KR101613950B1 - 플라즈마 처리장치 - Google Patents

플라즈마 처리장치 Download PDF

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Publication number
KR101613950B1
KR101613950B1 KR1020140107869A KR20140107869A KR101613950B1 KR 101613950 B1 KR101613950 B1 KR 101613950B1 KR 1020140107869 A KR1020140107869 A KR 1020140107869A KR 20140107869 A KR20140107869 A KR 20140107869A KR 101613950 B1 KR101613950 B1 KR 101613950B1
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South Korea
Prior art keywords
sintered body
sample
chamber
plasma
processing
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Korean (ko)
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KR20150102669A (ko
Inventor
다쿠미 단도
고헤이 사토
히로미치 가와사키
아키타카 마키노
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020140107869A 2014-02-28 2014-08-19 플라즈마 처리장치 Active KR101613950B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-037691 2014-02-28
JP2014037691A JP6277015B2 (ja) 2014-02-28 2014-02-28 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20150102669A KR20150102669A (ko) 2015-09-07
KR101613950B1 true KR101613950B1 (ko) 2016-04-20

Family

ID=54007100

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140107869A Active KR101613950B1 (ko) 2014-02-28 2014-08-19 플라즈마 처리장치

Country Status (4)

Country Link
US (1) US20150248994A1 (enExample)
JP (1) JP6277015B2 (enExample)
KR (1) KR101613950B1 (enExample)
TW (1) TWI564958B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6592340B2 (ja) * 2015-11-18 2019-10-16 アズビル株式会社 ポジショナ
JP6811144B2 (ja) 2017-05-30 2021-01-13 東京エレクトロン株式会社 プラズマ処理装置の静電チャックを運用する方法
JP6924618B2 (ja) 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
WO2019065233A1 (ja) * 2017-09-29 2019-04-04 住友大阪セメント株式会社 静電チャック装置
US11887877B2 (en) * 2017-09-29 2024-01-30 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
JP7149739B2 (ja) * 2018-06-19 2022-10-07 東京エレクトロン株式会社 載置台及び基板処理装置
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
SG11202010340WA (en) * 2018-07-07 2021-01-28 Applied Materials Inc Semiconductor processing apparatus for high rf power process
JP7134020B2 (ja) * 2018-08-17 2022-09-09 東京エレクトロン株式会社 バルブ装置、処理装置、および制御方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319700A (ja) 2003-04-15 2004-11-11 Nhk Spring Co Ltd 静電チャック
JP2011258614A (ja) * 2010-06-07 2011-12-22 Hitachi High-Technologies Corp プラズマ処理装置または試料載置台

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE95513T1 (de) * 1988-04-26 1993-10-15 Toto Ltd Verfahren zur herstellung dielektrischer keramik fuer elektrostatische haltevorrichtungen.
JPH04367247A (ja) * 1991-06-14 1992-12-18 Kyocera Corp セラミック製静電チャック
JPH05299494A (ja) * 1992-04-22 1993-11-12 Fujitsu Ltd 静電吸着装置
JPH07130826A (ja) * 1993-11-01 1995-05-19 Anelva Corp 静電チャック
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US6693789B2 (en) * 2000-04-05 2004-02-17 Sumitomo Osaka Cement Co., Ltd. Susceptor and manufacturing method thereof
US20030010292A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Electrostatic chuck with dielectric coating
JP4467453B2 (ja) * 2004-09-30 2010-05-26 日本碍子株式会社 セラミックス部材及びその製造方法
JP5084155B2 (ja) * 2005-03-11 2012-11-28 日本碍子株式会社 アルミナ焼結体及びその製造方法、並びに、このアルミナ焼結体を用いた静電チャック及びその製造方法
US20080062609A1 (en) * 2006-08-10 2008-03-13 Shinji Himori Electrostatic chuck device
US8284538B2 (en) * 2006-08-10 2012-10-09 Tokyo Electron Limited Electrostatic chuck device
JP2008091353A (ja) * 2006-09-07 2008-04-17 Ngk Insulators Ltd 静電チャック
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
JP5201527B2 (ja) * 2008-03-28 2013-06-05 東京エレクトロン株式会社 静電チャック、及びその製造方法
US7929269B2 (en) * 2008-09-04 2011-04-19 Momentive Performance Materials Inc. Wafer processing apparatus having a tunable electrical resistivity
TW201209957A (en) * 2010-05-28 2012-03-01 Praxair Technology Inc Substrate supports for semiconductor applications
JP5876992B2 (ja) * 2011-04-12 2016-03-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2012147931A1 (ja) * 2011-04-27 2012-11-01 住友大阪セメント株式会社 静電チャック装置
JP5957812B2 (ja) * 2011-06-21 2016-07-27 住友大阪セメント株式会社 静電チャック装置
US9916998B2 (en) * 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319700A (ja) 2003-04-15 2004-11-11 Nhk Spring Co Ltd 静電チャック
JP2011258614A (ja) * 2010-06-07 2011-12-22 Hitachi High-Technologies Corp プラズマ処理装置または試料載置台

Also Published As

Publication number Publication date
KR20150102669A (ko) 2015-09-07
TW201533795A (zh) 2015-09-01
JP6277015B2 (ja) 2018-02-07
JP2015162618A (ja) 2015-09-07
TWI564958B (zh) 2017-01-01
US20150248994A1 (en) 2015-09-03

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