JP6325104B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP6325104B2 JP6325104B2 JP2016535394A JP2016535394A JP6325104B2 JP 6325104 B2 JP6325104 B2 JP 6325104B2 JP 2016535394 A JP2016535394 A JP 2016535394A JP 2016535394 A JP2016535394 A JP 2016535394A JP 6325104 B2 JP6325104 B2 JP 6325104B2
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- 239000000758 substrate Substances 0.000 title claims description 89
- 238000012545 processing Methods 0.000 title claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 219
- 238000000034 method Methods 0.000 claims description 49
- 238000003672 processing method Methods 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 4
- 238000004364 calculation method Methods 0.000 claims description 3
- 238000004088 simulation Methods 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 20
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 6
- 230000006698 induction Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
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Description
入力変数として操作変数Ptotのみを受け取り、出力変数としてゾーン加熱装置1,2,3,4,5の各々に対してゾーン加熱パワーP1,P2,P3,P4,P5を与える加熱パワー分配器12を特徴とする装置であって、ゾーン加熱パワーP1,P2,P3,P4,P5の値の総和が操作変数Ptotに対応し、ゾーン加熱パワーP1,P2,P3,P4,P5の値がお互いに対して決定された比を持ち、特定の比を予め選択可能な分散パラメータA,B,C,Dによって変更することができる装置。
2…ゾーン加熱装置
3…ゾーン加熱装置
4…ゾーン加熱装置
5…ゾーン加熱装置
6…プロセスチャンバー
7…サセプタ
7’ …上面側
7'' …底面側
8…基板ホルダー
9…くぼみ
10…温度測定装置
11…コントローラ
12…加熱パワー分配器
13…プロセチャンバー天井
14…ガス注入部材
15…基板
16…基板ホルダーの中心
A…分配パラメータ
B…分配パラメータ
C…分配パラメータ
D…分配パラメータ
P1…ゾーン加熱パワー
P2…ゾーン加熱パワー
P3…ゾーン加熱パワー
P4…ゾーン加熱パワー
P5…ゾーン加熱パワー
Ptot…全体の加熱パワー
Ts…基板温度
Z…中心
Claims (10)
- プロセスチャンバー(6)の中に配置され、少なくとも1個の基板(15)を収容するために当該プロセスチャンバー(6)の方向を向く第1の面(7’)および当該第1の面(7’)と反対側を向く第2の面(7'')を持っており、複数のゾーン加熱装置を持つ加熱装置によって加熱されることができるサセプタを有し、
制御装置を有し、当該制御装置の参照変数がサセプタ温度(Ts)であり、当該制御装置の制御変数が温度測定装置(10)によって測定された前記サセプタ(7)の実際の温度であり、当該制御装置の操作変数が前記加熱装置に供給される全体の加熱パワー(Ptot)に対する値であり、
入力変数として前記操作変数(Ptot)のみを受け取り、出力変数として前記ゾーン加熱装置(1,2,3,4,5)の各々に対してゾーン加熱パワー(P1,P2,P3,P4,P5)を与える加熱パワー分配器(12)を有し、
前記ゾーン加熱パワー(P1,P2,P3,P4,P5)の値の総和が前記操作変数(Ptot)に対応し、前記ゾーン加熱パワー(P1,P2,P3,P4,P5)の値がお互いに対して決定された比を持ち、
特定の比を予め選択可能な分散パラメータ(A,B,C,D)によって変更することができ、
前記サセプタ(7)が円形ディスクの形状であり、複数の基板ホルダー(8)が前記サセプタ(7)の中心の周りに環状に配置されており、
前記ゾーン加熱装置(1,2,3,4,5)が前記サセプタ(7)の中心の周りに環状に配置されており、中央ゾーン加熱装置(1)が前記基板ホルダー(8)の中心の下に配置されており、半径方向に内側のゾーン加熱装置(3)が前記基板ホルダー(8)の環状配置の内側の端の下の領域に配置されており、半径方向に外側のゾーン加熱装置(2)が前記基板ホルダー(8)の環状配置の外側の端の下の領域に配置されており、
少なくとも1つの分配パラメータ(A)が、前記半径方向に外側のゾーン加熱装置(2)に供給され、前記半径方向に内側のゾーン加熱装置(3)に供給される前記ゾーン加熱パワー(P2,P 3 )の商であり、
更なる分配パラメータ(B)が、前記全体の加熱パワーに対する前記中央ゾーン加熱装置(1)に供給されるゾーン加熱パワー(P1)の比を規定する、
ことを特徴とする基板処理装置。
- 少なくとも1つの更なるゾーン加熱装置(4,5)のペアを特徴とする基板処理装置であって、結び付いた前記ゾーン加熱装置(4,5)に供給されるゾーン加熱パワー(P4,P5)がお互いに対して決定された比(C)を持つ請求項1に記載の基板処理装置。
- ゾーン加熱パワー(P4,P5)が、お互いに対して決定された比(C)を持ち、更なるゾーン加熱装置のペア(4,5)に供給されることを特徴とする請求項1または2に記載の基板処理装置。
- 前記ゾーン加熱装置(1,2,3,4,5)が高周波交流場を出力するための高周波コイルであり、当該高周波交流場がサセプタ(7)の中に渦電流を誘導することを特徴とする請求項1ないし3のいずれか1項に記載の基板処理装置。
- 少なくとも1個の基板(15)がプロセスチャンバー(6)の中に配置されているサセプタ(7)の第1の面(7’)の上に配置され、当該第1の面(7’)と反対側を向く第2の面(7'')が前記サセプタ(7)の中心の周りに環状に配置された少なくとも3個のゾーン加熱装置(1,2,3,4,5)を持つ加熱装置によって加熱され、
