JP2017535054A - 裏面受動構成要素を有する集積回路ダイ、およびそれに関連する方法 - Google Patents
裏面受動構成要素を有する集積回路ダイ、およびそれに関連する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 61
- 239000000758 substrate Substances 0.000 claims abstract description 183
- 239000004065 semiconductor Substances 0.000 claims abstract description 148
- 239000003990 capacitor Substances 0.000 claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 claims description 100
- 239000002184 metal Substances 0.000 claims description 100
- 239000012777 electrically insulating material Substances 0.000 claims description 55
- 239000010409 thin film Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 description 70
- 239000000463 material Substances 0.000 description 61
- 239000010949 copper Substances 0.000 description 42
- 239000010931 gold Substances 0.000 description 33
- 230000008569 process Effects 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000004891 communication Methods 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000002161 passivation Methods 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 229910020658 PbSn Inorganic materials 0.000 description 3
- 101150071746 Pbsn gene Proteins 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910007637 SnAg Inorganic materials 0.000 description 3
- 229910008433 SnCU Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910021654 trace metal Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000011188 CEM-1 Substances 0.000 description 1
- 239000011190 CEM-3 Substances 0.000 description 1
- 101100257127 Caenorhabditis elegans sma-2 gene Proteins 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
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- H01L23/5226—Via connections in a multilevel interconnection structure
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- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
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Abstract
Description
Claims (25)
- 半導体基板と、
前記半導体基板の第1の面に配設された複数の能動構成要素と、
前記半導体基板の第2の面に配設された複数の受動構成要素と
を備え、前記第2の面が、前記第1の面とは反対側に配設され、前記複数の受動構成要素が、コンデンサおよび抵抗器からなる群から選択される集積回路(IC)ダイ。 - 前記半導体基板内に配設され、前記複数の受動構成要素の1つまたは複数と前記半導体基板の前記第1の面との間で電気信号をルーティングする複数の基板貫通バイア(TSV)をさらに備える、請求項1に記載のICダイ。
- 前記半導体基板の前記第1の面に配設され、前記複数の能動構成要素をカプセル化する電気絶縁材料の1つまたは複数の層と、
