JP6302186B2 - 表示装置 - Google Patents

表示装置 Download PDF

Info

Publication number
JP6302186B2
JP6302186B2 JP2013154158A JP2013154158A JP6302186B2 JP 6302186 B2 JP6302186 B2 JP 6302186B2 JP 2013154158 A JP2013154158 A JP 2013154158A JP 2013154158 A JP2013154158 A JP 2013154158A JP 6302186 B2 JP6302186 B2 JP 6302186B2
Authority
JP
Japan
Prior art keywords
partition
light
layer
pixel
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013154158A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014044938A (ja
JP2014044938A5 (OSRAM
Inventor
敏行 伊佐
敏行 伊佐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013154158A priority Critical patent/JP6302186B2/ja
Publication of JP2014044938A publication Critical patent/JP2014044938A/ja
Publication of JP2014044938A5 publication Critical patent/JP2014044938A5/ja
Application granted granted Critical
Publication of JP6302186B2 publication Critical patent/JP6302186B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Optical Filters (AREA)
JP2013154158A 2012-08-01 2013-07-25 表示装置 Active JP6302186B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013154158A JP6302186B2 (ja) 2012-08-01 2013-07-25 表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012171410 2012-08-01
JP2012171410 2012-08-01
JP2013154158A JP6302186B2 (ja) 2012-08-01 2013-07-25 表示装置

Publications (3)

Publication Number Publication Date
JP2014044938A JP2014044938A (ja) 2014-03-13
JP2014044938A5 JP2014044938A5 (OSRAM) 2016-07-28
JP6302186B2 true JP6302186B2 (ja) 2018-03-28

Family

ID=50024801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013154158A Active JP6302186B2 (ja) 2012-08-01 2013-07-25 表示装置

Country Status (3)

