TWI355970B - Coating treatment apparatus, substrate treatment s - Google Patents

Coating treatment apparatus, substrate treatment s Download PDF

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TWI355970B
TWI355970B TW097101387A TW97101387A TWI355970B TW I355970 B TWI355970 B TW I355970B TW 097101387 A TW097101387 A TW 097101387A TW 97101387 A TW97101387 A TW 97101387A TW I355970 B TWI355970 B TW I355970B
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Prior art keywords
coating
substrate
pattern
liquid
irradiation
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TW097101387A
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Chinese (zh)
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TW200916200A (en
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Makoto Muramatsu
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Tokyo Electron Ltd
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Priority claimed from JP2007010179A external-priority patent/JP4884991B2/en
Priority claimed from JP2007147694A external-priority patent/JP4950771B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
    • B05B1/04—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape in flat form, e.g. fan-like, sheet-like
    • B05B1/044—Slits, i.e. narrow openings defined by two straight and parallel lips; Elongated outlets for producing very wide discharges, e.g. fluid curtains
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/023—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface
    • B05C11/028—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface with a body having a large flat spreading or distributing surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Materials For Photolithography (AREA)

Description

1355970 直史著作「對於多層配線構造之SOG製程的改良」電氣 情報通訊學會論文誌C-II Vol. J78-C-II No.5 1995年）。 但是，如第28圖所示般，如此以往的塗佈液被塗佈 於晶圓W之特定圖案P上之時，因塗佈液中之固體狀之 塗佈膜形成成分之流動性差，故塗佈液無法圓滑擴散晶圓 W之特定圖案P之凹凸上。其結果，形成有圖案P之穴Η 之區域S中，較無形成圖案Ρ之穴Η之區域Τ，塗佈膜R 凹陷，產生塗佈膜R之高度不同之所謂階差。因此，以往 之塗佈膜R之表面不平坦化，有即使在形成於該塗佈膜R 上之光阻膜也產生階差之問題。 【發明內容】 本發明是鑒於如此之點所創作出者，以對於在形成於 基板之特定圖案上形成塗佈膜，使該塗佈膜之表面平坦化 爲目的。 爲了達成上述目的，本發明爲提供一種在形成於基板 之圖案上形成塗佈膜的塗佈處理裝置，具有：處理容器， 具有用以將基板搬入搬出之搬入出口，而收容基板；塗佈 噴嘴，在收容於上述處理容器內之基板的圖案上，塗佈含 有液體狀之塗佈膜形成成份之塗佈液：和照射部，對塗佈 於上述基板之圖案上之塗佈液照射紫外線之照射部》 若藉由本發明之塗佈處理裝置，基板被搬運至處理容 器內之後，當藉由塗佈噴嘴，在基板之圖案上塗佈含有液 體狀之塗佈膜形成成分時，因該塗佈液所含之液體狀之塗 -5- 1355970 • 具，藉由上述照射部對基板之圖案上之塗佈液照射紫外線 之範圍，即使爲從基板之中心至基板之端部爲止之區域以 上亦可。如此一來，當對藉由旋轉夾具旋轉之基板照射紫 外線時，僅以將紫外線至少照射至基板中心至基板端部之 範圍，則可以在基板全面形成塗佈膜。並且，此時，上述 照射部即使附設於上述塗佈噴嘴亦可。 上述塗佈噴嘴爲具有延伸於基板之寬方向之縫隙狀之 吐出口的噴嘴，上述照射部即使具有與上述塗佈噴嘴平行 延伸於基板之寬方向之形態，與上述塗佈噴嘴同步移動亦 可。如此一來，藉由塗佈噴嘴與照射部同步而移動，在基 板面內之全區域中，可以控制成從塗佈塗佈液至照射紫外 線爲止之時間成爲一定。並且，此時，即使上述照射部附 設於上述塗佈噴嘴亦可。再者，上述塗佈噴嘴和上述照射 部即使具有獨立之移動機構亦可，上述照射部即使多數設 置亦可。 上述塗佈處理裝置即使具有控制成對自上述塗佈噴嘴 將塗佈液塗佈在基板區域上之後的該區域上之塗佈液，緊 接著自上述照射部照射紫外線的控制部亦可。依據該控制 部，因塗佈於基板圖案上之塗佈液是於塗佈於基板之後， 緊接著照射紫外線而硬化，故可以抑制塗佈液之昇華。 若藉由本發明之另外觀點時，則提供一種基板處理系 統，具有在形成於基板之圖案上塗佈塗佈液之塗佈處理裝 置，和將基板搬入搬出至上述塗佈處理裝置之搬運裝置。 然後，上述搬運裝置具有支撐基板而予以搬運之搬運臂， 1355970 液，使塗佈液硬化而形成，故於使用具有液體狀之塗佈形 成成分之塗佈液時，於使塗佈液硬化之時，塗佈液則昇 華。但是，若藉由本發明之塗佈處理方法，因對塗佈於基 板之圖案上之塗佈液照射紫外線，使塗佈液中之塗佈膜形 成成分所含之光聚合起始劑活性化而使塗佈液硬化，在基 板之圖案上形成塗佈膜，故不需要加熱塗佈液，或是不需 要加熱至所需以上，可以較以往抑制塗佈液之昇華。再 者，當對光聚合起始劑照射紫外線時，光聚合起始劑以短 時間活性化，可以以短時間執行塗佈液之硬化。該光聚合 起始劑之短時間內的活性化也有助於抑制塗佈液之昇華。 如此一來，因可以抑制塗佈液之昇華，故可以抑制所形成 之塗佈膜之膜厚之減少。 即使將從完成上述塗佈工程至開始上述照射工程爲止 之時間，控制成事先所預定之時間以內亦可。該時間於放 置塗佈有塗佈液之基板時，可以設定成該被塗佈之塗佈液 昇華之量成爲容許範圍內之時間。如此一來，藉由控制時 間，塗佈工程是從完成塗佈工程至開啓照射工程爲止，即 使塗佈液昇華，亦可以將所形成之塗佈膜之膜厚之減少抑 制在容許範圍內。 即使在基板面內之所有區域，控制成從在上述塗佈工 程中塗佈塗佈液至在上述照射工程中照射紫外線爲止之時 間成爲一定亦可。依此，因在塗佈有塗佈液之基板之面內 所有區域，可以使塗佈有塗佈液昇華之量成爲一定，故可 以使所形成之塗佈膜之膜厚均勻。 -9- 1355970 即使對將塗佈液塗佈於基板之區域上之後的該 之塗佈液，緊接著執行上述照射工程中之紫外線之 可。依此，被塗佈於基板之圖案上之塗佈液，於被 基板之後，緊接著照射紫外線而硬化，故可以使從 之塗佈至紫外線照射之時間成爲短時間，並可以抑 液之昇華。 塗佈工程或是上述照射工程之雙方或任一方即 基板周邊之環境而被執行亦可。依此，因塗佈於基 案上之塗佈液被冷卻，故可以更抑制塗佈液之昇華 於上述塗佈工程之後，並且上述照射工程之前 具有以特定時間加熱基板周邊之環境，使塗佈於上 之圖案上之塗佈液昇華至成爲特定厚度爲止之加熱 可 ° 依此，於將塗佈液塗佈在基板之圖案上之後， 之塗佈液之厚較度特定之厚度厚時，在特定時間加 周邊之環境，使基板之圖案之塗佈液昇華，依此可 佈液之厚度成爲特定厚度》其結果，可以形成特定 塗佈膜。並且，如此一來，塗佈膜之膜厚雖然可由 溫度和時間控制，但是大膜厚之變化即使以溫度控 膜厚之變化以時間控制亦可。 如此一來，藉由以特定時間加熱基板周邊之環 可以使被塗佈於圖案之凹部份以外之圖案表面的塗 部昇華。即是，使形成於圖案上之塗佈膜之膜厚成 藉由僅在圖案之凹佈塡充塗佈液並予以硬化，則可 區域上 照射亦 塗佈於 塗佈液 制塗佈 使冷卻 板之圖 〇 ，即使 述基板 工程亦 所塗佈 熱基板 以使塗 膜厚之 加熱之 制，小 境，亦 佈液全 爲零， 以消除 -10- 1355970 圖案之凹凸，使圖案上面平坦化。自以往，於形成塗佈膜 之後，作爲不需要圖案上之塗佈膜之方法，有例如執行蝕 刻而除去該塗佈膜之所謂的回蝕工程之情形，但是若藉由 本發明則可以省略如此之回餽工程，可以提升基板處理之 產出量。 於上述照射工程之後，即使具有以特定時間加熱基板 周邊之環境，使形成在上述基板之塗佈上之塗佈膜昇華之 加熱工程亦可。例如於形成在基板圖案上之塗佈膜上之光 阻膜之膜厚不均勻，或光阻膜之圖案非所欲者之時，剝離 該光阻膜和塗佈膜之後，於基板圖案上再形成塗佈膜和光 阻膜的所謂再製加工（rework )處理。該再製處理之時除 去光阻膜和塗佈膜，自以往是照射〇2電漿或N2/H2電漿 而執行。但是，如以往般，於執行〇2電漿時，基板之圖 案則有受到〇2電漿等而損傷之情形。因在如此之再製處 理時，因可以藉由加熱基板周邊之環境，使塗佈膜昇華而 剝離，故可以減輕對基板上之圖案所造成之損傷或消失。 再者，依此，可以改善再製時之良率下降。 若藉由本發明之另外觀點，則提供一種可讀取之電腦 記憶媒體，爲了藉由塗佈處理裝置或是基板處理系統實行 上述塗佈處理方法，儲存有控制該塗佈處理裝置或基板處 理系統之控制部之電腦上動作的程式。 若藉由本發明對於在形成於基板之特定圖案上形成塗 佈膜，可以使塗佈膜表面平坦化，可以抑制塗佈液之昇 華，抑制塗佈膜之膜厚之減少。1355970 The direct history book "Improvement of SOG Process for Multilayer Wiring Structure" Electrical Information and Communication Society Papers C-II Vol. J78-C-II No.5 1995). However, as shown in Fig. 28, when the conventional coating liquid is applied to the specific pattern P of the wafer W, the fluidity of the solid coating film forming component in the coating liquid is poor. The coating liquid cannot smoothly spread on the unevenness of the specific pattern P of the wafer W. As a result, in the region S where the pattern P is formed, the coating film R is recessed in the region 较 where the pattern Ρ is not formed, and the so-called step difference in the height of the coating film R is different. Therefore, the surface of the conventional coating film R is not flattened, and there is a problem that a step is formed even in the photoresist film formed on the coating film R. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and aims to form a coating film on a specific pattern formed on a substrate to planarize the surface of the coating film. In order to achieve the above object, the present invention provides a coating processing apparatus for forming a coating film on a pattern formed on a substrate, comprising: a processing container having a loading/unloading port for loading and unloading the substrate, and accommodating the substrate; Applying a coating liquid containing a liquid coating film forming component to the pattern of the substrate contained in the processing container, and irradiating the coating liquid applied to the pattern of the substrate to ultraviolet rays. Irradiation unit>> When the substrate is transported into the processing container by the coating processing apparatus of the present invention, when the coating film forming component containing the liquid is applied onto the pattern of the substrate by the application nozzle, the coating is applied In the liquid-like coating of the cloth liquid - 5 - 1355970, the coating liquid on the pattern of the substrate is irradiated with ultraviolet rays by the irradiation portion, even from the center of the substrate to the end portion of the substrate Also. As a result, when the ultraviolet ray is irradiated to the substrate rotated by the rotating jig, the coating film can be formed over the entire substrate only by irradiating the ultraviolet ray at least to the center of the substrate to the end portion of the substrate. Further, in this case, the irradiation unit may be attached to the application nozzle. The coating nozzle is a nozzle having a slit-shaped discharge port extending in a width direction of the substrate, and the irradiation portion may have a shape extending in parallel with the coating nozzle in a width direction of the substrate, and may be moved in synchronization with the coating nozzle. . As a result, the coating nozzle moves in synchronization with the irradiation unit, and the time from the application of the coating liquid to the irradiation of the ultraviolet ray can be controlled to be constant over the entire area of the substrate surface. Further, in this case, the irradiation unit may be attached to the coating nozzle. Further, the coating nozzle and the irradiation unit may have an independent moving mechanism, and the irradiation unit may be provided in a large number. The coating treatment apparatus may have a coating liquid that is controlled to apply the coating liquid on the region after the coating liquid is applied to the substrate region from the coating nozzle, and may be followed by a control unit that irradiates ultraviolet rays from the irradiation portion. According to the control unit, since the coating liquid applied to the substrate pattern is applied to the substrate and then cured by irradiation with ultraviolet rays, sublimation of the coating liquid can be suppressed. According to another aspect of the present invention, there is provided a substrate processing system comprising: a coating processing apparatus that applies a coating liquid on a pattern formed on a substrate; and a conveying apparatus that carries the substrate into and out of the coating processing apparatus. Then, the transporting device has a transfer arm that supports the substrate and is transported, and the 1355970 liquid is formed by curing the coating liquid. Therefore, when the coating liquid having the liquid coating forming component is used, the coating liquid is hardened. At the time, the coating liquid is sublimed. However, according to the coating treatment method of the present invention, the coating liquid applied to the pattern of the substrate is irradiated with ultraviolet rays to activate the photopolymerization initiator contained in the coating film forming component in the coating liquid. Since the coating liquid is hardened and a coating film is formed on the pattern of the substrate, it is not necessary to heat the coating liquid, or heating to a required level or more is required, and sublimation of the coating liquid can be suppressed as compared with the prior art. Further, when the photopolymerization initiator is irradiated with ultraviolet rays, the photopolymerization initiator is activated in a short time, and hardening of the coating liquid can be performed in a short time. The activation of the photopolymerization initiator in a short period of time also contributes to suppression of sublimation of the coating liquid. As a result, since the sublimation of the coating liquid can be suppressed, the film thickness of the formed coating film can be suppressed from being reduced. The time from the completion of the above coating process to the start of the above-described irradiation process can be controlled to be within a predetermined time. When the substrate coated with the coating liquid is placed at this time, the amount of sublimation of the applied coating liquid can be set to a time within an allowable range. In this way, by controlling the time, the coating process can be performed from the completion of the coating process to the opening of the irradiation process, and even if the coating liquid is sublimated, the film thickness of the formed coating film can be reduced within an allowable range. Even in all areas in the surface of the substrate, the time from the application of the coating liquid in the above coating process to the irradiation of the ultraviolet rays in the above-described irradiation process is controlled to be constant. According to this, since the amount of sublimation applied to the coating liquid can be made constant in all the regions in the surface of the substrate coated with the coating liquid, the film thickness of the formed coating film can be made uniform. -9-1355970 Even if the coating liquid after applying the coating liquid onto the substrate is subjected to the ultraviolet ray in the above irradiation process. According to this, the coating liquid applied to the pattern of the substrate is cured by irradiation with ultraviolet rays immediately after the substrate is applied, so that the time from application to ultraviolet irradiation can be shortened, and sublimation can be suppressed. . The coating process or either or both of the above-described irradiation processes may be performed in the environment surrounding the substrate. According to this, since the coating liquid applied to the base case is cooled, it is possible to further suppress the sublimation of the coating liquid after the coating process, and to heat the environment around the substrate at a specific time before the irradiation process, so that the coating is performed. The coating liquid on the upper pattern is sublimated to a specific thickness, and thus, after the coating liquid is applied onto the pattern of the substrate, the thickness of the coating liquid is thicker than the specific thickness. In a surrounding environment at a specific time, the coating liquid of the pattern of the substrate is sublimated, whereby the thickness of the liquid can be made into a specific thickness. As a result, a specific coating film can be formed. Further, in this case, although the film thickness of the coating film can be controlled by temperature and time, the change in the large film thickness can be controlled by time even if the temperature is controlled by the film thickness. In this way, the coating portion coated on the surface of the pattern other than the concave portion of the pattern can be sublimated by heating the ring around the periphery of the substrate at a specific time. In other words, the film thickness of the coating film formed on the pattern is increased by applying the coating liquid only to the pattern of the embossed cloth, and the coating can be applied to the coating liquid to be cooled. In the figure of the board, even if the substrate is coated, the hot substrate is coated to make the thickness of the coating film thick, and the liquid is completely zero, so as to eliminate the unevenness of the pattern of -10- 1355970 and flatten the pattern. . Conventionally, after forming a coating film, as a method of not requiring a coating film on a pattern, there is a case where a so-called etch back process of removing the coating film is performed by etching, for example, but the present invention can be omitted. The feedback project can increase the throughput of substrate processing. After the above irradiation process, even if the environment around the substrate is heated for a specific period of time, the heating process for sublimating the coating film formed on the coating of the substrate may be performed. For example, when the film thickness of the photoresist film formed on the coating film on the substrate pattern is not uniform, or the pattern of the photoresist film is undesired, after the photoresist film and the coating film are peeled off, on the substrate pattern A so-called rework process of forming a coating film and a photoresist film is further performed. The removal of the photoresist film and the coating film at the time of the rework treatment was carried out by irradiating 〇2 plasma or N2/H2 plasma. However, as in the past, when the 〇2 plasma is executed, the pattern of the substrate is damaged by the 电2 plasma or the like. In the case of such a reprocessing, since the coating film can be sublimated and peeled off by heating the environment around the substrate, damage or disappearance of the pattern on the substrate can be reduced. Furthermore, according to this, the yield reduction at the time of reproduction can be improved. According to another aspect of the present invention, a readable computer memory medium is provided, and the coating processing apparatus or the substrate processing system is stored for storing the coating processing method by a coating processing apparatus or a substrate processing system. The program that operates on the computer of the control unit. According to the present invention, by forming a coating film on a specific pattern formed on a substrate, the surface of the coating film can be flattened, and the sublimation of the coating liquid can be suppressed, and the film thickness of the coating film can be suppressed from being reduced.

