JP6173781B2 - 配線基板及び配線基板の製造方法 - Google Patents
配線基板及び配線基板の製造方法 Download PDFInfo
- Publication number
- JP6173781B2 JP6173781B2 JP2013121871A JP2013121871A JP6173781B2 JP 6173781 B2 JP6173781 B2 JP 6173781B2 JP 2013121871 A JP2013121871 A JP 2013121871A JP 2013121871 A JP2013121871 A JP 2013121871A JP 6173781 B2 JP6173781 B2 JP 6173781B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- wiring
- layer
- adhesive
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10636—Leadless chip, e.g. chip capacitor or resistor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0191—Using tape or non-metallic foil in a process, e.g. during filling of a hole with conductive paste
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013121871A JP6173781B2 (ja) | 2013-06-10 | 2013-06-10 | 配線基板及び配線基板の製造方法 |
| US14/291,367 US9232657B2 (en) | 2013-06-10 | 2014-05-30 | Wiring substrate and manufacturing method of wiring substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013121871A JP6173781B2 (ja) | 2013-06-10 | 2013-06-10 | 配線基板及び配線基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014239186A JP2014239186A (ja) | 2014-12-18 |
| JP2014239186A5 JP2014239186A5 (enExample) | 2016-02-18 |
| JP6173781B2 true JP6173781B2 (ja) | 2017-08-02 |
Family
ID=52004499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013121871A Active JP6173781B2 (ja) | 2013-06-10 | 2013-06-10 | 配線基板及び配線基板の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9232657B2 (enExample) |
| JP (1) | JP6173781B2 (enExample) |
Families Citing this family (47)
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| US9293426B2 (en) | 2012-09-28 | 2016-03-22 | Intel Corporation | Land side and die side cavities to reduce package Z-height |
| JP6393566B2 (ja) * | 2014-09-17 | 2018-09-19 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
| KR102037264B1 (ko) * | 2014-12-15 | 2019-10-29 | 삼성전기주식회사 | 기판 내장용 소자, 그 제조 방법 및 소자 내장 인쇄회로기판 |
| JP6373219B2 (ja) * | 2015-03-31 | 2018-08-15 | 太陽誘電株式会社 | 部品内蔵基板および半導体モジュール |
| JP2016207940A (ja) * | 2015-04-27 | 2016-12-08 | イビデン株式会社 | 電子部品内蔵配線板及びその製造方法 |
| JP6462480B2 (ja) * | 2015-04-28 | 2019-01-30 | 新光電気工業株式会社 | 配線基板及び配線基板の製造方法 |
| US10199337B2 (en) * | 2015-05-11 | 2019-02-05 | Samsung Electro-Mechanics Co., Ltd. | Electronic component package and method of manufacturing the same |
| US9984979B2 (en) * | 2015-05-11 | 2018-05-29 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package and method of manufacturing the same |
| US10276541B2 (en) * | 2015-06-30 | 2019-04-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D package structure and methods of forming same |
| US9748227B2 (en) * | 2015-07-15 | 2017-08-29 | Apple Inc. | Dual-sided silicon integrated passive devices |
| US10566289B2 (en) * | 2015-10-13 | 2020-02-18 | Samsung Electronics Co., Ltd. | Fan-out semiconductor package and manufacturing method thereof |
| KR20170043427A (ko) * | 2015-10-13 | 2017-04-21 | 삼성전기주식회사 | 전자부품 패키지 및 그 제조방법 |
| CN107295746B (zh) * | 2016-03-31 | 2021-06-15 | 奥特斯(中国)有限公司 | 器件载体及其制造方法 |
| CN107295747B (zh) * | 2016-03-31 | 2021-03-12 | 奥特斯(中国)有限公司 | 器件载体及制造器件载体的方法 |
| JP2017204511A (ja) * | 2016-05-10 | 2017-11-16 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び、電子機器 |
| US9870997B2 (en) * | 2016-05-24 | 2018-01-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated fan-out package and method of fabricating the same |
| KR101952862B1 (ko) * | 2016-08-30 | 2019-02-27 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101982044B1 (ko) * | 2016-08-31 | 2019-05-24 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| US10600679B2 (en) | 2016-11-17 | 2020-03-24 | Samsung Electronics Co., Ltd. | Fan-out semiconductor package |
| KR101872619B1 (ko) * | 2016-11-17 | 2018-06-28 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101983186B1 (ko) | 2016-12-16 | 2019-05-28 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101963282B1 (ko) * | 2016-12-16 | 2019-03-28 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101983188B1 (ko) * | 2016-12-22 | 2019-05-28 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| US10510709B2 (en) * | 2017-04-20 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semicondcutor package and manufacturing method thereof |