前記電気絶縁材料の前記1つまたは複数の層に配設された複数のダイレベル相互接続部と、
電気絶縁材料の前記1つまたは複数の層に配設された電気ルーティングフィーチャと
をさらに備え、前記電気ルーティングフィーチャが、前記複数のダイレベル相互接続部と前記複数の能動構成要素とを電気的に結合する請求項1または2に記載のICダイ。 - 電気絶縁材料の前記1つまたは複数の層が、電気絶縁材料の1つまたは複数の第1の層であり、前記電気ルーティングフィーチャが、第1の電気ルーティングフィーチャであり、前記ICダイが、
前記半導体基板の前記第2の面に配設された1つまたは複数の再分散層(RDL)をさらに備え、前記1つまたは複数の再分散層が、
前記半導体基板の前記第2の面に配設され、前記複数の受動構成要素をカプセル化する電気絶縁材料の1つまたは複数の第2の層と、
前記電気絶縁材料の前記1つまたは複数の第2の層に配設された複数の入出力(I/O)相互接続構造と、
電気絶縁材料の前記1つまたは複数の第2の層に配設された第2の電気ルーティングフィーチャと
を含み、前記第2の電気ルーティングフィーチャが、前記複数のI/O相互接続構造と、前記複数の受動構成要素とを電気的に結合する請求項3に記載のICダイ。 - 前記複数の受動構成要素が、複数の金属−絶縁体−金属(MIM)コンデンサを備え、前記複数のMIMコンデンサがそれぞれ、第1の金属層と、前記第1の金属層上に配設されたコンデンサ誘電体層と、前記コンデンサ誘電体層上に配設された第2の金属層とを含む、請求項1から4のいずれか一項に記載のICダイ。
- 前記複数の受動構成要素が複数のトレンチコンデンサを備え、前記複数のトレンチコンデンサがそれぞれ、前記半導体基板に形成された1つまたは複数のトレンチに配設された第1の金属層と、前記第1の金属層上に配設されたコンデンサ誘電体層と、前記コンデンサ誘電体層上に配設された第2の金属層とを含む、請求項1から4のいずれか一項に記載のICダイ。
- 前記第1および第2の金属層がそれぞれ、前記半導体基板の前記第2の面に配設された1つまたは複数の再分散層(RDL)に配設された第1および第2の相互接続構造と電気的に結合された、請求項5または6に記載のICダイ。
- 前記第1の金属層が、前記半導体基板に配設されたTSVと電気的に結合され、前記TSVが、前記半導体基板の前記第1の面と前記半導体基板の前記第2の面とを電気的に結合する、請求項5または6に記載のICダイ。
- 前記第2の金属層が、前記ICダイの電気ルーティング構造と電気的に結合され、前記電気ルーティング構造が、
前記半導体基板内に配設されたさらなるTSVであって、前記半導体基板の前記第1の面と前記半導体基板の前記第2の面とを電気的に結合するさらなるTSV、または
前記半導体基板の前記第2の面に配設された1つまたは複数の再分散層(RDL)に配設された相互接続構造からなる群から選択される、請求項8に記載のICダイ。 - 前記複数の受動構成要素が、複数の薄膜抵抗器を備え、各薄膜抵抗器が、第1の端子および第2の端子を含む、請求項1から4のいずれか一項に記載のICダイ。
- 前記第1および第2の端子がそれぞれ、前記半導体基板の前記第2の面に配設された1つまたは複数の再分散層(RDL)に配設された第1および第2の相互接続構造と電気的に結合される、請求項10に記載のICダイ。
- 前記第1の端子が、前記半導体基板に配設されたTSVと電気的に結合され、前記TSVが、前記半導体基板の前記第1の面と前記半導体基板の前記第2の面とを電気的に結合する、請求項10または11に記載のICダイ。
- 前記第2の端子が、前記ICダイの電気ルーティング構造と電気的に結合され、前記電気ルーティング構造が、
前記半導体基板内に配設されたさらなるTSVであって、前記半導体基板の前記第1の面を前記半導体基板の前記第2の面と電気的に結合するさらなるTSV、または
前記半導体基板の前記第2の面に配設された1つまたは複数の再分散層(RDL)に配設された相互接続構造からなる群から選択される、請求項12に記載のICダイ。 - 前記複数の能動構成要素が複数のトランジスタを含む、請求項1から13のいずれか一項に記載のICダイ。
- 前記半導体基板がシリコンウェハを備える、請求項1から14のいずれか一項に記載のICダイ。
- 集積回路(IC)ダイアセンブリを形成する方法であって、
半導体基板を提供するステップと、
前記半導体基板の第1の面に複数の能動構成要素を形成するステップと、
前記半導体基板の第2の面に複数の受動構成要素を形成するステップと
を含み、前記半導体基板の前記第2の面が、前記半導体基板の前記第1の面と反対側に配設される方法。 - 前記複数の受動構成要素が、
金属−絶縁体−金属(MIM)コンデンサであって、前記複数の受動構成要素を形成するステップが、第1の金属層を前記半導体基板の前記第2の面に堆積するステップと、コンデンサ誘電体層を前記第1の金属層に堆積するステップと、第2の金属層を前記コンデンサ誘電体層に堆積するステップとを含む、金属−絶縁体−金属(MIM)コンデンサと、