-11 - (S 1355970 由下方依序5段疊層例如顯像液供給至晶圓W而予以顯 像處理之顯像處理裝置30〜34。再者，於第1處理裝置群 G1及第2處理裝置群G2之最下段，各設置有用以將各種 處理液供給至各處理裝置群G1、G2內之液處理裝置之化 ' 學室 40、41。 ’ 例如，第3圖所示般，在第3處理裝置群G3，由下 方依序9段疊層溫度調節裝置60、轉換裝置61、在精度 φ 高之溫度管理下調節晶圓W之溫度的高精度溫度調節裝 置62〜64及以高溫處理晶圓W之高溫度熱處理裝置65〜 68 ° 在第4處理裝置群G4中，例如加熱處理高精度溫度 調節裝置70、光阻塗佈處理後之晶圓W的預烘烤裝置71 〜74及加熱處理顯像處理後之晶圓w之後烘烤裝置75〜 79 · 在第5處理裝置群G5中’由下方依序1〇段疊層熱處 φ 理晶圓W之多數熱處理裝置’例如高精度溫度調節裝置 80〜83、事後曝光烘烤裝置84〜89。 • 如第1圖所示般’在第1搬運裝置A1之X方向正方 向側，配置有多數處理裝置，例如第3圖所示般，由下方 • 4段重疊用以將晶圓W疏水化處理之附著裝置9〇、91、 加熱晶圓W之加熱裝置92、93。如第1圖所示般，在第 2搬運裝置A2之X方向正方向側，配置有選擇性僅使例 如晶圓W之邊緣部曝光之周邊曝光裝置94。 在介面部4上，設置有例如第丨圖所示般在朝向χ方 -14- 1355970 向延伸之搬運路100上移動之晶圓搬運體101，和緩衝匣 盒102。晶圓搬運體101可在z方向移動，並且也可在0 旋轉，可以對與介面部4鄰接之曝光裝置（無圖式）和緩 衝匣盒102及第5處理裝置群G5存取而搬運晶圓W。 接著，針對塗佈處理裝置24之構成，根據第4圖予 以說明。塗佈處理裝置24具有處理容器150。處理容器 150之一側面是面對晶圓W之搬運手段之第1搬運臂1〇 之搬入區域之面，形成晶圓W之搬入出口 151，在搬入出 口 151設置有開關快門152。 在處理容器150之內部設置有將W水平真空吸附保 持於於其上面而作爲基板保持機構之旋轉夾具120。該旋 轉夾具120可以藉由包含馬達等之旋轉驅動部121繞著垂 直軸旋轉，並且升降。 在旋轉夾具120之周圍設置有杯罩體122。杯罩體 122是以旋轉夾具120可以升降之方式，形成比晶圓W大 之開口部。在杯罩體122底部，形成有用以自晶圓W上 排出零落之塗佈液之排液口 123，該排液口 123連接有排 液管124 。 在旋轉夾具120之上方，配置有用以將塗佈液塗佈於 晶圓W表面之中心部的塗佈噴嘴1 3 0。塗佈噴嘴1 3 0。塗 佈噴嘴1 3 0經塗佈液供給管1 3 1而連接於供給塗佈液之塗 佈液供給源1 3 2。在塗佈液供給管1 3 1設置有具有閥或流 量調整佈等之供給控制裝置133。自塗佈液供給源132所 供給之塗佈液使用例如XUV (日產化學工業株式會社製 (S ) -15- 1355970 品）’於塗佈液含有液體狀之塗佈膜形成成分和溶劑。塗 佈膜形成成分包含碘鑰鹽等之光聚合起始劑、環氧樹脂、 丙二醇單甲醚、丙二醇單甲醚醋酸鹽等。使用例如稀釋劑 作爲溶劑。 在處理容器150之上方設置有對旋轉夾具120上之晶 圓W照射紫外線之照射部丨丨〇。照射部丨〗〇可以對晶圓w 之全面照射紫外線。 塗佈噴嘴130是如第5圖所示般，經機械臂134而連 接於移動機構135。機械臂134是可以藉由移動機構 135，沿著順著處理容器150之長度方向（Y方向）而設 置之導軌136，自設置在杯罩體122之一端側（在第5圖 中爲左側）之外側之待機區域1 3 7朝向另一端側移動，並 且，可以在上下方向移動。待機區域137構成可以收納塗 佈噴嘴130,並且具有可以洗淨塗佈噴嘴130之前端部之 洗淨部137a。 搭載本實施形態所涉及之塗佈處理裝置24之塗佈顯 像處理系統1構成以上般，接著針對在該塗佈顯像處理系 統1所執行之晶圓處理予以說明。 首先，藉由晶圓搬運體7，自匣盒載置台5上之匣盒 C取出一片在表面形成特定圖案之晶圓W，搬運至第3處 理裝置群G3之溫莨調節裝置60。被搬運至溫度調節裝置 60之晶圓W被溫度調節至特定溫度，之後，被搬運至本 發明所涉及之塗佈處理裝置24。 晶圓W藉由第1搬運臂10自搬入出口 151被搬運至 -16- 1355970 處理容器150內，移動至旋轉夾具120之上方。在此，使 旋轉夾具120上昇，自第1搬運機械臂1〇轉交晶圓至旋 轉夾具120»然後，旋轉夾具120吸附晶圓W而水平保 持，將晶圓W下降至特定位置β 接著，藉由旋轉驅動部121以例如旋轉數500 rpm使 晶圓W旋轉，並且使塗佈噴嘴130移動至晶圓W之中心 部上方。然後，如第6圖（a)所示般，自塗佈噴嘴130 例如2秒吐出塗佈液Q至晶圓 W之中心部，以旋轉數 1500 rpm使晶圓W加速而使旋轉15秒，藉由該晶圓W之 旋轉所產生之離心力，使塗佈液Q擴散至晶圓W之圖案P 上。之後，使塗佈噴嘴130自晶圓W之中心部上方移動 至待機區域137。 當塗佈液Q擴散至晶圓W之塗佈P上之全面時，藉 由旋轉夾具120使晶圓W上昇至特定位置。然後，自照 射部1 1 〇對被塗佈於晶圓W之圖案P上之塗佈液Q，以例 如2秒間/cm2照射例如波長222 nm、能量7 mW/cm2之紫 外線。藉由該照射之紫外線，塗佈液Q內所含之光聚合起 始劑活性化，塗佈液Q硬化。然後，如第6圖（b )所示 般，在晶圓W之圖案P上形成塗佈液硬化之塗佈膜R。塗 佈膜R例如以1 00 nm〜3 00 nm之膜厚形成。 當在晶圓W之圖案P上形成塗佈膜R時，晶圓W藉 由第1搬運臂10搬運至底部塗佈裝置23，形成反射防止 膜。形成有反射防止膜之晶圓W，藉由第1搬運臂1〇依 序被搬運至加熱裝置2、高溫度熱處理裝置65、高精度溫 -17- 1355970 因自照射部110對塗佈於晶圓W之圖案P上之塗佈 液Q照射紫外線，依此使塗佈液Q硬化，可以在晶圓W 之圖案P上形成塗佈膜R，故不需要如以往般於形成塗佈 膜R之時’加熱塗佈液，可以較以往抑制由於加熱容易昇 華之塗佈液Q之昇華。因此，可以抑制所形成之塗佈膜R 之膜厚之減少。 並且，照射部110因設置在處理容器150內之上部， 對旋轉夾具120上之晶圓W照射紫外線，故可以在晶圓 W收容在處理容器150內之狀態下，對晶圓W執行塗佈 液Q之塗佈和紫外線之照射。因此，可以連續執行自塗佈 液Q之塗佈至紫外線照射爲止之處理，其部份可以縮短處 理時間。 以上之實施形態所記載之照射部110雖然設置在處理 容器150內之上部，但是照射部111是如第7圖所示般， 即使設置在處理容器150上面150a之外側亦可。照射部 111設置在可以對旋轉夾具120上之晶圓W照射紫外線之 方向’在上面15 0a使用使紫外線透過之例如無色透明之 玻璃板。此時’自照射部1 1 1所照射之紫外線通過上面 1 5 0a ’照射至晶圓W之圖案P上之塗佈液q，可以形成塗 佈膜R。再者，因即使塗佈液Q飛散至例如處理容器150 內，照射部也不會污染，故可以使照射部111之維修之頻 率減少。 以上之實施形態中所記載之照射部1 1 0、1 1 1雖然設 置在旋轉夾具120之上方，但是照射部160如第8圖所示 -19- 1355970 般，即使設置在搬入出口 151之上部亦可。此時，自塗佈 噴嘴130將塗佈液Q塗佈在晶圓W之圖案P上之後，藉 由第1搬運臂10將晶圓W從處理容器150之搬入出口 151搬運至外部之時，則可以藉由照射部160對晶圓W之 圖案P上之塗佈液Q照射紫外線。因此，可以在處理容器 150內對晶圓W連續執行塗佈液Q之塗佈和紫外線之照 射，可以縮短從塗佈液Q之塗佈至紫外線照射爲止之時 間。 以上之實施形態所記載之照射部1 1 0、1 1 1、1 60雖然 設置在旋轉夾具120上方，或是搬入出口 151之上部，但 是照射部17G是如第9圖所示般，即使附設於塗佈噴嘴 130亦可。照射部170如第10圖所示般，藉由塗佈噴嘴 1 3 0之一的側面1 3 0 a和照射部1 7 0之一的側面1 7 0 a連 接’附設於塗佈噴嘴130。此時，藉由調整照射部170之 上下方向之位置，或是晶圓W之上下方向之位置，如第9 圖所示般，對從晶圓W之中心至晶圓W之端部之範圍 Η ’晶圓W之圖案P上之塗佈液Q照射紫外線。 在塗佈處理裝置24即使設置有控制來自照射部17〇 之紫外線之照射，或是藉由供給控制裝置1 33之塗佈液' 133之塗佈液Q之塗佈等的控制部340亦可。該控制部 340是控制成自塗佈噴嘴130在晶圓W之區域上塗佈塗佈 液之後，緊接著對該區域上之塗佈液Q，自照射部170照 射紫外線。 此時，因自照射部170對藉由旋轉夾具120所旋轉之 &lt; S ) -20- 1355970 晶圓W照射紫外線，故僅以至少對範圍Η照射紫外線， 硬化晶圓W全面之塗佈液Q，可以形成塗佈膜R。 再者，藉由控制部3 4 0之控制，塗佈在晶圓W之圖 案Ρ上之塗佈液Q因對晶圓W被塗佈之後緊接著照射紫 外線而硬化，故可以抑制塗佈液Q之昇華。 即使取代以上實施形態所記載之塗佈噴嘴1 30，如第 11圖所示般，使用具有延仲於X方向之縫隙狀之吐出口 140a之塗佈噴嘴140亦可。塗佈噴嘴140是如第12圖及 第13圖所示般，例如形成較晶圓W之X方向之寬度長。 塗佈噴嘴140沿著導軌136，可以自設置在杯罩122之一 端側（在第13圖中爲左側）之外側之待機區域141朝向 另一端側移動。待機區域141構成可以收納塗佈噴嘴 140。並且，照射部即使使用上照射部110、111、160中 之任一者亦可。即使如此之時，自塗佈噴嘴140將塗佈液 Q塗佈在晶圓 W之圖案P上之後，藉由照射部1 10、 111、160中之任一者，將紫外線照射至晶圓W之圖案P 上之塗佈液Q，可以形成塗佈膜R。 於使用以上之實施形態中所記載之塗佈噴嘴140之 時，照射部190如第14圖所示般，即使與塗佈噴嘴140 平行延伸於晶圓 W之寬方向，附設於塗佈噴嘴140亦 可。照射部190是如第15圖所示般，連接塗佈噴嘴140 之一的側面140a和照射部190之一的側面190a連接，附 設於塗佈噴嘴140。 再者，其塗佈處理裝置24即使設置有控制來自照射 -21 --11 - (S 1355970 Development processing devices 30 to 34 which are subjected to development processing by supplying, for example, a developing liquid to the wafer W in the following five stages. Further, in the first processing apparatus group G1 and the second In the lowermost stage of the processing apparatus group G2, each of the processing units is provided to supply the processing units 40 and 41 of the liquid processing apparatus in the respective processing apparatus groups G1 and G2. For example, as shown in Fig. 3, In the third processing apparatus group G3, the temperature adjustment device 60 and the conversion device 61 are stacked in sequence, and the high-precision temperature adjustment devices 62 to 64 for adjusting the temperature of the wafer W under temperature control with high accuracy φ are high-temperature. High-temperature heat treatment apparatus 65 to 68 ° for processing the wafer W. In the fourth processing apparatus group G4, for example, the high-precision temperature adjustment apparatus 70 for heat treatment and the pre-baking apparatus 71 to 74 of the wafer W after the photoresist coating treatment are processed. And the wafer w after the heat treatment process, the post-bake devices 75 to 79. In the fifth processing device group G5, 'a plurality of heat treatment devices for laminating the heat W from the lower side of the process are stacked, for example. High-precision temperature adjustment devices 80 to 83 and post-exposure baking devices 84 to 89. As shown in Fig. 1, a plurality of processing devices are disposed on the positive side in the X direction of the first transporting device A1. For example, as shown in Fig. 3, the wafers are hydrophobized by the lower four segments. Adhesive devices 9A and 91, and heating devices 92 and 93 for heating the wafer W. As shown in Fig. 1, in the positive direction of the X direction of the second transfer device A2, only the wafer W is selectively disposed. The peripheral exposure device 94 that exposes the edge portion. The intermediate surface portion 4 is provided with a wafer carrier 101 that moves on the conveyance path 100 extending toward the side of the side 14-1355970, as shown in FIG. The cartridge 102. The wafer carrier 101 is movable in the z direction and is also rotatable at 0, and can be accessed by an exposure device (not shown) adjacent to the face portion 4, and the buffer cassette 102 and the fifth processing device group G5. Next, the configuration of the coating processing apparatus 24 will be described with reference to Fig. 4. The coating processing apparatus 24 has a processing container 150. One side of the processing container 150 is a conveying means for facing the wafer W. The surface of the loading arm of the first transfer arm 1 is formed to form the loading and unloading port of the wafer W. 51. A switch shutter 152 is provided at the carry-in port 151. Inside the process container 150, a rotary jig 120 for holding a horizontal vacuum suction thereon as a substrate holding mechanism is provided. The rotation jig 120 may include a motor or the like. The rotation driving unit 121 rotates around the vertical axis and moves up and down. A cup cover 122 is provided around the rotating jig 120. The cup cover 122 is formed so that the rotating jig 120 can be raised and lowered to form an opening larger than the wafer W. At the bottom of the cup cover 122, a liquid discharge port 123 for discharging the coating liquid from the wafer W is formed, and the liquid discharge port 123 is connected to the liquid discharge pipe 124. Above the rotating jig 120, a coating nozzle 130 for applying a coating liquid to the center of the surface of the wafer W is disposed. The nozzle 1 3 0 is coated. The coating nozzle 130 is connected to the coating liquid supply source 133 for supplying the coating liquid via the coating liquid supply pipe 131. The coating liquid supply pipe 133 is provided with a supply control device 133 having a valve, a flow rate adjusting cloth, and the like. The coating liquid supplied from the coating liquid supply source 132 is, for example, XUV (manufactured by Nissan Chemical Industries, Ltd. (S) -15-1355970), and the coating liquid contains a liquid coating film forming component and a solvent. The coating film forming component contains a photopolymerization initiator such as an iodine salt, an epoxy resin, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate or the like. For example, a diluent is used as a solvent. An irradiation portion 照射 that irradiates the crystal grains W on the rotating jig 120 with ultraviolet rays is disposed above the processing container 150. The illuminating unit can irradiate the entire surface of the wafer w with ultraviolet rays. The coating nozzle 130 is connected to the moving mechanism 135 via the robot arm 134 as shown in Fig. 5 . The robot arm 134 is a guide rail 136 which is provided along the longitudinal direction (Y direction) of the processing container 150 by the moving mechanism 135, and is disposed on one end side of the cup cover 122 (left side in FIG. 5) The standby area 1 3 7 on the outer side moves toward the other