TWI564958B - Plasma processing device - Google Patents

Plasma processing device Download PDF

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Publication number
TWI564958B
TWI564958B TW103126213A TW103126213A TWI564958B TW I564958 B TWI564958 B TW I564958B TW 103126213 A TW103126213 A TW 103126213A TW 103126213 A TW103126213 A TW 103126213A TW I564958 B TWI564958 B TW I564958B
Authority
TW
Taiwan
Prior art keywords
sample
sintered body
processing chamber
electrode
plasma
Prior art date
Application number
TW103126213A
Other languages
English (en)
Chinese (zh)
Other versions
TW201533795A (zh
Inventor
丹藤匠
佐藤浩平
川崎裕通
牧野昭孝
Original Assignee
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201533795A publication Critical patent/TW201533795A/zh
Application granted granted Critical
Publication of TWI564958B publication Critical patent/TWI564958B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW103126213A 2014-02-28 2014-07-31 Plasma processing device TWI564958B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014037691A JP6277015B2 (ja) 2014-02-28 2014-02-28 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201533795A TW201533795A (zh) 2015-09-01
TWI564958B true TWI564958B (zh) 2017-01-01

Family

ID=54007100

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103126213A TWI564958B (zh) 2014-02-28 2014-07-31 Plasma processing device

Country Status (4)

Country Link
US (1) US20150248994A1 (enExample)
JP (1) JP6277015B2 (enExample)
KR (1) KR101613950B1 (enExample)
TW (1) TWI564958B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6592340B2 (ja) * 2015-11-18 2019-10-16 アズビル株式会社 ポジショナ
JP6811144B2 (ja) 2017-05-30 2021-01-13 東京エレクトロン株式会社 プラズマ処理装置の静電チャックを運用する方法
JP6924618B2 (ja) 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
WO2019065233A1 (ja) * 2017-09-29 2019-04-04 住友大阪セメント株式会社 静電チャック装置
US11887877B2 (en) * 2017-09-29 2024-01-30 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
JP7149739B2 (ja) * 2018-06-19 2022-10-07 東京エレクトロン株式会社 載置台及び基板処理装置
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
SG11202010340WA (en) * 2018-07-07 2021-01-28 Applied Materials Inc Semiconductor processing apparatus for high rf power process
JP7134020B2 (ja) * 2018-08-17 2022-09-09 東京エレクトロン株式会社 バルブ装置、処理装置、および制御方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080062609A1 (en) * 2006-08-10 2008-03-13 Shinji Himori Electrostatic chuck device
US8284538B2 (en) * 2006-08-10 2012-10-09 Tokyo Electron Limited Electrostatic chuck device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE95513T1 (de) * 1988-04-26 1993-10-15 Toto Ltd Verfahren zur herstellung dielektrischer keramik fuer elektrostatische haltevorrichtungen.
JPH04367247A (ja) * 1991-06-14 1992-12-18 Kyocera Corp セラミック製静電チャック
JPH05299494A (ja) * 1992-04-22 1993-11-12 Fujitsu Ltd 静電吸着装置
JPH07130826A (ja) * 1993-11-01 1995-05-19 Anelva Corp 静電チャック
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US6693789B2 (en) * 2000-04-05 2004-02-17 Sumitomo Osaka Cement Co., Ltd. Susceptor and manufacturing method thereof
US20030010292A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Electrostatic chuck with dielectric coating
JP2004319700A (ja) 2003-04-15 2004-11-11 Nhk Spring Co Ltd 静電チャック
JP4467453B2 (ja) * 2004-09-30 2010-05-26 日本碍子株式会社 セラミックス部材及びその製造方法
JP5084155B2 (ja) * 2005-03-11 2012-11-28 日本碍子株式会社 アルミナ焼結体及びその製造方法、並びに、このアルミナ焼結体を用いた静電チャック及びその製造方法
JP2008091353A (ja) * 2006-09-07 2008-04-17 Ngk Insulators Ltd 静電チャック
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
JP5201527B2 (ja) * 2008-03-28 2013-06-05 東京エレクトロン株式会社 静電チャック、及びその製造方法
US7929269B2 (en) * 2008-09-04 2011-04-19 Momentive Performance Materials Inc. Wafer processing apparatus having a tunable electrical resistivity
TW201209957A (en) * 2010-05-28 2012-03-01 Praxair Technology Inc Substrate supports for semiconductor applications
JP5618638B2 (ja) * 2010-06-07 2014-11-05 株式会社日立ハイテクノロジーズ プラズマ処理装置または試料載置台
JP5876992B2 (ja) * 2011-04-12 2016-03-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2012147931A1 (ja) * 2011-04-27 2012-11-01 住友大阪セメント株式会社 静電チャック装置
JP5957812B2 (ja) * 2011-06-21 2016-07-27 住友大阪セメント株式会社 静電チャック装置
US9916998B2 (en) * 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080062609A1 (en) * 2006-08-10 2008-03-13 Shinji Himori Electrostatic chuck device
US8284538B2 (en) * 2006-08-10 2012-10-09 Tokyo Electron Limited Electrostatic chuck device

Also Published As

Publication number Publication date
KR101613950B1 (ko) 2016-04-20
KR20150102669A (ko) 2015-09-07
TW201533795A (zh) 2015-09-01
JP6277015B2 (ja) 2018-02-07
JP2015162618A (ja) 2015-09-07
US20150248994A1 (en) 2015-09-03

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