トレンチコンデンサであって、前記複数の受動構成要素を形成するステップが、1つまたは複数のトレンチを、前記半導体基板の前記第2の面の表面に形成するステップと、前記1つまたは複数のトレンチに第1の金属層を堆積するステップと、前記第1の金属層にコンデンサ誘電体層を堆積するステップと、前記コンデンサ誘電体層に第2の金属層を堆積するステップとを含む、トレンチコンデンサとからなる群から選択される、請求項16に記載の方法。 - 前記複数の受動構成要素に1つまたは複数の再分散層(RDL)を形成するステップをさらに含み、前記1つまたは複数のRDLが、複数の相互接続構造を含み、前記1つまたは複数のRDLが、前記複数の相互接続構造の第1および第2の相互接続構造と前記第1および第2の金属層とをそれぞれ電気的に結合するように形成される、請求項17に記載の方法。
- 前記半導体基板が、配設されたTSVを含み、前記TSVが、前記半導体基板の前記第1の面と、前記半導体基板の前記第2の面とを電気的に結合し、前記第1の金属層が、前記TSVと電気的に結合するように形成される、請求項17または18に記載の方法。
- 前記第2の金属層が、前記ICダイアセンブリの電気ルーティング構造と電気的に結合するように形成され、前記電気ルーティング構造が、
前記半導体基板内に形成されたさらなるTSVであって、前記半導体基板の前記第1の面と前記半導体基板の前記第2の面とを電気的に結合するさらなるTSV、または
相互接続構造が形成されている前記半導体基板の前記第2の面に形成された1つまたは複数の再分散層(RDL)からなる群から選択される、請求項17から19のいずれか一項に記載の方法。 - 電気絶縁材料の1つまたは複数の層を、前記複数の能動構成要素上に堆積するステップと、
電気絶縁材料の前記1つまたは複数の層に電気ルーティングフィーチャを形成するステップと、
前記電気絶縁材料の前記1つまたは複数の層の表面に、複数のダイレベル相互接続構造を形成するステップと
をさらに含み、前記複数のダイレベル相互接続構造が、前記電気ルーティングフィーチャを介して前記複数の能動構成要素と電気的に結合される請求項16から20のいずれか一項に記載の方法。 - 前記電気絶縁材料が第1の電気絶縁材料であり、前記電気ルーティングフィーチャが第1の電気ルーティングフィーチャであり、方法が、
第2の電気絶縁材料の1つまたは複数の層を前記複数の受動構成要素上に堆積するステップと、
第2の電気絶縁材料の前記1つまたは複数の層に電気ルーティングフィーチャを形成するステップと、
前記第2の電気絶縁材料の前記1つまたは複数の層に複数の入出力(I/O)相互接続構造を形成するステップと
をさらに含み、前記複数のI/O相互接続構造が、前記電気ルーティングフィーチャを介して前記複数の受動構成要素のうちの1つまたは複数と電気的に結合される請求項21に記載の方法。 - 半導体基板の第1の面に配設された複数の能動構成要素と、
前記半導体基板の前記第1の面とは反対側に配設された前記半導体基板の第2の面に配設された複数の受動構成要素と、
前記複数の能動構成要素と電気的に結合された第1の複数の入出力(I/O)相互接続構造と、
前記複数の受動構成要素と電気的に結合された第2の複数のI/O相互接続構造と
を有する集積回路(IC)ダイと、
前記ICダイと電気的に結合されたパッケージ基板と
を備え、前記パッケージ基板が、前記ICダイの電気信号をルーティングする集積回路(IC)パッケージアセンブリ。 - 前記ICダイが第1のICダイであり、前記半導体基板の前記第2の面に配設された第2のICダイをさらに備え、前記第2のICダイが、前記第2の複数のI/O相互接続構造と結合された第3の複数のI/O相互接続構造を含んで、前記第1のICダイと前記第2のICダイとの間で電気信号をルーティングする、請求項23に記載のICパッケージアセンブリ。
- 前記複数の受動構成要素が、
金属−絶縁体−金属(MIM)コンデンサと、
トレンチコンデンサと、
薄膜抵抗器とからなる群から選択される、請求項23または24に記載のICパッケージアセンブリ。
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Also Published As
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CN106796929A (zh) | 2017-05-31 |
TWI673843B (zh) | 2019-10-01 |
WO2016048367A1 (en) | 2016-03-31 |
US10790263B2 (en) | 2020-09-29 |
TW201624650A (zh) | 2016-07-01 |
EP3198637B1 (en) | 2019-06-26 |
EP3198637A4 (en) | 2018-05-02 |
US10224309B2 (en) | 2019-03-05 |
MY193320A (en) | 2022-10-04 |
KR20170066321A (ko) | 2017-06-14 |
US20190198481A1 (en) | 2019-06-27 |
EP3198637A1 (en) | 2017-08-02 |
US20170250159A1 (en) | 2017-08-31 |
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