end side, and is movable in the up and down direction. The standby area 137 is configured to accommodate the coating nozzle 130 and has a washing portion 137a that can wash the end portion of the coating nozzle 130. The coating image processing system 1 equipped with the coating processing apparatus 24 according to the present embodiment has the above configuration. Next, the wafer processing executed by the coating development processing system 1 will be described. First, a wafer W having a specific pattern formed on the surface is taken out from the cassette C on the cassette mounting table 5 by the wafer carrier 7, and transported to the temperature adjusting device 60 of the third processing unit group G3. The wafer W transported to the temperature adjusting device 60 is temperature-adjusted to a specific temperature, and then transported to the coating processing apparatus 24 according to the present invention. The wafer W is transported into the processing container 150 by the first transfer arm 10 from the loading/unloading port 151, and moved to the upper side of the rotating jig 120. Here, the rotating jig 120 is raised, and the wafer is transferred from the first transfer robot 1 to the rotating jig 120». Then, the rotating jig 120 adsorbs the wafer W and horizontally holds the wafer W to a specific position β. The wafer W is rotated by the rotation driving unit 121 at, for example, a number of revolutions of 500 rpm, and the coating nozzle 130 is moved above the center portion of the wafer W. Then, as shown in Fig. 6(a), the coating nozzle 130 is ejected from the coating nozzle 130 to the center portion of the wafer W for 2 seconds, for example, and the wafer W is accelerated by a rotation of 1500 rpm for 15 seconds. The coating liquid Q is diffused onto the pattern P of the wafer W by the centrifugal force generated by the rotation of the wafer W. Thereafter, the coating nozzle 130 is moved from above the center portion of the wafer W to the standby region 137. When the coating liquid Q is spread over the entire surface of the coating P of the wafer W, the wafer W is raised to a specific position by the rotating jig 120. Then, the coating liquid 1 to the coating liquid Q applied to the pattern P of the wafer W is irradiated with, for example, an ultraviolet ray of a wavelength of 222 nm and an energy of 7 mW/cm 2 for 2 seconds/cm 2 . The photopolymerization initiator contained in the coating liquid Q is activated by the ultraviolet rays to be irradiated, and the coating liquid Q is cured. Then, as shown in Fig. 6(b), a coating film R on which the coating liquid is cured is formed on the pattern P of the wafer W. The coating film R is formed, for example, at a film thickness of from 100 nm to 300 nm. When the coating film R is formed on the pattern P of the wafer W, the wafer W is transported to the bottom coating device 23 by the first transfer arm 10 to form an anti-reflection film. The wafer W on which the anti-reflection film is formed is sequentially transported to the heating device 2, the high-temperature heat treatment device 65, and the high-precision temperature -17-1355970 by the first transfer arm 1 is applied to the crystal by the irradiation unit 110. The coating liquid Q on the pattern P of the circle W is irradiated with ultraviolet rays, whereby the coating liquid Q is cured, and the coating film R can be formed on the pattern P of the wafer W. Therefore, it is not necessary to form the coating film R as in the prior art. When the coating liquid is heated, the sublimation of the coating liquid Q which is easily sublimated by heating can be suppressed. Therefore, the reduction in the film thickness of the formed coating film R can be suppressed. Further, since the irradiation unit 110 is provided on the upper portion of the processing container 150 and irradiates the wafer W on the rotating jig 120 with ultraviolet rays, the wafer W can be coated while the wafer W is stored in the processing container 150. Coating of liquid Q and irradiation of ultraviolet rays. Therefore, the treatment from the application of the coating liquid Q to the ultraviolet irradiation can be continuously performed, and the portion can shorten the processing time. The irradiation unit 110 described in the above embodiment is provided in the upper portion of the processing container 150. However, the irradiation unit 111 may be provided on the outer surface 150a of the processing container 150 as shown in Fig. 7 . The illuminating unit 111 is provided in a direction in which ultraviolet rays can be irradiated onto the wafer W on the rotating jig 120. On the upper surface 150a, a glass plate which transmits, for example, a colorless transparent light is used. At this time, the ultraviolet ray irradiated from the illuminating unit 1 1 1 is irradiated onto the coating liquid q on the pattern P of the wafer W by the upper surface 150a, thereby forming the coating film R. Further, even if the coating liquid Q is scattered into, for example, the processing container 150, the irradiation portion is not contaminated, so that the frequency of maintenance of the irradiation portion 111 can be reduced. The irradiation units 1 1 0 and 1 1 1 described in the above embodiments are provided above the rotating jig 120. However, the irradiation unit 160 is provided at the upper portion of the loading and unloading port 151 as shown in Fig. 1-10-1355970. Also. At this time, when the coating liquid Q is applied onto the pattern P of the wafer W from the coating nozzle 130, when the first transfer arm 10 transports the wafer W from the loading/unloading port 151 of the processing container 150 to the outside, The coating liquid Q on the pattern P of the wafer W can be irradiated with ultraviolet rays by the irradiation unit 160. Therefore, application of the coating liquid Q and irradiation of ultraviolet rays can be continuously performed on the wafer W in the processing container 150, and the time from application of the coating liquid Q to ultraviolet irradiation can be shortened. The irradiation units 1 1 0, 1 1 1 and 1 60 described in the above embodiments are provided above the rotating jig 120 or at the upper portion of the loading port 151, but the irradiation unit 17G is as shown in Fig. 9, even if it is attached The coating nozzle 130 may also be used. As shown in Fig. 10, the irradiation unit 170 is attached to the coating nozzle 130 by the side surface 1 3 0 a of one of the application nozzles 130 and the side surface 1 7 0 a of one of the irradiation units 170. At this time, by adjusting the position of the upper portion of the irradiation portion 170 or the position of the upper and lower sides of the wafer W, as shown in FIG. 9, the range from the center of the wafer W to the end portion of the wafer W Η 'The coating liquid Q on the pattern P of the wafer W is irradiated with ultraviolet rays. The coating unit 24 may be provided with a control unit 340 that controls the irradiation of the ultraviolet rays from the irradiation unit 17 or the application of the coating liquid Q of the coating liquid '133 supplied to the control unit 133. . The control unit 340 controls the application of the coating liquid on the region of the wafer W from the coating nozzle 130, and then irradiates the ultraviolet ray from the irradiation portion 170 to the coating liquid Q on the region. At this time, since the self-irradiation portion 170 irradiates the wafer W with the <S) -20 - 1355970 wafer W rotated by the rotation jig 120, only the ultraviolet ray is irradiated to at least the range ,, and the entire coating liquid of the wafer W is cured. Q, the coating film R can be formed. Further, by the control of the control unit 340, the coating liquid Q applied to the pattern 晶圆 of the wafer W is cured by irradiation with ultraviolet rays after being applied to the wafer W, so that the coating liquid can be suppressed. Sublimation of Q. In place of the coating nozzle 130 described in the above embodiment, as shown in Fig. 11, a coating nozzle 140 having a slit-like discharge port 140a extending in the X direction may be used. The coating nozzle 140 is formed to have a longer width in the X direction than the wafer W as shown in Figs. 12 and 13 . The coating nozzle 140 is movable along the guide rail 136 from the standby region 141 provided on the outer side of the one end side (the left side in Fig. 13) of the cup cover 122 toward the other end side. The standby area 141 constitutes a storage nozzle 140. Further, the irradiation unit may use any of the upper irradiation units 110, 111, and 160. Even in this case, after the coating liquid 140 is applied onto the pattern P of the wafer W from the coating nozzle 140, the ultraviolet light is irradiated to the wafer W by any one of the irradiation portions 1 10, 111, and 160. The coating liquid Q on the pattern P can form the coating film R. When the coating nozzle 140 described in the above embodiment is used, the irradiation unit 190 is attached to the coating nozzle 140 even in the width direction of the wafer W in parallel with the coating nozzle 140 as shown in FIG. 14 . Also. As shown in Fig. 15, the irradiation unit 190 is connected to the side surface 190a of one of the irradiation nozzles 190, and is attached to the coating nozzle 140. Furthermore, the coating processing device 24 is provided with control even from the illumination - 21 -

