JP6368094B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP6368094B2 JP6368094B2 JP2014011039A JP2014011039A JP6368094B2 JP 6368094 B2 JP6368094 B2 JP 6368094B2 JP 2014011039 A JP2014011039 A JP 2014011039A JP 2014011039 A JP2014011039 A JP 2014011039A JP 6368094 B2 JP6368094 B2 JP 6368094B2
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- film
- insulating film
- oxide semiconductor
- liquid crystal
- films
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Description
本実施の形態では、本発明の一態様である半導体装置及びその作製方法について図面を参照して説明する。
実施の形態1において平坦化膜317の変形例について、図9を用いて説明する。図9は図3と同様に、A−Bは駆動回路部の断面図であり、C−Dは画素部の断面図である。
画素301に液晶素子を用いた液晶表示装置の変形例について説明する。ここでは、図1(B)に示す画素301の上面図を図12に示す。なお、図12においては、対向電極及び液晶素子を省略する。なお、実施の形態1及び変形例1と同様の構成については、説明を省略する。ここでは、実施の形態1に示す変形例1を用いて画素電極として機能する導電膜及び平坦化膜を形成するが、適宜実施の形態1に本変形例を適用することができる。
画素301に液晶素子を用いた液晶表示装置の変形例について説明する。図3、図9及び図13に示す液晶表示装置において、透光性を有する導電膜308cは、絶縁膜314と接しているが、絶縁膜305と接する構造とすることができる。この場合、図6に示すような開口部362を設ける必要が無いため、透光性を有する導電膜316a、316b表面の段差を低減することが可能である。このため、液晶層320に含まれる液晶分子の配向乱れを低減することが可能である。また、コントラストの高い液晶表示装置を作製することができる。
ここでは、実施の形態1に示す液晶表示装置の変形例について、図16乃至図18を用いて説明する。図16において、A−Bに駆動回路部の断面図を示し、C−Dに画素部の断面図を示す。なお、ここでは、実施の形態1に示す変形例1を用いて画素電極として機能する導電膜及び平坦化膜を形成するが、適宜実施の形態1、変形例2、及び変形例3に、本変形例を適用することができる。
ここでは、実施の形態1に示す液晶表示装置の変形例について、図19、図20乃至図22を用いて説明する。図19において、A−Bに駆動回路部の断面図を示し、C−Dに画素部の断面図を示す。なお、ここでは、実施の形態1を用いて画素電極として機能する透光性を有する導電膜及び平坦化膜を形成するが、適宜実施の形態1の変形例1を用いて、画素電極として機能する透光性を有する導電膜及び平坦化膜を形成することができる。
本実施の形態では、実施の形態1とは異なる構造により、表示不良の原因となる光漏れを低減することが可能な液晶表示装置について、図23及び図24を用いて説明する。
本実施の形態では、実施の形態1及び実施の形態2の構造を有する液晶表示装置について、図25を用いて説明する。
本実施の形態では、実施の形態1及び実施の形態2に示すトランジスタに適用可能な変形例について、説明する。
実施の形態1及び実施の形態2に示すトランジスタ102、103において、必要に応じて、基板302及び導電膜304a、304b、304cの間に下地絶縁膜を設けることができる。下地絶縁膜の材料としては、酸化シリコン、酸化窒化シリコン、窒化シリコン、窒化酸化シリコン、酸化ガリウム、酸化ハフニウム、酸化イットリウム、酸化アルミニウム、酸化窒化アルミニウム等がある。なお、下地絶縁膜の材料として、窒化シリコン、酸化ガリウム、酸化ハフニウム、酸化イットリウム、酸化アルミニウム等を用いることで、基板302から不純物、代表的にはアルカリ金属、水、水素等の酸化物半導体膜308a、308bへの拡散を抑制することができる。
実施の形態1及び実施の形態2に示すトランジスタ102、103において、必要に応じて、ゲート絶縁膜として機能する絶縁膜の積層構造を変形することができる。ここでは、トランジスタ103を用いて説明する。
実施の形態1及び実施の形態2に示す液晶表示装置において、導電膜310a、310b、310c、310d、310eに用いることが可能な材料について、説明する。ここでは、トランジスタ103を用いて説明する。
