TWI676704B - 基板處理裝置及方法 - Google Patents

基板處理裝置及方法 Download PDF

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TWI676704B
TWI676704B TW103124426A TW103124426A TWI676704B TW I676704 B TWI676704 B TW I676704B TW 103124426 A TW103124426 A TW 103124426A TW 103124426 A TW103124426 A TW 103124426A TW I676704 B TWI676704 B TW I676704B
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heating
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zone heating
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丹尼爾 布萊恩
Daniel Brien
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艾思強公司
Aixtron Se
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Abstract

本發明係有關一種用於處理基板之裝置與方法，包括一具有數個分區加熱裝置之加熱裝置及一調節裝置，其指令變數為基座溫度(TS)，其控制變數為利用測溫裝置(10)測得之該基座(7)的實際溫度，且其操縱變數為饋入該加熱裝置之總加熱功率(Ptot)的值。設有加熱功率分配器(12)，該加熱功率分配器接收該操縱變數(Ptot)作為輸入變數且為每個分區加熱裝置(1,2,3,4,5)皆提供一分區加熱功率(P1,P2,P3,P4,P5)作為輸出變數，其中該等分區加熱功率(P1,P2,P3,P4,P5)之值的總和等於該操縱變數(Ptot)，並且該等分區加熱功率(P1,P2,P3,P4,P5)之值相互成預設的固定比例。為了提供一種穩定的調節迴路且該調節迴路能根據變化著的處理參數來相應調整具有數個分區加熱裝置之裝置，提出如下方案：該等預設比例由可預選的分配參數(A,B,C,D)定義，其中至少一分配參數(A,C)為兩分區加熱功率(P1,P2；P4,P5)值之商。

Description

基板處理裝置及方法
本發明係有關一種用於處理基板之裝置，包括：設於處理室之基座，其具有指向該處理室以容置至少一基板之第一面及背向於該第一面之第二面，該第二面可被一具有數個分區加熱裝置之加熱裝置加熱；及調節裝置，其指令變數為基座溫度，其控制變數為利用測溫裝置測得之基座實際溫度，且其操縱變數為饋入該加熱裝置之總加熱功率Ptot的值。
本發明另亦有關一種處理基板之方法，其中：至少一基板放置在設於處理室之基座的第一面上；用一具有數個分區加熱裝置的加熱裝置加熱背向於該第一面之第二面，其中被饋入該加熱裝置之加熱功率由調節裝置調節，其指令變數為基座溫度，其控制變數為利用溫度裝置測得之基座實際溫度，且其操縱變數為該加熱功率的值。
US 2011/0143016 A1描述一種裝置，其包括兩同心設於基座輪廓軸周圍的分區加熱裝置，該等分區加熱裝置由調節器提供加熱功率。該基座受驅繞其中心軸旋轉。
US 2011/0259879 A1描述一種用於處理基板之裝置，其基座下方設有數個可予以個別加熱之分區加熱裝置。
