JP6223668B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6223668B2 JP6223668B2 JP2012203935A JP2012203935A JP6223668B2 JP 6223668 B2 JP6223668 B2 JP 6223668B2 JP 2012203935 A JP2012203935 A JP 2012203935A JP 2012203935 A JP2012203935 A JP 2012203935A JP 6223668 B2 JP6223668 B2 JP 6223668B2
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- Prior art keywords
- film
- conductive film
- conductive
- transistor
- pair
- Prior art date
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- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
Description
図1に、本発明の一態様に係る半導体装置の、トランジスタの構造を例示する。図1(A)は、当該トランジスタのチャネル長方向における断面図の一例である。
本発明の一態様に係る半導体装置は、トランジスタが積層された構成を有していても良い。特に、図4(A)に示した構成を有するトランジスタを用い、第4の導電膜110または第4の導電膜111を、下層のトランジスタのゲート電極、ソース電極、またはドレイン電極として、機能させることで、コンタクト領域に起因する素子面積の増大を抑制して半導体装置の微細化を実現する、或いはトランジスタの作製工程数の削減を実現することができる。
本発明の一態様に係る半導体装置の一つである、インバータの構成例について説明する。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯情報端末、電子書籍、ビデオカメラ、デジタルスチルカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンター、プリンター複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図12に示す。
101e 端部
102 導電膜
102e 端部
103 半導体膜
104 導電膜
104e 端部
105 導電膜
105e 端部
106 絶縁膜
107 導電膜
107e 端部
108 開口部
109 開口部
110 導電膜
111 導電膜
112 半導体膜
113 半導体膜
114 Lov領域
115 Lov領域
116 Loff領域
117 Loff領域
120 絶縁膜
201 トランジスタ
202 トランジスタ
203 容量素子
204 トランジスタ
205 容量素子
206 トランジスタ
500 インバータ
501 トランジスタ
502 トランジスタ
503 トランジスタ
504 トランジスタ
505 トランジスタ
506 容量素子
507 配線
508 配線
509 配線
510 配線
511 配線
700 基板
701 絶縁膜
702 半導体膜
703 ゲート絶縁膜
704 不純物領域
705 マスク
706 開口部
707 導電膜
708 導電膜
709 不純物領域
710 チャネル形成領域
711 不純物領域
712 絶縁膜
713 絶縁膜
714 導電膜
715 導電膜
716 酸化物半導体膜
717 開口部
718 開口部
719 導電膜
720 導電膜
721 ゲート絶縁膜
722 導電膜
723 導電膜
750 基板
751 導電膜
752 導電膜
753 半導体膜
754 導電膜
755 導電膜
756 絶縁膜
757 導電膜
758 導電膜
760 基板
761 半導体膜
762 絶縁膜
763 導電膜
764 導電膜
765 導電膜
766 絶縁膜
771 導電膜
772 導電膜
773 半導体膜
774 導電膜
775 導電膜
776 絶縁膜
777 導電膜
780 導電膜
781 導電膜
782 絶縁膜
783 導電膜
5001 筐体
5002 筐体
5003 表示部
5004 表示部
5005 マイクロホン
5006 スピーカー
5007 操作キー
5008 スタイラス
5201 筐体
5202 表示部
5203 支持台
5401 筐体
5402 表示部
5403 キーボード
5404 ポインティングデバイス
5601 筐体
5602 筐体
5603 表示部
5604 表示部
5605 接続部
5606 操作キー
5801 筐体
5802 表示部
5803 音声入力部
5804 音声出力部
5805 操作キー
5806 受光部
Claims (7)
- 半導体膜と、
前記半導体膜と電気的に接続されている一対の第1導電膜と、
一対の前記第1導電膜とそれぞれ電気的に接続されている一対の第2導電膜と、
