JP6143406B2 - 半導体基板、半導体基板の製造方法、および電子デバイス - Google Patents
半導体基板、半導体基板の製造方法、および電子デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 533
- 239000000758 substrate Substances 0.000 title claims description 105
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 239000007789 gas Substances 0.000 claims description 62
- 239000012535 impurity Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 52
- 125000004429 atom Chemical group 0.000 claims description 39
- 238000006243 chemical reaction Methods 0.000 claims description 30
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- 239000000463 material Substances 0.000 claims description 19
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 16
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 230000005264 electron capture Effects 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 150000008282 halocarbons Chemical class 0.000 claims description 6
- 239000003574 free electron Substances 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 23
- 230000004888 barrier function Effects 0.000 description 22
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 10
- 229910021478 group 5 element Inorganic materials 0.000 description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
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- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 125000006414 CCl Chemical group ClC* 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
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- 230000001771 impaired effect Effects 0.000 description 1
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- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Description
(特許文献1)特開2008−60554号公報
図2に示す半導体基板200におけるコンタクト層249からコンタクト層269までの半導体層を除いた各半導体層を有する半導体基板を実験例1として作成した。第1半導体210として、GaAs単結晶基板を用いた。バッファ層220としてI型GaAsを形成し、キャリアトラップ層232として酸素をドープしたI型AlGaAsを形成した。
実験例2として、空乏化半導体234に相当する半導体層をキャリア型がN型の低濃度不純物層とし、その他の半導体層については実験例1と同じものを作成した。実験例2では空乏化半導体234に相当する半導体層が低濃度N型層なので、作成した半導体基板は空乏化領域を有しない。
キャリアトラップ層232の膜厚を、20nm、100nmおよび150nmと変化させ、キャリアトラップ層232の酸素濃度を7×1019cm−3、空乏化半導体234の膜厚を300nmとした点を除き、他の構成が実験例1の場合と同じ半導体基板を作成した。得られた半導体基板の耐圧をキャリアトラップ層232の膜厚との関係として図6に示す。キャリアトラップ層232の厚さが大きいほど耐圧が高くなることが分かる。特にキャリアトラップ層232の厚さが100nm以上において顕著な耐圧の向上が観察された。
図2に示す半導体基板200を作成した。第1半導体210として、GaAs単結晶基板を用いた。バッファ層220としてI型GaAsを、キャリアトラップ層232として酸素をドープしたI型AlGaAsを作成した。空乏化半導体234として、3族原料に対する5族原料のモル供給比を調整することにより低濃度のP型となるようにしたGaAsおよびAlGaAsを交互に5組だけ積層した半導体層を作成した。キャリア供給半導体242および246としてN型AlGaAsを、キャリア移動層244としてI型InGaAsを、バリア形成半導体248としてI型AlGaAsを形成した。
キャリアトラップ層232の膜厚を100nm、キャリアトラップ層232の酸素濃度を3×1019cm−3、空乏化半導体234の膜厚を950nm、400nm、および540nmとした3つの半導体基板を作成した。他の構成は実験例4の場合と同じである。得られた半導体基板の耐圧を空乏化半導体234の膜厚との関係として図8に示す。空乏化半導体234の膜厚が大きいほど耐圧が高くなることが分かる。
Claims (9)
- 3−5族化合物半導体を含み、基板として機能する第1半導体上に、電子捕獲中心または正孔捕獲中心を有するキャリアトラップ層を形成する段階と、
前記キャリアトラップ層上に、自由電子または自由正孔が移動し、電界効果トランジスタのチャネルとして機能する第2半導体をエピタキシャル成長させる段階と、
前記第2半導体上に、N型半導体、P型半導体およびN型半導体をこの順にエピタキシャル成長させる、またはP型半導体、N型半導体およびP型半導体をこの順にエピタキシャル成長させることにより、N型半導体/P型半導体/N型半導体で表される積層体、またはP型半導体/N型半導体/P型半導体で表される積層体を含み、ヘテロ接合バイポーラトランジスタのコレクタ、ベースおよびエミッタとして機能する第3半導体を形成する段階と、を備え、
前記キャリアトラップ層を形成する段階の前に、
反応容器の内部に、前記第1半導体を少なくともその表面に有する基板を設置する段階と、
前記基板を設置する段階の後に、前記反応容器の内部にアルシンおよび水素を含むガスを導入する段階と、
前記ガスの雰囲気中で、前記第1半導体を加熱する段階と
を備え、
前記第3半導体が、高濃度にドープされたシリコンを含み、
前記キャリアトラップ層が、1.8×1019[cm−3]以上、1×1020[cm−3]以下の濃度の酸素原子を含み、
前記ガスが、アルシン、水素、およびP型の伝導型を示す不純物原子を構成要素として有する単体または化合物を含むP型不純物ガスを含む
半導体基板の製造方法。 - 前記P型不純物ガスが、ハロゲン化炭化水素ガスを含む
請求項1に記載の半導体基板の製造方法。 - 前記ハロゲン化炭化水素ガスが、
CHnX(4−n)
(ただし、XはCl、BrおよびIからなる群から選択されるハロゲン原子であり、nは、0≦n≦3の条件を満たす整数であり、0≦n≦2の場合、複数のXは互いに同一の原子でも異なった原子でもよい。)である
請求項2に記載の半導体基板の製造方法。 - 前記第3半導体が、バイポーラトランジスタのベースとして機能する半導体層を有し、
前記P型不純物ガスが、前記ベースとして機能する半導体層の製造において導入されるドーパントを含むガスと同じ種類のガスである
請求項1から請求項3の何れか一項に記載の半導体基板の製造方法。 - 前記キャリアトラップ層上に、3族原料に対する5族原料のモル供給比を調整することによりアクセプタの濃度を制御して、空乏化領域を含む空乏化半導体を形成する段階をさらに備える
請求項1から請求項4の何れか一項に記載の半導体基板の製造方法。 - 前記ガスが、1ppb以下のGeH4を含むアルシン原料ガスを含む
請求項1から請求項5の何れか一項に記載の半導体基板の製造方法。 - 前記第2半導体にキャリアを供給するための層をエピタキシャル成長させる段階において、N型の伝導型を示す不純物原子を含む化合物としてシランまたはジシランを導入して、前記キャリアを供給するための層をエピタキシャル成長させ、
前記第3半導体を形成する段階において、N型の伝導型を示す不純物原子を含む化合物としてシランまたはジシランを導入して、前記第3半導体に含まれる前記N型半導体をエピタキシャル成長させる
請求項1から請求項6の何れか一項に記載の半導体基板の製造方法。 - 前記第2半導体上に、前記第2半導体内で移動するキャリアとは反対の伝導型のキャリアが移動するチャネルとして機能する第4半導体をエピタキシャル成長させる段階をさらに備える
請求項1から請求項7の何れか一項に記載の半導体基板の製造方法。 - 前記第3半導体を形成する段階の後、前記第2半導体および前記第3半導体が形成された前記半導体基板を前記反応容器から取り出す段階をさらに備え、
前記取り出す段階、前記基板を設置する段階、前記ガスを導入する段階、前記加熱する段階、前記キャリアトラップ層を形成する段階、前記第2半導体をエピタキシャル成長する段階、および前記第3半導体を形成する段階を繰り返す
請求項1から請求項8の何れか一項に記載の半導体基板の製造方法。
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