| KR102425754B1 (ko) * | 2017-05-24 | 2022-07-28 | 삼성전기주식회사 | 전자부품 내장 인쇄회로기판 |
| US10497846B2 (en) * | 2017-07-11 | 2019-12-03 | Lg Innotek Co., Ltd. | Light emitting device package |
| KR101942741B1 (ko) * | 2017-10-20 | 2019-01-28 | 삼성전기 주식회사 | 반도체 패키지 |
| US10515827B2 (en) * | 2017-10-31 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming chip package with recessed interposer substrate |
| US10431549B2 (en) * | 2018-01-10 | 2019-10-01 | Powertech Technology Inc. | Semiconductor package and manufacturing method thereof |
| US11276618B2 (en) * | 2018-04-30 | 2022-03-15 | Intel Corporation | Bi-layer prepreg for reduced dielectric thickness |
| US10790162B2 (en) | 2018-09-27 | 2020-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit package and method |
| DE102019117844A1 (de) | 2018-09-27 | 2020-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrierte-schaltung-package und verfahren |
| US10869385B2 (en) * | 2018-10-30 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, circuit board structure and method of fabricating the same |
| JP2020150146A (ja) * | 2019-03-14 | 2020-09-17 | キオクシア株式会社 | 半導体装置 |
| JP7371882B2 (ja) * | 2019-04-12 | 2023-10-31 | 株式会社ライジングテクノロジーズ | 電子回路装置および電子回路装置の製造方法 |
| US12142567B2 (en) * | 2019-04-17 | 2024-11-12 | Intel Corporation | Coreless architecture and processing strategy for EMIB-based substrates with high accuracy and high density |
| US10903169B2 (en) | 2019-04-30 | 2021-01-26 | Advanced Semiconductor Engineering, Inc. | Conductive structure and wiring structure including the same |
| WO2020250795A1 (ja) | 2019-06-10 | 2020-12-17 | 株式会社ライジングテクノロジーズ | 電子回路装置 |
| US11521958B2 (en) | 2019-11-05 | 2022-12-06 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package with conductive pillars and reinforcing and encapsulating layers |
| JP7010314B2 (ja) * | 2020-02-03 | 2022-01-26 | 大日本印刷株式会社 | 貫通電極基板 |
| TWI765238B (zh) * | 2020-03-20 | 2022-05-21 | 點序科技股份有限公司 | 印刷電路板的設計方法 |
| US11342272B2 (en) * | 2020-06-11 | 2022-05-24 | Advanced Semiconductor Engineering, Inc. | Substrate structures, and methods for forming the same and semiconductor package structures |
| US20220069489A1 (en) * | 2020-08-28 | 2022-03-03 | Unimicron Technology Corp. | Circuit board structure and manufacturing method thereof |
| KR20220042632A (ko) * | 2020-09-28 | 2022-04-05 | 삼성전기주식회사 | 인쇄회로기판 |
| KR20220093507A (ko) * | 2020-12-28 | 2022-07-05 | 삼성전기주식회사 | 패키지 내장기판 |
| KR20220140090A (ko) * | 2021-04-08 | 2022-10-18 | 삼성전자주식회사 | 반도체 패키지 |
| JP7563630B2 (ja) * | 2022-07-20 | 2024-10-08 | 株式会社村田製作所 | 基板 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3672169B2 (ja) * | 1999-03-05 | 2005-07-13 | 日本特殊陶業株式会社 | コンデンサ、コア基板本体の製造方法、及び、コンデンサ内蔵コア基板の製造方法 |
| JP5395360B2 (ja) * | 2008-02-25 | 2014-01-22 | 新光電気工業株式会社 | 電子部品内蔵基板の製造方法 |
| US20100059876A1 (en) * | 2008-09-05 | 2010-03-11 | Shinko Electric Industries Co., Ltd. | Electronic component package and method of manufacturing the same |
| US8299366B2 (en) * | 2009-05-29 | 2012-10-30 | Ibiden Co., Ltd. | Wiring board and method for manufacturing the same |
| JP2011210892A (ja) * | 2010-03-29 | 2011-10-20 | Ngk Spark Plug Co Ltd | 配線基板の製造方法 |
| JP5001395B2 (ja) * | 2010-03-31 | 2012-08-15 | イビデン株式会社 | 配線板及び配線板の製造方法 |
| KR101204233B1 (ko) * | 2010-12-22 | 2012-11-26 | 삼성전기주식회사 | 전자부품 내장형 인쇄회로기판 및 그 제조방법 |
| JP2013080846A (ja) * | 2011-10-04 | 2013-05-02 | Ibiden Co Ltd | 配線板及びその製造方法 |
-
2013
- 2013-06-10 JP JP2013121871A patent/JP6173781B2/ja active Active
-
2014
- 2014-05-30 US US14/291,367 patent/US9232657B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014239186A (ja) | 2014-12-18 |
| US9232657B2 (en) | 2016-01-05 |
| US20140360765A1 (en) | 2014-12-11 |
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