JP6368094B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
- Publication number
- JP6368094B2 JP6368094B2 JP2014011039A JP2014011039A JP6368094B2 JP 6368094 B2 JP6368094 B2 JP 6368094B2 JP 2014011039 A JP2014011039 A JP 2014011039A JP 2014011039 A JP2014011039 A JP 2014011039A JP 6368094 B2 JP6368094 B2 JP 6368094B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- oxide semiconductor
- liquid crystal
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1341—Filling or closing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1341—Filling or closing of cells
- G02F1/13415—Drop filling process
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04108—Touchless 2D- digitiser, i.e. digitiser detecting the X/Y position of the input means, finger or stylus, also when it does not touch, but is proximate to the digitiser's interaction surface without distance measurement in the Z direction
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Human Computer Interaction (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Spectroscopy & Molecular Physics (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014011039A JP6368094B2 (ja) | 2013-01-30 | 2014-01-24 | 液晶表示装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013016257 | 2013-01-30 | ||
| JP2013016257 | 2013-01-30 | ||
| JP2013054014 | 2013-03-15 | ||
| JP2013054014 | 2013-03-15 | ||
| JP2014011039A JP6368094B2 (ja) | 2013-01-30 | 2014-01-24 | 液晶表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018129078A Division JP6619059B2 (ja) | 2013-01-30 | 2018-07-06 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014199428A JP2014199428A (ja) | 2014-10-23 |
| JP2014199428A5 JP2014199428A5 (https=) | 2017-01-12 |
| JP6368094B2 true JP6368094B2 (ja) | 2018-08-01 |
Family
ID=51221950
Family Applications (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014011039A Expired - Fee Related JP6368094B2 (ja) | 2013-01-30 | 2014-01-24 | 液晶表示装置 |
| JP2018129078A Active JP6619059B2 (ja) | 2013-01-30 | 2018-07-06 | 半導体装置 |
| JP2019205512A Active JP6835937B2 (ja) | 2013-01-30 | 2019-11-13 | 半導体装置 |
| JP2021016770A Active JP7123204B2 (ja) | 2013-01-30 | 2021-02-04 | 表示装置 |
| JP2022126930A Active JP7400038B2 (ja) | 2013-01-30 | 2022-08-09 | 表示装置 |
| JP2023205830A Active JP7607734B2 (ja) | 2013-01-30 | 2023-12-06 | 表示装置 |
| JP2024220594A Active JP7817355B2 (ja) | 2013-01-30 | 2024-12-17 | 表示装置 |
Family Applications After (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018129078A Active JP6619059B2 (ja) | 2013-01-30 | 2018-07-06 | 半導体装置 |
| JP2019205512A Active JP6835937B2 (ja) | 2013-01-30 | 2019-11-13 | 半導体装置 |
| JP2021016770A Active JP7123204B2 (ja) | 2013-01-30 | 2021-02-04 | 表示装置 |
| JP2022126930A Active JP7400038B2 (ja) | 2013-01-30 | 2022-08-09 | 表示装置 |
| JP2023205830A Active JP7607734B2 (ja) | 2013-01-30 | 2023-12-06 | 表示装置 |
| JP2024220594A Active JP7817355B2 (ja) | 2013-01-30 | 2024-12-17 | 表示装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (5) | US8981374B2 (https=) |
| JP (7) | JP6368094B2 (https=) |
| KR (12) | KR102208267B1 (https=) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6059968B2 (ja) * | 2011-11-25 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置、及び液晶表示装置 |
| KR102679509B1 (ko) | 2012-09-13 | 2024-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102459007B1 (ko) | 2012-12-25 | 2022-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI611567B (zh) * | 2013-02-27 | 2018-01-11 | 半導體能源研究所股份有限公司 | 半導體裝置、驅動電路及顯示裝置 |
| US9269315B2 (en) | 2013-03-08 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of semiconductor device |
| US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
| US9293480B2 (en) | 2013-07-10 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| US9818763B2 (en) | 2013-07-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
| KR102244553B1 (ko) | 2013-08-23 | 2021-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자 및 반도체 장치 |