US 6,746,908 B2描述一種溫度控制裝置，其中對數個局部並排設置且相互施加熱影響之加熱區進行個別調節。溫度感測器數目大於加熱區數目。EP 1 647 868 B1係用獨用加熱元件加熱數個相互影響之 加熱區。每個加熱區皆被分配一測溫感測器。各加熱裝置相互干擾。藉由形成解耦矩陣來補償干擾因數。
WO 2011/022637 A1描述可用燈管、電阻加熱裝置或感應加熱元件加熱基座之加熱裝置。應當主要藉測高溫術量測基座表面溫度。
利用射頻線圈來加熱基座的裝置主要披露於US 2012/0148760 A1、US 2012/0193765 A1及US 2012/0067870 A1。
DE 10 2007 027 704 A1描述一種前述類型之裝置，其基座之數個區域可用獨用分區加熱裝置進行加熱，其中該等分區加熱裝置由可接收不同功率之電阻絲構成。
DE 10 2012 101 717 A1描述一種裝置及一種方法，其中每一單個分區加熱裝置皆由一獨用調節裝置調節。每個調節裝置皆從溫度感測器之選擇中獲得實際值。
DE 699 06 082 T2描述一種用於數個加熱元件之溫度控制裝置。此處亦對每個加熱元件進行個別調節以最小化溫度梯度。
US 6,492,625 B1揭露一種用數個高溫計量測基板溫度之裝置與方法。使量測值相關聯。由此產生指令變數，以便能對數個分區加熱裝置進行個別調節。
US 2006/0027169 A1描述一種為基座調溫的方法，其中數個熱交換器由一共用控制裝置控制。
US 2008/0092812 A1描述一種基座，其包括數個分別由一獨立調節裝置調節之加熱器。US 2011/0073039 A1亦描述一種包含數個可加以個別調節之加熱區的反應器。此處亦向各加熱區饋入經獨立調節之加熱功率。
US 2012/0221138 A1描述一種裝置，其中由數個溫度感測器提供基板頂面不同位置之溫度量測值。每個溫度感測器皆對應一設於基座下方之加熱裝置，該加熱裝置由調節裝置提供功率。主控制裝置協調 各調節裝置。
US 6,160,242 A描述用燈管加熱基板之應用。設有數個光學溫度感測器，其為調節裝置提供輸入值，用該調節裝置調節燈管加熱裝置。
本發明之目的在於提供一種穩定的調節迴路，該調節迴路能根據變化著的處理參數來相應調整具有數個分區加熱裝置之裝置。
申請專利範圍所述之發明為達成該目的之解決方案。本發明之調節裝置提供被饋入加熱裝置之功率的值作為操縱變數，其中該加熱裝置具有數個分區加熱裝置。根據本發明，調節裝置所輸出的操縱變數為加熱功率分配器之輸入變數。該加熱功率分配器能將作為輸入變數輸送給其的總加熱功率劃分成不同之分區加熱功率，其中該等分區加熱功率之值相互成預設的固定比例。每個分區加熱功率皆被饋入其所對應的分區加熱裝置，其中分區加熱功率總和等於被分配給各分區加熱裝置之總加熱功率。該加熱裝置較佳具有奇數個分區加熱裝置，其中該等分區加熱裝置較佳分別透過一分配參數兩兩成對耦合。該分配參數可給出被饋入兩成對分區加熱裝置之功率之值的商數。該等分配參數基本上可自由預選。利用分配參數之可自由預選性，可根據不同處理參數(例如被饋入處理室之處理氣體或載氣的熱導率)來相應調整加熱功率分配。該調節迴路特別穩定之原因在於其僅提供單獨一個操縱變數，即饋入加熱裝置之總加熱功率。根據例如在先導性試驗中測定且在塗佈過程前加以設定之分配參數將該總加熱功率分配給各加熱區。除此之外，分配參數對調節無影響。在塗佈過程中較佳不更改分配參數。即使當基板溫度按照預設之溫度-時間規則發生變化(即例如形成溫度斜坡)時，亦不更改分配參數。