1355970 間成爲一定。並且，該些照射部210、機械臂211 機構212即使如第17圖所示般多數設置亦可。菊 設置照射部210，可以更縮短對塗佈液Q照射紫夕 間。 並且，以上之塗佈處理裝置24雖然設置在塗 處理系統1之內部，但是塗佈處理裝置24獨立設 佈顯像處理系統1之外部亦可。 在以上之實施形態中，照射部1 1 0、1 1 1、1 60 210雖然設置在塗佈處理裝置24，但是照射部230 18圖所示般，即使設置在第1之搬運裝置A1亦π； 搬運裝置Α1具有框體220，在框體220之塗佈處 2 4側之.一側面形成有晶圓W之搬入出口 2 2 1。在相 內之第1處理單元群G1及第2處理單元群G2側， 圖所示般，於垂直方向設置有桿柱13、13，於桿枝 一方內藏有使第1搬運機械臂10升降之升降機構 式）。桿柱13、1 3之間，如第1 8圖所示般，設置 12，支撐部12之兩端部連接有桿柱13、13。在支 上設置旋轉軸12a，旋轉軸12a支撐有第1搬運臂 者’在支撐部12內藏有用以使傳動軸11旋轉，並 至水平方向之馬達（無圖式），第1搬運臂1〇 如’並且即使在水平方向也移動自如。並且，在框 內之上方，設置有對支撐於第1搬運臂10之晶圓 紫外線之照射部230。 此時’於以塗佈處理裝置24在晶圓W之圖案 及移動 由多數 線之時 佈顯像 置在塗 、190、 是如第 「。第1 理裝置 【體220 如第1 :13之 (無圖 支撐部 擦部12 1 0。再 且移動 旋轉自 體220 W照射 P上塗 -23- 1355970 佈塗佈液Q之後，晶圓W藉由第1搬運臂1〇，自搬入出 口 221搬運至第1搬運裝置A1內。然後，在晶圓W被支 撐於第1搬運臂10之狀態下，對該晶圓W之圖案P上之 塗佈液Q自照射部230照射紫外線，塗佈液Q硬化，其 結果，可以在線內於晶圓W之圖案p上形成塗佈膜R。 接著，針對其他實施形態予以說明。該例中之塗佈處 理裝置24是如第19圖、第20圖所示般，具備有控制後 述一連串動作之電腦程式之控制部340。控制部340構成 控制照射部1 1 0、旋轉驅動部1 2 1、供給控制裝置1 3 3、移 動機構135等。以成爲特定時間以內之方式，控制從藉由 塗佈噴嘴130完成塗佈液之塗佈，至藉由照射部1〇開始 照射紫外線爲止之時間。並且，其特定時間，於放置塗佈 塗佈液之晶圓W之時，設定成該塗佈之塗佈液昇華之量 成爲容許範圍內之時間，例如設定成2秒間。上述電腦程 式儲存於例如硬碟（HD )、軟碟（FD )、記憶卡、CD、 光磁碟（MO)、硬碟等之可讀取之記憶媒體。 搭載該實施形態所涉及之塗佈處理裝置24之塗佈顯 像處理系統1如上述般構成，接著，針對以其塗佈顯像處 理系統1所執行之晶圓處理予以說明。 與先前之例相同，首先藉由晶圓搬運體7，自匣盒載 置台5上之匣盒c取出一片在表面形成有特定圖案之晶圓 W’搬運置第3處理裝置群G3之溫度調節裝置60。被搬 運置溫度調節裝置60之晶圓W，被調節成特定溫度，之 後’被搬運置本發明所涉及之塗佈處理裝置24。在塗佈處1355970 is a must. Further, the irradiation unit 210 and the robot arm 211 mechanism 212 may be provided in many cases as shown in FIG. When the illuminating unit 210 is provided, it is possible to further shorten the irradiation of the coating liquid Q with purple. Further, although the above coating processing apparatus 24 is provided inside the coating processing system 1, the coating processing apparatus 24 may be provided separately from the outside of the developing processing system 1. In the above embodiment, the irradiation units 1 10, 1 1 1 and 1 60 210 are provided in the coating processing device 24, but the irradiation unit 230 18 is provided in the first conveying device A1 as shown in the figure. The conveying device 具有1 has a frame 220, and a loading port 2 21 of the wafer W is formed on one side of the coating portion 24 of the frame 220. On the side of the first processing unit group G1 and the second processing unit group G2 in the phase, as shown in the figure, the poles 13 and 13 are provided in the vertical direction, and the first transport robot 10 is lifted and lowered in the rod side. Lifting mechanism type). Between the poles 13, 13 and 12, as shown in Fig. 18, 12 is provided, and the rods 13, 13 are connected to both ends of the support portion 12. A rotating shaft 12a is provided on the support, and the rotating shaft 12a supports the first transport arm. A motor (not shown) for holding the drive shaft 11 in the support portion 12 and horizontally, the first transport arm 1 is provided. For example, 'and move freely even in the horizontal direction. Further, an irradiation portion 230 for ultraviolet rays of the wafer supported by the first transfer arm 10 is provided above the frame. At this time, in the coating processing apparatus 24, when the pattern of the wafer W and the movement of the wafer W are displayed by a plurality of lines, the image is applied to the coating sheet 190. The first processing device [body 220] is as follows: (There is no image supporting portion rubbing portion 12 1 0. Further, the rotating rotating body 220 W is irradiated with P coating -23-1355970 cloth coating liquid Q, and then the wafer W is transported from the loading and unloading port 221 by the first transfer arm 1〇. In the first transfer device A1, the coating liquid Q on the pattern P of the wafer W is irradiated with ultraviolet rays from the irradiation unit 230 in a state where the wafer W is supported by the first transfer arm 10, and the coating liquid is applied. Q hardening, as a result, the coating film R can be formed on the pattern p of the wafer W. Next, another embodiment will be described. The coating processing apparatus 24 in this example is as shown in Fig. 19 and Fig. 20 As shown in the figure, a control unit 340 having a computer program for controlling a series of operations described later is provided. The control unit 340 includes a control unit 1 10, a rotation drive unit 1 21, a supply control unit 133, a movement unit 135, and the like. Controlling the coating of the coating liquid from the coating nozzle 130 to a specific time or less The time until the irradiation of the ultraviolet ray is started by the illuminating unit 1 。. At the specific time, when the wafer W for applying the coating liquid is placed, the amount of sublimation of the coating liquid to be applied is set to a time within the allowable range. For example, it is set to 2 seconds. The computer program is stored in a readable memory such as a hard disk (HD), a floppy disk (FD), a memory card, a CD, a compact disk (MO), a hard disk, or the like. The coating development processing system 1 of the coating processing apparatus 24 according to the embodiment is configured as described above, and then the wafer processing performed by the coating processing system 1 is described. The same as the previous example, First, the wafer carrier 7 is used to take out a temperature adjustment device 60 that transports the third processing device group G3 on the wafer W on which a specific pattern is formed from the cassette c on the cassette mounting table 5. The wafer W of the temperature adjustment device 60 is adjusted to a specific temperature, and then the coating processing device 24 according to the present invention is transported.

