JP6331633B2 - ワイヤボンディング装置およびワイヤボンディング方法 - Google Patents
ワイヤボンディング装置およびワイヤボンディング方法 Download PDFInfo
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- JP6331633B2 JP6331633B2 JP2014085666A JP2014085666A JP6331633B2 JP 6331633 B2 JP6331633 B2 JP 6331633B2 JP 2014085666 A JP2014085666 A JP 2014085666A JP 2014085666 A JP2014085666 A JP 2014085666A JP 6331633 B2 JP6331633 B2 JP 6331633B2
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- wire
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- 238000000034 method Methods 0.000 title claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 56
- 229910000838 Al alloy Inorganic materials 0.000 claims description 7
- 238000009210 therapy by ultrasound Methods 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 18
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005304 joining Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Mechanical Engineering (AREA)
Description
この構成によれば、ワイヤボンディング時のワイヤ温度が、50℃以上75℃以下に加熱されているため、ワイヤと電極の接合面積を増加でき、直径500μm以上600μm以下のワイヤを半導体素子上の電極へワイヤボンディングできる。ワイヤ温度が50℃未満では、接合面積が不足するという問題がある。75℃を超えると、加熱処理によるワイヤボンディングの接合強度のばらつきが生じやすく、さらに、ワイヤボンディングに要する加熱エネルギーが多くなるため、不経済であるという問題がある。ワイヤ温度が100℃を超えると、ワイヤと電極との未接合面積が増加するという問題がある。
図1は、本発明の実施例に係るワイヤボンディング装置の概略構成図である。図1では、ワイヤボンディング装置100が、絶縁基板1と、絶縁基板1のおもて面に形成された第一電極2と、絶縁基板1の裏面に形成された裏面金属板3と、第一電極2上にはんだ4を介して接続された半導体素子5と、半導体素子5の上面に形成された第二電極7とを備えた構造体を被処理物とした事例を図示した。
図1のワイヤボンディング装置100は、直径500μm以上600μm以下のワイヤ6を供給するワイヤ供給装置10と、ワイヤ6を50℃以上100℃以下に加熱する加熱装置11と、電極2,7にワイヤ6を加圧する加圧装置12と、加圧装置12で加圧されたワイヤ6に超音波振動を加える超音波発生装置13とを備える。
ワイヤ供給装置10は、内部にリールに巻かれたワイヤ6を備えている。ワイヤ6は、図示しないローラーに挟まれ、このローラーが回転機で回転されることで、ワイヤ6がワイヤヒータ11bへ供給される。
図2は、本発明の実施例に係るワイヤボンディング装置の加熱装置の温度調節に関する関連図である。図2に示すように、ワイヤボンディング装置100は、さらに、ワイヤ6の温度を計測する温度センサ11cと、温度センサ11cの計測値と設定温度とを比較して加熱装置11の出力を制御する制御装置11dとを備えている。図1および図2に図示されていないが、ワイヤボンディング装置100は、設定温度が入力される入力装置を備えている。
図4は、加熱工程における加熱温度とワイヤと電極との接合面積の関係を示した図である。加熱温度の上昇と共に接合面積も増加していることが判る。
上記の結果を考慮すると、加熱工程S1におけるワイヤ温度は、50℃未満だと接合面積が十分でない場合があり、ワイヤボンディングの接合強度が不十分になるという問題がある。また、このワイヤ温度が、100℃を超えると、ワイヤ接合部の内部の未接合面積が増加するという問題がある。
2 第一電極
3 裏面金属板
4 はんだ
5 半導体素子
6 ワイヤ
7 第二電極
10 ワイヤ供給装置
11 加熱装置
11a 平板ヒータ
11b ワイヤヒータ
11c 温度センサ
11d 制御装置
12 加圧装置
12a ホーン
12b ボンディングチップ
13 超音波発生装置
100 ワイヤボンディング装置
S1 加熱工程
S2 加圧工程
S3 超音波処理工程
Claims (3)
- ワイヤボンディングによって電極とアルミニウム合金製のワイヤとを電気的に接続するワイヤボンディング装置において、
直径500μm以上600μm以下の前記ワイヤを供給するワイヤ供給装置と、
前記ワイヤを50℃以上75℃以下に加熱する加熱装置と、
前記電極に前記ワイヤを加圧する加圧装置と、
前記加圧装置で加圧された前記ワイヤに超音波振動を加える超音波発生装置と、
を備えることを特徴とするワイヤボンディング装置。 - 請求項1に記載のワイヤボンディング装置において、
前記加熱装置は、前記ワイヤを通す貫通孔の内壁に設けられたヒータで前記ワイヤを加熱するワイヤヒータ、および、前記電極を介して前記ワイヤを加熱する平板ヒータであり、
前記ワイヤの温度を計測する温度センサと、
前記温度センサの計測値と設定温度とを比較して前記加熱装置の出力を制御する制御装置とを備え、
前記加圧装置は、前記超音波発生装置の超音波振動を伝達するホーンと、前記ホーンの端部に着脱可能に固定されたボンディングチップとを備え、かつ前記ホーンと接する部材をばねで付勢でき、ばねの長さを調節することで前記ボンディングチップが前記ワイヤを押さえる荷重を調節する機構を備える
ことを特徴とするワイヤボンディング装置。 - 加熱処理、加圧処理および超音波処理を伴ったワイヤボンディングによって電極とアルミニウム合金製のワイヤとを電気的に接続するワイヤボンディング方法において、
前記ワイヤの温度を50℃以上75℃以下にする加熱工程と、
前記電極上に直径500μm以上600μm以下の前記ワイヤを載せ加圧する加圧工程と、
50℃以上75℃以下になった前記ワイヤを前記加圧工程中に、前記ワイヤへ超音波振動を加える超音波処理工程と、
を備えることを特徴とするワイヤボンディング方法。
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US14/642,667 US10896892B2 (en) | 2014-04-17 | 2015-03-09 | Wire bonding apparatus |
CN201510101427.5A CN105047572B (zh) | 2014-04-17 | 2015-03-09 | 引线接合装置以及引线接合方法 |
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DE102016210590A1 (de) * | 2016-06-15 | 2017-12-21 | Telsonic Holding Ag | Ultraschallschweissvorrichtung mit Spanneinrichtung und Verfahren zum Ultraschallschweissen |
CN107620028B (zh) * | 2017-08-22 | 2019-06-11 | 广东工业大学 | 一种用于电弧喷涂机的送丝器 |
EP3570318A1 (en) * | 2018-05-15 | 2019-11-20 | Infineon Technologies AG | Method for bonding an electrically conductive element to a bonding partner |
DE102019120189A1 (de) * | 2019-07-25 | 2021-01-28 | Mühlbauer Gmbh & Co. Kg | Verfahren und vorrichtung zum thermo-kompressions-drahtbonden mittels einer thermode |
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