根據一尤佳技術方案，僅用單獨一個測溫裝置如熱電偶量測基 座溫度。但亦可藉測高溫術量測基座溫度。可在基座指向處理室側的一面量測基座溫度，但亦可在其指向加熱裝置一面進行量測。該等分區加熱裝置可為射頻線圈或射頻線圈元件。該基座較佳呈圓盤形且具有中央輪廓軸。該等分區加熱裝置較佳同心設於基座之輪廓軸周圍。在基座指向處理室的一面設有基板架，其例如由基座之表面凹陷構成，該等凹陷內可放入圓盤形基板。較佳採用半導體基板，在處理室內為其塗佈半導體層。基板架設於基座輪廓軸周圍之環形區內。一種設置三個分區加熱裝置之尤佳變體方案，其特性如下：設有第一分區加熱裝置，其在基板架中心下方延伸。在該中央分區加熱裝置之徑向內側及徑向外側分別設有一其他分區加熱裝置。徑向內側分區加熱裝置延伸至為基板架所佔據之環形區的邊緣以外。徑向外側分區加熱裝置同樣延伸至設有基板架之環形區的周邊以外。周邊分區加熱裝置與中央分區加熱裝置以最小距離相隔設置。在本發明之一較佳技術方案中，該等基板架由圓盤構成，該等圓盤嵌在基座之凹槽內且在處理過程中繞其軸線旋轉。在本發明之一較佳技術方案中，內側區域與外側區域相耦合。饋入此二區域之功率相互成固定的可預選比例。饋入中心分區加熱裝置之分區加熱功率與總功率成可預設比例，而該總功率係為被饋入該加熱裝置之所有分區加熱功率的總和。該總功率由調節器更改，以便將測溫裝置所測得之溫度調節至預設的基座溫度。若設置奇數個分區加熱裝置，則存在一沿生長區之圓弧形中心線延伸的中央分區加熱裝置。其他分區加熱裝置相對於該中心分區加熱裝置成對地對稱設於生長區區域。該生長區為基座之環形區域，基板設於該環形區域上且橫跨其最小半徑與最大半徑。
旋轉驅動式基板架具有如下優點：若基板架繞其固有軸線旋轉，基板架上便會形成大體旋轉對稱之溫度剖面。基板架邊緣區域之溫度主要取決於被饋入內側及外側分區加熱裝置之分區加熱功率。基 板架之中心溫度則主要取決於被饋入中心分區加熱裝置的加熱功率。藉由提高總加熱功率中被饋入中心分區加熱裝置之份額，可提高基板架表面之中心溫度。根據本發明之一較佳技術方案，饋入外側及內側分區加熱裝置之分區加熱功率的耦合恆定不變，中心分區加熱裝置之加熱功率則可自由選擇而不受該耦合參數影響。該分配參數的大小主要取決於處理室內之氣體的組成，特別取決於其熱性質。該分配參數較佳用於按需要來提高或降低中心溫度。在處理室內較佳實施塗佈過程，其中處理氣體被導入處理室並熱解。分解產物於基板表面沈積成層。此過程較佳為MOCVD製程。藉由本發明之方法亦能形成溫度斜坡，其實現方式例如為使基座溫度之預設值與時間相關聯。藉此可在時間上連續提高溫度。在此過程中較佳不更改分配參數。
該等分區加熱裝置較佳由呈螺旋狀設於基座底面之水冷式感應線圈構成。該等螺旋線圈之各線匝相隔一距離，此距離大體等於相鄰分區加熱裝置所相隔之距離。因此，相鄰分區加熱裝置係彼此直接鄰接。其徑向間距例如小於其到基座之第二面的距離。藉此確保該加熱裝置向基座輸送整體上無躍變的熱流。
下面參照所附圖式闡述本發明之實施例。
1‧‧‧分區加熱裝置
2‧‧‧分區加熱裝置
3‧‧‧分區加熱裝置
4‧‧‧分區加熱裝置
5‧‧‧分區加熱裝置
6‧‧‧處理室
7‧‧‧基座
7'‧‧‧頂面
7"‧‧‧底面
8‧‧‧基板架
9‧‧‧凹槽
10‧‧‧測溫裝置
11‧‧‧調節器
12‧‧‧加熱功率分配器
13‧‧‧處理室頂部
14‧‧‧進氣口
15‧‧‧基板
16‧‧‧中心
A‧‧‧分配參數
B‧‧‧分配參數
C‧‧‧分配參數
D‧‧‧分配參數
P1‧‧‧分區加熱功率
P2‧‧‧分區加熱功率
P3‧‧‧分區加熱功率
P4‧‧‧分區加熱功率
P5‧‧‧分區加熱功率
Ptot‧‧‧加熱功率
TS‧‧‧基座溫度
Z‧‧‧中心