&lt; S -24- 1355970 理裝置24內於後述之晶圓W之圖案上形成塗佈膜。 當在晶圓w之圖案上形成塗佈膜時，晶圓W藉由 1搬運臂10被搬運至底部塗佈裝置23，形成反射防 膜。形成有反射防止膜之晶圓W，藉由第1搬運臂10 序搬運至加熱裝置92、高溫度熱處理裝置65、高精度 度調節裝置70，在各裝置施予特定處理，之後，晶圓 被搬運至光阻塗佈裝置20。 當在光阻塗佈裝置20中，形成光阻膜時，晶圓W 由第1搬運臂10搬運至預烘烤裝置71，實施加熱處理 後，接著，藉由第2搬運臂11依序搬運至周邊曝光裝 94、高精度溫度調節裝置83，在各裝置中，施予特定 理。之後，藉由介面部4之晶圓搬運體101，搬運至曝 裝置（無圖式），特定圖案曝光於晶圓W上之光阻膜 完成曝光處理之晶圓W藉由晶圓搬運體101而被搬運 事後曝光烘烤裝置84，實施特定處理。 當完成事後曝光烘烤裝置84中之熱處理時，晶圓 藉由第2搬運臂11被搬運至高精度溫度調節裝置81而 溫度調節，之後，被搬運至顯像處理裝置30，在晶圓 上施予顯像處理，在光阻膜形成圖案。之後，晶圓W 由第2搬運臂11被搬運至後烘烤裝置75，於施予加熱 理之後，被搬運至高精度溫度調節裝置63，施予溫度 節。然後，晶圓W藉由第1搬運臂10被搬運至轉換裝 61，藉由晶圓搬運體7返回至匣盒C，完成一連串之光 影工程。 第 止 依 溫 W 藉 之 置 處 光 〇 至 W 被 W 藉 處 調 置 微 -25- 1355970 亦可以使所形成之塗佈膜R之膜厚成爲一定。 在塗佈處理裝置24內如第22圖所示般，又具備有氣 體供給部180，依此即使冷卻旋轉夾具120上之晶圓w之 周邊之環境亦可。氣體供給部180設置在處理容器150內 之上部。在氣體供給部180之下面形成有多數孔（無圖 式），從該些多數孔朝向下方供給氣體。氣體供給部180 經氣體供給管1 8 1而連接於氣體供給源1 8 2。再者，在供 給配管181設置有調整所供給之氣體之溫度及溼度之溫濕 調整裝置183。 此時，至少在晶圓W之圖案P上塗佈有塗佈液Q之 期間，或是對該所塗佈之塗佈液Q照射紫外線之期間，可 以冷卻藉由溼度調整裝置1 83自氣體供給源1 82所供給之 氣體，自氣體供給部180朝向下方之處理容器150內部供 給冷卻之氣體。其結果，冷卻至處理容器150內較常溫低 之溫度，例如15 °C。依此，冷卻塗佈在晶圓W之圖案P 上之塗佈液Q，可以更抑制塗佈液Q之昇華。 再者，使用其第22圖所示之塗佈處理裝置24，於在 晶圓W之圖案P上塗佈塗佈液Q之後，並且對該所塗佈 之塗佈液照射紫外線之前，即使將晶圓W之周邊之環境 加熱特定時間亦可。 此時，首先，藉由塗佈噴嘴130在晶圓W之圖案P 上塗佈塗佈液Q (第23圖（a))。之後，以第3圖所示 之膜厚檢査裝置9 5測量所塗佈之塗佈液Q之厚度，該測 量結果傳達至控制部3 40。在控制部3 40中，根據該測量 -28- 1355970 結果，所塗佈之塗佈液Q之厚度較特定厚度後之時，因以 塗佈液Q成爲特定厚度之方式，使塗佈液Q之一部份昇 華，故控制成使晶圓W周邊之環境加熱特定時間。具體 而言，以大厚度之變化是以加熱溫度控制，小厚度之變化 是以加熱時間來控制之方式，算出加熱溫度及時間。然 後，該加熱溫度及時間之算出結果從控制部340被傳達至 溫濕度調整裝置183，以溫濕度調整裝置183加熱自氣體 供給源182所供給之氣體。被加熱之氣體自氣體供給部 1 80被供給至處理容器1 50內，以特定時間加熱晶圓W之 周邊之環境。然後，使晶圓W之圖案P上之塗佈液Q之 一部份昇華，使塗佈液Q之厚度成爲特定厚度（第23圖 (b))。之後，在殘存於晶圓W之圖案P上之塗佈液Q 成爲特定厚度時，自照射部對所殘存之塗佈液Q照射紫外 線，使該塗佈液Q硬化（第23圖（c ))。依此，可以在 晶圓W之圖案P上形成特定膜厚之塗佈膜R。 再者，如此一來，藉由以特定時間加熱晶圓 W之周 邊的環境，亦可以使塗佈於晶圓W之圖案P之凹部份以 外之圖案P表面之塗佈液Q昇華（第24圖（a))。即 是，使形成在圖案P上之塗佈膜R之膜厚成爲零，藉由僅 在圖案P之凹部塡充塗佈液Q，予以硬化，可以消除圖案 P之凹凸而使圖案P之上面平坦化（第24圖（b))。依 此，可以省略除去晶圓W之圖案P上之塗佈膜R之蝕刻 工程，可以使晶圓W處理之產出量。 再者，例如形成在以上實施形態之塗佈膜R上的光阻 -29- 1355970 膜之圖案非所欲者時，雖然對晶圓W執行再製處理，但 是於以其再製處理剝離塗佈膜R時，即使加熱晶圓W之 周邊環境而剝離塗佈膜R亦可。 此時，首先對形成在塗佈膜R上之光阻膜之圖案V和 反射防止膜U上照射例如02電漿，剝離光阻膜之塗佈V 和反射防止膜U (第25圖（a))。然後，將晶圓W之周 邊之環境加熱至2501〜350 °C (第25圖（b))，使塗佈 膜R昇華而剝離（第25圖（c))。 針對該塗佈膜R之昇華，發明者調查結果，明白本發 明之塗佈膜R具以低分子之塗佈膜形成成分，故塗佈膜R 在25 0 °C以上之溫度分解而昇華。再者，當考慮晶圓處理 之後續工程（後端製程）之容許溫度時，以3 50°C以下之 溫度加熱爲佳。因此，使塗佈膜R之時之加熱溫度爲250 °C〜3 5 0 eC爲佳。 在以上之實施形態中，因加熱塗佈膜R而剝離，故如 以往般，不需要使用〇2電漿等，可以減輕對晶圓W上之 圖案P之損傷或消失。依此，可以改善晶圓W之再製處 理之時之良率下降。 再者，加熱以上之實施形態之塗佈膜R而予以剝離之 方法，即使於將光阻膜之圖案V當作罩幕而蝕刻晶圓W 之後，灰化殘存於圖案P上之塗佈膜R之時也爲有效。此 時，將晶圓W之周邊之環境加熱至250 °C至350 °C (第26 圖（a ))，使塗佈膜R昇華而予以剝離（第26圖 (b ))。依此，不會傷及晶圓W上之圖案p，可以灰化 -30- 1355970 殘存於圖案P上之塗佈膜R。 並且，在以上之實施形態中，使塗佈於第2 驟S3〜S5所示之晶圓W之塗佈液Q硬化之工程 塗佈液Q照射紫外線，使塗佈液Q傾向於架橋 起始劑活性化’使活性化之光聚合起始劑擴散而 液Q。 在擴散該光聚合起始劑之工程中，以100 °c -佈液，依此可以促進光聚合起始劑之擴散。如此 本實施形態中之塗佈液Q之硬化工程中，如以往 能量並非使塗佈液硬化，因以較以往之加熱溫度 °C〜1 3 0 °C之溫度加熱，以短時間使光聚合起始 較以往抑制塗佈液Q之昇華。因此，可以效率佳 液Q。 以下，藉由加熱本發明之塗佈膜，針對該塗 予以說明。在本實施例中，第21圖所說明之方 晶圓之圖案上形成大約140 nm膜厚之塗佈膜，之 °C之溫度加熱晶圓周邊之環境。 在本實施例中，將測量加熱後之塗佈膜之膜 變化的結果表示於第27圖。第27圖之縱軸表示 平均膜厚，橫軸表示加熱時間。當參照第27圖 膜之膜厚於加熱開始時，大約爲140 nm，但是 60秒則減少至大約1 0 nm。因此，可知藉由將本 佈膜以特定溫度液如3 5 0°C加熱，該塗佈膜則昇華&lt; S -24-1355970 A coating film is formed on the pattern of the wafer W to be described later in the processing device 24. When a coating film is formed on the pattern of the wafer w, the wafer W is transported to the undercoating device 23 by the transfer arm 10 to form a reflective film. The wafer W on which the anti-reflection film is formed is transported to the heating device 92, the high-temperature heat treatment device 65, and the high-accuracy adjustment device 70 by the first transfer arm 10, and a specific process is applied to each device, and thereafter, the wafer is Transfer to the photoresist coating device 20. When the photoresist film is formed in the photoresist coating device 20, the wafer W is transported by the first transfer arm 10 to the prebaking device 71, and after the heat treatment, the second transfer arm 11 is sequentially transported. The peripheral exposure unit 94 and the high-precision temperature adjustment unit 83 are given a specific principle in each apparatus. Thereafter, the wafer carrier 101 of the dielectric surface 4 is transported to an exposure device (not shown), and the wafer W having the specific pattern exposed to the photoresist film on the wafer W is exposed to the wafer W by the wafer carrier 101. On the other hand, the post-exposure baking device 84 is carried out to perform a specific process. When the heat treatment in the post-exposure baking apparatus 84 is completed, the wafer is transported to the high-precision temperature adjustment device 81 by the second transfer arm 11 to adjust the temperature, and then transported to the development processing device 30 to be applied to the wafer. Like processing, a pattern is formed on the photoresist film. Thereafter, the wafer W is transported to the post-baking device 75 by the second transfer arm 11, and after being heated, it is transported to the high-accuracy temperature adjusting device 63 to apply a temperature section. Then, the wafer W is transported to the conversion device 61 by the first transfer arm 10, and is returned to the cassette C by the wafer carrier 7, thereby completing a series of light projects. The film thickness of the coating film R formed can be made constant by the light source W to the W by the W-distribution of the micro-25- 1355970. In the coating processing apparatus 24, as shown in Fig. 22, a gas supply unit 180 is provided, and the environment around the wafer w on the rotary jig 120 can be cooled. The gas supply unit 180 is disposed at an upper portion in the processing container 150. A plurality of holes (not shown) are formed under the gas supply unit 180, and gas is supplied downward from the plurality of holes. The gas supply unit 180 is connected to the gas supply source 182 through the gas supply pipe 181. Further, the supply pipe 181 is provided with a temperature and humidity adjusting device 183 for adjusting the temperature and humidity of the supplied gas. At this time, at least the period during which the coating liquid Q is applied to the pattern P of the wafer W or the period during which the applied coating liquid Q is irradiated with ultraviolet rays can be cooled from the gas by the humidity adjusting device 1 83. The gas supplied from the supply source 182 is supplied with a cooled gas from the gas supply unit 180 toward the inside of the processing container 150. As a result, it is cooled to a temperature lower than normal temperature in the processing container 150, for example, 15 °C. Accordingly, by cooling the coating liquid Q coated on the pattern P of the wafer W, the sublimation of the coating liquid Q can be further suppressed. Further, after applying the coating liquid Q on the pattern P of the wafer W by using the coating processing apparatus 24 shown in FIG. 22, even if the applied coating liquid is irradiated with ultraviolet rays, even if The environment around the wafer W can be heated for a specific time. At this time, first, the coating liquid Q is applied onto the pattern P of the wafer W by the coating nozzle 130 (Fig. 23(a)). Thereafter, the thickness of the applied coating liquid Q is measured by the film thickness inspection device 905 shown in Fig. 3, and the measurement result is transmitted to the control unit 340. In the control unit 3 40, according to the result of the measurement -28-13575970, when the thickness of the applied coating liquid Q is larger than the specific thickness, the coating liquid Q is made to have a specific thickness. One part is sublimated, so it is controlled to heat the environment around the wafer W for a specific time. Specifically, the change in the large thickness is controlled by the heating temperature, and the change in the small thickness is controlled by the heating time to calculate the heating temperature and time. Then, the calculation result of the heating temperature and time is transmitted from the control unit 340 to the temperature and humidity adjusting device 183, and the temperature and humidity adjusting device 183 heats the gas supplied from the gas supply source 182. The heated gas is supplied from the gas supply unit 180 to the processing container 150, and the environment around the wafer W is heated for a specific time. Then, a part of the coating liquid Q on the pattern P of the wafer W is sublimated so that the thickness of the coating liquid Q becomes a specific thickness (Fig. 23(b)). After that, when the coating liquid Q remaining on the pattern P of the wafer W has a specific thickness, the coating liquid Q remaining is irradiated with ultraviolet rays from the irradiation portion to cure the coating liquid Q (Fig. 23(c) ). Accordingly, a coating film R having a specific film thickness can be formed on the pattern P of the wafer W. Furthermore, by heating the environment around the wafer W at a specific time, the coating liquid Q applied to the surface of the pattern P other than the concave portion of the pattern P of the wafer W can be sublimated ( Figure 24 (a)). In other words, the film thickness of the coating film R formed on the pattern P is made zero, and the coating liquid Q is filled only in the concave portion of the pattern P to be cured, whereby the unevenness of the pattern P can be eliminated and the pattern P can be removed. Flattening (Fig. 24(b)). Accordingly, the etching process for removing the coating film R on the pattern P of the wafer W can be omitted, and the throughput of the wafer W can be processed. Further, for example, when the pattern of the photoresist -29-1355970 film formed on the coating film R of the above embodiment is not desired, the wafer W is subjected to a re-fabrication treatment, but the coating film is peeled off by the re-fabrication treatment thereof. In the case of R, the coating film R may be peeled off even if the surrounding environment of the wafer W is heated. At this time, first, the pattern V of the photoresist film formed on the coating film R and the anti-reflection film U are irradiated with, for example, 02 plasma, and the coating V of the photoresist film and the anti-reflection film U are peeled off (Fig. 25 (a )). Then, the environment around the wafer W is heated to 2501 to 350 °C (Fig. 25(b)), and the coating film R is sublimated and peeled off (Fig. 25(c)). As a result of investigation by the inventors of the present invention, it has been found that the coating film R of the present invention has a low molecular weight coating film forming component, so that the coating film R is decomposed and sublimated at a temperature of 25 ° C or higher. Further, when considering the allowable temperature of the subsequent processing (back-end process) of the wafer processing, it is preferable to heat at a temperature of 3 50 ° C or lower. Therefore, the heating temperature at the time of coating the film R is preferably from 250 ° C to 3 5 0 eC. In the above embodiment, since the coating film R is peeled off by heating, it is not necessary to use 〇2 plasma or the like as in the related art, and damage or disappearance of the pattern P on the wafer W can be reduced. Accordingly, it is possible to improve the yield reduction of the wafer W when it is processed. Further, by heating the coating film R of the above embodiment and peeling it off, even after the wafer W is etched by using the pattern V of the photoresist film as a mask, the coating film remaining on the pattern P is ashed. The time of R is also valid. At this time, the environment around the wafer W is heated to 250 ° C to 350 ° C (Fig. 26 (a)), and the coating film R is sublimated and peeled off (Fig. 26 (b)). Accordingly, the pattern p on the wafer W is not damaged, and the coating film R remaining on the pattern P can be ashed by -30-1355970. Further, in the above embodiment, the coating liquid Q applied to the coating liquid Q coated on the wafer W shown in the second step S3 to S5 is irradiated with ultraviolet rays to cause the coating liquid Q to tend to bridge. The agent is activated to diffuse the activated photopolymerization initiator to the liquid Q. In the process of diffusing the photopolymerization initiator, the dispersion of the photopolymerization initiator can be promoted at 100 °c - cloth. In the hardening process of the coating liquid Q in the present embodiment, the conventional energy does not cure the coating liquid, and the photopolymerization is carried out in a short time by heating at a temperature higher than the conventional heating temperature of ° C to 130 ° C. The sublimation of the coating liquid Q is suppressed from the beginning. Therefore, it is possible to be efficient in liquid Q. Hereinafter, the coating film will be described by heating the coating film of the present invention. In the present embodiment, a coating film having a film thickness of about 140 nm is formed on the pattern of the square wafer described in Fig. 21, and the temperature of °C heats the environment around the wafer. In the present embodiment, the result of measuring the film change of the coated film after heating is shown in Fig. 27. In Fig. 27, the vertical axis represents the average film thickness, and the horizontal axis represents the heating time. When referring to Figure 27, the film thickness is about 140 nm at the beginning of heating, but it is reduced to about 10 nm in 60 seconds. Therefore, it is understood that the coating film is sublimated by heating the film at a specific temperature such as 350 ° C.