Country Link
US (2) US8981638B2 (OSRAM)
JP (1) JP6302186B2 (OSRAM)
KR (1) KR102105287B1 (OSRAM)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6302186B2 (ja) * 2012-08-01 2018-03-28 株式会社半導体エネルギー研究所 表示装置
JP6019997B2 (ja) 2012-09-26 2016-11-02 ソニー株式会社 表示装置および電子機器
JP5991490B2 (ja) * 2013-03-22 2016-09-14 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置
KR20150019325A (ko) * 2013-08-13 2015-02-25 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조방법
KR20150024729A (ko) * 2013-08-27 2015-03-09 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
JP2015128003A (ja) * 2013-12-27 2015-07-09 ソニー株式会社 表示装置および電子機器
TWI765679B (zh) 2014-05-30 2022-05-21 日商半導體能源研究所股份有限公司 觸控面板
KR102533396B1 (ko) * 2014-07-31 2023-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 장치
JP6560847B2 (ja) * 2014-08-07 2019-08-14 株式会社ジャパンディスプレイ 有機エレクトロルミネセンス表示装置
JP2016126860A (ja) * 2014-12-26 2016-07-11 ソニー株式会社 表示装置、表示装置の製造方法および電子機器
JP2017010726A (ja) * 2015-06-19 2017-01-12 株式会社ジャパンディスプレイ 表示装置
KR102571667B1 (ko) * 2015-06-30 2023-08-30 엘지디스플레이 주식회사 유기발광표시장치
EP3113227B1 (en) * 2015-06-30 2023-08-16 LG Display Co., Ltd. Organic light emitting display device
WO2017037560A1 (en) 2015-08-28 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6600523B2 (ja) * 2015-10-05 2019-10-30 株式会社Ｊｏｌｅｄ 表示装置および電子機器
US10573667B2 (en) 2015-12-11 2020-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102642198B1 (ko) * 2016-04-04 2024-03-05 삼성디스플레이 주식회사 유기발광 디스플레이 장치
US10692946B2 (en) * 2016-05-18 2020-06-23 Joled Inc. Organic EL display panel and method for producing same
CN106783927B (zh) * 2016-12-28 2020-02-11 上海天马有机发光显示技术有限公司 一种oled显示装置及其制作方法
KR102604310B1 (ko) 2016-12-30 2023-11-20 엘지디스플레이 주식회사 유기 발광 표시 장치
JP2018190551A (ja) * 2017-04-28 2018-11-29 キヤノン株式会社 有機発光装置、撮像装置、及び有機発光装置の製造方法
WO2019016627A1 (en) * 2017-07-18 2019-01-24 King Abdullah University Of Science And Technology SINGLE MATERIAL ELECTRONIC DEVICE AND METHOD FOR PRODUCING SUCH ELECTRONIC DEVICE
KR102522110B1 (ko) * 2017-11-29 2023-04-13 엘지디스플레이 주식회사 유기발광 표시장치
KR102389345B1 (ko) * 2017-11-30 2022-04-20 엘지디스플레이 주식회사 유기 발광 디스플레이 장치
KR20190068315A (ko) * 2017-12-08 2019-06-18 엘지디스플레이 주식회사 전계 발광 표시장치
CN108054191B (zh) * 2018-01-11 2020-02-07 京东方科技集团股份有限公司 一种显示面板及显示装置
KR102512900B1 (ko) * 2018-02-05 2023-03-23 삼성디스플레이 주식회사 표시 장치
KR102582613B1 (ko) 2018-07-10 2023-09-26 삼성디스플레이 주식회사 발광 장치 및 이를 구비한 표시 장치
KR102564169B1 (ko) * 2018-07-30 2023-08-04 엘지디스플레이 주식회사 유기발광 표시장치와 그를 포함한 헤드 장착형 디스플레이, 및 그의 제조방법
CN109065754A (zh) * 2018-08-03 2018-12-21 武汉华星光电半导体显示技术有限公司 一种oled显示面板及其制备方法
CN109148718B (zh) * 2018-08-20 2020-08-04 武汉华星光电半导体显示技术有限公司 有机发光显示面板及其制造方法
KR102688181B1 (ko) * 2018-09-11 2024-07-24 엘지디스플레이 주식회사 유기발광표시장치와 그의 제조방법
KR102693172B1 (ko) 2018-09-28 2024-08-07 엘지디스플레이 주식회사 표시장치
CN109473464B (zh) * 2018-11-16 2021-01-26 京东方科技集团股份有限公司 一种显示面板及其制备方法
CN109686764A (zh) * 2018-12-19 2019-04-26 武汉华星光电半导体显示技术有限公司 一种显示面板及其制作方法
CN109888130A (zh) * 2019-01-30 2019-06-14 武汉华星光电半导体显示技术有限公司 Oled显示装置的制备方法及oled显示装置
CN109860419A (zh) * 2019-01-30 2019-06-07 武汉华星光电半导体显示技术有限公司 显示器及其制备方法
US11145700B2 (en) * 2019-03-28 2021-10-12 Apple Inc. Organic light-emitting diode display with pixel definition layers
KR20200119946A (ko) * 2019-04-10 2020-10-21 삼성디스플레이 주식회사 표시 장치
JP7006653B2 (ja) * 2019-05-09 2022-01-24 セイコーエプソン株式会社 表示装置、および電子機器
CN110459585B (zh) * 2019-08-30 2021-09-24 云谷（固安）科技有限公司 显示面板以及显示装置
CN110610972B (zh) * 2019-09-19 2022-06-03 京东方科技集团股份有限公司 一种显示基板及其制备方法、显示装置
US11864443B2 (en) 2019-10-04 2024-01-02 Jdi Design And Development G. K. Self-luminous display panel having different optical distances between light-shielding film and light emission reference points depending on light emission color
JP7513472B2 (ja) * 2019-10-04 2024-07-09 ＪＤＩ Ｄｅｓｉｇｎ ａｎｄ Ｄｅｖｅｌｏｐｍｅｎｔ 合同会社 自発光型表示パネル
KR102763277B1 (ko) 2019-10-11 2025-02-10 삼성디스플레이 주식회사 발광 표시 장치
TWI721736B (zh) * 2019-12-27 2021-03-11 友達光電股份有限公司 半導體基板
WO2021184235A1 (zh) * 2020-03-18 2021-09-23 京东方科技集团股份有限公司 一种阵列基板及其制备方法和显示面板
US11980046B2 (en) * 2020-05-27 2024-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming an isolation structure having multiple thicknesses to mitigate damage to a display device
KR102734419B1 (ko) * 2020-07-03 2024-11-26 삼성디스플레이 주식회사 표시 장치
KR20220005276A (ko) * 2020-07-06 2022-01-13 엘지디스플레이 주식회사 표시 장치
CN112117315A (zh) * 2020-09-23 2020-12-22 京东方科技集团股份有限公司 显示面板、显示屏和显示屏设备
CN112420945B (zh) * 2020-11-11 2022-07-12 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
JP7690771B2 (ja) * 2021-04-30 2025-06-11 セイコーエプソン株式会社 電気光学装置および電子機器
CN113421899A (zh) * 2021-06-11 2021-09-21 武汉华星光电技术有限公司 阵列基板、阵列基板制造方法及显示面板
US20250024722A1 (en) * 2021-11-29 2025-01-16 Semiconductor Energy Laboratory Co., Ltd. Display Device And Method For Manufacturing Display Device
JP7767155B2 (ja) * 2022-01-06 2025-11-11 株式会社Magnolia White 表示装置
CN116600594A (zh) * 2023-06-20 2023-08-15 绵阳惠科光电科技有限公司 显示面板及其制备方法