前記加熱装置に供給される全体の加熱パワー(Ptot)が制御装置(11)によって制御され、当該制御装置の参照変数がサセプタ温度(Ts)であり、当該制御装置の制御変数が温度測定装置(10)によって測定された前記サセプタ(7)の実際の温度であり、当該制御装置の操作変数が前記全体の加熱パワー(Ptot)に対する値のみであり、
加熱パワー分配器(12)が前記ゾーン加熱装置(1,2,3,4,5)の各々にゾーン加熱パワー(P1,P2,P3,P4,P5)を供給し、当該ゾーン加熱パワー(P1,P2,P3,P4,P5)の総和が前記全体の加熱パワー(Ptot)であり、
個別の前記ゾーン加熱パワー(P1,P2,P3,P4,P5)の間で前記全体の加熱パワー(Ptot)の分配が、予め選択可能な分配パラメータ(A,B,C,D)に従って実行され、
前記サセプタ(7)の第1の面(7’)の上で、複数の基板ホルダー(8)が前記サセプタ(7)の中心の周りに輪のゾーンで配置されており、
中央ゾーン加熱装置(1)が前記基板ホルダー(8)の中心の下に配置されており、半径方向に内側のゾーン加熱装置(3)が前記基板ホルダー(8)の環状配置の内側の端の下の領域に配置されており、半径方向に外側のゾーン加熱装置(2)が前記基板ホルダー(8)の環状配置の外側の端の下の領域に配置されており、
少なくとも1つの分配パラメータ(A)が、前記半径方向に外側のゾーン加熱装置(2)に供給され、前記半径方向に内側のゾーン加熱装置(3)に供給される前記ゾーン加熱パワー(P2,P 3 )の商であり、
更なる分配パラメータ(B)が、前記全体の加熱パワーに対する前記中央ゾーン加熱装置(1)に供給されるゾーン加熱パワー(P1)の比を規定する、
ことを特徴とする基板処理方法。
- 少なくとも1つの更なるゾーン加熱装置(4,5)のペアを特徴とする基板処理方法であって、結び付いた前記ゾーン加熱装置(4,5)に供給されるゾーン加熱パワー(P4,P5)がお互いに対して決定された比(C)を持つ請求項5に記載の基板処理方法。
- 前記分配パラメータ(A,B,C,D)が、プロセスチャンバー内の全体のガス圧力のセットに適応させられることを特徴とする請求項5または6に記載の基板処理方法。
- 前記分配パラメータ(A,B,C,D)が、最大のプロセス温度に適応させられることを特徴とする請求項5ないし7のいずれか1項に記載の基板処理方法。
- 温度傾斜が、決定された値に保たれる分配パラメータ(A,B,C,D)で与えられることを特徴とする請求項5ないし8のいずれか1項に記載の基板処理方法。
- 分配パラメータ(A,B,C,D)が、シミュレーション計算および/または予備テストでの測定を通して決定されることを特徴とするる請求項5ないし9のいずれか1項に記載の基板処理方法。
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DE102015100640A1 (de) | 2015-01-19 | 2016-07-21 | Aixtron Se | Vorrichtung und Verfahren zum thermischen Behandeln von Substraten |
JP6512089B2 (ja) * | 2015-12-15 | 2019-05-15 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理装置の調整方法 |
DE102016119328A1 (de) | 2016-10-11 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Heizvorrichtung, Verfahren und System zur Herstellung von Halbleiterchips im Waferverbund |
KR102369676B1 (ko) | 2017-04-10 | 2022-03-04 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
EP3419049A1 (de) * | 2017-06-22 | 2018-12-26 | Meyer Burger (Germany) GmbH | Beheizbarer waferträger und bearbeitungsverfahren |
TWI720330B (zh) * | 2017-08-10 | 2021-03-01 | 美商瓦特洛威電子製造公司 | 控制送至加熱器之電力的系統及方法 |
DE102019104433A1 (de) | 2019-02-21 | 2020-08-27 | Aixtron Se | CVD-Reaktor mit Mitteln zur lokalen Beeinflussung der Suszeptortemperatur |
TWI711717B (zh) * | 2019-11-06 | 2020-12-01 | 錼創顯示科技股份有限公司 | 加熱裝置及化學氣相沉積系統 |
DE102020107517A1 (de) | 2020-03-18 | 2021-09-23 | Aixtron Se | Suszeptor für einen CVD-Reaktor |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4836138A (en) * | 1987-06-18 | 1989-06-06 | Epsilon Technology, Inc. | Heating system for reaction chamber of chemical vapor deposition equipment |
US5970214A (en) * | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
US6034357A (en) * | 1998-06-08 | 2000-03-07 | Steag Rtp Systems Inc | Apparatus and process for measuring the temperature of semiconductor wafers in the presence of radiation absorbing gases |
US6225601B1 (en) * | 1998-07-13 | 2001-05-01 | Applied Komatsu Technology, Inc. | Heating a substrate support in a substrate handling chamber |
IT1303090B1 (it) | 1998-07-28 | 2000-10-30 | Miller Europe Spa | Dispositivo accendigas elettronico integrato con una morsettiera. |
JP2001210596A (ja) * | 2000-01-28 | 2001-08-03 | Hitachi Kokusai Electric Inc | 半導体製造装置の温度制御方法、半導体製造装置、および半導体デバイスの製造方法 |