並且，在以上之實施形態所形成之塗佈膜R -31 -Further, the coating film R-31 formed in the above embodiment is -

1圖之步 ，藉由對 之光聚合 硬化塗佈 - 1 3 0 〇C 塗 一來，在 般，加熱 低之100 劑擴散， 硬化塗佈 佈膜昇華 法中，在 後以3 5 0 厚之經時 塗佈膜之 時，塗佈 經過大約 發明之塗 r 〇 即使爲用 &lt; S 1355970 以在晶圓W形成圖案P之光阻膜亦可。如此所形成之塗 佈膜R可以當作光阻膜使用，可以省略形成以往之光阻膜 之工程。 以上，雖然一面參照附件圖面一面針對本發明之較佳 實施形態予以說明，但是本發明並不限定於該些例。若爲 該項技藝者應可在申請專利範圍之思想的範疇內，想出各 種變更例或者修正例。即使針對該些當然屬於本發明之技 術範圍。本發明不限於該例，可採用各種態樣。本發明基 板亦可適用於晶圓以外之FPD (平面顯示器）、光罩用之 罩幕標線板等之其他基板之時。 本發明有效利用於在形成於基板之圖案上形成塗佈膜 之時。 【圖式簡單說明】 第1圖爲模式性表示搭載本實施形態所涉及之塗佈處 理裝置之塗佈顯像處理系統之構成槪略的平面圖。 第2圖爲本實施形態所涉及之塗佈顯像處理系統之正 面圖。 第3圖爲本實施形態所涉及之塗佈顯像處理系統之背 面圖。 第4圖爲模式性表示本實施形態所涉及之塗佈處理裝 置之構成的槪略的縱剖面圖》 第5圖爲模式性表示本實施形態所涉及之塗佈處理裝 置之構成之槪略的平面圖。1 step, by photopolymerization hardening coating - 1 30 〇C coating, in general, heating 100% of the diffusion, hardening coating film sublimation method, after the thickness of 305 When the film is coated over time, the coating may be applied to the coating film of the invention, even if it is a photoresist film having a pattern P formed on the wafer W by &lt;S 1355970. The coating film R thus formed can be used as a photoresist film, and the process of forming a conventional photoresist film can be omitted. Although the preferred embodiments of the present invention have been described above with reference to the attached drawings, the present invention is not limited to the examples. If the artist is concerned, he or she should be able to come up with various changes or amendments within the scope of the idea of applying for a patent. Even for these, of course, it belongs to the technical scope of the present invention. The present invention is not limited to this example, and various aspects can be employed. The substrate of the present invention can also be applied to other substrates such as FPD (flat display) other than wafers, mask reticle for photomasks, and the like. The present invention is effective for use in forming a coating film on a pattern formed on a substrate. [Brief Description of the Drawings] Fig. 1 is a plan view schematically showing the configuration of a coating development processing system in which the coating processing apparatus according to the present embodiment is mounted. Fig. 2 is a front elevational view showing a coating development processing system according to the embodiment. Fig. 3 is a rear elevational view of the coating development processing system according to the embodiment. 4 is a schematic longitudinal cross-sectional view showing a configuration of a coating processing apparatus according to the present embodiment. FIG. 5 is a schematic view showing a configuration of a coating processing apparatus according to the present embodiment. Floor plan.