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6472557A (en) 1987-09-11 1989-03-17 Seiko Instr & Electronics Image sensor
JP3899566B2 (ja) * 1996-11-25 2007-03-28 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
JP3520396B2 (ja) 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
JP3580092B2 (ja) 1997-08-21 2004-10-20 セイコーエプソン株式会社 アクティブマトリクス型表示装置
CN100550472C (zh) 1998-03-17 2009-10-14 精工爱普生株式会社 薄膜构图的衬底及其表面处理
JPH11339958A (ja) 1998-05-22 1999-12-10 Casio Comput Co Ltd 電界発光素子の製造方法
KR100697413B1 (ko) 1998-07-30 2007-03-19 마츠시타 덴끼 산교 가부시키가이샤 액정 표시 장치, 영상 디스플레이 장치, 정보 처리 장치, 및 그 제조 방법
TW459275B (en) 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
EP1096568A3 (en) 1999-10-28 2007-10-24 Sony Corporation Display apparatus and method for fabricating the same
KR100720066B1 (ko) 1999-11-09 2007-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법
JP2001148291A (ja) 1999-11-19 2001-05-29 Sony Corp 表示装置及びその製造方法
US6821827B2 (en) 1999-12-28 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4132528B2 (ja) 2000-01-14 2008-08-13 シャープ株式会社 液晶表示装置の製造方法
US6559594B2 (en) 2000-02-03 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TW484238B (en) 2000-03-27 2002-04-21 Semiconductor Energy Lab Light emitting device and a method of manufacturing the same
US20010030511A1 (en) 2000-04-18 2001-10-18 Shunpei Yamazaki Display device
TW522752B (en) 2000-10-20 2003-03-01 Toshiba Corp Self-luminous display panel and method of manufacturing the same
JP3695308B2 (ja) 2000-10-27 2005-09-14 日本電気株式会社 アクティブマトリクス有機ｅｌ表示装置及びその製造方法
TW522577B (en) * 2000-11-10 2003-03-01 Semiconductor Energy Lab Light emitting device
JP2002208484A (ja) 2001-01-12 2002-07-26 Tohoku Pioneer Corp 有機ｅｌディスプレイ及びその製造方法
US6720198B2 (en) 2001-02-19 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6992439B2 (en) 2001-02-22 2006-01-31 Semiconductor Energy Laboratory Co., Ltd. Display device with sealing structure for protecting organic light emitting element
JP4801278B2 (ja) 2001-04-23 2011-10-26 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP2003059671A (ja) 2001-08-20 2003-02-28 Sony Corp 表示素子及びその製造方法
JP2003123969A (ja) 2001-10-17 2003-04-25 Matsushita Electric Ind Co Ltd 蒸着用マスクおよび有機エレクトロルミネッセンスディスプレイの製造方法
US6852997B2 (en) 2001-10-30 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6815723B2 (en) 2001-12-28 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
SG126714A1 (en) 2002-01-24 2006-11-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2003243171A (ja) 2002-02-18 2003-08-29 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセンスディスプレイパネルおよびその製造方法
JP3481232B2 (ja) 2002-03-05 2003-12-22 三洋電機株式会社 有機エレクトロルミネッセンスパネルの製造方法
JP2003317971A (ja) 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7230271B2 (en) 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
US7094684B2 (en) 2002-09-20 2006-08-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7792489B2 (en) 2003-12-26 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic appliance, and method for manufacturing light emitting device
JP4664604B2 (ja) 2004-02-18 2011-04-06 Ｔｄｋ株式会社 画像表示装置
JP2005317382A (ja) * 2004-04-28 2005-11-10 Semiconductor Energy Lab Co Ltd 発光装置、電子機器およびテレビジョン装置
KR100736008B1 (ko) * 2004-06-07 2007-07-06 가시오게산키 가부시키가이샤 표시장치 및 그 제조방법
JP2006091860A (ja) * 2004-08-23 2006-04-06 Semiconductor Energy Lab Co Ltd 表示装置及びその駆動方法並びに電子機器
US7753751B2 (en) 2004-09-29 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the display device
US8772783B2 (en) 2004-10-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Display device
EP1760776B1 (en) 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
JP2007141821A (ja) 2005-10-17 2007-06-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI460851B (zh) 2005-10-17 2014-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
US8130177B2 (en) * 2008-03-13 2012-03-06 Panasonic Corporation Organic EL display panel and manufacturing method thereof
KR101635625B1 (ko) 2008-04-18 2016-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 그 제작 방법
WO2009128522A1 (en) 2008-04-18 2009-10-22 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
JP4975064B2 (ja) * 2008-05-28 2012-07-11 パナソニック株式会社 発光装置及びその製造方法
RU2477547C2 (ru) * 2008-09-19 2013-03-10 Шарп Кабусики Кайся Сформированная в виде тонкой пленки подложка, органическое электролюминесцентное устройство отображения, подложка цветного фильтра и способ изготовления сформированной в виде тонкой пленки подложки
TWI607670B (zh) 2009-01-08 2017-12-01 半導體能源研究所股份有限公司 發光裝置及電子裝置
JP2011249089A (ja) * 2010-05-25 2011-12-08 Panasonic Corp 有機ｅｌ表示パネルとその製造方法、および有機ｅｌ表示装置
JP5298244B2 (ja) * 2010-10-19 2013-09-25 シャープ株式会社 蒸着装置
KR102004305B1 (ko) 2011-02-11 2019-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 그 제작 방법, 그리고 조명 장치 및 표시 장치
WO2012108482A1 (en) 2011-02-11 2012-08-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
WO2012115016A1 (en) 2011-02-25 2012-08-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device using light-emitting device
TWI562423B (en) 2011-03-02 2016-12-11 Semiconductor Energy Lab Co Ltd Light-emitting device and lighting device
KR20120106568A (ko) 2011-03-18 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치의 제작 방법
KR101920374B1 (ko) 2011-04-27 2018-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 그 제작 방법
KR101933952B1 (ko) 2011-07-01 2018-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 전자 기기 및 조명 장치
KR102082793B1 (ko) 2012-05-10 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
JP6302186B2 (ja) * 2012-08-01 2018-03-28 株式会社半導体エネルギー研究所 表示装置

