014182918 A JP 2014182918A JP 6411142 B2 JP6411142 B2 JP 6411142B2
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JP
Japan
Prior art keywords
resin
wafer
protective
resin sheet
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014182918A
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English (en)
Japanese (ja)
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JP2016055497A (ja
Inventor
大樹 曽良
大樹 曽良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2014182918A priority Critical patent/JP6411142B2/ja
Priority to TW104124945A priority patent/TWI663045B/zh
Priority to KR1020150124864A priority patent/KR102330573B1/ko
Priority to CN201510561179.2A priority patent/CN105405753B/zh
Publication of JP2016055497A publication Critical patent/JP2016055497A/ja
Application granted granted Critical
Publication of JP6411142B2 publication Critical patent/JP6411142B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laminated Bodies (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2014182918A 2014-09-09 2014-09-09 保護被膜の被覆方法 Active JP6411142B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014182918A JP6411142B2 (ja) 2014-09-09 2014-09-09 保護被膜の被覆方法
TW104124945A TWI663045B (zh) 2014-09-09 2015-07-31 保護被膜的被覆方法
KR1020150124864A KR102330573B1 (ko) 2014-09-09 2015-09-03 보호 피막의 피복 방법
CN201510561179.2A CN105405753B (zh) 2014-09-09 2015-09-06 保护覆盖膜的覆盖方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014182918A JP6411142B2 (ja) 2014-09-09 2014-09-09 保護被膜の被覆方法

Publications (2)

Publication Number Publication Date
JP2016055497A JP2016055497A (ja) 2016-04-21
JP6411142B2 true JP6411142B2 (ja) 2018-10-24

Family

ID=55471163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014182918A Active JP6411142B2 (ja) 2014-09-09 2014-09-09 保護被膜の被覆方法

Country Status (4)

Country Link
JP (1) JP6411142B2 (zh)
KR (1) KR102330573B1 (zh)
CN (1) CN105405753B (zh)
TW (1) TWI663045B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102563929B1 (ko) * 2018-03-09 2023-08-04 삼성전자주식회사 반도체 다이들의 개별화 방법 및 반도체 패키지의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06115013A (ja) * 1992-10-01 1994-04-26 Sekisui Chem Co Ltd 表面保護フィルムおよびその使用方法
JPH10183080A (ja) * 1996-10-21 1998-07-07 Gengen Kagaku Kogyo Kk 複合フィルム及び表面被覆体の製造方法
JP2004188475A (ja) * 2002-12-13 2004-07-08 Disco Abrasive Syst Ltd レーザー加工方法
JP4666583B2 (ja) * 2005-01-18 2011-04-06 株式会社ディスコ 保護被膜の被覆方法
JP2008006379A (ja) 2006-06-29 2008-01-17 Disco Abrasive Syst Ltd 保護被膜の被覆方法
JP2009155625A (ja) * 2007-12-07 2009-07-16 Denki Kagaku Kogyo Kk 保護膜、積層フィルム及びそれを用いた加工方法
JP2011224642A (ja) * 2010-04-22 2011-11-10 Disco Corp 保護材およびアブレーション加工方法
JP5918926B2 (ja) * 2010-10-13 2016-05-18 リンテック株式会社 保護膜形成用フィルムおよび半導体チップの製造方法
JP2013021209A (ja) * 2011-07-13 2013-01-31 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2013021210A (ja) * 2011-07-13 2013-01-31 Disco Abrasive Syst Ltd ウエーハの加工方法
JP6101460B2 (ja) 2012-09-18 2017-03-22 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
CN105405753A (zh) 2016-03-16
TWI663045B (zh) 2019-06-21
CN105405753B (zh) 2020-09-18
JP2016055497A (ja) 2016-04-21
KR20160030363A (ko) 2016-03-17
TW201627132A (zh) 2016-08-01
KR102330573B1 (ko) 2021-11-25

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