&lt; S -32- 1355970 第6圖爲表示形成在本實施形態所涉及之晶圓之圖案 上之塗佈膜之狀態的說明圖，（a )爲表示照射紫外線之 前的狀態，（b )爲表示照射紫外線之後的狀態。 第7圖爲模式性表示其他形態所涉及之塗佈處理裝置 之構成之槪略的縱剖面圖。 第8圖爲模式性表示其他形態所涉及之塗佈處理裝置 之構成之槪略的縱剖面圖。 第9圖爲模式性表示其他形態所涉及之塗佈處理裝置 之構成之槪略的縱剖面圖。 第1 0圖爲照射部附設於塗佈噴嘴之時的斜視圖。 第11圖爲具有縫隙狀之吐出口的塗佈噴嘴之斜視 圖。 第1 2圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成之槪略的縱剖面圖。 第1 3圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成之槪略的平面圖。 第14圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成之槪略的平面圖。 第1 5圖爲照射部附設於塗佈噴嘴之時的斜視圖。 第1 6圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成的槪略的平面圖。 第17圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成的槪略的平面圖。 第1 8圖爲模式性表示其他形態所涉及之塗佈處理裝 -33- 1355970 置及搬運裝置之構成槪略的縱剖面圖。 第19圖爲模式性表示其他實施形態所涉及之塗佈處 理裝置之構成槪略的縱剖面圖。 第20圖爲模式性表示其他實施形態所涉及之塗佈處 理裝置之構成槪略的平面圖。 第21圖爲表示其他實施形態所涉及之塗佈膜之形成 方法之流程圖。 第22圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成槪略的縱剖面圖。 第23圖爲模式性表示其他形態所涉及之塗佈膜形成 在晶圓上爲止之塗佈液之狀態的作用說明圖，（a)表示 塗佈塗佈液之後的狀態，（b )爲表示之後加熱之狀態， (c)爲表示加熱後照射紫外線之狀態。 第24圖爲模式性表不其他形態所涉及之塗佈膜形成 在晶圓上爲止之塗佈液之狀態的作用說明圖，（a)表示 藉由加熱使所有塗佈液昇華之狀態，（b)爲表示之後塡 充塗佈液而硬化之狀態。 第25圖爲表示於再製處理之時，表示晶圓之圖案上 之塗佈膜和光阻膜剝離之樣子的作用說明圖，（a )表示 藉由電漿之照射剝離光阻膜和反射防止膜之狀態，（b ) 爲表示加熱晶圓周邊環境之狀態，（c)爲表示使塗佈膜 昇華而剝離之狀態。 第26圖爲表示使晶圓之圖案上之塗佈膜灰化之樣子 的作用說明圖，（a)爲表示加熱之狀態，爲表示使 -34- 1355970 塗佈膜昇華而剝離之狀態。 第27圖爲表不以350C加熱晶圓之圖案上之塗佈膜之 時的膜厚之經時變化的曲線圖。 第28圖爲表示形成在以往之晶圓之圖案上之塗佈膜 之狀態的說明圖。 【主要元件符號說明】 1 :塗佈顯像處理系統 2 :匣盒台 3 :處理台 4 :介面部 5 :匣盒載置台 6 :搬運路 7 :晶圓搬運體 10 :第1搬運臂 1 1 :第2搬運臂 12 :支撐部 12a :旋轉軸 1 3 :桿柱 20 :光阻塗佈裝置 2 1 :光阻塗佈裝置 22 :光阻塗佈裝置 2 3 :底部塗佈裝置 24 :塗佈處理裝置 -35- 30-1355970 40 : 41 : 60 : 61 : 62〜 65〜&lt;S-32- 1355970 Fig. 6 is an explanatory view showing a state of a coating film formed on the pattern of the wafer according to the embodiment, wherein (a) is a state before ultraviolet irradiation, and (b) is Indicates the state after the ultraviolet ray is irradiated. Fig. 7 is a schematic longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 8 is a schematic longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 9 is a schematic longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 10 is a perspective view showing the irradiation unit attached to the coating nozzle. Fig. 11 is a perspective view of a coating nozzle having a slit-like discharge port. Fig. 1 is a schematic longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 13 is a schematic plan view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 14 is a plan view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 15 is a perspective view showing the irradiation unit attached to the coating nozzle. Fig. 16 is a schematic plan view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 17 is a schematic plan view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 18 is a longitudinal cross-sectional view schematically showing a configuration of a coating processing apparatus according to another embodiment. Fig. 19 is a vertical cross-sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 20 is a plan view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 21 is a flow chart showing a method of forming a coating film according to another embodiment. Fig. 22 is a longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. FIG. 23 is an operation explanatory view schematically showing a state of a coating liquid formed on a wafer by a coating film according to another embodiment, wherein (a) shows a state after application of the coating liquid, and (b) shows After heating, (c) is a state in which ultraviolet rays are irradiated after heating. Fig. 24 is a view for explaining the action of the state of the coating liquid formed on the wafer by the coating film according to the mode, and (a) shows the state in which all the coating liquids are sublimated by heating ( b) is a state in which the coating liquid is hardened after being filled. Fig. 25 is a view showing the action of the peeling of the coating film and the photoresist film on the pattern of the wafer at the time of the rework process, and (a) shows the peeling of the photoresist film and the anti-reflection film by irradiation of the plasma. In the state, (b) is a state in which the environment around the wafer is heated, and (c) is a state in which the coating film is sublimated and peeled off. Fig. 26 is an operation explanatory view showing a state in which the coating film on the pattern of the wafer is ashed, and (a) shows a state in which the coating film is sublimated and peeled off in a state of heating. Fig. 27 is a graph showing the temporal change of the film thickness when the coating film on the pattern of the wafer is not heated by 350C. Fig. 28 is an explanatory view showing a state of a coating film formed on a pattern of a conventional wafer. [Description of main component symbols] 1 : Coating development processing system 2 : cassette table 3 : processing table 4 : interface surface 5 : cassette mounting table 6 : conveying path 7 : wafer carrier 10 : first carrying arm 1 1 : 2nd transfer arm 12 : support part 12a : rotation shaft 1 3 : pole 20: photoresist coating apparatus 2 1 : photoresist coating apparatus 22: photoresist coating apparatus 2 3 : bottom coating apparatus 24 : Coating treatment device -35- 30-1355970 40 : 41 : 60 : 61 : 62~ 65~

75〜 80〜 84〜 90 ： 91 : 92 ： 93 ：75~ 80~ 84~ 90 : 91 : 92 : 93 :

95 ： 100 10 1 102 110 120 12 1 122 • 3 4 :顯像處理裝置 化學室 化學室 溫度調節裝置 轉換裝置 64 :高精度溫度調節裝置 68:高溫度熱處理裝置 74 :預烘烤裝置 79 :後烘烤裝置 83:高精度溫度調節裝置 8 9 =事後曝光烘烤裝置 附著裝置 附著裝置 加熱裝置 加熱裝置 周邊曝光裝置 膜厚檢查裝置 :搬運路 :晶圓搬運體 :緩衝匣盒 :照射部 :旋轉夾具 =旋轉驅動部 :杯罩體 -36- 1355970 1 2 3 :排液口 124 :排液管 1 30 :塗佈噴嘴 131 :塗佈液供給管 132 :塗佈液供給源 1 3 3 :供給控制裝置 1 3 4 :機械臂 135 :移動機構 136 :導軌 1 3 7 :待機區域 140 :塗佈噴嘴 140a ：吐出口 1 4 1 :待機區域 150 :處理容器 151 :搬入出口 1 5 2 :開關快門 170 :照射部 1 8 0 :氣體供給部 1 8 1 :氣體供給管 182 :氣體供給源 183 :溫溼度調整裝置 190 :照射部 2 0 0 :控制部 21 1 :機械臂 -37- 1355970 212 :移動機構 2 1 3 :待機區域 220 :框體 221 :搬入出口 2 3 0 :照射部 3 4 0 :控制部95 : 100 10 1 102 110 120 12 1 122 • 3 4 : Development processing device chemical chamber chemical chamber temperature adjustment device conversion device 64 : high precision temperature adjustment device 68 : high temperature heat treatment device 74 : prebaking device 79 : after Baking device 83: High-precision temperature adjusting device 8 9 = Post-exposure exposure baking device Attaching device Attaching device Heating device Heating device Peripheral exposure device Film thickness inspection device: Transport path: Wafer carrier: Buffer cassette: Irradiation unit: Rotation Jig = Rotary drive unit: Cup cover - 36 - 1355970 1 2 3 : Drain port 124 : Drain pipe 1 30 : Coating nozzle 131 : Coating liquid supply pipe 132 : Coating liquid supply source 1 3 3 : Supply Control device 1 3 4 : Robot arm 135 : Moving mechanism 136 : Guide rail 1 3 7 : Standby area 140 : Coating nozzle 140a : Discharge port 1 4 1 : Standby area 150 : Processing container 151 : Carrying in port 1 5 2 : Switching shutter 170 : Irradiation unit 1 80 0 : Gas supply unit 1 8 1 : Gas supply tube 182 : Gas supply source 183 : Temperature and humidity adjustment device 190 : Irradiation unit 2 0 0 : Control unit 21 1 : Robot arm - 37 - 1355970 212 : Moving mechanism 2 1 3 : standby area 220 : frame 221 : Move in the exit 2 3 0 : Irradiation unit 3 4 0 : Control unit