圖1為圓盤形基座之俯視圖，其上設有六個各載有一基板15之基板架8；虛線所示為設於基座7下方之分區加熱裝置1、2及3，其呈環形圍繞基座7之中心Z延伸；圖2為沿II-II線截取之剖面圖；圖3為第一實施例之調節裝置框圖；圖4與圖2相似，係有關第二實施例；圖5為第二實施例之調節裝置框圖；圖6為在不同分配參數B下沿基板架8之直徑分佈的表面溫度示意 圖。
實施例係有關一MOCVD反應器。在一向外氣密密封之未圖示反應器殼體中設有基座7，該基座呈圓盤形且受驅繞其軸線Z旋轉。基座中心位於進氣區，進氣機構14在此進氣區內將處理氣體導入處理室6。實施例中共有六個基板架8設於呈環形圍繞進氣區延伸之生長區。該等基板架位於基座7之頂面7'的凹槽9內。設有可驅動基板架8繞其旋轉軸16旋轉之手段。為此，圓盤形基板架8較佳平放於氣墊上，該氣墊由自下方饋入凹槽9之載氣構成。藉由該載氣可迫使基板架8做旋轉運動。每個基板架8上皆設有待塗佈基板15。處理室6上方設有可加以冷卻之處理室頂部13。進氣機構14自處理室頂部13之中心朝基座7方向延伸且具有數個出氣口，該等出氣口可將例如含有三五主族元素之氣體導入處理室6。該等隨載氣(例如氫氣或氮氣)一同被導入處理室之處理氣體於基板15表面氣相分解，其中沈積III-V族層於基板15上。載氣及反應產物由未圖示真空泵運離處理室6。
在基座7下方即基座7之底面7"下方設有數個呈環形圍繞中心Z設置之分區加熱裝置。在圖1至圖3所示實施例中設有三個分區加熱裝置1、2、3，在圖4及圖5所示實施例中設有五個分區加熱裝置1、2、3、4及5。
該等分區加熱裝置可為電阻加熱裝置或感應加熱裝置。但加熱裝置1至5較佳為如螺旋線匝或同心式繞組般圍繞中心Z設置的感應線圈。全部之分區加熱裝置1至5皆設於一平面內，其中相鄰之分區加熱裝置1至5儘可能緊密地並排設置。
設有中央分區加熱裝置1，其在基板架8之中心16下方呈環形延伸。在該分區加熱裝置1區域內亦藉由測溫裝置10量測基座7之溫度。在實施例中，測溫裝置10實施為設於基座7之底面7"的熱電偶。但亦 可藉測高溫術特別是用“光管”量測基座溫度。可設置數個在不同徑向位置或不同周向位置上量測基座7之溫度的測溫裝置10。若在不同周向位置上量測基座溫度，則較佳以相同徑向距離進行量測，以便能求溫度平均值。該裝置較佳僅具有一個測溫裝置10，或者較佳僅在一個徑向位置上酌情用數個單個測溫裝置量測基座溫度。較佳在基板架8之中心16所處的圓弧線上進行量測。
在圖1至圖3所示之實施例中，除該中央分區加熱裝置外還設有位於徑向內側之分區加熱裝置3，其分佈於生長區之徑向內周下方。分區加熱裝置3主要在生長區下方即基板架8下方延伸，但其邊緣段位於進氣區(即未設基板架8之區域)下方。
在中央分區加熱裝置1的徑向外側設有徑向外側分區加熱裝置2，該分區加熱裝置同樣主要位於生長區下方，即位於基座面7'上設有基板架8之區域下方。但分區加熱裝置2亦有區段在生長區以外(即設有基板架8之區域以外)延伸。
在圖4及圖5所示之實施例中，在徑向外側分區加熱裝置2與中央分區加熱裝置1間設有另一分區加熱裝置4。在中心分區加熱裝置1與徑向內側分區加熱裝置3間設有另一分區加熱裝置5。
兩外側分區加熱裝置2、3各形成一對分區加熱裝置。設於外側分區加熱裝置2及3與中心分區加熱裝置1間的分區加熱裝置4及5同樣形成一對分區加熱裝置。
圖3示出用於為分區加熱裝置1、2、3提供加熱功率之調節裝置。指令變數為預設基板溫度TS。應當按此指令變數調節測溫裝置10所測得之溫度。為此，調節器11輸出總加熱功率Ptot至加熱功率分配器12。該調節器可為PID調節器。總加熱功率Ptot在加熱功率分配器中作為分區加熱功率P1、P2、P3被分配給各分區加熱裝置1、2、3。為此需使用透過先導性試驗或模擬計算而獲得之分配參數A、B。此等 分配參數基本上可自由預選且因處理條件不同(例如不同的總壓力或氣體組成)而不同。其基本上亦與所用載氣之比熱導率及與基座內外緣相鄰之幾何形狀有關。第一分配參數A等於被饋入外側分區加熱裝置2、3之功率的商數。故該分配參數等於內外表面之損耗比。