実施の形態1及び実施の形態2に示すトランジスタ102、103の作製方法において、導電膜310a、310b、310d、310eを形成した後、酸化物半導体膜308a、308bを酸化雰囲気で発生させたプラズマに曝し、酸化物半導体膜308a、308bに酸素を供給することができる。酸化雰囲気としては、酸素、オゾン、一酸化二窒素、二酸化窒素等の雰囲気がある。さらに、当該プラズマ処理において、基板302側にバイアスを印加しない状態で発生したプラズマに酸化物半導体膜308a、308bを曝すことが好ましい。この結果、酸化物半導体膜308a、308bにダメージを与えず、且つ酸素を供給することが可能であり、酸化物半導体膜308a、308bに含まれる酸素欠損量を低減することができる。また、エッチング処理により酸化物半導体膜308a、308bの表面に残存する不純物、例えば、フッ素、塩素等のハロゲン等を除去することができる。
実施の形態1及び実施の形態2に示すトランジスタ102、103において、必要に応じて、酸化物半導体膜を積層構造とすることができる。ここでは、トランジスタ103を用いて説明する。
変形例5において、酸化物半導体膜を含む多層膜の構造を適宜変形することができる。ここでは、トランジスタ103を用いて説明する。
実施の形態1及び実施の形態2に示すトランジスタ102、103において、必要に応じて、酸化物半導体膜を介して対向する複数のゲート電極を設けることができる。ここでは、トランジスタ103を用いて説明する。
本実施の形態では、上記実施の形態で説明した半導体装置に含まれているトランジスタにおいて、酸化物半導体膜308a、308b、透光性を有する導電膜308c、及び多層膜336に適用可能な一態様について説明する。なお、ここでは、酸化物半導体膜を一例に用いて説明するが、多層膜に含まれる酸化物膜も同様の構造とすることができる。
単結晶酸化物半導体は、例えば、不純物濃度が低く、欠陥準位密度が低い(酸素欠損が少ない)ため、キャリア密度を低くすることができる。従って、単結晶酸化物半導体をチャネル領域に用いたトランジスタは、ノーマリーオンの電気特性になることが少ない場合がある。また、単結晶酸化物半導体は、欠陥準位密度が低いため、トラップ準位密度も低くなる場合がある。従って、単結晶酸化物半導体をチャネル領域に用いたトランジスタは、電気特性の変動が小さく、信頼性の高いトランジスタとなる場合がある。
CAAC−OSは、複数の結晶部を有する酸化物半導体膜の一つであり、ほとんどの結晶部は、一辺が100nm未満の立方体内に収まる大きさである。従って、CAAC−OSに含まれる結晶部は、一辺が10nm未満、5nm未満又は3nm未満の立方体内に収まる大きさの場合も含まれる。CAAC−OSは、微結晶酸化物半導体膜よりも欠陥準位密度が低いという特徴がある。以下、CAAC−OSについて詳細な説明を行う。
CAAC−OSに含まれる結晶部のc軸は、CAAC−OSの被形成面の法線ベクトルまたは表面の法線ベクトルに平行な方向に揃うため、CAAC−OSの形状(被形成面の断面形状または表面の断面形状)によっては互いに異なる方向を向くことがある。なお、結晶部のc軸の方向は、CAAC−OSが形成されたときの被形成面の法線ベクトルまたは表面の法線ベクトルに平行な方向となる。結晶部は、成膜することにより、または成膜後に加熱処理などの結晶化処理を行うことにより形成される。
また、CAAC−OSは、例えば多結晶である酸化物半導体スパッタリング用ターゲットを用い、スパッタリング法によって成膜する。当該スパッタリング用ターゲットにイオンが衝突すると、スパッタリング用ターゲットに含まれる結晶領域がa−b面から劈開し、a−b面に平行な面を有する平板状またはペレット状のスパッタリング粒子として剥離することがある。この場合、当該平板状またはペレット状のスパッタリング粒子が、結晶状態を維持したまま被形成面に到達することで、CAAC−OSを成膜することができる。
多結晶酸化物半導体は複数の結晶粒を含む。多結晶酸化物半導体は、例えば、非晶質部を有している場合がある。
微結晶酸化物半導体膜は、TEMによる観察像では、明確に結晶部を確認することが困難である場合がある。微結晶酸化物半導体膜に含まれる結晶部は、1nm以上100nm以下、または1nm以上10nm以下の大きさであることが多い。特に、1nm以上10nm以下、または1nm以上3nm以下の微結晶であるナノ結晶(nc:nanocrystal)を有する酸化物半導体膜を、nc−OS(nanocrystalline Oxide Semiconductor)膜と呼ぶ。また、nc−OS膜は、例えば、TEMによる観察像では、結晶粒界を明確に確認することが困難である場合がある。
次に、微結晶酸化物半導体膜の成膜方法について以下に説明する。微結晶酸化物半導体膜は、室温以上75℃以下、好ましくは室温以上50℃以下であって、酸素を含む雰囲気下にて、スパッタリング法によって成膜される。成膜雰囲気を酸素を含む雰囲気とすることで、微結晶酸化物半導体膜中における酸素欠損を低減し、微結晶領域を含む膜とすることができる。
