JP6141144B2 - 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム - Google Patents

基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム Download PDF

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JP6141144B2
JP6141144B2 JP2013170120A JP2013170120A JP6141144B2 JP 6141144 B2 JP6141144 B2 JP 6141144B2 JP 2013170120 A JP2013170120 A JP 2013170120A JP 2013170120 A JP2013170120 A JP 2013170120A JP 6141144 B2 JP6141144 B2 JP 6141144B2
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polymer
substrate
wafer
block copolymer
heating
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Japanese (ja)
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JP2014087781A5 (enExample
JP2014087781A (ja
Inventor
村松 誠
誠 村松
北野 高広
高広 北野
忠利 冨田
忠利 冨田
啓士 田内
啓士 田内
和利 矢野
和利 矢野
賢一 重冨
賢一 重冨
聡大 豊澤
聡大 豊澤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2013170120A priority Critical patent/JP6141144B2/ja
Priority to TW102134810A priority patent/TWI569307B/zh
Priority to KR1020157008388A priority patent/KR101967503B1/ko
Priority to US14/430,574 priority patent/US20150228512A1/en
Priority to PCT/JP2013/076511 priority patent/WO2014054570A1/ja
Publication of JP2014087781A publication Critical patent/JP2014087781A/ja
Publication of JP2014087781A5 publication Critical patent/JP2014087781A5/ja
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/14Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating or cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • H01L21/31138Etching organic layers by chemical means by dry-etching
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    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67023Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
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    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
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    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Programmable Controllers (AREA)
  • Materials For Photolithography (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
JP2013170120A 2012-10-02 2013-08-20 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム Active JP6141144B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013170120A JP6141144B2 (ja) 2012-10-02 2013-08-20 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
TW102134810A TWI569307B (zh) 2012-10-02 2013-09-26 Substrate processing method and substrate processing system
KR1020157008388A KR101967503B1 (ko) 2012-10-02 2013-09-30 기판 처리 방법, 컴퓨터 기억 매체 및 기판 처리 시스템
US14/430,574 US20150228512A1 (en) 2012-10-02 2013-09-30 Substrate treatment method, computer-readable storage medium, and substrate treatment system
PCT/JP2013/076511 WO2014054570A1 (ja) 2012-10-02 2013-09-30 基板処理方法、コンピュータ記憶媒体及び基板処理システム

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Application Number Priority Date Filing Date Title
JP2012220819 2012-10-02
JP2012220819 2012-10-02
JP2013170120A JP6141144B2 (ja) 2012-10-02 2013-08-20 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム

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JP2014087781A JP2014087781A (ja) 2014-05-15
JP2014087781A5 JP2014087781A5 (enExample) 2015-10-15
JP6141144B2 true JP6141144B2 (ja) 2017-06-07

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US (1) US20150228512A1 (enExample)
JP (1) JP6141144B2 (enExample)
KR (1) KR101967503B1 (enExample)
TW (1) TWI569307B (enExample)
WO (1) WO2014054570A1 (enExample)

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JP5919210B2 (ja) * 2012-09-28 2016-05-18 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
WO2016125408A1 (ja) * 2015-02-05 2016-08-11 東京エレクトロン株式会社 研磨装置、塗布膜形成装置、塗布膜形成方法、記憶媒体、パターン形成方法及びパターン形成装置
JP6267143B2 (ja) * 2015-03-05 2018-01-24 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
TWI723052B (zh) * 2015-10-23 2021-04-01 日商東京威力科創股份有限公司 基板處理方法、程式及電腦記憶媒體
JP6896447B2 (ja) 2017-02-14 2021-06-30 株式会社Screenホールディングス 基板処理方法
JP6914048B2 (ja) 2017-02-14 2021-08-04 株式会社Screenホールディングス 基板処理方法
JP7030414B2 (ja) 2017-02-14 2022-03-07 株式会社Screenホールディングス 基板処理方法及びその装置

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JP3741604B2 (ja) * 2000-11-27 2006-02-01 東京エレクトロン株式会社 熱処理装置および熱処理方法
US6746825B2 (en) * 2001-10-05 2004-06-08 Wisconsin Alumni Research Foundation Guided self-assembly of block copolymer films on interferometrically nanopatterned substrates
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JP4264515B2 (ja) * 2004-03-10 2009-05-20 独立行政法人産業技術総合研究所 リソグラフィーマスク及び微細パターンを作製する方法
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JP5555111B2 (ja) * 2010-09-27 2014-07-23 株式会社日立製作所 シルセスキオキサンを有する高分子薄膜、微細構造体及びこれらの製造方法

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