Figure TWI676704B_D0001
第二分配參數B決定總功率中被饋入中心分區加熱裝置1之份額。
Figure TWI676704B_D0002
藉由分配參數A可對加熱裝置產生於基板架8之邊緣區域(即產生於平放在基板架上之基板15的邊緣)的作用施加影響。分配參數B用於調整被饋入旋轉基板15之中心的功率。亦即，基板15之中心溫度可因分配參數B提高而升高，或者可因分配參數B減小而下降。
圖6示出三條溫度曲線a、b、c，其係關於自下方被加熱之基板架8上的表面溫度。曲線a示出分配參數B具有較小值時的能量饋入。可以看出，基板架8之中心表面溫度低於邊緣表面溫度。
曲線b為分配參數B提高時沿基板架8之直徑分佈的溫度。由於總加熱功率Ptot保持不變，饋入邊緣區域即周邊分區加熱裝置2、3的功率少於曲線a所示之情形。邊緣溫度與中心溫度之差因此而減小。
曲線c示出當分配參數B增大時如何能進一步提高基板架8之中心的表面溫度。由於總功率Ptot在此亦保持恆定，饋入周邊分區加熱裝置2及3的功率P2、P3減小。
其中分配參數A保持恆定。
在圖4及圖5所示之實施例中，不僅兩周邊分區加熱裝置2及3透過分配參數A耦合成對。中間分區加熱裝置4、5亦透過分配參數C而相耦合。
Figure TWI676704B_D0003
根據本發明，成對之分區加熱裝置分別依功率而相耦合，從而形成相對於中心分區加熱裝置1對稱分佈之分區加熱裝置。
利用分配參數D可對被饋入該對分區加熱裝置或被饋入兩分區加熱裝置3其中之一之按百分比計算的功率進行調節。
Figure TWI676704B_D0004
作為替代方案，亦可藉由該第四參數將兩對分區加熱裝置即分區加熱裝置2及3與分區加熱裝置4及5相耦合。
基座7不是必須呈圓盤形。其亦可由一具有平整表面以供放置待塗佈基板15之物體構成。基座背面可凸出一例如銷栓形式之中央凸出部，其伸入線圈以改良與射頻場之耦合。
亦可以其他方式實現各線圈之耦合，例如可將直接相鄰的線圈相耦合。
所有已揭露特徵(自身即)為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容，該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項採用可選並列措辭對本發明針對先前技術之改良方案的特徵予以說明，其目的主要在於在該等請求項基礎上進行分案申請。

Claims (10)

  1. 一種用於處理基板之裝置，包括：設於處理室(6)中之基座(7)，其具有面向該處理室(6)以容置至少一基板(15)之第一面(7')及背向於該第一面之第二面(7")，該第二面可被一具有至少三個分區加熱裝置之加熱裝置加熱；調節裝置，其指令變數為基座溫度(TS)，其控制變數為利用測溫裝置(10)測得之該基座(7)的實際溫度，且其操縱變數為饋入該加熱裝置之總加熱功率(Ptot)的值；及加熱功率分配器(12)，該加熱功率分配器僅接收該操縱變數(Ptot)作為輸入變數且為每個分區加熱裝置(1,2,3,4,5)皆提供一分區加熱功率(P1,P2,P3,P4,P5)作為輸出變數，其中該等分區加熱功率(P1,P2,P3,P4,P5)之值的總和等於該操縱變數(Ptot)，並且該等分區加熱功率(P1,P2,P3,P4,P5)之值相互成固定比例，其中，該等特定比例可藉由可預選的分配參數(A,B,C,D