US6492625B1 (en) * | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
JP3834216B2 (ja) | 2000-09-29 | 2006-10-18 | 株式会社日立国際電気 | 温度制御方法 |
JP4288110B2 (ja) * | 2003-06-17 | 2009-07-01 | 三井造船株式会社 | 半導体製造装置 |
JP2005243243A (ja) * | 2004-02-24 | 2005-09-08 | Ngk Insulators Ltd | 加熱方法 |
WO2005124859A2 (en) * | 2004-06-10 | 2005-12-29 | Avansys, Inc. | Methods and apparatuses for depositing uniform layers |
US20060027169A1 (en) * | 2004-08-06 | 2006-02-09 | Tokyo Electron Limited | Method and system for substrate temperature profile control |
JP4428175B2 (ja) * | 2004-09-14 | 2010-03-10 | 株式会社Sumco | 気相エピタキシャル成長装置および半導体ウェーハの製造方法 |
JP2006113724A (ja) | 2004-10-13 | 2006-04-27 | Omron Corp | 制御方法、温度制御方法、温度調節器、熱処理装置、プログラムおよび記録媒体 |
US7195934B2 (en) * | 2005-07-11 | 2007-03-27 | Applied Materials, Inc. | Method and system for deposition tuning in an epitaxial film growth apparatus |
US20070125762A1 (en) * | 2005-12-01 | 2007-06-07 | Applied Materials, Inc. | Multi-zone resistive heater |
JP2007335500A (ja) * | 2006-06-13 | 2007-12-27 | Hitachi Kokusai Electric Inc | 基板処理装置の温度制御方法 |
DE102007027704A1 (de) | 2007-06-15 | 2008-12-18 | Aixtron Ag | Vorrichtung zum Beschichten von auf einem Suszeptor angeordneten Substraten |
JP2009054871A (ja) * | 2007-08-28 | 2009-03-12 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP5358956B2 (ja) * | 2008-01-19 | 2013-12-04 | 東京エレクトロン株式会社 | 載置台装置、処理装置、温度制御方法及び記憶媒体 |
JP2011003677A (ja) * | 2009-06-18 | 2011-01-06 | Hitachi Cable Ltd | トランジスタ用エピタキシャルウェハの製造方法 |
US20110185969A1 (en) | 2009-08-21 | 2011-08-04 | Varian Semiconductor Equipment Associates, Inc. | Dual heating for precise wafer temperature control |
DE102009043960A1 (de) * | 2009-09-08 | 2011-03-10 | Aixtron Ag | CVD-Reaktor |
US20110073039A1 (en) * | 2009-09-28 | 2011-03-31 | Ron Colvin | Semiconductor deposition system and method |
US9165808B2 (en) * | 2009-10-28 | 2015-10-20 | Ligadp Co., Ltd. | Metal organic chemical vapor deposition device and temperature control method therefor |
KR101062460B1 (ko) | 2009-12-16 | 2011-09-05 | 엘아이지에이디피 주식회사 | 화학기상증착장치의 온도제어방법 |
JP5026549B2 (ja) * | 2010-04-08 | 2012-09-12 | シャープ株式会社 | 加熱制御システム、それを備えた成膜装置、および温度制御方法 |
US20110259879A1 (en) | 2010-04-22 | 2011-10-27 | Applied Materials, Inc. | Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers |
US8698054B2 (en) | 2010-09-16 | 2014-04-15 | Bernard Lasko | Integral inductor-susceptor |
US20120148760A1 (en) | 2010-12-08 | 2012-06-14 | Glen Eric Egami | Induction Heating for Substrate Processing |
US8465590B2 (en) | 2011-02-01 | 2013-06-18 | Intermolecular, Inc. | Emissivity profile control for thermal uniformity |
US8552346B2 (en) * | 2011-05-20 | 2013-10-08 | Applied Materials, Inc. | Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber |
JP2013038169A (ja) * | 2011-08-05 | 2013-02-21 | Ulvac Japan Ltd | 薄膜製造方法および薄膜製造装置 |
JP5973731B2 (ja) * | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びヒータの温度制御方法 |
DE102012101717A1 (de) * | 2012-03-01 | 2013-09-05 | Aixtron Se | Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung |
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