JP6180471B2 - コアレスパッケージの両面ソルダーレジスト層、及び埋込インターコネクトブリッジを有するパッケージ、並びにそれらの製造方法 - Google Patents
コアレスパッケージの両面ソルダーレジスト層、及び埋込インターコネクトブリッジを有するパッケージ、並びにそれらの製造方法 Download PDFInfo
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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Description
Claims (20)
- 少なくとも1つの絶縁層と、少なくとも1つのビアと、少なくとも1つの導電層とを有するビルドアップ構造と、
前記ビルドアップ構造の第1の面上の、第1の複数のコンタクトパッドと、
前記第1の面の反対側の前記ビルドアップ構造の第2の面上の、第2の複数のコンタクトパッドと、
前記第1の面上の感光性の第1のソルダーレジスト層と、
前記第2の面上の第2のソルダーレジスト層と
を有し、
前記第1及び第2のソルダーレジスト層は、それぞれ、前記ビルドアップ構造の前記第1及び第2の面を覆っており、前記第1のソルダーレジスト層は、前記第1の複数のコンタクトパッドと前記少なくとも1つの絶縁層のうちの一番下の絶縁層との間の隔たり全体に配置され、前記一番下の絶縁層が、前記第1のソルダーレジスト層の頂面全体と接触している、
パッケージ基板。 - 前記ビルドアップ構造は補強コアを含んでいない、請求項1に記載のパッケージ基板。
- 前記第1のソルダーレジスト層は、前記第1の複数のコンタクトパッドの側壁上に配置されている、請求項1に記載のパッケージ基板。
- 前記第1のソルダーレジスト層は、前記第1の複数のコンタクトパッドの内側の面上に配置されている、請求項1に記載のパッケージ基板。
- 前記第1のソルダーレジスト層は、前記第1の複数のコンタクトパッドの外側の面上には配置されていない、請求項1に記載のパッケージ基板。
- 前記第1の複数のコンタクトパッドは、第1の幅広コンタクトパッドと第1の幅狭コンタクトパッドとを有し、前記第1の幅広コンタクトパッドは、前記第1の幅狭コンタクトパッドより、大きいピッチを有する、請求項1に記載のパッケージ基板。
- 当該パッケージ基板内に埋め込まれたデバイス、を更に有する請求項1に記載のパッケージ基板。
- 前記ビルドアップ構造内に配置された補強コア、を更に有する請求項7に記載のパッケージ基板。
- 前記第2の複数のコンタクトパッドは、第2の幅広コンタクトパッドと第2の幅狭コンタクトパッドとを有し、前記第2の幅広コンタクトパッドは、前記第2の幅狭コンタクトパッドより、大きいピッチを有する、請求項7に記載のパッケージ基板。
- 前記第2のソルダーレジスト層は、前記第2の複数のコンタクトパッドの一部に横方向で直に隣接している、請求項1に記載のパッケージ基板。
- 前記第2のソルダーレジスト層は、前記少なくとも1つの絶縁層のうちの一番上の絶縁層の露出された全ての頂面の上に配置されている、請求項1に記載のパッケージ基板。
- パッケージ基板を形成する方法であって、
仮基板の頂面の上に複数の多層構造を形成し、
前記仮基板と前記複数の多層構造との露出表面の上に感光性の第1のソルダーレジスト層を形成し、
前記第1のソルダーレジスト層の上に、少なくとも1つの絶縁層と、複数のビアと、少なくとも1つの導電層とを有するビルドアップ構造を形成し、一番下の絶縁層が、前記第1のソルダーレジスト層の頂面全体と接触し、頂部導電層が、一番上の絶縁層の頂面の上に第2の複数のコンタクトパッドを形成し、
前記第2の複数のコンタクトパッドの少なくとも一部を露出させて、前記一番上の絶縁層の頂面の上に第2のソルダーレジスト層を形成し、且つ
前記仮基板と前記複数の多層構造の各多層構造の一部とを除去し、各多層構造の残存部分が第1の複数のコンタクトパッドを形成する、
ことを有する方法。 - 前記ビルドアップ構造を形成することはセミアディティブプロセスを有する、請求項12に記載の方法。
- 前記ビルドアップ構造を形成することは更に、前記少なくとも1つの絶縁層及び前記少なくとも1つの導電層の中に、デバイスを、該デバイスが前記ビルドアップ構造の中に埋め込まれるように配置することを有する、請求項12に記載の方法。
- 前記ビルドアップ構造を形成することは更に、前記第1のソルダーレジスト層の一部を貫いてエッチングして前記複数の多層構造を露出させることを有する、請求項12に記載の方法。
- 前記第2の複数のコンタクトパッド及び前記第2のソルダーレジスト層の上に第1の保護層を形成し、且つ前記第1の複数のコンタクトパッドの上に、第1の厚さを有する底部表面仕上げ材を堆積し、
前記第1の保護層を除去して、前記第2の複数のコンタクトパッドを露出させ、
前記第1の複数のコンタクトパッド及び前記第1のソルダーレジスト層の上に第2の保護層を形成し、且つ前記第2の複数のコンタクトパッドの上に、前記第1の厚さとは異なる第2の厚さを有する頂部表面仕上げ材を堆積し、且つ
前記第2の保護層を除去する、
ことを更に有する請求項12に記載の方法。 - 前記底部表面仕上げ材及び前記頂部表面仕上げ材の少なくとも一方は、それぞれ、前記第1のソルダーレジスト層及び前記第2のソルダーレジスト層の頂面の上方まで延在する、請求項16に記載の方法。
- 前記底部表面仕上げ材及び前記頂部表面仕上げ材を堆積することは、第1の導電材料と該第1の導電材料の直上の第2の導電材料とを堆積することを有する、請求項16に記載の方法。
- 前記第1及び第2の導電材料を堆積することは、無電解めっきすることを有する、請求項18に記載の方法。
- 前記第2の厚さは、前記第1の厚さの3倍から4倍の大きさの厚さである、請求項16に記載の方法。
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US14/463,285 | 2014-08-19 | ||
US14/463,285 US9704735B2 (en) | 2014-08-19 | 2014-08-19 | Dual side solder resist layers for coreless packages and packages with an embedded interconnect bridge and their methods of fabrication |
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JP2016046519A JP2016046519A (ja) | 2016-04-04 |
JP6180471B2 true JP6180471B2 (ja) | 2017-08-16 |
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JP (1) | JP6180471B2 (ja) |
KR (1) | KR101681050B1 (ja) |
CN (1) | CN105374784A (ja) |
TW (1) | TWI590405B (ja) |
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WO2017171787A1 (en) * | 2016-03-31 | 2017-10-05 | Intel Corporation | Methods of promoting adhesion between dielectric and conductive materials in packaging structures |
US10049996B2 (en) * | 2016-04-01 | 2018-08-14 | Intel Corporation | Surface finishes for high density interconnect architectures |
TWI563602B (en) * | 2016-04-15 | 2016-12-21 | Phoenix Pioneer Technology Co Ltd | Method of fabricating a package substrate |
US20200328143A1 (en) * | 2016-04-29 | 2020-10-15 | Uniqarta, Inc. | Connecting electronic components to substrates |
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