非晶質酸化物半導体は、例えば、原子配列が無秩序であり、結晶部を有さない。または、非晶質酸化物半導体は、例えば、石英のような無定形状態を有し、原子配列に規則性が見られない。
本実施の形態では、本発明の一態様の半導体装置を適用することのできる、ヒューマンインターフェースについて説明する。特に、被検知体の近接または接触を検知可能なセンサ(以降、タッチセンサと呼ぶ)の構成例について説明する。
図33(A)、(B)は、相互容量方式のタッチセンサの構成を示す模式図と、入出力波形の模式図である。タッチセンサは一対の電極を備え、これらの間に容量が形成されている。一対の電極のうち一方の電極に入力電圧が入力される。また、他方の電極に流れる電流(または、他方の電極の電位)を検出する検出回路を備える。
図33(C)は、マトリクス状に配置された複数の容量を備えるタッチセンサの構成例を示す。
以下では、複数の画素を有する表示部とタッチセンサを備えるタッチパネルの構成例と、該タッチパネルを電子機器に組み込む場合の例について説明する。
以下では、複数の画素を有する表示部にタッチセンサを組み込んだタッチパネルの構成例について説明する。ここでは、画素に設けられる表示素子として、液晶素子を適用した例を示す。
以下、図36を用いて、上述したタッチパネルの動作について説明する。
本実施の形態では、表示装置の消費電力を低減するための駆動方法について説明する。本実施の形態の駆動方法により、画素に酸化物半導体トランジスタを適用した表示装置の更なる低消費電力化を図ることができる。以下、図37及び図38を用いて、表示装置の一例である液晶表示装置の低消費電力化について説明する。
本発明の一態様である半導体装置は、さまざまな電子機器(遊技機も含む。)に適用することができる。電子機器としては、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう。)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機、携帯型ゲーム機、携帯情報端末、音響再生装置、遊技機(パチンコ機、スロットマシン等)、ゲーム筐体が挙げられる。これらの電子機器の一例を図39に示す。
はじめに、酸化物半導体膜に存在するHの形態のエネルギーと安定性について、計算した結果を説明する。ここでは、酸化物半導体膜としてInGaZnO4を用いた。
次に、酸素欠損(Vo)中にH原子が取り込まれたVoHの形成エネルギーと荷電状態について、計算した結果を説明する。VoHは荷電状態によって形成エネルギーが異なり、フェルミエネルギーにも依存する。よって、VoHはフェルミエネルギーに依存して安定な荷電状態が異なる。ここでは、VoHが電子を1つ放出した状態を(VoH)+と示し、電子を1つ捕獲した状態を(VoH)−と示し、電子の移動のない状態を、(VoH)0と示す。(VoH)+、(VoH)−、(VoH)0それぞれの形成エネルギーを計算した。
Claims (2)
- トランジスタと、透光性を有する容量素子と、絶縁膜と、有機樹脂膜と、を有する液晶表示装置であって、
前記容量素子は、透光性を有する第1の導電膜と、透光性を有する第2の導電膜と、前記第1の導電膜及び前記第2の導電膜に挟まれた窒化物絶縁膜と、を有し、
前記トランジスタは、酸化物半導体を含むチャネル形成領域を有し、
前記トランジスタは、前記第2の導電膜と電気的に接続され、
前記第2の導電膜及び前記窒化物絶縁膜は、前記絶縁膜の開口部において、前記第1の導電膜と重なる領域を有し、
前記有機樹脂膜は、前記開口部上に設けられ、
前記第1の導電膜は、前記チャネル形成領域と比較して1×10−8倍以上1×10−1倍以下の抵抗率を有することを特徴とする液晶表示装置。 - トランジスタと、透光性を有する容量素子と、絶縁膜と、有機樹脂膜と、を有する液晶表示装置であって、
前記容量素子は、透光性を有する第1の導電膜と、透光性を有する第2の導電膜と、前記第1の導電膜及び前記第2の導電膜に挟まれた窒化物絶縁膜と、を有し、
前記トランジスタは、酸化物半導体を含むチャネル形成領域を有し、
前記トランジスタは、前記窒化物絶縁膜の第1の開口部及び前記絶縁膜の第2の開口部を介して、前記第2の導電膜と電気的に接続され、
前記第2の導電膜及び前記窒化物絶縁膜は、前記絶縁膜の第3の開口部において、前記第1の導電膜と重なる領域を有し、
前記有機樹脂膜は、前記第3の開口部上に形成され、
前記第1の導電膜は、前記チャネル形成領域と比較して1×10−8倍以上1×10−1倍以下の抵抗率を有し、
前記第1の導電膜及び前記酸化物半導体は、In、M(Mは、Al、Ti、Ga、Y、Zr、La、Ce、Nd、またはHfを表す)、及びZnを含む酸化物であることを特徴とする液晶表示装置。
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