Also Published As

Publication number Publication date
KR20140017435A (ko) 2014-02-11
US20150187852A1 (en) 2015-07-02
KR102105287B1 (ko) 2020-04-28
US9356082B2 (en) 2016-05-31
US20140035456A1 (en) 2014-02-06
JP2014044938A (ja) 2014-03-13
US8981638B2 (en) 2015-03-17

Similar Documents

Publication Publication Date Title
JP6302186B2 (ja) 表示装置
US12457802B2 (en) Display device and method for manufacturing display device
CN106992201B (zh) 有机发光显示装置
CN110611037B (zh) 显示装置及其制造方法
US9478742B2 (en) Electroluminescence device and manufacturing method thereof
US9978813B2 (en) Organic light-emitting display apparatus
CN102376747A (zh) 显示装置及其制造方法
JP7504580B2 (ja) 電子デバイス、表示装置、光電変換装置、電子機器、照明装置及び移動体
KR20100088993A (ko) 유기 발광 표시 장치
JP2011014870A (ja) 有機電界発光表示装置及びその製造方法
EP3640992B1 (en) Display apparatus having a light-emitting device
US20210083025A1 (en) Display device
TWI835233B (zh) 具有氧化物半導體的顯示設備
JP2023070156A (ja) 表示装置
JP4502661B2 (ja) カラー発光表示装置
US20070126012A1 (en) Light-emitting element and display device
KR20210040203A (ko) 유기 발광 표시 장치
KR20150137204A (ko) 유기전계발광소자
KR20250132892A (ko) 전계 발광 표시 장치
CN119654015A (zh) 一种硅基oled自感应亮度调节显示结构及其制作方法
KR20220097203A (ko) 표시 장치

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160610

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160610

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20161227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170207

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170801

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171101

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20171109

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180206

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180302

R150 Certificate of patent or registration of utility model

Ref document number: 6302186

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250