第3導電膜と、
前記半導体膜と前記第3導電膜との間の領域を有する絶縁膜と、を有し、
前記半導体膜は、一対の前記第1導電膜の一方と一対の前記第2導電膜の一方との間の領域を有し、
前記半導体膜は、一対の前記第1導電膜の他方と一対の前記第2導電膜の他方との間の領域を有し、
一対の前記第1導電膜は、前記半導体膜と一対の前記第1導電膜とが重なる領域において前記第3導電膜と重なる領域を有し、
一対の前記第2導電膜は、前記半導体膜と一対の前記第2導電膜とが重なる領域において前記第3導電膜と重ならない半導体装置。 - 半導体膜と、
前記半導体膜と電気的に接続されている一対の第1導電膜と、
一対の前記第1導電膜とそれぞれ電気的に接続されている一対の第2導電膜と、
第3導電膜と、
前記半導体膜と前記第3導電膜との間の領域を有する絶縁膜と、を有し、
前記半導体膜は、一対の前記第1導電膜の一方と一対の前記第2導電膜の一方との間の領域を有し、
前記半導体膜は、一対の前記第1導電膜の他方と一対の前記第2導電膜の他方との間の領域を有し、
一対の前記第2導電膜は、前記半導体膜の上方に位置し、
一対の前記第1導電膜は、前記半導体膜と一対の前記第1導電膜とが重なる領域において前記第3導電膜と重なる領域を有し、
一対の前記第2導電膜は、前記半導体膜と一対の前記第2導電膜とが重なる領域において前記第3導電膜と重ならない半導体装置。 - 請求項1または請求項2において、
チャネル長方向において、一対の前記第2導電膜の間隔は、一対の前記第1導電膜の間隔よりも長い半導体装置。 - 層上の半導体膜と、
前記半導体膜と電気的に接続されている一対の第1導電膜と、
一対の前記第1導電膜とそれぞれ電気的に接続されている一対の第2導電膜と、
第3導電膜と、
前記半導体膜と前記第3導電膜との間の領域を有する絶縁膜と、を有し、
前記半導体膜は、一対の前記第1導電膜の一方と一対の前記第2導電膜の一方との間の領域を有し、
前記半導体膜は、一対の前記第1導電膜の他方と一対の前記第2導電膜の他方との間の領域を有し、
前記層は、一対の第4導電膜と、一対の前記第4導電膜の間の領域を有する第2絶縁膜と、を有し、
一対の前記第4導電膜は、一対の前記第1導電膜とそれぞれ電気的に接続されており、
チャネル長方向において、一対の前記第2導電膜の間隔は、一対の前記第1導電膜の間隔よりも長い半導体装置。 - 層上の半導体膜と、
前記半導体膜と電気的に接続されている一対の第1導電膜と、
一対の前記第1導電膜とそれぞれ電気的に接続されている一対の第2導電膜と、
第3導電膜と、
前記半導体膜と前記第3導電膜との間の領域を有する絶縁膜と、を有し、
前記半導体膜は、一対の前記第1導電膜の一方と一対の前記第2導電膜の一方との間の領域を有し、
前記半導体膜は、一対の前記第1導電膜の他方と一対の前記第2導電膜の他方との間の領域を有し、
一対の前記第2導電膜は、前記半導体膜の上方に位置し、
前記層は、一対の第4導電膜と、一対の前記第4導電膜の間の領域を有する第2絶縁膜と、を有し、
一対の前記第4導電膜は、一対の前記第1導電膜とそれぞれ電気的に接続されており、
チャネル長方向において、一対の前記第2導電膜の間隔は、一対の前記第1導電膜の間隔よりも長い半導体装置。 - 請求項1乃至請求項5のいずれか1項において、
前記一対の第1導電膜の膜厚が、10nm以上300nm以下である半導体装置。 - 請求項1乃至請求項6のいずれか1項において、
前記半導体膜は、酸化物半導体を有する半導体装置。
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JP2021100127A (ja) | 2021-07-01 |
US8822989B2 (en) | 2014-09-02 |
JP2023104977A (ja) | 2023-07-28 |
TWI566399B (zh) | 2017-01-11 |
WO2013042562A1 (en) | 2013-03-28 |
JP2020074471A (ja) | 2020-05-14 |
US20140346508A1 (en) | 2014-11-27 |
JP2017228809A (ja) | 2017-12-28 |
JP7038238B2 (ja) | 2022-03-17 |
JP2019080071A (ja) | 2019-05-23 |
US20130075721A1 (en) | 2013-03-28 |
JP2013080915A (ja) | 2013-05-02 |
JP7285352B2 (ja) | 2023-06-01 |
US9159840B2 (en) | 2015-10-13 |
JP6460609B2 (ja) | 2019-01-30 |
TW201324770A (zh) | 2013-06-16 |
JP2022066445A (ja) | 2022-04-28 |
JP6656351B2 (ja) | 2020-03-04 |
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