| JP2015179247A (ja) | 2013-10-22 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
| CN104020621B (zh) * | 2014-05-26 | 2017-03-01 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
| JP6283273B2 (ja) * | 2014-07-01 | 2018-02-21 | 株式会社神戸製鋼所 | 薄膜トランジスタ評価用の積層構造体の評価方法 |
| WO2016080738A1 (ko) | 2014-11-20 | 2016-05-26 | 동우 화인켐 주식회사 | 필름 터치 센서 및 그의 제조 방법 |
| KR20160071735A (ko) | 2014-12-12 | 2016-06-22 | 동우 화인켐 주식회사 | 필름 터치 센서 및 그의 제조 방법 |
| US10429704B2 (en) * | 2015-03-26 | 2019-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module including the display device, and electronic device including the display device or the display module |
| US9837547B2 (en) * | 2015-05-22 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide conductor and display device including the semiconductor device |
| JP6367167B2 (ja) * | 2015-09-10 | 2018-08-01 | 東芝メモリ株式会社 | 半導体装置 |
| CN105182583B (zh) * | 2015-09-17 | 2018-11-23 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、显示装置及其健康监测方法 |
| KR101730537B1 (ko) | 2015-11-30 | 2017-04-26 | 엘지디스플레이 주식회사 | 표시장치와 그의 제조방법 |
| JP6832624B2 (ja) * | 2015-12-22 | 2021-02-24 | 三菱電機株式会社 | 液晶表示装置およびその製造方法 |
| TWI622911B (zh) * | 2017-02-14 | 2018-05-01 | 宏碁股份有限公司 | 觸控裝置 |
| JP7118948B2 (ja) | 2017-03-13 | 2022-08-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN108573983B (zh) * | 2017-03-13 | 2021-08-17 | 京东方科技集团股份有限公司 | 光学探测器及其制备方法、指纹识别传感器、显示装置 |
| JP6942602B2 (ja) * | 2017-10-19 | 2021-09-29 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
| WO2019084751A1 (zh) * | 2017-10-31 | 2019-05-09 | 华为技术有限公司 | 显示组件及其制造方法、显示器以及终端设备 |
| CN110890428B (zh) | 2018-09-07 | 2023-03-24 | 联华电子股份有限公司 | 氧化物半导体场效晶体管及其形成方法 |
| CN109343735B (zh) * | 2018-09-18 | 2022-08-09 | 京东方科技集团股份有限公司 | 一种触控显示基板及其制备方法、触控显示装置 |
| CN109785810B (zh) * | 2019-01-02 | 2021-07-23 | 惠科股份有限公司 | 扫描驱动电路、显示装置及扫描驱动方法 |
| CN109683371A (zh) * | 2019-01-29 | 2019-04-26 | 深圳市华星光电半导体显示技术有限公司 | 显示面板 |
| US11532697B2 (en) * | 2019-10-16 | 2022-12-20 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method for forming the same |
| CN113451414B (zh) * | 2020-06-18 | 2022-07-29 | 重庆康佳光电技术研究院有限公司 | 一种薄膜晶体管器件及其制备方法 |
| KR102675926B1 (ko) * | 2020-06-30 | 2024-06-17 | 엘지디스플레이 주식회사 | 표시장치 |
| CN114077083B (zh) * | 2020-08-14 | 2025-03-18 | 京东方科技集团股份有限公司 | 透明显示装置及制备方法 |
| JP2024112415A (ja) * | 2023-02-08 | 2024-08-21 | 株式会社ジャパンディスプレイ | 表示装置 |
| AT527886A1 (de) * | 2024-01-12 | 2025-07-15 | Alimusaj Fidan | Mobiltelefon |
Family Cites Families (181)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
| JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0782171B2 (ja) * | 1989-02-20 | 1995-09-06 | シャープ株式会社 | 液晶表示装置 |
| JP2721214B2 (ja) * | 1988-12-26 | 1998-03-04 | シャープ株式会社 | 液晶表示装置 |
| EP0445535B1 (en) | 1990-02-06 | 1995-02-01 | Sel Semiconductor Energy Laboratory Co., Ltd. | Method of forming an oxide film |
| JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
| JP2587754B2 (ja) | 1992-06-29 | 1997-03-05 | セイコーエプソン株式会社 | マトリックスアレー基板 |
| TW226478B (en) | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
| US6323071B1 (en) | 1992-12-04 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor device |
| US5403762A (en) | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
| US6413805B1 (en) | 1993-03-12 | 2002-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
| US6875628B1 (en) | 1993-05-26 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method of the same |
| JPH07104312A (ja) | 1993-09-30 | 1995-04-21 | Sanyo Electric Co Ltd | 液晶表示装置の製造方法 |
| JPH0895062A (ja) | 1994-09-27 | 1996-04-12 | Casio Comput Co Ltd | 液晶表示素子 |
| JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
| WO1997006554A2 (en) | 1995-08-03 | 1997-02-20 | Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
| US5847410A (en) | 1995-11-24 | 1998-12-08 | Semiconductor Energy Laboratory Co. | Semiconductor electro-optical device |
| JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| US6140198A (en) | 1998-11-06 | 2000-10-31 | United Microelectronics Corp. | Method of fabricating load resistor |
| JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| JP3683463B2 (ja) * | 1999-03-11 | 2005-08-17 | シャープ株式会社 | アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ |
| TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
| JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
| JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
| JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
| US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
| JP4104885B2 (ja) * | 2002-03-18 | 2008-06-18 | シャープ株式会社 | 液晶表示装置及びその製造方法 |
| JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| US7189992B2 (en) | 2002-05-21 | 2007-03-13 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures having a transparent channel |
| JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
| US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| JP4483235B2 (ja) | 2003-09-01 | 2010-06-16 | カシオ計算機株式会社 | トランジスタアレイ基板の製造方法及びトランジスタアレイ基板 |
| US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| KR20070116888A (ko) | 2004-03-12 | 2007-12-11 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 아몰퍼스 산화물 및 박막 트랜지스터 |
| US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| EP2453481B1 (en) | 2004-11-10 | 2017-01-11 | Canon Kabushiki Kaisha | Field effect transistor with amorphous oxide |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| BRPI0517560B8 (pt) | 2004-11-10 | 2018-12-11 | Canon Kk | transistor de efeito de campo |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| CA2585063C (en) | 2004-11-10 | 2013-01-15 | Canon Kabushiki Kaisha | Light-emitting device |
| US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| JP2006171723A (ja) * | 2004-12-13 | 2006-06-29 | Samsung Electronics Co Ltd | アレイ基板、その製造方法、及びこれを有する液晶表示装置 |
| US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI505473B (zh) | 2005-01-28 | 2015-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
| US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
| US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| GB2425401A (en) | 2005-04-21 | 2006-10-25 | Stuart Philip Speakman | Manufacture of microstructures using peelable mask |
| JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
| JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
| JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
| JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
| JP4560502B2 (ja) | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
| JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
| JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
| EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| JP2007115808A (ja) | 2005-10-19 | 2007-05-10 | Toppan Printing Co Ltd | トランジスタ |
| JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| KR20090115222A (ko) | 2005-11-15 | 2009-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| US7998372B2 (en) | 2005-11-18 | 2011-08-16 | Idemitsu Kosan Co., Ltd. | Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel |
| US20070115219A1 (en) | 2005-11-22 | 2007-05-24 | Matsushita Electric Industrial Co., Ltd. | Apparatus for driving plasma display panel and plasma display |
| US20090237000A1 (en) | 2005-11-22 | 2009-09-24 | Matsushita Electric Industrial Co., Ltd. | Pdp driving apparatus and plasma display |
| JP5099740B2 (ja) | 2005-12-19 | 2012-12-19 | 財団法人高知県産業振興センター | 薄膜トランジスタ |
| TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
| US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| JP5015471B2 (ja) | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタ及びその製法 |
| US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| JP5110803B2 (ja) | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
| EP1843194A1 (en) | 2006-04-06 | 2007-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
| JP4215068B2 (ja) * | 2006-04-26 | 2009-01-28 | エプソンイメージングデバイス株式会社 | 電気光学装置および電子機器 |