)加以更改，其中該基座(7)呈圓盤形，及複數個基板架(8)呈環形圍繞該基座(7)之中心設置，其特徵在於，該等分區加熱裝置(1,2,3,4,5)呈環形圍繞該基座(7)之中心設置，使得一中央分區加熱裝置(1)位於該等基板架(8)之中心下方，一徑向內側分區加熱裝置(3)位於該等呈環形設置之基板架(8)之內緣下方的區域，並且一徑向外側分區加熱裝置(2)位於該等呈環形設置之基板架(8)之外緣下方的區域，其中，至少一分配參數(A,C)為饋入該徑向外側分區加熱裝置(2)及該徑向內側分區加熱裝置(3)之分區加熱功率(P2,P3；P4,P5)之商，且一額外的分配參數(B)述明該饋入中央分區加熱裝置(1)之分區加熱功率(P1)及該總功率之比例。
  2. 如請求項1之裝置，其特徵在於，至少一對其他分區加熱裝置(4,5)，其中被饋入相應分區加熱裝置(4,5)的分區加熱功率(P4,P5)相互成固定比例(C)。
  3. 如請求項1之裝置，其特徵在於，具有相互成固定比例(C)之分區加熱功率(P4,P5)被饋入至少一對其他分區加熱裝置(4,5)。
  4. 如請求項1之裝置，其特徵在於，該等分區加熱裝置(1,2,3,4,5)為用於發出高頻交變場之高頻線圈，該等高頻線圈在基座(7)中感應出渦電流。
  5. 一種處理基板之方法，其中：至少一基板(15)放置在設於處理室(6)中之基座(7)的第一面(7')上及用一具有至少三個呈環形圍繞基座(7)之中心設置的分區加熱裝置(1,2,3,4,5)的加熱裝置加熱背向於該第一面(7')之第二面(7")，其中被饋入該等加熱裝置之總加熱功率(Ptot)由調節裝置(11)調節，其指令變數為基座溫度(TS)，其控制變數為利用溫度裝置(10)測得之該基座(7)的實際溫度，且其操縱變數僅為該總加熱功率(Ptot)的值，其中，加熱功率分配器(12)為每個分區加熱裝置(1,2,3,4,5)饋入各別加熱功率(p1,P2,P3,P4,P5)，該等加熱功率(P1,P2,P3,P4,P5)的總和為該總加熱功率(Ptot)，且其中按可預選之分配參數(A,B,C,D)將該總加熱功率(Ptot)劃分成各分區加熱功率(P1,P2,P3,P4,P5)，其特徵在於，複數個呈環形圍繞該基座(7)之中心之基板架(8)設置於該基座(7)的第一面(7')上，其中一中央分區加熱裝置(1)位於該等基板架(8)之中心下方，一徑向內側分區加熱裝置(3)位於該等呈環形設置之基板架(8)之內緣下方的區域，並且一徑向外側分區加熱裝置(2)位於該等呈環形設置之基板架(8)之外緣下方的區域，其中，至少一分配參數(A,C)為饋入該徑向外側分區加熱裝置(2)及該徑向內側分區加熱裝置(3)之分區加熱功率(P2,P3；P4,P5)之商，且一額外的分配參數(B)述明該饋入中央分區加熱裝置(1)之分區加熱功率(P1)及該總功率之比例。
  6. 如請求項5之方法，其特徵在於，至少一對其他分區加熱裝置(4,5)，其中被饋入相應分區加熱裝置(4,5)的分區加熱功率(P4,P5)相互成固定比例(C)。
  7. 如請求項5之方法，其特徵在於，根據該處理室內所形成的氣體總壓力來相應調整該等分配參數(A,B,C,D)。
  8. 如請求項5之方法，其特徵在於，根據最高處理溫度來相應調整該等分配參數(A,B,C,D)。
  9. 如請求項5之方法，其特徵在於，藉由保持該等分配參數(A,B,C,D)為固定值形成溫度斜坡。
  10. 如請求項5之方法，其特徵在於，藉由模擬計算及/或先導性試驗中的量測來確定該等分配參數(A,B,C,D)。
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