JP6277015B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6277015B2
JP6277015B2 JP2014037691A JP2014037691A JP6277015B2 JP 6277015 B2 JP6277015 B2 JP 6277015B2 JP 2014037691 A JP2014037691 A JP 2014037691A JP 2014037691 A JP2014037691 A JP 2014037691A JP 6277015 B2 JP6277015 B2 JP 6277015B2
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JP
Japan
Prior art keywords
sintered body
sample
electrode
processing apparatus
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014037691A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015162618A (ja
JP2015162618A5 (enExample
Inventor
匠 丹藤
匠 丹藤
浩平 佐藤
浩平 佐藤
裕通 川崎
裕通 川崎
牧野　昭孝
昭孝 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2014037691A priority Critical patent/JP6277015B2/ja
Priority to TW103126213A priority patent/TWI564958B/zh
Priority to KR1020140107869A priority patent/KR101613950B1/ko
Priority to US14/463,685 priority patent/US20150248994A1/en
Publication of JP2015162618A publication Critical patent/JP2015162618A/ja
Publication of JP2015162618A5 publication Critical patent/JP2015162618A5/ja
Application granted granted Critical
Publication of JP6277015B2 publication Critical patent/JP6277015B2/ja
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Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014037691A 2014-02-28 2014-02-28 プラズマ処理装置 Active JP6277015B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014037691A JP6277015B2 (ja) 2014-02-28 2014-02-28 プラズマ処理装置
TW103126213A TWI564958B (zh) 2014-02-28 2014-07-31 Plasma processing device
KR1020140107869A KR101613950B1 (ko) 2014-02-28 2014-08-19 플라즈마 처리장치
US14/463,685 US20150248994A1 (en) 2014-02-28 2014-08-20 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014037691A JP6277015B2 (ja) 2014-02-28 2014-02-28 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2015162618A JP2015162618A (ja) 2015-09-07
JP2015162618A5 JP2015162618A5 (enExample) 2017-03-02
JP6277015B2 true JP6277015B2 (ja) 2018-02-07

Family

ID=54007100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014037691A Active JP6277015B2 (ja) 2014-02-28 2014-02-28 プラズマ処理装置

Country Status (4)

Country Link
US (1) US20150248994A1 (enExample)
JP (1) JP6277015B2 (enExample)
KR (1) KR101613950B1 (enExample)
TW (1) TWI564958B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6592340B2 (ja) * 2015-11-18 2019-10-16 アズビル株式会社 ポジショナ
JP6924618B2 (ja) 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
JP6811144B2 (ja) 2017-05-30 2021-01-13 東京エレクトロン株式会社 プラズマ処理装置の静電チャックを運用する方法
JP7052735B2 (ja) * 2017-09-29 2022-04-12 住友大阪セメント株式会社 静電チャック装置
JP7238780B2 (ja) * 2017-09-29 2023-03-14 住友大阪セメント株式会社 静電チャック装置
JP7149739B2 (ja) * 2018-06-19 2022-10-07 東京エレクトロン株式会社 載置台及び基板処理装置
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
CN112204722A (zh) * 2018-07-07 2021-01-08 应用材料公司 用于高rf功率工艺的半导体处理装置
JP7134020B2 (ja) * 2018-08-17 2022-09-09 東京エレクトロン株式会社 バルブ装置、処理装置、および制御方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68909665T2 (de) * 1988-04-26 1994-02-10 Toto Ltd Verfahren zur Herstellung dielektrischer Keramik für elektrostatische Haltevorrichtungen.
JPH04367247A (ja) * 1991-06-14 1992-12-18 Kyocera Corp セラミック製静電チャック
JPH05299494A (ja) * 1992-04-22 1993-11-12 Fujitsu Ltd 静電吸着装置
JPH07130826A (ja) * 1993-11-01 1995-05-19 Anelva Corp 静電チャック
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US6693789B2 (en) * 2000-04-05 2004-02-17 Sumitomo Osaka Cement Co., Ltd. Susceptor and manufacturing method thereof
US20030010292A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Electrostatic chuck with dielectric coating
JP2004319700A (ja) 2003-04-15 2004-11-11 Nhk Spring Co Ltd 静電チャック
JP4467453B2 (ja) * 2004-09-30 2010-05-26 日本碍子株式会社 セラミックス部材及びその製造方法
JP5084155B2 (ja) * 2005-03-11 2012-11-28 日本碍子株式会社 アルミナ焼結体及びその製造方法、並びに、このアルミナ焼結体を用いた静電チャック及びその製造方法
US20080062609A1 (en) * 2006-08-10 2008-03-13 Shinji Himori Electrostatic chuck device
US8284538B2 (en) * 2006-08-10 2012-10-09 Tokyo Electron Limited Electrostatic chuck device
JP2008091353A (ja) * 2006-09-07 2008-04-17 Ngk Insulators Ltd 静電チャック
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
JP5201527B2 (ja) * 2008-03-28 2013-06-05 東京エレクトロン株式会社 静電チャック、及びその製造方法
US7929269B2 (en) * 2008-09-04 2011-04-19 Momentive Performance Materials Inc. Wafer processing apparatus having a tunable electrical resistivity
TW201209957A (en) * 2010-05-28 2012-03-01 Praxair Technology Inc Substrate supports for semiconductor applications
JP5618638B2 (ja) * 2010-06-07 2014-11-05 株式会社日立ハイテクノロジーズ プラズマ処理装置または試料載置台
JP5876992B2 (ja) * 2011-04-12 2016-03-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6052169B2 (ja) * 2011-04-27 2016-12-27 住友大阪セメント株式会社 静電チャック装置
JP5957812B2 (ja) * 2011-06-21 2016-07-27 住友大阪セメント株式会社 静電チャック装置
US9916998B2 (en) * 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer

Also Published As

Publication number Publication date
KR101613950B1 (ko) 2016-04-20
US20150248994A1 (en) 2015-09-03
TWI564958B (zh) 2017-01-01
JP2015162618A (ja) 2015-09-07
TW201533795A (zh) 2015-09-01
KR20150102669A (ko) 2015-09-07

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