| US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| WO2007138937A1 (en) * | 2006-05-26 | 2007-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4404881B2 (ja) | 2006-08-09 | 2010-01-27 | 日本電気株式会社 | 薄膜トランジスタアレイ、その製造方法及び液晶表示装置 |
| JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| JP5127183B2 (ja) | 2006-08-23 | 2013-01-23 | キヤノン株式会社 | アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法 |
| JP5128792B2 (ja) | 2006-08-31 | 2013-01-23 | 財団法人高知県産業振興センター | 薄膜トランジスタの製法 |
| JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
| JP5105842B2 (ja) | 2006-12-05 | 2012-12-26 | キヤノン株式会社 | 酸化物半導体を用いた表示装置及びその製造方法 |
| US8013817B2 (en) * | 2006-12-27 | 2011-09-06 | Global Oled Technology Llc | Electronic display having improved uniformity |
| KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
| KR20080068240A (ko) | 2007-01-18 | 2008-07-23 | 삼성전자주식회사 | 박막 트랜지스터 기판의 제조 방법 |
| US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| US8816484B2 (en) | 2007-02-09 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8436349B2 (en) | 2007-02-20 | 2013-05-07 | Canon Kabushiki Kaisha | Thin-film transistor fabrication process and display device |
| JP5196870B2 (ja) | 2007-05-23 | 2013-05-15 | キヤノン株式会社 | 酸化物半導体を用いた電子素子及びその製造方法 |
| KR100858088B1 (ko) | 2007-02-28 | 2008-09-10 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| JP5121254B2 (ja) | 2007-02-28 | 2013-01-16 | キヤノン株式会社 | 薄膜トランジスタおよび表示装置 |
| KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
| KR101422747B1 (ko) * | 2007-03-21 | 2014-07-25 | 엘지디스플레이 주식회사 | 수직정렬모드 액정표시장치 |
| JP5466939B2 (ja) | 2007-03-23 | 2014-04-09 | 出光興産株式会社 | 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法 |
| US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
| KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
| KR100873081B1 (ko) | 2007-05-29 | 2008-12-09 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
| KR101333594B1 (ko) * | 2007-08-30 | 2013-11-26 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| JP2009099887A (ja) | 2007-10-19 | 2009-05-07 | Hitachi Displays Ltd | 表示装置 |
| KR101375831B1 (ko) | 2007-12-03 | 2014-04-02 | 삼성전자주식회사 | 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치 |
| JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
| JP5264197B2 (ja) | 2008-01-23 | 2013-08-14 | キヤノン株式会社 | 薄膜トランジスタ |
| KR20090105561A (ko) * | 2008-04-03 | 2009-10-07 | 삼성모바일디스플레이주식회사 | 반도체 장치 및 그를 구비하는 평판 표시 장치 |
| TWI770659B (zh) | 2008-07-31 | 2022-07-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
| JP5491833B2 (ja) | 2008-12-05 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| BRPI0922157A2 (pt) * | 2008-12-10 | 2015-12-29 | Sharp Kk | substrato de matriz ativa, método de fabricação de substrato de matriz ativa, painel de cristal líquido, método de fabricação de painel de cristal líquido, dispositivo de exibição de cristal líquido, unidade de exibição de cristal líquido, e receptor de televisão |
| EP2515337B1 (en) | 2008-12-24 | 2016-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| JP2010177223A (ja) * | 2009-01-27 | 2010-08-12 | Videocon Global Ltd | 液晶表示装置及びその製造方法 |
| JP2010191107A (ja) * | 2009-02-17 | 2010-09-02 | Videocon Global Ltd | 液晶表示装置及びその製造方法 |
| US8461582B2 (en) * | 2009-03-05 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2010230744A (ja) * | 2009-03-26 | 2010-10-14 | Videocon Global Ltd | 液晶表示装置及びその製造方法 |
| TWI650848B (zh) * | 2009-08-07 | 2019-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| US8115883B2 (en) * | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| KR101460869B1 (ko) * | 2009-09-04 | 2014-11-11 | 가부시끼가이샤 도시바 | 박막 트랜지스터 및 그 제조 방법 |
| JP5404281B2 (ja) * | 2009-09-28 | 2014-01-29 | 株式会社ジャパンディスプレイ | 液晶表示パネル |
| WO2011046003A1 (en) * | 2009-10-14 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5743407B2 (ja) | 2010-01-15 | 2015-07-01 | キヤノン株式会社 | トランジスタの駆動方法及び該方法で駆動されるトランジスタを含む表示装置 |