G1〜G5 :處理裝置群 A1 :第1搬運裝置 A2 :第2搬運裝置 W :晶圓 C :匣盒G1 to G5: processing device group A1: first conveying device A2: second conveying device W: wafer C: cassette

-38- (S )-38- (S )

Claims (1)

1355970 1來6#8時一作C貞j 第097101387號專利申請案中文申請專利範圍修正本 民國100年6月28日修正 十、申請專利範園 1. 一種塗佈處理裝置，係在形成於基板之圖案上形成 塗佈膜，其特徵爲： 形成上述塗佈膜之塗佈液包含液體狀之塗佈膜形成成 份和溶劑，上述塗佈膜形成成份含有光聚合起始劑， 該塗佈處理裝置具有： 處理容器，具有用以將基板搬入搬出之搬入出口，而 收容基板； 塗佈噴嘴，在收容於上述處理容器內之基板的圖案 上，塗佈含有液體狀之塗佈膜形成成份之塗佈液·，和 照射部，對塗佈於上述基板之圖案上之塗佈液照射紫 外線之照射部。 2·如申請專利範圍第1項所記載之塗佈處理裝置，其 中，上述照射部設置在上述處理容器之上部。 3.如申請專利範圍第1項所記載之塗佈處理裝置，其 中’上述照射部設置在上述搬入出口之上部。 4·如申請專利範圍第1項所記載之塗佈處理裝置，其 中’在上述處理容器內具有保持基板之旋轉自如之旋轉夾 具， 藉由上述照射部對基板之圖案上之塗佈液照射紫外線 之範圍，爲從基板之中心至基板之端部爲止之區域以上^ 5 _如申請專利範圍第4項所記載之塗佈處理裝置，其 1355970 i__—I—--* 中，上述照射部附設在上述塗佈噴嘴。 6·如申請專利範圍第1項所記載之塗佈處理裝置，其 中，上述塗佈噴嘴爲具有延伸於基板之寬方向之縫隙狀之 吐出口的噴嘴， 上述照射部具有與上述塗佈噴嘴平行延伸於基板之寬 方向之形態，與上述塗佈噴嘴同步移動。 7. 如申請專利範圍第6項所記載之塗佈處理裝置，其 中，上述照射部附設在上述塗佈噴嘴。 8. 如申請專利範圍第6項所記載之塗佈處理裝置，其 中，上述塗佈噴嘴和上述照射部具有獨立之移動機構。 9. 如申請專利範圍第6項所記載之塗佈處理裝置，其 中，上述照射部爲多數設置。 1 0.如申請專利範圍第4項所記載之塗佈處理裝置， 其中，具有控制成對自上述塗佈噴嘴將塗佈液塗佈在基板 區域上之後的該區域上之塗佈液，緊接著自上述照射部照 射紫外線的控制部。 Π.—種基板處理系統，具有在形成於基板之圖案上 塗佈塗佈液之塗佈處理裝置，和將基板搬入搬出至上述塗 佈處理裝置之搬運裝置，其特徵爲： 上述塗佈液包含液體狀之塗佈膜形成成份和溶劑，上 述塗佈膜形成成份含有光聚合起始劑， 上述搬運裝置具有支撐基板而予以搬運之搬運臂，和 對以上述搬運臂所支撐之基板，將紫外線照射至該基板之 圖案上之塗佈液的照射部。 S -2- 1355970 ν·Ρ 12.—種塗佈處理方法，在形成於基板之圖案上形成 塗佈膜，其特徵爲： 形成上述塗佈膜之塗佈液包含液體狀之塗佈膜形成成 份和溶劑，上述塗佈膜形成成份含有光聚合起始劑，具有 在基板之圖案上塗佈上述塗佈液之塗佈工程；和 對塗佈於上述基板之圖案上之塗佈液照射紫外線，使 上述光聚合起始劑活性化而形成塗佈膜之照射工程。 1 3 .如申請專利範圍第1 2項所記載之塗佈處理方法， 其中，將從完成上述塗佈工程至開始上述照射工程爲止之 時間，控制成事先所預定之時間以內。 14.如申請專利範圍第12項所記載之塗佈處理方法， 其中，在基板面內之所有區域，控制成從在上述塗佈工程 中塗佈塗佈液至在上述照射工程中照射紫外線爲止之時間 成爲一定。 1 5 .如申請專利範圍第1 2項所記載之塗佈處理方法， 其中，對將塗佈液塗佈於基板之區域上之後的該區域上之 塗佈液，緊接著執行上述照射工程中之紫外線之照射。 1 6 .如申請專利範圍第1 2項所記載之塗佈處理方法， 其中，上述塗佈工程及/或上述照射工程係冷卻基板周邊 之環境而被執行。 1 7.如申請專利範圍第1 2項所記載之塗佈處理方法， 其中，於上述塗佈工程之後，並且上述照射工程之前，具 有以特定時間加熱基板周邊之環境，使塗佈於上述基板之 圖案上之塗佈液昇華至成爲特定厚度爲止之加熱工程》 -3- 1355970 、 1M：6；2'8.....1 I 年 4 U 慘 18. 如申請專利範圍第12項所記載之塗佈處理方法， 其中，於上述照射工程之後，具有以特定時間加熱基板周 邊之環境，使形成在上述基板之圖案上之塗佈膜昇華之加 熱工程。 19. 如申請專利範圍第12項所記載之塗佈處理方法， 其中，上述塗佈膜爲用以在基板形成圖案之光阻膜。 2 0.—種可讀取之電腦記憶媒體，爲了藉由塗佈處理 裝置或是基板處理系統實行將塗佈膜形成在形成於基板之 圖案上之塗佈處理方法，儲存有控制該塗佈處理裝置或基 板處理系統之控制部之電腦上動作的程式，其特徵爲： 形成上述塗佈膜之塗佈液包含液體狀之塗佈膜形成成 份和溶劑，上述塗佈膜形成成份含有光聚合起始劑， 上述塗佈處理方法具有將上述塗佈液塗佈於基板圖案 上之塗佈工程，和對塗佈於上述基板之圖案上之塗佈液照 射紫外線，使上述光聚合起始劑活性化而形成塗佈膜之照 射工程。 S -4-1355970 1来六#8一一作C贞j Patent Application No. 097101387 Patent Application Revision of the Chinese Patent Application Revision of the Republic of China on June 28, 100. Application for Patent Fan Park 1. A coating processing device is formed on a substrate A coating film is formed on the pattern, wherein the coating liquid for forming the coating film comprises a liquid coating film forming component and a solvent, and the coating film forming component contains a photopolymerization initiator, and the coating treatment The apparatus includes: a processing container having a loading and unloading port for loading and unloading the substrate, and accommodating the substrate; and a coating nozzle for applying a coating film containing a liquid to the pattern of the substrate housed in the processing container The coating liquid and the irradiation unit irradiate the coating liquid applied to the pattern of the substrate with an ultraviolet irradiation unit. The coating processing apparatus according to claim 1, wherein the irradiation unit is provided on an upper portion of the processing container. 3. The coating processing apparatus according to claim 1, wherein the irradiation unit is provided at an upper portion of the loading/outlet. 4. The coating processing apparatus according to the first aspect of the invention, wherein the processing container has a rotating jig for holding the substrate, and the coating liquid on the pattern of the substrate is irradiated with ultraviolet rays by the irradiation unit. The range is from the center of the substrate to the end of the substrate. The coating processing apparatus according to the fourth aspect of the patent application, in the 1355970 i__-I---*, the irradiation unit is attached. In the above coating nozzle. The coating processing apparatus according to the first aspect of the invention, wherein the coating nozzle is a nozzle having a slit-shaped discharge port extending in a width direction of the substrate, wherein the irradiation portion has a parallel to the coating nozzle The form extending in the width direction of the substrate moves in synchronization with the coating nozzle. 7. The coating processing apparatus according to claim 6, wherein the irradiation unit is attached to the coating nozzle. 8. The coating processing apparatus according to claim 6, wherein the coating nozzle and the irradiation unit have independent moving mechanisms. 9. The coating processing apparatus according to claim 6, wherein the irradiation unit is provided in a plurality of places. The coating processing apparatus according to claim 4, wherein the coating liquid is controlled to be applied to the region after the coating liquid is applied to the substrate region from the coating nozzle, Next, the control unit that irradiates the ultraviolet ray from the irradiation unit is irradiated. A substrate processing system comprising: a coating processing apparatus that applies a coating liquid on a pattern formed on a substrate; and a conveying apparatus that carries the substrate into and out of the coating processing apparatus, wherein the coating liquid a coating film forming component and a solvent containing a liquid, wherein the coating film forming component contains a photopolymerization initiator; and the conveying device has a transfer arm that supports the substrate and is transported, and a substrate supported by the transfer arm The ultraviolet ray is irradiated to the irradiation portion of the coating liquid on the pattern of the substrate. S -2- 1355970 ν·Ρ 12. A coating treatment method for forming a coating film on a pattern formed on a substrate, wherein the coating liquid for forming the coating film comprises a liquid coating film. a component and a solvent, wherein the coating film forming component contains a photopolymerization initiator, and has a coating process of coating the coating liquid on a pattern of the substrate; and irradiating the coating liquid coated on the pattern of the substrate with ultraviolet rays An irradiation process in which the photopolymerization initiator is activated to form a coating film. The coating treatment method according to claim 12, wherein the time from completion of the coating process to the start of the irradiation process is controlled to be within a predetermined time. The coating treatment method according to claim 12, wherein all of the regions in the surface of the substrate are controlled so as to apply the coating liquid from the coating process to the ultraviolet irradiation in the irradiation project. The time is certain. The coating treatment method according to claim 12, wherein the coating liquid on the region after the coating liquid is applied to the region of the substrate is subsequently subjected to the irradiation operation described above. Irradiation of ultraviolet light. The coating treatment method according to claim 12, wherein the coating process and/or the irradiation process is performed by cooling an environment around the substrate. The coating treatment method according to the first aspect of the invention, wherein after the coating process and before the irradiation process, the environment around the substrate is heated for a specific time to be applied to the substrate. The heating liquid on the pattern is sublimated to a specific thickness. -3- 1355970, 1M:6; 2'8.....1 I Year 4 U Miserable 18. As in the 12th article of the patent application In the coating treatment method described above, after the irradiation process, the heating process is performed by heating the environment around the substrate at a specific time to sublimate the coating film formed on the pattern of the substrate. 19. The coating treatment method according to claim 12, wherein the coating film is a photoresist film for forming a pattern on a substrate. A computer memory medium that can be read, in order to perform a coating processing method for forming a coating film on a pattern formed on a substrate by a coating processing device or a substrate processing system, storing and controlling the coating A program for operating on a computer of a control unit or a control unit of a substrate processing system, wherein the coating liquid for forming the coating film contains a liquid coating film forming component and a solvent, and the coating film forming component contains photopolymerization The coating agent has a coating process for applying the coating liquid onto a substrate pattern, and irradiating the coating liquid applied to the pattern of the substrate with ultraviolet rays to cause the photopolymerization initiator The irradiation process of forming a coating film by activation. S -4-
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