| KR101758834B1 (ko) * | 2010-03-19 | 2017-07-18 | 엘지디스플레이 주식회사 | 횡전계형 액정표시장치용 어레이 기판 및 이의 제조 방법 |
| CN102906804B (zh) * | 2010-05-24 | 2014-03-12 | 夏普株式会社 | 薄膜晶体管基板及其制造方法 |
| KR101845480B1 (ko) * | 2010-06-25 | 2018-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| JP5806043B2 (ja) * | 2010-08-27 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8647919B2 (en) * | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
| KR20130106398A (ko) * | 2010-09-15 | 2013-09-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 그 제작 방법 |
| TWI432865B (zh) * | 2010-12-01 | 2014-04-01 | 友達光電股份有限公司 | 畫素結構及其製作方法 |
| KR20200052993A (ko) * | 2010-12-03 | 2020-05-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| WO2012086513A1 (ja) * | 2010-12-20 | 2012-06-28 | シャープ株式会社 | 半導体装置および表示装置 |
| JP5284545B2 (ja) * | 2010-12-27 | 2013-09-11 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US8686416B2 (en) * | 2011-03-25 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
| US8785928B2 (en) * | 2012-05-31 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| SG11201505225TA (en) * | 2012-08-03 | 2015-08-28 | Semiconductor Energy Lab | Oxide semiconductor stacked film and semiconductor device |
| KR102679509B1 (ko) * | 2012-09-13 | 2024-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI611566B (zh) * | 2013-02-25 | 2018-01-11 | Semiconductor Energy Laboratory Co., Ltd. | 顯示裝置和電子裝置 |
-
2014
- 2014-01-23 US US14/161,975 patent/US8981374B2/en not_active Expired - Fee Related
- 2014-01-24 JP JP2014011039A patent/JP6368094B2/ja not_active Expired - Fee Related
- 2014-01-24 KR KR1020140008825A patent/KR102208267B1/ko not_active Expired - Fee Related
-
2015
- 2015-03-12 US US14/656,285 patent/US9177969B2/en not_active Expired - Fee Related
- 2015-10-29 US US14/926,795 patent/US9331108B2/en active Active
-
2016
- 2016-04-28 US US15/140,837 patent/US9659977B2/en active Active
-
2017
- 2017-05-22 US US15/601,330 patent/US9917116B2/en not_active Expired - Fee Related
-
2018
- 2018-07-06 JP JP2018129078A patent/JP6619059B2/ja active Active
-
2019
- 2019-08-27 KR KR1020190104830A patent/KR102112956B1/ko active Active
- 2019-11-13 JP JP2019205512A patent/JP6835937B2/ja active Active
-
2021
- 2021-01-21 KR KR1020210008614A patent/KR102255010B1/ko not_active Expired - Fee Related
- 2021-02-04 JP JP2021016770A patent/JP7123204B2/ja active Active
- 2021-05-17 KR KR1020210063235A patent/KR102295381B1/ko active Active
- 2021-08-24 KR KR1020210111515A patent/KR102337572B1/ko active Active
- 2021-12-06 KR KR1020210172760A patent/KR102415139B1/ko active Active
-
2022
- 2022-06-27 KR KR1020220078164A patent/KR102505712B1/ko active Active
- 2022-08-09 JP JP2022126930A patent/JP7400038B2/ja active Active
-
2023
- 2023-02-27 KR KR1020230025832A patent/KR102547121B1/ko active Active
- 2023-06-20 KR KR1020230078762A patent/KR102609175B1/ko active Active
- 2023-11-29 KR KR1020230168859A patent/KR102724502B1/ko active Active
- 2023-12-06 JP JP2023205830A patent/JP7607734B2/ja active Active
-
2024
- 2024-10-28 KR KR1020240148556A patent/KR102811386B1/ko active Active
- 2024-12-17 JP JP2024220594A patent/JP7817355B2/ja active Active
-
2025
- 2025-05-19 KR KR1020250064456A patent/KR20250078834A/ko active Pending
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7400038B2 (ja) | 表示装置 | |
| JP6371061B2 (ja) | 半導体装置の作製方法 | |
| JP6542961B2 (ja) | 半導体装置の作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161123 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161123 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170816 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170822 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171020 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180227 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180612 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180706 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6368094 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |