TW200916200A - Coating treatment apparatus, substrate treatment system, coating treatment method, and computer storage medium - Google Patents

Coating treatment apparatus, substrate treatment system, coating treatment method, and computer storage medium Download PDF

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Publication number
TW200916200A
TW200916200A TW097101387A TW97101387A TW200916200A TW 200916200 A TW200916200 A TW 200916200A TW 097101387 A TW097101387 A TW 097101387A TW 97101387 A TW97101387 A TW 97101387A TW 200916200 A TW200916200 A TW 200916200A
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TW
Taiwan
Prior art keywords
coating
substrate
pattern
wafer
coating liquid
Prior art date
Application number
TW097101387A
Other languages
Chinese (zh)
Other versions
TWI355970B (en
Inventor
Makoto Muramatsu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from JP2007010179A external-priority patent/JP4884991B2/en
Priority claimed from JP2007147694A external-priority patent/JP4950771B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200916200A publication Critical patent/TW200916200A/en
Application granted granted Critical
Publication of TWI355970B publication Critical patent/TWI355970B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
    • B05B1/04—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape in flat form, e.g. fan-like, sheet-like
    • B05B1/044—Slits, i.e. narrow openings defined by two straight and parallel lips; Elongated outlets for producing very wide discharges, e.g. fluid curtains
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/023—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface
    • B05C11/028—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface with a body having a large flat spreading or distributing surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Materials For Photolithography (AREA)

Abstract

In the present invention, a spin chuck which horizontally holds a substrate by vacuum suction is provided inside a treatment container of a coating treatment apparatus. Above the spin chuck, a coating nozzle is located for applying a coating solution containing a coating film forming component in the liquid state onto the central portion of the surface of the substrate. In an upper portion of the treatment container, an irradiation unit is provided which applies ultraviolet rays to the substrate on the spin chuck. After applying the coating solution onto the pattern on the substrate from the coating nozzle, ultraviolet rays are applied from the irradiation unit to the applied coating solution to form a coating film.

Description

200916200 九、發明說明 【發明所屬之技術領域】 本發明是關於在形成於基板之圖案上形成塗佈膜之塗 佈處理裝置、基板處理系統、塗佈處理方法及電腦記憶媒 體。 【先前技術】 例如在多層配線構造之半導體裝置之製造工程中，依 序執行例如在半導體晶圓（以下稱爲「晶圓」）上塗佈光 阻液而形成光阻膜之光阻塗佈處理、在該光阻膜曝光特定 圖案之曝光處理、將所曝光之光阻膜予以顯像之顯像處理 等，在晶圓上形成特定光阻圖案。將該光阻圖案當作罩 幕，執行晶圓之蝕刻處理，之後執行光阻膜之除去處理 等，在晶圓上形成特定圖案。如此一來，在特定層形成特 定圖案之工程通常重複執行20〜30次左右，製造多層配 線構造之半導體裝置。 但是，如此一來，重複在晶圓上形成特定之圖案之 時，於第η層形成特定圖案之後，爲了將（n+l)層之光 阻膜形成適當高度’必須使塗佈光阻液之面平坦。 在此，自以往，在晶圓之特定圖案上形成塗佈膜，執 行使該表面平坦化。如此之塗佈膜之形成，是在晶圓之特 定圖案上塗佈具有例如固體狀之塗佈膜形成成分和溶劑之 塗佈液，藉由加熱該被塗佈之塗佈液而使硬化而執行。作 爲該塗佈液’使用例如SOG(SPin 0n Glass)材料（大橋 200916200 直史著作「對於多層配線構造之SOG製程 情報通訊學會論文誌C-II Vol. J78-C-II No.: 但是，如第2 8圖所示般，如此以往的 於晶圓W之特定圖案P上之時，因塗佈液 塗佈膜形成成分之流動性差，故塗佈液無法 W之特定圖案P之凹凸上。其結果，形成有 之區域S中，較無形成圖案p之穴Η之區域 凹陷，產生塗佈膜R之高度不同之所謂階差 之塗佈膜R之表面不平坦化，有即使在形成 上之光阻膜也產生階差之問題。 【發明內容】 本發明是鑒於如此之點所創作出者，以 基板之特定圖案上形成塗佈膜，使該塗佈膜 爲目的。 爲了達成上述目的，本發明爲提供一種 之圖案上形成塗佈膜的塗佈處理裝置，具有 具有用以將基板搬入搬出之搬入出口，而收 噴嘴，在收容於上述處理容器內之基板的圖 有液體狀之塗佈膜形成成份之塗佈液；和照 於上述基板之圖案上之塗佈液照射紫外線之丨 若藉由本發明之塗佈處理裝置，基板被 器內之後，當藉由塗佈噴嘴，在基板之圖案 體狀之塗佈膜形成成分時，因該塗佈液所含BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating processing apparatus, a substrate processing system, a coating processing method, and a computer memory medium for forming a coating film on a pattern formed on a substrate. [Prior Art] For example, in the manufacturing process of a semiconductor device having a multilayer wiring structure, photoresist coating for forming a photoresist film by applying a photoresist liquid on a semiconductor wafer (hereinafter referred to as "wafer") is sequentially performed. A specific photoresist pattern is formed on the wafer by treatment, exposure processing for exposing a specific pattern to the photoresist film, development processing for developing the exposed photoresist film, and the like. The photoresist pattern is used as a mask, and etching processing of the wafer is performed, and then removal processing of the photoresist film is performed to form a specific pattern on the wafer. As a result, the process of forming a specific pattern in a specific layer is usually repeated 20 to 30 times to manufacture a semiconductor device having a multilayer wiring structure. However, in this case, when a specific pattern is formed on the wafer, after the specific pattern is formed on the nth layer, in order to form the (n+1) layer of the photoresist film at an appropriate height, it is necessary to apply the photoresist solution. The face is flat. Here, conventionally, a coating film is formed on a specific pattern of a wafer, and the surface is flattened. Such a coating film is formed by applying a coating liquid having, for example, a solid coating film forming component and a solvent to a specific pattern of a wafer, and curing by applying the applied coating liquid. carried out. As the coating liquid, for example, SOG (SPin 0n Glass) material is used (the bridge 200916200 direct history book "The SOG Process Information Communication Society Papers on Multilayer Wiring Structure C-II Vol. J78-C-II No.: However, as in the first As shown in FIG. 2, when the conventional pattern P on the wafer W is conventionally used, the fluidity of the coating liquid coating film forming component is poor, so that the coating liquid cannot be formed on the unevenness of the specific pattern P. As a result, in the region S formed, the region of the coating film R which is less than the pattern p is formed, and the surface of the coating film R which has a so-called step difference in the height of the coating film R is uneven, even if it is formed. The present invention has been made in view of such a point that a coating film is formed on a specific pattern of a substrate to achieve the above object. The present invention provides a coating processing apparatus for forming a coating film on a pattern, comprising a loading inlet for loading and unloading a substrate, and a nozzle for receiving a liquid in a substrate accommodated in the processing container. Film formation a portion of the coating liquid; and the coating liquid on the pattern of the substrate is irradiated with ultraviolet rays. If the substrate is placed in the apparatus by the coating processing apparatus of the present invention, the pattern pattern on the substrate is coated by the nozzle. When the coating film is formed into a component, it is contained in the coating liquid

的改良」電氣 丨1 995年）。 塗佈液被塗佈 中之固體狀之 圚滑擴散晶圓 圖案Ρ之穴Η Τ，塗佈膜R 。因此，以往 於該塗佈膜R 對於在形成於 之表面平坦化 在形成於基板 :處理容器， 容基板；塗佈 案上，塗佈含 射部，對塗佈 孩射部。 搬運至處理容 上塗佈含有液 之液體狀之塗 -5- 200916200 佈膜形成成分之離動性佳，故塗佈液可以圚滑擴散基板之 圖案之凹凸上。因此，形成在基板之圖案上之塗佈膜不會 產生階差，可以使塗佈膜之表面平坦化。 再者，在此塗佈於該基板之圖案上之塗佈液所含之液 體狀之塗佈膜形成成分爲低分子，因各個分子結合，故具 有容易昇華之性質。當加熱該塗佈膜形成成分時，塗佈液 更容易昇華。以往之塗佈膜因藉由加熱塗佈液使塗佈液硬 化而形成，故於使用具有液體狀之塗佈形成成分之塗佈液 時，於使塗佈液硬化之時，塗佈液則昇華。但是，若藉由 本發明之照射部時，則對塗佈於基板之圖案上之塗佈液照 射紫外線，使塗佈液硬化，而在基板之圖案上形成塗佈 膜，故不需要加熱塗佈液，可以較以往抑制塗佈液之昇 華。因此，可以抑制所形成之塗佈膜之膜厚之減少。 上述照射部即使設置在上述處理容器之上部亦可。藉 由該照射部，對被收容於處理容器內之基板，因可以照射 紫外線，故在基板被收容於處理容器內之狀態下，可以對 該基板執行塗佈液之塗佈和紫外線之照射。因此，可以連 續執行從塗佈液之塗佈至紫外線之照射爲止之處理，其部 份可以縮短處理時間。 上述照射部即使設置在上述搬入出口之上部亦可。藉 由該照射部，於基板之圖案上塗佈塗佈液之後’自處理容 器之搬入出口將基板搬運至外部之時，則可以對基板之圖 案上之塗佈液照射紫外線。 在上述處理容器內具有保持基板之旋轉自如之旋轉夾 -6 - 200916200 具，藉由上述照射部對基板之圖案上之塗佈液照射紫外線 之範圍，即使爲從基板之中心至基板之端部爲止之區域以 上亦可。如此一來，當對藉由旋轉夾具旋轉之基板照射紫 外線時，僅以將紫外線至少照射至基板中心至基板端部之 範圍，則可以在基板全面形成塗佈膜。並且，此時，上述 照射部即使附設於上述塗佈噴嘴亦可。 上述塗佈噴嘴爲具有延伸於基板之寬方向之縫隙狀之 吐出口的噴嘴，上述照射部即使具有與上述塗佈噴嘴平行 延伸於基板之寬方向之形態，與上述塗佈噴嘴同步移動亦 可。如此一來，藉由塗佈噴嘴與照射部同步而移動，在基 板面內之全區域中，可以控制成從塗佈塗佈液至照射紫外 線爲止之時間成爲一定。並且，此時，即使上述照射部附 設於上述塗佈噴嘴亦可。再者，上述塗佈噴嘴和上述照射 部即使具有獨立之移動機構亦可，上述照射部即使多數設 置亦可。 上述塗佈處理裝置即使具有控制成對自上述塗佈噴嘴 將塗佈液塗佈在基板區域上之後的該區域上之塗佈液，緊 接著自上述照射部照射紫外線的控制部亦可。依據該控制 部’因塗佈於基板圖案上之塗佈液是於塗佈於基板之後， 緊接著照射紫外線而硬化，故可以抑制塗佈液之昇華。 若藉由本發明之另外觀點時，則提供一種基板處理系 統’具有在形成於基板之圖案上塗佈塗佈液之塗佈處理裝 置，和將基板搬入搬出至上述塗佈處理裝置之搬運裝置。 然後’上述搬運裝置具有支撐基板而予以搬運之搬運臂， -7- 200916200 和對以上述搬運臂所支撐之基板，將紫外線照射至該基板 之圖案上之塗佈液的照射部。 此時，以塗佈處理裝置在基板之圖案上塗佈塗佈液之 後，該基板藉由搬運臂被搬運至搬運裝置，因在該基板支 撐於搬運臂之狀態下，自搬運裝置之照射部對基板之圖案 上之塗佈液照射紫外線，故可以在線內於基板圖案上形成 塗佈膜，可以圓滑執行塗佈膜之形成。 並且，若藉由另外之觀點，本發明則提供一種塗佈處 理方法，在形成於基板之圖案上形成塗佈膜，形成上述塗 佈膜之塗佈液包含液體狀之塗佈膜形成成份和溶劑，上述 塗佈膜形成成份含有光聚合起始劑。然後，本發明之塗佈 處理方法具有在基板之圖案上塗佈上述塗佈液之塗佈工 程；和對塗佈於上述基板之圖案上之塗佈液照射紫外線， 使上述光聚合起始劑活性化而形成塗佈膜之照射工程。 在本發明之塗佈處理方法中，在基板之圖案上塗佈包 含液體狀之塗佈膜形成成分之塗佈液。如此一來，當在基 板之圖案上塗佈塗佈液時，因該塗佈液所含之液體狀之塗 佈膜形成成分之離動性佳，故塗佈液可以圓滑擴散基板之 圖案之凹凸上。因此，在形成於基板之圖案之塗佈膜產生 階差，可以使塗佈膜之表面平坦化。 再者，在此被塗佈於該基板之圖案上之塗佈液所含之 液體狀之塗佈膜形成成分爲低分子，因各個之分子無結 合，故具有容易昇華之性質。當加熱該塗佈膜形成成分 時，塗佈液更容易昇華。以往之塗佈膜因藉由加熱塗佈 -8- 200916200 液，使塗佈液硬化而形成’故於使用具有液體狀之塗佈形 成成分之塗佈液時’於使塗佈液硬化之時，塗佈液則昇 華。但是，若藉由本發明之塗佈處理方法，因對塗佈於基 板之圖案上之塗佈液照射紫外線，使塗佈液中之塗佈膜形 成成分所含之光聚合起始劑活性化而使塗佈液硬化’在基 板之圖案上形成塗佈膜’故不需要加熱塗佈液，或是不需 要加熱至所需以上’可以較以往抑制塗佈液之昇華。再 者，當對光聚合起始劑照射紫外線時’光聚合起始劑以短 時間活性化，可以以短時間執行塗佈液之硬化。該光聚合 起始劑之短時間內的活性化也有助於抑制塗佈液之昇華。 如此一來，因可以抑制塗佈液之昇華’故可以抑制所形成 之塗佈膜之膜厚之減少。 即使將從完成上述塗佈工程至開始上述照射工程爲止 之時間，控制成事先所預定之時間以內亦可。該時間於放 置塗佈有塗佈液之基板時’可以設定成該被塗佈之塗佈液 昇華之量成爲容許範圍內之時間。如此一來，藉由控制時 間，塗佈工程是從完成塗佈工程至開啓照射工程爲止’即 使塗佈液昇華，亦可以將所形成之塗佈膜之膜厚之減少抑 制在容許範圍內。 即使在基板面內之所有區域’控制成從在上述塗佈工 程中塗佈塗佈液至在上述照射工程中照射紫外線爲止之時 間成爲一定亦可。依此，因在塗佈有塗佈液之基板之面內 所有區域，可以使塗佈有塗佈液昇華之量成爲一定’故可 以使所形成之塗佈膜之膜厚均勻° -9- 200916200 即使對將塗佈液塗佈於基板之區域上之後的該區域上 之塗佈液，緊接著執行上述照射工程中之紫外線之照射亦 可。依此，被塗佈於基板之圖案上之塗佈液，於被塗佈於 基板之後’緊接著照射紫外線而硬化，故可以使從塗佈液 之塗佈至紫外線照射之時間成爲短時間，並可以抑制塗佈 液之昇華。 塗佈工程或是上述照射工程之雙方或任一方即使冷卻 基板周邊之環境而被執行亦可。依此，因塗佈於基板之圖 案上之塗佈液被冷卻，故可以更抑制塗佈液之昇華。 於上述塗佈工程之後，並且上述照射工程之前，即使 具有以特定時間加熱基板周邊之環境，使塗佈於上述基板 之圖案上之塗佈液昇華至成爲特定厚度爲止之加熱工程亦 可。 依此，於將塗佈液塗佈在基板之圖案上之後，所塗佈 之塗佈液之厚較度特定之厚度厚時，在特定時間加熱基板 周邊之環境，使基板之圖案之塗佈液昇華，依此可以使塗 佈液之厚度成爲特定厚度。其結果，可以形成特定膜厚之 塗佈膜。並目.，如此一來，塗佈膜之膜厚雖然可由加熱之 溫度和時間控制，但是大膜厚之變化即使以溫度控制，小 膜厚之變化以時間控制亦可。 如此一來，藉由以特定時間加熱基板周邊之環境，亦 可以使被塗佈於圖案之凹部份以外之圖案表面的塗佈液全 .部昇華。即是，使形成於圖案上之塗佈膜之膜厚成爲零’ 藉由僅在圖案之凹佈塡充塗佈液並予以硬化，則可以消除 -10- 200916200 圖案之凹凸，使圖案上面平坦化。自以往，於形成塗佈膜 之後，作爲不需要圖案上之塗佈膜之方法，有例如執行蝕 刻而除去該塗佈膜之所謂的回蝕工程之情形，但是若藉由 本發明則可以省略如此之回蝕工程，可以提升基板處理之 產出量。 於上述照射工程之後，即使具有以特定時間加熱基板 周邊之環境，使形成在上述基板之塗佈上之塗佈膜昇華之 加熱工程亦可。例如於形成在基板圖案上之塗佈膜上之光 阻膜之膜厚不均勻，或光阻膜之圖案非所欲者之時，剝離 該光阻膜和塗佈膜之後，於基板圖案上再形成塗佈膜和光 阻膜的所謂再製加工（rework )處理。該再製處理之時除 去光阻膜和塗佈膜，自以往是照射〇2電槳或N2/H2電槳 而執行。但是，如以往般，於執行〇2電漿時，基板之圖 案則有受到〇2電漿等而損傷之情形。因在如此之再製處 理時，因可以藉由加熱基板周邊之環境，使塗佈膜昇華而 剝離，故可以減輕對基板上之圖案所造成之損傷或消失。 再者，依此，可以改善再製時之良率下降。 若藉由本發明之另外觀點，則提供一種可讀取之電腦 記憶媒體，爲了藉由塗佈處理裝置或是基板處理系統實行 上述塗佈處理方法，儲存有控制該塗佈處理裝置或基板處 理系統之控制部之電腦上動作的程式。 若藉由本發明對於在形成於基板之特定圖案上形成塗 佈膜，可以使塗佈膜表面平坦化，可以抑制塗佈液之昇 華，抑制塗佈膜之膜厚之減少。 -11 - 200916200 【實施方式】 以下，針對本發明之最佳實施形態予以說明。第1圖 爲表示搭載本實施形態所涉及之塗佈處理裝置，當作基板 處理系統之塗佈顯像處理系統1之構成槪略的平面圖，第 2圖爲塗佈顯像處理系統1之正面圖，第3圖爲塗佈顯像 處理系統1之背面圖。 塗佈顯像處理系統1是如第1圖所示般，具有一體連 接在以匣盒單位將例如2 5片之晶圓W自外部搬入搬出至 塗佈顯像處理系統1，或經晶圓W搬入搬出至匣盒C之匣 盒台2’和以葉片式多階配置在光微影工程中施予特定處 理之多數各種處理裝置之處理台3，和與該處理台3鄰接 而設置之曝光裝置（無圖式）之間交接晶圓W之介面部4 的構成。 匣盒台2設置在匣盒載置台5，該匣盒載置台5是將 多數匣盒在X方向（圖中之上下方向）載置自如成一列。 在匣盒2設置有可在搬運路6朝向X方向移動之晶圓搬運 體7。晶圓搬運體7也在收容於匣盒C之晶圓W之晶圓配 列方向（Z方向：垂直方向）移動自如，可以對配列於X 方向之各匣盒C內之晶圓W，選擇性存取。 晶圓搬運體7可在圍繞Z軸之0方向旋轉，即使對屬 於後述之處理系統3側之第3處理裝置群G 3之溫度調節 裝置60’或用以執行晶圓W之交接之轉換裝置61亦可存 取。 -12- 200916200 與匣盒台2鄰接之處理台3具備有多數配置多數 裝置之例如5個處理裝置群G1〜G5。在處理台3之 向負方向（第1圖中之下方向）側，自匣盒台2側順 置有第1處理裝置群G1、第2處理裝置群G2。 於處理台3之X方向正方向（第1圖中之上方 側’自匣盒台2側順序配置有第3處理裝置群G3、 處理裝置群G4及第5處理裝置群G5。第3處理裝 G3和第4處理裝置群G4之間，設置有第1搬運 A1，在第1搬運裝置A1之內部，設置有支撐晶圓w 運之第1搬運臂10。 第1搬運臂1 0是選擇性存取於第1處理裝置群 第3處理裝置群G3及第4處理裝置群G4內之各處 置而搬運晶圓W。在第4處理裝置群G4和第5處理 群G5之間，設置有第2搬運裝置A2，在第2搬運 A2之內部’設置有支撐晶圓w而搬運之第2搬運臂 第2搬運臂η可以選擇性存取於第2處理裝置群G2 4處理裝置群G4及第5處理裝置群G5之各處理裝置 運晶圓W。 如第2圖所示般，在第1處理裝置群G1從下方 5段疊層將特定液體供給至晶圓w而執行處理之液體 裝置’例如對晶圓W塗佈光阻液之光阻塗佈裝置 2 1、22 ;形成防止曝光處理時之光之反射的反射防止 底部塗佈裝置23 ;在晶圓W之圖案P上形成塗佈膜 本發明所涉及之塗佈處理裝置24。在第2處理裝置荐 處理 X方 序配 向） 第4 置群 裝置 而搬 G1 ' 理裝 裝置 裝置 11° 、第 而搬 依序 處理 20、 膜之 R之 i G2 -13- 200916200 由下方依序5段疊層例如顯像液供給至晶圓w而予以 像處理之顯像處理裝置30〜34。再者，於第1處理裝置 G1及第2處理裝置群G2之最下段，各設置有用以將各 處理液供給至各處理裝置群G 1、G 2內之液處理裝置之 學室40、41。 例如，第3圖所示般，在第3處理裝置群G 3，由 方依序9段疊層溫度調節裝置60、轉換裝置61、在精 高之溫度管理下調節晶圓W之溫度的高精度溫度調節 置62〜64及以高溫處理晶圓w之高溫度熱處理裝置65 68 ° 在第4處理裝置群G4中，例如加熱處理高精度溫 調節裝置7 0、光阻塗佈處理後之晶圓w的預烘烤裝置 〜74及加熱處理顯像處理後之晶圓w之後烘烤裝置75 79 ° 在第5處理裝置群G5中，由下方依序10段疊層熱 理晶圓W之多數熱處理裝置，例如高精度溫度調節裝 80〜83、事後曝光烘烤裝置84〜89。 如第1圖所示般’在第1搬運裝置A1之X方向正 向側，配置有多數處理裝置，例如第3圖所示般，由下 4段重疊用以將晶圓w疏水化處理之附著裝置90、9 1 加熱晶圓W之加熱裝置92、93。如第1圖所示般，在 2搬運裝置A2之X方向正方向側，配置有選擇性僅使 如晶圓W之邊緣部曝光之周邊曝光裝置94。Improvement "Electrical 丨1 995). The coating liquid is applied in a solid state, and the diffusion-diffused wafer is patterned to form a coating film R. Therefore, conventionally, the coating film R is flattened on the surface formed on the substrate: the processing container, the substrate, and the coating, and the coating portion is applied to the coating portion. The coating is applied to the liquid containing the liquid containing the liquid. -5- 200916200 The film forming component has good detachment property, so that the coating liquid can be smoothly spread on the unevenness of the pattern of the substrate. Therefore, the coating film formed on the pattern of the substrate does not cause a step, and the surface of the coating film can be flattened. Further, the liquid coating film forming component contained in the coating liquid applied to the pattern of the substrate is low in molecular weight, and since each molecule is bonded, it has a property of being easily sublimated. When the coating film forming component is heated, the coating liquid is more easily sublimated. Since the coating film of the prior art is formed by curing the coating liquid by heating the coating liquid, when a coating liquid having a liquid coating forming component is used, when the coating liquid is cured, the coating liquid is sublimation. However, in the case of the irradiation unit of the present invention, the coating liquid applied to the pattern of the substrate is irradiated with ultraviolet rays to cure the coating liquid, and a coating film is formed on the pattern of the substrate, so that heating coating is not required. The liquid can suppress the sublimation of the coating liquid more than before. Therefore, the reduction in the film thickness of the formed coating film can be suppressed. The irradiation unit may be provided on the upper portion of the processing container. By the irradiation unit, since the ultraviolet ray can be irradiated to the substrate housed in the processing container, the application of the coating liquid and the irradiation of the ultraviolet ray can be performed on the substrate while the substrate is housed in the processing container. Therefore, the treatment from the application of the coating liquid to the irradiation of the ultraviolet ray can be continuously performed, and the portion can shorten the processing time. The irradiation unit may be provided at the upper portion of the loading/outlet. By applying the coating liquid to the pattern of the substrate by the irradiation unit, when the substrate is transported to the outside from the loading port of the processing container, the coating liquid on the pattern of the substrate can be irradiated with ultraviolet rays. In the processing container, there is a rotating clamp -6 - 200916200 for holding the substrate, and the coating liquid on the pattern of the substrate is irradiated with ultraviolet rays by the irradiation portion, even from the center of the substrate to the end of the substrate. It is also possible to go beyond the area. As a result, when the ultraviolet ray is irradiated to the substrate rotated by the rotating jig, the coating film can be formed over the entire substrate only by irradiating the ultraviolet ray at least to the center of the substrate to the end portion of the substrate. Further, in this case, the irradiation unit may be attached to the application nozzle. The coating nozzle is a nozzle having a slit-shaped discharge port extending in a width direction of the substrate, and the irradiation portion may have a shape extending in parallel with the coating nozzle in a width direction of the substrate, and may be moved in synchronization with the coating nozzle. . As a result, the coating nozzle moves in synchronization with the irradiation unit, and the time from the application of the coating liquid to the irradiation of the ultraviolet ray can be controlled to be constant over the entire area of the substrate surface. Further, in this case, the irradiation unit may be attached to the coating nozzle. Further, the coating nozzle and the irradiation unit may have an independent moving mechanism, and the irradiation unit may be provided in a large number. The coating treatment apparatus may have a coating liquid that is controlled to apply the coating liquid on the region after the coating liquid is applied to the substrate region from the coating nozzle, and may be followed by a control unit that irradiates ultraviolet rays from the irradiation portion. According to the control unit, since the coating liquid applied to the substrate pattern is applied to the substrate and then cured by irradiation with ultraviolet rays, sublimation of the coating liquid can be suppressed. According to another aspect of the present invention, a substrate processing system is provided which has a coating processing apparatus that applies a coating liquid on a pattern formed on a substrate, and a conveying apparatus that carries the substrate into and out of the coating processing apparatus. Then, the transfer device has a transfer arm that supports the substrate and is transported, and -7-200916200 and an irradiation portion that applies ultraviolet ray to the coating liquid on the pattern of the substrate on the substrate supported by the transfer arm. At this time, after the coating liquid is applied to the pattern of the substrate by the coating processing apparatus, the substrate is transported to the transport device by the transport arm, and the irradiation portion of the transport device is carried out while the substrate is supported by the transport arm. Since the coating liquid on the pattern of the substrate is irradiated with ultraviolet rays, the coating film can be formed on the substrate pattern in-line, and the formation of the coating film can be smoothly performed. Further, according to another aspect, the present invention provides a coating treatment method for forming a coating film on a pattern formed on a substrate, and the coating liquid for forming the coating film contains a liquid coating film forming component and The solvent, the coating film forming component contains a photopolymerization initiator. Then, the coating treatment method of the present invention has a coating process of applying the coating liquid onto a pattern of a substrate; and irradiating the coating liquid applied to the pattern of the substrate with ultraviolet rays to cause the photopolymerization initiator The irradiation process of forming a coating film by activation. In the coating treatment method of the present invention, a coating liquid containing a liquid coating film forming component is applied onto a pattern of a substrate. In this manner, when the coating liquid is applied onto the pattern of the substrate, since the liquid-like coating film forming component contained in the coating liquid has good detachability, the coating liquid can smoothly diffuse the pattern of the substrate. On the bump. Therefore, a step is formed in the coating film formed on the pattern of the substrate, and the surface of the coating film can be flattened. Further, the liquid coating film forming component contained in the coating liquid applied to the pattern of the substrate is low in molecular weight, and since each molecule has no binding, it has a property of being easily sublimated. When the coating film forming component is heated, the coating liquid is more easily sublimated. In the conventional coating film, the coating liquid is hardened by heating to apply the liquid -8-200916200, and the coating liquid is formed when the coating liquid is hardened. The coating liquid is sublimated. However, according to the coating treatment method of the present invention, the coating liquid applied to the pattern of the substrate is irradiated with ultraviolet rays to activate the photopolymerization initiator contained in the coating film forming component in the coating liquid. The coating liquid is hardened to form a coating film on the pattern of the substrate, so that it is not necessary to heat the coating liquid, or it is not necessary to heat it to a desired level, and the sublimation of the coating liquid can be suppressed as compared with the prior art. Further, when the photopolymerization initiator is irradiated with ultraviolet rays, the photopolymerization initiator is activated in a short time, and the hardening of the coating liquid can be performed in a short time. The activation of the photopolymerization initiator in a short period of time also contributes to suppression of sublimation of the coating liquid. As a result, since the sublimation of the coating liquid can be suppressed, the decrease in the film thickness of the formed coating film can be suppressed. The time from the completion of the above coating process to the start of the above-described irradiation process can be controlled to be within a predetermined time. When the substrate coated with the coating liquid is placed at this time, the amount of sublimation of the applied coating liquid can be set to be within the allowable range. In this way, by controlling the time, the coating process is performed from completion of the coating process to the start of the irradiation process, and even if the coating liquid is sublimated, the film thickness of the formed coating film can be reduced within an allowable range. Even if all the regions in the surface of the substrate are controlled to be constant from the time when the coating liquid is applied in the above coating process until the ultraviolet rays are irradiated in the above-mentioned irradiation process. According to this, since the amount of sublimation applied to the coating liquid can be made constant in all the regions in the surface of the substrate coated with the coating liquid, the film thickness of the formed coating film can be made uniform. 200916200 Even if the coating liquid on the region after the coating liquid is applied to the region of the substrate, the irradiation of the ultraviolet rays in the above irradiation process may be performed. According to this, the coating liquid applied to the pattern of the substrate is hardened by irradiation with ultraviolet rays after being applied to the substrate, so that the time from application of the coating liquid to ultraviolet irradiation can be made short. And can suppress the sublimation of the coating liquid. Both the coating process or the above-described irradiation process may be performed even if the environment around the substrate is cooled. According to this, since the coating liquid applied to the pattern on the substrate is cooled, sublimation of the coating liquid can be further suppressed. After the above coating process, and before the above-described irradiation process, even if the environment surrounding the substrate is heated for a specific period of time, the coating liquid applied to the pattern of the substrate may be sublimated to a specific thickness. According to this, after the coating liquid is applied onto the pattern of the substrate, and the thickness of the coating liquid to be applied is thicker than the specific thickness, the environment around the substrate is heated at a specific time to coat the pattern of the substrate. The liquid is sublimated, whereby the thickness of the coating liquid can be made to a specific thickness. As a result, a coating film having a specific film thickness can be formed. Further, in this case, although the film thickness of the coating film can be controlled by the temperature and time of heating, the change in the large film thickness can be controlled by time even if the temperature is controlled by the temperature. In this way, by heating the environment around the substrate at a specific time, the coating liquid applied to the surface of the pattern other than the concave portion of the pattern can be sublimated. That is, the film thickness of the coating film formed on the pattern is made zero. By merely coating the coating liquid and hardening the coating liquid, the unevenness of the pattern of -10-200916200 can be eliminated, and the pattern is flattened. Chemical. Conventionally, after forming a coating film, as a method of not requiring a coating film on a pattern, there is a case where a so-called etch back process of removing the coating film is performed by etching, for example, but the present invention can be omitted. The etch back project can increase the throughput of substrate processing. After the above irradiation process, even if the environment around the substrate is heated for a specific period of time, the heating process for sublimating the coating film formed on the coating of the substrate may be performed. For example, when the film thickness of the photoresist film formed on the coating film on the substrate pattern is not uniform, or the pattern of the photoresist film is undesired, after the photoresist film and the coating film are peeled off, on the substrate pattern A so-called rework process of forming a coating film and a photoresist film is further performed. The removal of the photoresist film and the coating film at the time of the rework treatment was performed by irradiating the 〇2 electric paddle or the N2/H2 electric paddle. However, as in the past, when the 〇2 plasma is executed, the pattern of the substrate is damaged by the 电2 plasma or the like. In the case of such a reprocessing, since the coating film can be sublimated and peeled off by heating the environment around the substrate, damage or disappearance of the pattern on the substrate can be reduced. Furthermore, according to this, the yield reduction at the time of reproduction can be improved. According to another aspect of the present invention, a readable computer memory medium is provided, and the coating processing apparatus or the substrate processing system is stored for storing the coating processing method by a coating processing apparatus or a substrate processing system. The program that operates on the computer of the control unit. According to the present invention, by forming a coating film on a specific pattern formed on a substrate, the surface of the coating film can be flattened, and the sublimation of the coating liquid can be suppressed, and the film thickness of the coating film can be suppressed from being reduced. -11 - 200916200 [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described. 1 is a plan view showing a configuration of a coating development processing system 1 as a substrate processing system in which a coating processing apparatus according to the present embodiment is mounted, and FIG. 2 is a front view of the coating development processing system 1. Fig. 3 is a rear view of the coating development processing system 1. As shown in FIG. 1, the coating development processing system 1 is integrally connected to carry out, for example, 25 wafers W from the outside into the coating development processing system 1 in a cassette unit, or via a wafer. W is loaded into the cassette table 2' of the cassette C and the processing table 3 of a plurality of various processing apparatuses that are subjected to specific processing in the photolithography project in a blade type multi-step arrangement, and is disposed adjacent to the processing table 3 The configuration of the interface 4 of the wafer W is transferred between the exposure devices (not shown). The cassette table 2 is placed on a cassette mounting table 5 which mounts a plurality of cassettes in a row in the X direction (upper and lower directions in the drawing). The cassette 2 is provided with a wafer carrier 7 that is movable in the X direction in the conveyance path 6. The wafer carrier 7 is also movable in the wafer arrangement direction (Z direction: vertical direction) of the wafer W accommodated in the cassette C, and can selectively select the wafer W in each of the cassettes C arranged in the X direction. access. The wafer carrier 7 can be rotated in the 0 direction around the Z axis, even for the temperature adjusting device 60' of the third processing device group G3 belonging to the processing system 3 side to be described later or the switching device for performing the transfer of the wafer W. 61 can also be accessed. -12- 200916200 The processing station 3 adjacent to the cassette table 2 is provided with, for example, five processing device groups G1 to G5 in which a large number of devices are arranged. On the side of the processing table 3 in the negative direction (the lower direction in the first drawing), the first processing device group G1 and the second processing device group G2 are arranged from the cassette table 2 side. The third processing device group G3, the processing device group G4, and the fifth processing device group G5 are arranged in the positive direction of the X direction of the processing table 3 (the upper side in the first drawing) from the cassette side 2 side. The third processing device The first conveyance arm A1 is provided between G3 and the fourth processing apparatus group G4, and the first conveyance arm 10 that supports the wafer w is provided inside the first conveyance device A1. The first conveyance arm 10 is selective. The wafer W is transported by the respective processes in the third processing device group G3 and the fourth processing device group G4 of the first processing device group, and the fourth processing device group G4 and the fifth processing group G5 are provided between the fourth processing device group G4 and the fifth processing group G5. 2, the transport device A2, the second transport arm η that is provided with the support wafer w and is transported inside the second transport A2, can selectively access the second processing device group G2, the processing device group G4, and the second (5) Each processing device of the processing device group G5 transports the wafer W. As shown in Fig. 2, the liquid processing device that performs the processing by supplying the specific liquid to the wafer w from the lower five stages in the first processing device group G1 For example, the photoresist coating device 2 1 and 22 which apply the photoresist to the wafer W; and prevent reflection of light from being prevented from being reflected during the exposure process Part coating device 23; forming a coating film on the pattern P of the wafer W. The coating processing device 24 according to the present invention. The second processing device is recommended to process the X-sequence alignment) and the fourth group device is moved to move G1' The gantry device is 11°, the second processing is performed 20, and the film R is i G2 -13- 200916200. The image processing is performed by laminating, for example, a developing liquid to the wafer w in the following five stages. Devices 30 to 34. Further, in the lowermost stage of the first processing apparatus G1 and the second processing apparatus group G2, the classrooms 40 and 41 for supplying the respective processing liquids to the liquid processing apparatuses in the respective processing apparatus groups G1 and G2 are provided. . For example, as shown in Fig. 3, in the third processing apparatus group G3, the temperature adjustment device 60 and the conversion device 61 are stacked in a stepwise manner, and the temperature of the wafer W is adjusted under the temperature control of the high temperature. High-temperature heat treatment device 65 to 64 and high-temperature processing of wafer w at high temperature 65 68 ° In the fourth processing device group G4, for example, heat treatment high-precision temperature adjustment device 70, crystal after photoresist coating treatment The pre-baking device w74 of the circle w and the wafer w after the heat treatment process is post-baking device 75 79 ° In the fifth processing device group G5, the thermal processing wafer W is laminated in 10 steps from the bottom. Most of the heat treatment devices, such as high-precision temperature adjustment devices 80 to 83, and after-exposure baking devices 84 to 89. As shown in Fig. 1, a plurality of processing devices are disposed on the positive side of the X direction of the first transport device A1. For example, as shown in Fig. 3, the wafers w are hydrophobized by the next four stages. The attachment means 90, 91 heat the heating means 92, 93 of the wafer W. As shown in Fig. 1, a peripheral exposure device 94 that selectively exposes only the edge portion of the wafer W is disposed on the positive side of the X direction of the transport device A2.

在介面部4上，設置有例如第1圖所示般在朝向X 顯 群 種 化 下 度 裝 度 71 處 置 方 方 第 例 方 -14 - 200916200 向延伸之搬運路1 〇 〇上移動之晶圓搬運體1 01 ’和緩衝匣 盒102。晶圓搬運體101可在ζ方向移動，並且也可在0 旋轉，可以對與介面部4鄰接之曝光裝置（無圖式）和緩 衝匣盒102及第5處理裝置群G5存取而搬運晶圓W。 接著，針對塗佈處理裝置24之構成’根據第4圖予 以說明。塗佈處理裝置24具有處理容器150。處理容器 150之一側面是面對晶圓W之搬運手段之第1搬運臂10 之搬入區域之面，形成晶圓W之搬入出口 151，在搬入出 口 151設置有開關快門152。 在處理容器150之內部設置有將W水平真空吸附保 持於於其上面而作爲基板保持機構之旋轉夾具120。該旋 轉夾具1 20可以藉由包含馬達等之旋轉驅動部1 2 1繞著垂 直軸旋轉，並且升降。 在旋轉夾具120之周圍設置有杯罩體122。杯罩體 1 22是以旋轉夾具1 20可以升降之方式，形成比晶圓w大 之開口部。在杯罩體122底部，形成有用以自晶圓W上 排出零落之塗佈液之排液口 1 2 3，該排液口 1 2 3連接有排 液管124 。 在旋轉夾具1 2 0之上方，配置有用以將塗佈液塗佈於 晶圓W表面之中心部的塗佈噴嘴1 3 0。塗佈噴嘴1 3 0。塗 佈噴嘴1 3 0經塗佈液供給管1 3 i而連接於供給塗佈液之塗 佈液供給源1 3 2。在塗佈液供給管丨3 1設置有具有閥或流 量調整佈等之供給控制裝置〗3 3。自塗佈液供給源丨3 2所 供給之塗佈液使用例如XUV (日產化學工業株式會社製 -15- 200916200 品）.，於塗佈液含有液體狀之塗佈膜形成成分和溶劑。塗 佈膜形成成分包含碘鎗鹽等之光聚合起始劑、環氧樹脂、 丙二醇單甲醚、丙二醇單甲醚醋酸鹽等。使用例如稀釋劑 作爲溶劑。 在處理容器150之上方設置有對旋轉夾具120上之晶 圓W照射紫外線之照射部1 1 0。照射部1 1 0可以對晶圓W 之全面照射紫外線。 塗佈噴嘴130是如第5圖所示般，經機械臂134而連 接於移動機構135。機械臂134是可以藉由移動機構 1 3 5，沿著順著處理容器1 5 0之長度方向（Y方向）而設 置之導軌1 3 6，自設置在杯罩體122之一端側（在第5圖 中爲左側）之外側之待機區域1 3 7朝向另一端側移動，並 且’可以在上下方向移動。待機區域1 3 7構成可以收納塗 佈噴嘴1 3 0，並且具有可以洗淨塗佈噴嘴1 3 〇之前端部之 洗淨部137a。 搭載本實施形態所涉及之塗佈處理裝置2 4之塗佈顯 像處理系統1構成以上般’接著針對在該塗佈顯像處理系 統1所執行之晶圓處理予以說明。 首先’藉由晶圓搬運體7，自匣盒載置台5上之厘盒 C取出一片在表面形成特定圖案之晶圓w，搬運至第3處 理裝置群G3之溫度調節裝置60。被搬運至溫度調節裝置 60之晶圓W被溫度調節至特定溫度，之後，被搬運至本 發明所涉及之塗佈處理裝置24。 晶圓W藉由第1搬運臂10自搬入出口 15〗被搬運至 -16- 200916200 處理容器150內，移動至旋轉夾具120之上方。在此，使 旋轉夾具120上昇，自第1搬運機械臂1〇轉交晶圓至旋 轉夾具120。然後，旋轉夾具1 20吸附晶圓W而水平保 持，將晶圓W下降至特定位置。 接著，藉由旋轉驅動部I 2 1以例如旋轉數5 00 rpm使 晶圓W旋轉，並且使塗佈噴嘴1 3 0移動至晶圓W之中心 部上方。然後，如第6圖（a)所示般，自塗佈噴嘴130 例如2秒吐出塗佈液Q至晶圓W之中心部，以旋轉數 1 5 0 0 rpm使晶圓W加速而使旋轉1 5秒，藉由該晶圓W之 旋轉所產生之離心力，使塗佈液Q擴散至晶圓W之圖案P 上。之後’使塗佈噴嘴13 0自晶圓W之中心部上方移動 至待機區域1 3 7。 當塗佈液Q擴散至晶圓W之塗佈P上之全面時，藉 由旋轉夾具1 2 〇使晶圓W上昇至特定位置。然後，自照 射部1 1 〇對被塗佈於晶圓W之圖案P上之塗佈液Q，以例 如2秒間/cm2照射例如波長222 nm、能量7 mW/cm2之紫 外線。藉由該照射之紫外線，塗佈液Q內所含之光聚合起 始劑活性化，塗佈液Q硬化。然後，如第6圖（b )所示 般，在晶圓W之圖案P上形成塗佈液硬化之塗佈膜R。塗 佈膜R例如以nm〜3 00 nm之膜厚形成。 當在晶圓w之圖案p上形成塗佈膜R時，晶圓W藉 由第1搬運臂1 〇搬運至底部塗佈裝置23，形成反射防止 膜。形成有反射防止膜之晶圓W，藉由第1搬運臂1 〇依 序被搬運至加熱裝置2、高溫度熱處理裝置65、高精度溫 -17- 200916200 度調節裝置70 ’在各裝置施予特定處理，之後，晶圓W 被搬運至光阻塗佈裝置20。 在光阻塗佈裝置20中’當在晶圓W上形成光阻膜 時’晶圓W藉由第1搬運臂被搬運至預烘烤裝置71， 施予加熱處理之後，接著，藉由第2搬運臂11依序搬運 至周邊曝光裝置94、高精度溫度調節裝置83，在各裝置 中施予特定處理。之後，藉由介面部4之晶圓搬運體1〇1 搬運至曝光裝置（無圖式），在晶圓W上之光阻膜曝光 特定圖案。完成曝光處理之晶圓W是藉由晶圓搬運體ιοί 而搬運至事後曝光烘烤裝置84，施予特定處理。 當完成事後曝光烘烤裝置84中之熱處理時，晶圓W 藉由第2搬運臂11被搬運至高精度溫度調節裝置81而溫 度調節，之後被搬運至顯像處理裝置30，對晶圓W上施 予顯像處理，在光阻膜形成圖案。之後，晶圓W藉由第2 搬運臂1 1被搬運至事後曝光烘烤裝置75，於施予加熱處 理之後，被搬運至高精度溫度調節裝置63而調節溫度。 然後，晶圓W藉由第1搬運臂被搬運至轉換裝置61， 藉由晶圓搬運體7返回至匣盒C ’完成一連串之光微影工 程。 若藉由以上之實施形態，當塗佈液Q被塗佈至晶圓W 之圖案P上時，因該塗佈液Q所含之液體狀之塗佈膜形成 成分之流動性佳，故塗佈液Q可以圓滑擴散晶圓w之圖 案P之凹凸上。因此，如第6圖（b)所示般，可以使形 成在晶圓W之圖案p上之塗佈膜Ri表面平坦化。 -18- 200916200 因自照射部1 1 〇對塗佈於晶圓W之圖案P上之塗佈 液Q照射紫外線，依此使塗佈液Q硬化，可以在晶圓w 之圖案P上形成塗佈膜R，故不需要如以往般於形成塗佈 膜R之時’加熱塗佈液，可以較以往抑制由於加熱容易昇 華之塗佈液Q之昇華。因此，可以抑制所形成之塗佈膜R 之膜厚之減少。 並且’照射部110因設置在處理容器150內之上部， 對旋轉夾具1 20上之晶圓W照射紫外線，故可以在晶圓 W收容在處理容器丨5 〇內之狀態下，對晶圓w執行塗佈 液Q之塗佈和紫外線之照射。因此，可以連續執行自塗佈 液Q之塗佈至紫外線照射爲止之處理，其部份可以縮短處 理時間。 以上之實施形態所記載之照射部1 1 0雖然設置在處理 容器1 5 0內之上部，但是照射部1 1 1是如第7圖所示般， 即使設置在處理容器1 5 0上面1 5 0 a之外側亦可。照射部 1 1 1設置在可以對旋轉夾具1 20上之晶圓W照射紫外線之 方向，在上面1 5 0 a使用使紫外線透過之例如無色透明之 玻璃板。此時，自照射部1 1 1所照射之紫外線通過上面 1 5 0 a，照射至晶圓W之圖案P上之塗佈液Q，可以形成塗 佈膜R。再者，因即使塗佈液Q飛散至例如處理容器1 5 0 內，照射部也不會污染，故可以使照射部U 1之維修之頻 率減少。 以上之實施形態中所記載之照射部11 0、Π1雖然設 置在旋轉夾具1 2〇之上方，但是照射部1 60如第8圖所示 -19- 200916200 般，即使設置在搬入出口 1 5 1之上部亦可。此時，自塗佈 噴嘴1 3 0將塗佈液Q塗佈在晶圓w之圖案P上之後，藉 由第1搬運臂10將晶圓W從處理容器丨50之搬入出口 1 5 1搬運至外部之時’則可以藉由照射部丨6〇對晶圓w之 圖案P上之塗佈液Q照射紫外線。因此，可以在處理容器 1 50內對晶圓W連續執行塗佈液Q之塗佈和紫外線之照 射’可以縮短從塗佈液Q之塗佈至紫外線照射爲止之時 間。 以上之實施形態所記載之照射部1 1 〇、1 1 1、i 60雖然 設置在旋轉夾具120上方，或是搬入出口 151之上部，但 是照射部1 7 0是如第9圖所示般，即使附設於塗佈噴嘴 130亦可。照射部170如第10圖所示般，藉由塗佈噴嘴 1 3 0之一的側面1 3 0 a和照射部1 7 0之一的側面1 7 0 a連 接，附設於塗佈噴嘴1 3 0。此時，藉由調整照射部丨7 〇之 上下方向之位置，或是晶圓W之上下方向之位置，如第9 圖所示般，對從晶圓W之中心至晶圓W之端部之範圍 Η，晶圓W之圖案P上之塗佈液Q照射紫外線。 在塗佈處理裝置2 4即使設置有控制來自照射部1 7 0 之紫外線之照射，或是藉由供給控制裝置1 3 3之塗佈液 1 3 3之塗佈液q之塗佈等的控制部3 4 0亦可。該控制部 3 4 0是控制成自塗佈噴嘴1 3 0在晶圓W之區域上塗佈塗佈 液之後，緊接著對該區域上之塗佈液Q，自照射部1 70照 射紫外線。 此時，因自照射部1 7 〇 W藉由旋轉夾具1 2 0所旋轉之 -20- 200916200 晶圚W照射紫外線，故僅以至少對範圍Η照射紫外線， 硬化晶圓W全面之塗佈液Q，可以形成塗佈膜R。 再者，藉由控制部340之控制，塗佈在晶圓W之圖 案Ρ上之塗佈液Q因對晶圓W被塗佈之後緊接著照射紫 外線而硬化，故可以抑制塗佈液Q之昇華。 即使取代以上實施形態所記載之塗佈噴嘴1 3 0，如第 Π圖所示般，使用具有延伸於X方向之縫隙狀之吐出口 140a之塗佈噴嘴140亦可。塗佈噴嘴Μ0是如第12圖及 第13圖所示般，例如形成較晶圚W之X方向之寬度長。 塗佈噴嘴140沿著導軌136，可以自設置在杯罩122之一 端側（在第1 3圖中爲左側）之外側之待機區域1 4 1朝向 另一端側移動。待機區域1 4 1構成可以收納塗佈噴嘴 1 4〇。並且，照射部即使使用上照射部1 1 〇、1 1 1、1 60中 之任一者亦可。即使如此之時，自塗佈噴嘴1 40將塗佈液 Q塗佈在晶圓 W之圖案P上之後，藉由照射部11〇、 111、160中之任一者，將紫外線照射至晶圓W之圖案P 上之塗佈液Q，可以形成塗佈膜R。 於使用以上之實施形態中所記載之塗佈噴嘴1 40之 時，照射部190如第14圖所示般，即使與塗佈噴嘴140 平行延伸於晶圓W之寬方向，附設於塗佈噴嘴140亦 可。照射部190是如第15圖所示般，連接塗佈噴嘴140 之一的側面1 4 0 a和照射部1 9 0之一的側面1 9 0 a連接’附 設於塗佈噴嘴1 4 0。 再者，其塗佈處理裝置24即使設置有控制來自照射 -21 - 200916200 部1 90之紫外線照射，或是藉由供給控制裝置i43塗佈塗 佈液Q等之控制部200亦可。該控制部200是控制成對自 塗佈噴嘴1 4 1 〇經塗佈液Q塗佈在晶圓W之區域上之後， 緊接著對該區域上之塗佈液Q，自照射部1 9 0照射紫外 線。 此時，藉由控制部2 0 0之控制，被塗佈在晶圓w之 圖案P上之塗佈液Q，因對晶圓W塗佈之後，緊接著照射 紫外線而硬化，故可以抑制塗佈液Q之昇華。再者，因塗 佈噴嘴1 4 0和照射部1 9 0同步移動，故可以控制成在晶圓 W之面內之全區域，從塗佈塗佈液Q至照射紫外線爲止之 時間成爲一定，可以使形成在晶圓W之圖案P上之塗佈 膜R之膜厚成爲一定。 以上之實施形態中，照射部1 9 0雖然附設於塗佈噴嘴 1 40，但是照射部2 1 0，是如第1 6圖所示般，即使與塗佈 噴嘴1 40獨立設置亦可。照射部2 1具有是與塗佈噴嘴1 40 之機械臂134和移動機構135獨立之機械臂211和移動機 構2 1 2。照射部2 1 0藉由移動機構2 1 2，可以沿著導軌 136，從設置在杯罩體122之一端側（在第16圖中爲右 側）之外側的待機區域2 1 3朝向另一端側移動，並且可以 在上下方向移動。 待機區域2 1 3是構成可以收納照射部2 1 0。此時，照 射部210因與塗佈噴嘴140獨立移動，故藉由調整塗佈噴 嘴1 40和照射部2 1 0之移動速度，可以控制成在晶圓w 之面內之全區域，從塗佈塗佈液Q至照射紫外線爲止之時 -22- 200916200 間成爲一定。並且，該些照射部210、機械臂211及 機構2 1 2即使如第1 7圖所示般多數設置亦可。藉由 設置照射部2 1 〇，可以更縮短對塗佈液Q照射紫外線 間。 並且’以上之塗佈處理裝置24雖然設置在塗佈 處理系統1之內部，但是塗佈處理裝置24獨立設置 佈顯像處理系統1之外部亦可。 在以上之實施形態中，照射部1 1 〇、1 1 1、1 60、1 2 1 0雖然設置在塗佈處理裝置2 4，但是照射部2 3 0是 18圖所示般，即使設置在第1之搬運裝置A1亦可。 搬運裝置A1具有框體220，在框體220之塗佈處理 24側之一側面形成有晶圓W之搬入出口 22 1。在框體 內之第1處理單元群G1及第2處理單元群G2側’如 圖所示般，於垂直方向設置有桿柱1 3、1 3，於桿柱] 一方內藏有使第1搬運機械臂10升降之升降機構（ 式）。桿柱13、13之間，如第1 8圖所示般，設置支 1 2，支撐部1 2之兩端部連接有桿柱1 3、1 3。在支撐; 上設置旋轉軸〗2a，旋轉軸12a支撐有第1搬運臂1〇 者，在支撐部12內藏有用以使傳動軸11旋轉’並且 至水平方向之馬達（無圖式），第1搬運臂10旋 如，並且即使在水平方向也移動自如。並且’在框體 內之上方，設置有對支撐於第1搬運臂10之晶® w 紫外線之照射部23 0。The intermediate surface 4 is provided with a wafer that is moved toward the extended transport path 1 在 in the X-display group, as shown in FIG. The carrier 1 01 'and the buffer cassette 102. The wafer carrier 101 can be moved in the x direction and can also be rotated at 0. The exposure device (not shown) adjacent to the mesa portion 4 and the buffer cassette 102 and the fifth processing device group G5 can be accessed to carry the crystal. Round W. Next, the configuration of the coating processing apparatus 24 will be described based on Fig. 4 . The coating treatment device 24 has a processing container 150. One side of the processing container 150 is a surface facing the loading area of the first transfer arm 10 facing the transport means of the wafer W, and a loading and unloading port 151 of the wafer W is formed, and a switch shutter 152 is provided at the loading/unloading port 151. Inside the processing container 150, a rotating jig 120 for holding the W horizontal vacuum suction thereon as a substrate holding mechanism is provided. The rotary jig 1 20 is rotatable about a vertical axis by a rotary drive unit 1 2 1 including a motor or the like, and is raised and lowered. A cup cover 122 is provided around the rotating jig 120. The cup cover 1 22 is formed so that the rotating jig 1 20 can be raised and lowered to form an opening larger than the wafer w. At the bottom of the cup cover 122, a liquid discharge port 1 2 3 for discharging the coating liquid from the wafer W is formed, and the liquid discharge port 124 is connected to the liquid discharge port 124. Above the rotating jig 1 120, a coating nozzle 1300 for applying a coating liquid to the center of the surface of the wafer W is disposed. The nozzle 1 3 0 is coated. The coating nozzle 130 is connected to the coating liquid supply source 133 for supplying the coating liquid via the coating liquid supply pipe 1 3 i. A supply control device 133 3 having a valve or a flow rate adjusting cloth or the like is provided in the coating liquid supply pipe 丨 31. The coating liquid supplied from the coating liquid supply source 丨3 2 is, for example, XUV (manufactured by Nissan Chemical Industries, Ltd., -15 to 200916200), and contains a liquid coating film forming component and a solvent in the coating liquid. The coating film forming component contains a photopolymerization initiator such as an iodine salt, an epoxy resin, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate or the like. For example, a diluent is used as a solvent. Above the processing container 150, an irradiation portion 1 110 that irradiates the crystal grains W on the rotating jig 120 with ultraviolet rays is provided. The irradiation unit 110 can irradiate the entire surface of the wafer W with ultraviolet rays. The coating nozzle 130 is connected to the moving mechanism 135 via the robot arm 134 as shown in Fig. 5 . The robot arm 134 is provided on the one end side of the cup cover 122 by the moving mechanism 135 along the longitudinal direction (Y direction) of the processing container 150 (in the first The standby area 1 3 7 on the outer side of the left side in the figure is moved toward the other end side, and 'can move in the up and down direction. The standby area 137 constitutes a washing nozzle 137a capable of accommodating the coating nozzle 130 and having the end portion before the coating nozzle 13 3 can be washed. The coating image processing system 1 equipped with the coating processing apparatus 24 according to the present embodiment is configured as described above. Next, the wafer processing executed by the coating development processing system 1 will be described. First, by the wafer carrier 7, a wafer w having a specific pattern on the surface is taken out from the cassette C on the cassette mounting table 5, and transported to the temperature adjusting device 60 of the third processing unit group G3. The wafer W transported to the temperature adjusting device 60 is temperature-adjusted to a specific temperature, and then transported to the coating processing apparatus 24 according to the present invention. The wafer W is transported to the inside of the processing container 150 by the first transfer arm 10 from the loading/unloading port 15 and moved to the upper side of the rotating jig 120. Here, the rotary jig 120 is raised, and the wafer is transferred from the first transfer robot 1 to the rotary jig 120. Then, the rotating jig 1 20 adsorbs the wafer W and horizontally holds it, and lowers the wafer W to a specific position. Next, the wafer W is rotated by, for example, a rotation number of 500 rpm by the rotation driving portion I 2 1 , and the coating nozzle 130 is moved above the center portion of the wafer W. Then, as shown in Fig. 6(a), the coating nozzle 130 ejects the coating liquid Q to the center portion of the wafer W for 2 seconds, for example, and accelerates the wafer W by rotating at a number of 1,500 rpm. At 15 seconds, the coating liquid Q is diffused onto the pattern P of the wafer W by the centrifugal force generated by the rotation of the wafer W. Thereafter, the coating nozzle 130 is moved from the upper portion of the wafer W to the standby region 137. When the coating liquid Q is spread over the entire surface of the coating P of the wafer W, the wafer W is raised to a specific position by the rotating jig 1 2 〇. Then, the coating liquid 1 to the coating liquid Q applied to the pattern P of the wafer W is irradiated with, for example, an ultraviolet ray of a wavelength of 222 nm and an energy of 7 mW/cm 2 for 2 seconds/cm 2 . The photopolymerization initiator contained in the coating liquid Q is activated by the ultraviolet rays to be irradiated, and the coating liquid Q is cured. Then, as shown in Fig. 6(b), a coating film R on which the coating liquid is cured is formed on the pattern P of the wafer W. The coating film R is formed, for example, at a film thickness of nm to 300 nm. When the coating film R is formed on the pattern p of the wafer w, the wafer W is transported to the bottom coating device 23 by the first transfer arm 1 to form an anti-reflection film. The wafer W on which the anti-reflection film is formed is sequentially transported to the heating device 2, the high-temperature heat treatment device 65, and the high-precision temperature -17-200916200 degree adjustment device 70' by the first transfer arm 1'. After the specific processing, the wafer W is transported to the photoresist coating device 20. In the photoresist coating apparatus 20, 'when a photoresist film is formed on the wafer W, the wafer W is transported to the prebaking apparatus 71 by the first transfer arm, and after the heat treatment is performed, the The transport arm 11 is sequentially transported to the peripheral exposure device 94 and the high-accuracy temperature adjustment device 83, and specific processing is applied to each of the devices. Thereafter, the wafer carrier 1〇1 of the dielectric surface 4 is transported to an exposure device (not shown), and the photoresist film on the wafer W is exposed to a specific pattern. The wafer W on which the exposure process has been completed is transported to the post-exposure baking device 84 by the wafer transfer body ιοί, and a specific process is performed. When the heat treatment in the post-exposure baking apparatus 84 is completed, the wafer W is transported to the high-precision temperature adjustment device 81 by the second transfer arm 11 to be temperature-controlled, and then transported to the development processing device 30 for wafer W. The development process is performed to form a pattern on the photoresist film. Thereafter, the wafer W is transported to the after-exposure baking device 75 by the second transfer arm 1 1 , and after being subjected to the heat treatment, it is transported to the high-accuracy temperature adjusting device 63 to adjust the temperature. Then, the wafer W is transported to the converting device 61 by the first transfer arm, and the wafer carrier 7 is returned to the cassette C' to complete a series of photolithography projects. According to the above embodiment, when the coating liquid Q is applied onto the pattern P of the wafer W, since the liquid film-forming component forming component contained in the coating liquid Q is excellent in fluidity, it is coated. The cloth liquid Q can smoothly spread on the unevenness of the pattern P of the wafer w. Therefore, as shown in Fig. 6(b), the surface of the coating film Ri formed on the pattern p of the wafer W can be flattened. -18- 200916200 The coating liquid Q applied to the pattern P applied to the wafer W is irradiated with ultraviolet rays from the irradiation unit 1 1 , and the coating liquid Q is cured to form a coating on the pattern P of the wafer w. Since the film R is formed, it is not necessary to heat the coating liquid when the coating film R is formed as in the related art, and the sublimation of the coating liquid Q which is easily sublimated by heating can be suppressed as compared with the related art. Therefore, the reduction in the film thickness of the formed coating film R can be suppressed. Further, since the irradiation unit 110 is provided on the upper portion of the processing container 150 and irradiates the wafer W on the rotating jig 12 with ultraviolet rays, the wafer W can be placed in the processing container 丨5 ,, and the wafer w can be placed. Coating of the coating liquid Q and irradiation of ultraviolet rays are performed. Therefore, the treatment from the application of the coating liquid Q to the ultraviolet irradiation can be continuously performed, and the portion can shorten the processing time. The irradiation unit 1 1 0 described in the above embodiment is provided in the upper portion of the processing container 150, but the irradiation unit 1 1 1 is as shown in Fig. 7, even if it is disposed on the processing container 150. 0 a outside can also be. The illuminating unit 1 1 1 is provided in a direction in which the wafer W on the rotating jig 1 20 can be irradiated with ultraviolet rays, and a glass plate which is transparent, for example, colorless and transparent, is used for the upper surface of the 510. At this time, the ultraviolet ray irradiated from the illuminating unit 1 1 1 is irradiated onto the coating liquid Q on the pattern P of the wafer W by the upper surface of 150 Å to form the coating film R. Further, even if the coating liquid Q is scattered into, for example, the processing container 150, the irradiation portion is not contaminated, so that the frequency of maintenance of the irradiation portion U1 can be reduced. The illuminating unit 110 and Π1 described in the above embodiments are provided above the rotating jig 1 2 ,, but the illuminating unit 1 60 is provided at the loading and unloading port 1 5 1 as shown in Fig. 8 to -19-200916200. The upper part is also available. At this time, after the coating liquid Q is applied onto the pattern P of the wafer w from the coating nozzle 130, the wafer W is transferred from the processing container 50 to the outlet 1 5 1 by the first transfer arm 10 When it is outside, the coating liquid Q on the pattern P of the wafer w can be irradiated with ultraviolet rays by the irradiation unit 丨6〇. Therefore, the coating of the coating liquid Q and the irradiation of the ultraviolet ray can be continuously performed on the wafer W in the processing container 150, and the time from the application of the coating liquid Q to the ultraviolet ray irradiation can be shortened. The irradiation units 1 1 〇, 1 1 1 , and i 60 described in the above embodiments are provided above the rotating jig 120 or at the upper portion of the loading port 151, but the irradiation unit 170 is as shown in Fig. 9, It may be attached to the coating nozzle 130. As shown in Fig. 10, the irradiation unit 170 is attached to the coating nozzle 13 by the side surface 1 3 0 a of one of the application nozzles 130 and the side surface 1 7 0 a of one of the irradiation units 170. 0. At this time, by adjusting the position of the upper portion of the irradiation portion 丨7 , or the position of the upper and lower sides of the wafer W, as shown in FIG. 9, the end portion from the wafer W to the end of the wafer W In the range Η, the coating liquid Q on the pattern P of the wafer W is irradiated with ultraviolet rays. In the coating treatment apparatus 24, even if it is provided with control of irradiation of ultraviolet rays from the irradiation unit 170 or application of coating liquid q of the coating liquid 133 supplied to the control unit 133, Part 3 4 0 is also available. The control unit 340 is controlled to apply the coating liquid from the application nozzle 130 to the area of the wafer W, and then irradiate the ultraviolet ray from the irradiation unit 1 70 immediately after the application liquid Q on the area. At this time, since the self-irradiation portion 1 7 〇W is irradiated with ultraviolet rays by the -20-200916200 wafer W rotated by the rotating jig 1 20, only the ultraviolet ray is irradiated to at least the range ,, and the entire coating liquid of the wafer W is cured. Q, the coating film R can be formed. Further, under the control of the control unit 340, the coating liquid Q applied to the pattern 晶圆 of the wafer W is cured by irradiation with ultraviolet rays after being applied to the wafer W, so that the coating liquid Q can be suppressed. sublimation. In addition to the coating nozzle 130 described in the above embodiment, as shown in the first embodiment, the coating nozzle 140 having the slit-like discharge port 140a extending in the X direction may be used. The coating nozzle Μ0 is formed to have a longer width in the X direction than the wafer W as shown in Figs. 12 and 13 . The coating nozzle 140 is movable along the guide rail 136 from the standby region 1 4 1 provided on the outer side of the one end side (the left side in Fig. 3) of the cup cover 122 toward the other end side. The standby area 1 4 1 is configured to accommodate the coating nozzles 1 4 . Further, the irradiation unit may use any of the upper irradiation units 1 1 〇, 1 1 1 and 1 60. Even in this case, after the coating liquid 140 is applied onto the pattern P of the wafer W from the coating nozzle 140, the ultraviolet light is irradiated to the wafer by any one of the irradiation portions 11A, 111, and 160. The coating liquid R on the pattern P of W can form the coating film R. When the coating nozzle 1400 described in the above embodiment is used, the irradiation unit 190 is attached to the coating nozzle even in the width direction of the wafer W in parallel with the coating nozzle 140 as shown in Fig. 14 . 140 is also possible. As shown in Fig. 15, the illuminating unit 190 is attached to the coating nozzle 1400 by the side surface 1 4 0 a of one of the coating nozzles 140 and the side surface 1 90 a of the illuminating unit 190. Further, the coating processing apparatus 24 may be provided with a control unit 200 that controls ultraviolet irradiation from the irradiation of the -21 - 200916200 portion 1 90 or the application of the coating liquid Q by the supply control device i43. The control unit 200 controls the application of the coating liquid 1 from the coating nozzle 1 4 1 to the region of the wafer W, and immediately after the coating liquid Q on the region, the self-illuminating portion 1 90 Irradiation of ultraviolet light. At this time, the coating liquid Q applied to the pattern P of the wafer w is controlled by the control unit 2000, and is cured by irradiation with ultraviolet rays immediately after the application of the wafer W, so that the coating can be suppressed. Sublimation of cloth liquid Q. Further, since the coating nozzle 140 and the irradiation unit 190 move in synchronization, it is possible to control the entire area in the surface of the wafer W to be constant from the application of the coating liquid Q to the irradiation of the ultraviolet ray. The film thickness of the coating film R formed on the pattern P of the wafer W can be made constant. In the above embodiment, the irradiation unit 190 is attached to the application nozzle 140, but the irradiation unit 203 is provided separately from the application nozzle 1400 as shown in Fig. 16. The illuminating unit 2 1 has a robot arm 211 and a moving mechanism 2 1 2 which are independent of the robot arm 134 and the moving mechanism 135 of the coating nozzle 140. The illuminating unit 2 1 0 can be moved along the guide rail 136 from the standby area 2 1 3 provided on the outer side of the cup cover 122 (on the right side in FIG. 16 ) toward the other end side by the moving mechanism 2 1 2 . Move and move in the up and down direction. The standby area 2 1 3 is configured to accommodate the irradiation unit 2 1 0 . At this time, since the irradiation unit 210 moves independently from the coating nozzle 140, it is possible to control the entire area in the plane of the wafer w by adjusting the moving speed of the coating nozzle 140 and the irradiation unit 210. When the cloth coating liquid Q is irradiated with ultraviolet rays, it is constant between -22 and 200916200. Further, the irradiation unit 210, the robot arm 211, and the mechanism 2 1 2 may be provided in many cases as shown in Fig. 17. By providing the illuminating unit 2 1 〇, it is possible to further shorten the irradiation of the coating liquid Q with ultraviolet rays. Further, the above coating processing device 24 is provided inside the coating processing system 1, but the coating processing device 24 may be provided separately from the outside of the polishing processing system 1. In the above embodiment, the irradiation units 1 1 〇, 1 1 1 , 1 60, and 1 2 1 0 are provided in the coating processing device 24, but the irradiation unit 203 is as shown in Fig. 18, even if it is disposed at The first conveying device A1 is also possible. The conveying device A1 has a casing 220, and a loading port 22 1 of the wafer W is formed on one side of the coating processing 24 side of the casing 220. As shown in the figure, the first processing unit group G1 and the second processing unit group G2 side are provided with poles 13 and 13 in the vertical direction, and the first carrier is placed in the column. Lifting mechanism (type) for lifting and lowering the arm 10. Between the poles 13, 13 as shown in Fig. 18, a branch 12 is provided, and the poles 13 and 13 are connected to both ends of the support portion 12. A rotation axis 2a is provided on the support; the first transfer arm 1 is supported by the rotation shaft 12a, and a motor for rotating the drive shaft 11 and horizontally (not shown) is incorporated in the support portion 12, 1 The transport arm 10 rotates, and moves freely even in the horizontal direction. Further, an irradiation portion 23 0 for supporting the ultraviolet rays of the crystals of the first transfer arm 10 is provided above the inside of the casing.

此時，於以塗佈處理裝置24在晶圓W之圖案P 移動 多數 之時 顯像 在塗 90、 如第 第1 裝置 220 第1 3之 無圖 撐部 部12 〇再 移動 轉自 220 照射 上塗 -23- 200916200 佈塗佈液Q之後，晶圓W藉由第1搬運臂1 0，自搬入出 口 221搬運至第1搬運裝置Α1內。然後，在晶圓W被支 撐於第1搬運臂1〇之狀態下，對該晶圓W之圖案Ρ上之 塗佈液Q自照射部23 0照射紫外線，塗佈液Q硬化，其 結果，可以在線內於晶圓W之圖案Ρ上形成塗佈膜R。 接著，針對其他實施形態予以說明。該例中之塗佈處 理裝置24是如第19圖、第20圖所示般，具備有控制後 述一連串動作之電腦程式之控制部340。控制部340構成 控制照射部1 1 0、旋轉驅動部1 2 1、供給控制裝置1 3 3、移 動機構1 3 5等。以成爲特定時間以內之方式，控制從藉由 塗佈噴嘴1 3 0完成塗佈液之塗佈，至藉由照射部1 0開始 照射紫外線爲止之時間。並且，其特定時間，於放置塗佈 塗佈液之晶圓 W之時，設定成該塗佈之塗佈液昇華之量 成爲容許範圍內之時間，例如設定成2秒間。上述電腦程 式儲存於例如硬碟（HD )、軟碟（FD )、記憶卡、CD、 光磁碟（MO )、硬碟等之可讀取之記億媒體。 搭載該實施形態所涉及之塗佈處理裝置24之塗佈顯 像處理系統1如上述般構成，接著，針對以其塗佈顯像處 理系統1所執行之晶圓處理予以說明。 與先前之例相同，首先藉由晶圓搬運體7，自匣盒載 置台5上之匣盒c取出一片在表面形成有特定圖案之晶圓 W，搬運置第3處理裝置群G3之溫度調節裝置60。被搬 運置溫度調節裝置60之晶圓W，被調節成特定溫度，之 後’被搬運置本發明所涉及之塗佈處理裝置24。在橥佈處 -24- 200916200 理裝置24內於後述之晶圓W之圖案上形成塗佈膜。 當在晶圓W之圖案上形成塗佈膜時，晶圚W藉由第 1搬運臂1〇被搬運至底部塗佈裝置23’形成反射防止 膜。形成有反射防止膜之晶圓W ’藉由第1搬運臂1 〇依 序搬運至加熱裝置92、高溫度熱處理裝置65、高精度溫 度調節裝置70，在各裝置施予特定處理，之後，晶圓W 被搬運至光阻塗佈裝置20。 當在光阻塗佈裝置2 0中，形成光阻膜時，晶圓W藉 由第1搬運臂10搬運至預烘烤裝置71，實施加熱處理之 後，接著，藉由第2搬運臂11依序搬運至周邊曝光裝置 94、高精度溫度調節裝置83，在各裝置中，施予特定處 理。之後，藉由介面部4之晶圓搬運體101，搬運至曝光 裝置（無圖式），特定圖案曝光於晶圓 W上之光阻膜。 完成曝光處理之晶圓W藉由晶圓搬運體101而被搬運至 事後曝光烘烤裝置84，實施特定處理。 當完成事後曝光烘烤裝置84中之熱處理時，晶圓W 藉由第2搬運臂11被搬運至高精度溫度調節裝置81而被 溫度調節，之後，被搬運至顯像處理裝置3 0，在晶圓W 上施予顯像處理，在光阻膜形成圖案。之後，晶圓W藉 由第2搬運臂11被搬運至後烘烤裝置75，於施予加熱處 理之後，被搬運至高精度溫度調節裝置63，施予溫度調 節。然後，晶圓W藉由第1搬運臂10被搬運至轉換裝置 61，藉由晶圚搬運體7返回至匣盒C，完成一連串之光微 影工程。 -25- 200916200 接著，針對在塗佈處理裝置24內執行在晶圓W之圖 案上形成例如100 nm〜3 00 nm膜厚之塗佈膜之塗佈處理 方法予以說明。第21圖表示針對形成塗佈膜之塗佈處理 方法之流程。 晶圓W是藉由第1搬運臂10從搬入出口 151被搬運 至處理容器150內，移動至旋轉夾具120之上方。在此， 使旋轉夾具120上昇，自第1搬運臂10轉交晶圓W至旋 轉夾具1 20。然後，將晶圓W吸附於旋轉夾具1 20而水平 保持，使晶圓W下降至特定位置。 接著，藉由旋轉驅動部1 2 1以例如旋轉數5 0 0 r p m使 晶圓W旋轉，並且使塗佈噴嘴13 0移動至晶圓W之中心 部上方（步驟S 1 )。然後，自塗佈噴嘴13 0例如2秒吐 出塗佈液Q至晶圓W之中心部，以旋轉數！ 500 rpm使晶 圓W加速而使旋轉1 5秒（步驟S 2 )。藉由該晶圓w之 旋轉所產生之離心力’使塗佈液Q擴散至晶圓W之圖案p 上。之後’使塗佈噴嘴130自晶圓W之中心部上方移動 至待機區域1 3 7。At this time, when the pattern P of the wafer W is moved by the coating processing device 24, the image is applied to the coating 90, and the first device 220 is moved to the second portion of the first device 220. -23- 200916200 After the cloth coating liquid Q, the wafer W is transported from the loading/unloading port 221 to the first conveying device Α1 by the first conveying arm 10. Then, the coating liquid Q on the pattern W of the wafer W is irradiated with ultraviolet rays from the irradiation portion 23 0 in a state where the wafer W is supported by the first transfer arm 1 , and the coating liquid Q is hardened. As a result, the coating liquid Q is hardened. The coating film R can be formed on the pattern 晶圆 of the wafer W in-line. Next, other embodiments will be described. The coating processing apparatus 24 in this example is provided with a control unit 340 for controlling a series of computer programs to be described later, as shown in Figs. 19 and 20. The control unit 340 constitutes a control irradiation unit 110, a rotation drive unit 1 21, a supply control device 133, a movement mechanism 135, and the like. The time from the application of the coating liquid by the coating nozzle 130 to the irradiation of the ultraviolet light by the irradiation unit 10 is controlled so as to be within a certain time. Further, at a specific time, when the wafer W to which the coating liquid is applied is placed, the amount of sublimation of the coating liquid to be applied is set to a time within an allowable range, for example, set to 2 seconds. The above computer program is stored in a readable medium such as a hard disk (HD), a floppy disk (FD), a memory card, a CD, a magnetic disk (MO), a hard disk, or the like. The coating image processing system 1 equipped with the coating processing apparatus 24 according to the embodiment is configured as described above, and then the wafer processing performed by the coating processing system 1 will be described. As in the previous example, first, a wafer W having a specific pattern formed on the surface is taken out from the cassette c on the cassette mounting table 5 by the wafer carrier 7, and the temperature adjustment of the third processing apparatus group G3 is carried. Device 60. The wafer W to which the temperature adjustment device 60 is transported is adjusted to a specific temperature, and then the coating processing device 24 according to the present invention is transported. A coating film is formed on the pattern of the wafer W to be described later in the cleaning device -24-200916200. When a coating film is formed on the pattern of the wafer W, the wafer W is transported to the undercoating device 23' by the first transfer arm 1 to form an anti-reflection film. The wafer W' on which the anti-reflection film is formed is sequentially transported to the heating device 92, the high-temperature heat treatment device 65, and the high-accuracy temperature adjustment device 70 by the first transfer arm 1 , and a specific process is applied to each device, and then the crystal is applied. The circle W is carried to the photoresist coating device 20. When the photoresist film is formed in the photoresist coating device 20, the wafer W is transported to the prebaking device 71 by the first transfer arm 10, and then subjected to heat treatment, and then, by the second transfer arm 11 The process is carried to the peripheral exposure device 94 and the high-precision temperature adjustment device 83, and specific processing is applied to each device. Thereafter, the wafer carrier 101 of the dielectric surface 4 is transported to an exposure device (not shown), and the specific pattern is exposed to the photoresist film on the wafer W. The wafer W subjected to the exposure processing is transported to the post-exposure baking device 84 by the wafer carrier 101, and a specific process is performed. When the heat treatment in the post-exposure baking apparatus 84 is completed, the wafer W is transported to the high-precision temperature adjustment device 81 by the second transfer arm 11 to be temperature-controlled, and then transported to the development processing device 30, in the crystal A development process is applied to the circle W to form a pattern on the photoresist film. Thereafter, the wafer W is transported to the post-baking device 75 by the second transfer arm 11, and after being subjected to the heat treatment, it is transported to the high-accuracy temperature adjusting device 63 to adjust the temperature. Then, the wafer W is transported to the converting device 61 by the first transfer arm 10, and returned to the cassette C by the wafer carrier 7, thereby completing a series of photolithography projects. -25- 200916200 Next, a coating processing method for forming a coating film having a film thickness of, for example, 100 nm to 300 nm on the pattern of the wafer W in the coating processing apparatus 24 will be described. Fig. 21 shows the flow of a coating treatment method for forming a coating film. The wafer W is transported from the carry-in/out port 151 into the processing container 150 by the first transfer arm 10, and is moved above the rotating jig 120. Here, the rotating jig 120 is raised, and the wafer W is transferred from the first transfer arm 10 to the rotary jig 126. Then, the wafer W is adsorbed to the rotating jig 1 20 to be horizontally held, and the wafer W is lowered to a specific position. Then, the wafer W is rotated by, for example, a rotation number of 5 0 0 p m by the rotation driving unit 1 2 1 , and the coating nozzle 130 is moved above the center portion of the wafer W (step S 1 ). Then, the coating liquid Q is ejected from the coating nozzle 130 for 2 seconds, for example, to the center of the wafer W to rotate the number! The wafer W was accelerated by 500 rpm for 15 seconds (step S2). The coating liquid Q is diffused onto the pattern p of the wafer W by the centrifugal force generated by the rotation of the wafer w. Thereafter, the coating nozzle 130 is moved from above the center portion of the wafer W to the standby region 137.

當塗佈液Q擴散至晶圓W之塗佈p上之全面時，藉 由旋轉夾具1 2 0使晶圓W上昇至特定位置。然後，自照 射部110對被塗佈於晶圓W之圖案p上之塗佈液q，以例 如2秒間/ c m2照射例如波長2 2 2 n m、能量7 m w / c m2之擎 外線（步驟S3 )。藉由該照射之紫外線，塗佈液Q內戶斤 含之光聚合起始劑活性化’塗佈液Q硬化（步驟S 4 )。 依此’在晶圓W之圖案P上形成塗佈液硬化之塗佈膜R -26- 200916200 (步驟S 5 )。 藉由以上之實施形態，當塗佈液Q被塗佈至晶圓W 之圖案P上時’因該塗佈液Q所含之液體狀之塗佈膜形成 成分之流動性佳，故塗佈液Q可以圓滑擴散晶圓W之圖 案P之凹凸上。因此，如第6圖（b)所示般，可以使形 成在晶圓W之圖案P上之塗佈膜R之表面平坦化。 當對光聚合起始劑照射紫外線時，因光聚合起始劑以 極短時間，例如2秒活性化，塗佈液Q硬化，故可以抑制 塗佈液Q之昇華。 再者，因藉由控制部340，將從完成藉由塗佈噴嘴 1 3 0塗佈塗佈液Q至藉由照射佈丨丨〇照射紫外線爲止之時 間，控制在特定時間以內，例如20秒以內，故可以將從 完成塗佈塗佈液Q至開始紫外線照射所昇華之塗佈液Q 之量抑制在容許範圍內，可以將所形成之塗佈膜R之膜厚 的減少抑制在容許範圍內。 爲了在大口徑之晶圓上形成薄膜，使高速旋轉晶圓而 使塗佈液擴散至晶圓上之時，當使用以往之塗佈液，則在 晶圓端產生所謂的「風切」之膜厚不均勻之區域。發生如 此風切之原因具有是以往之塗佈液具有固體狀之塗佈膜形 成成份和溶劑，於晶圓旋轉中塗佈液藉由溶劑之揮發而乾 燥之時，在晶圓端產生亂流，塗佈膜波狀起伏。此點，本 實施形態之塗佈液Q因具有液體狀之塗佈膜形成成份，塗 佈液Q難以乾燥，故不易產生如此之風切。因此，因在晶 圓W上形成薄膜之塗佈膜R，即使使晶圓W高速旋轉’ -27- 200916200 亦可以使所形成之塗佈膜R_之膜厚成爲一定。 在塗佈處理裝置24內如第22圖所示般，又具備有氣 體供給部1 80，依此即使冷卻旋轉夾具1 20上之晶圓W之 周邊之環境亦可。氣體供給部180設置在處理容器150內 之上部。在氣體供給部180之下面形成有多數孔（無圖 式），從該些多數孔朝向下方供給氣體。氣體供給部180 經氣體供給管181而連接於氣體供給源182。再者，在供 給配管1 8 1設置有調整所供給之氣體之溫度及溼度之溫濕 調整裝置1 8 3。 此時，至少在晶圓W之圖案P上塗佈有塗佈液Q之 期間，或是對該所塗佈之塗佈液Q照射紫外線之期間，可 以冷卻藉由溼度調整裝置1 83自氣體供給源1 82所供給之 氣體，自氣體供給部180朝向下方之處理容器150內部供 給冷卻之氣體。其結果，冷卻至處理容器15〇內較常溫低 之溫度，例如15 °C °依此’冷卻塗佈在晶圓W之圖案P 上之塗佈液Q ’可以更抑制塗佈液Q之昇華。 再者，使用其第22圖所示之塗佈處理裝置24，於在 晶圓w之圖案P上塗佈塗佈液Q之後，並且對該所塗佈 之塗佈液照射紫外線之前’即使將晶圓 w之周邊之環境 加熱特定時間亦可。 此時’首先’藉由塗佈噴嘴13〇在晶圓W之圖案P 上塗佈塗佈液Q (第23圖（a))。之後’以第3圖所不 之膜厚檢查裝置9 5測量所塗佈之塗佈液Q之厚度’該測 量結果傳達至控制部3 4 0。在控制部3 4 0中，根據該測量 -28- 200916200 結果，所塗佈之塗佈液Q之厚度較特定厚度後之時，因以 塗佈液Q成爲特定厚度之方式，使塗佈液Q之一部份昇 華，故控制成使晶圓W周邊之環境加熱特定時間。具體 而言，以大厚度之變化是以加熱溫度控制，小厚度之變化 是以加熱時間來控制之方式，算出加熱溫度及時間。然 後，該加熱溫度及時間之算出結果從控制部3 40被傳達至 溫濕度調整裝置1 8 3，以溫濕度調整裝置1 8 3加熱自氣體 供給源〗82所供給之氣體。被加熱之氣體自氣體供給部 1 8 0被供給至處理容器1 5 0內，以特定時間加熱晶圓W之 周邊之環境。然後，使晶圓w之圖案P上之塗佈液Q之 一部份昇華，使塗佈液Q之厚度成爲特定厚度（第23圖 (b))。之後，在殘存於晶圓W之圖案P上之塗佈液Q 成爲特定厚度時，自照射部對所殘存之塗佈液Q照射紫外 線，使該塗佈液Q硬化（第23圖（c ))。依此，可以在 晶圓W之圖案P上形成特定膜厚之塗佈膜R。 再者，如此一來，藉由以特定時間加熱晶圓W之周 邊的環境，亦可以使塗佈於晶圚W之圖案P之凹部份以 外之圖案P表面之塗佈液Q昇華（第24圖（a))。即 是，使形成在圖案P上之塗佈膜R之膜厚成爲零’藉由僅 在圖案P之凹部塡充塗佈液Q，予以硬化’可以消除圖案 P之凹凸而使圖案P之上面平坦化（第24圖（b ))。依 此，可以省略除去晶圓W之圖案P上之塗佈膜R之蝕刻 工程，可以使晶圓W處理之產出量。 再者，例如形成在以上實施形態之塗佈膜R上的光阻 -29- 200916200 膜之圖案非所欲者時，雖然對晶圓w執行再製處理，但 是於以其再製處理剝離塗佈膜R時，即使加熱晶圓W之 周邊環境而剝離塗佈膜R亦可。 此時，首先對形成在塗佈膜R上之光阻膜之圖案¥和 反射防止膜U上照射例如Ο 2電漿’剝離光阻膜之塗佈v 和反射防止膜U (第2 5圖（a))。然後’將晶圓W之周 邊之環境加熱至250 1〜350 °C (第25圖（b))’使塗佈 膜R昇華而剝離（第2 5圖（c ))。 針對該塗佈膜R之昇華，發明者調查結果’明白本發 明之塗佈膜R具以低分子之塗佈膜形成成分，故塗佈膜R 在2 5 0 °C以上之溫度分解而昇華。再者’當考慮晶圓處理 之後續工程（後端製程）之容許溫度時，以3 50°C以下之 溫度加熱爲佳。因此，使塗佈膜R之時之加熱溫度爲25〇 °C ~ 3 5 (TC 爲佳。 在以上之實施形態中，因加熱塗佈膜R而剝離，故如 以往般，不需要使用〇2電漿等，可以減輕對晶圓W上之 圖案P之損傷或消失。依此，可以改善晶圓w之再製處 理之時之良率下降。 再者，加熱以上之實施形態之塗佈膜R而予以剝離之 方法，即使於將光阻膜之圖案V當作罩幕而蝕刻晶圓W 之後，灰化殘存於圖案P上之塗佈膜R之時也爲有效。此 時，將晶圓w之周邊之環境加熱至250°c至3 50 °c (第26 圖（a ))，使塗佈膜R昇華而予以剝離（第2 6圖 (b))。依此，不會傷及晶圓W上之圖案P，可以灰化 -30- 200916200 殘存於圖案P上之塗佈膜R。 並且，在以上之實施形態中，使塗佈於第21圖之步 驟S3〜S5所示之晶圓W之塗佈液Q硬化之工程，藉由對 塗佈液Q照射紫外線，使塗佈液Q傾向於架橋之光聚合 起始劑活性化，使活性化之光聚合起始劑擴散而硬化塗佈 液Q。 在擴散該光聚合起始劑之工程中，以1〇〇 °C〜130 °C塗 佈液，依此可以促進光聚合起始劑之擴散。如此一來，在 本實施形態中之塗佈液Q之硬化工程中，如以往般，加熱 能量並非使塗佈液硬化，因以較以往之加熱溫度低之1 00 °C〜1 3 0 °C之溫度加熱，以短時間使光聚合起始劑擴散， 較以往抑制塗佈液Q之昇華。因此，可以效率佳硬化塗佈 液Q。 以下，藉由加熱本發明之塗佈膜，針對該塗佈膜昇華 予以說明。在本實施例中，第21圖所說明之方法中，在 晶圓之圖案上形成大約140 nm膜厚之塗佈膜，之後以350 °C之溫度加熱晶圓周邊之環境。 在本實施例中，將測量加熱後之塗佈膜之膜厚之經時 變化的結果表示於第27圖。第27圖之縱軸表示塗佈膜之 平均膜厚，橫軸表示加熱時間。當參照第27圖時，塗佈 膜之膜厚於加熱開始時，大約爲1 40 nm，但是經過大約 6 〇秒則減少至大約1 0 nm。因此，可知藉由將本發明之塗 佈膜以特定溫度液如3 5 0°C加熱，該塗佈膜則昇華。 並且，在以上之實施形態所形成之塗佈膜R即使爲用 -31 - 200916200 以在晶圓W形成圖案P之光阻膜亦可。如此所形成之塗 佈膜R可以當作光阻膜使用，可以省略形成以往之光阻膜 之工程。 以上，雖然一面參照附件圖面一面針對本發明之較佳 實施形態予以說明，但是本發明並不限定於該些例。若爲 該項技藝者應可在申請專利範圍之思想的範疇內，想出各 種變更例或者修正例。即使針對該些當然屬於本發明之技 術範圍。本發明不限於該例，可採用各種態樣。本發明基 板亦可適用於晶圓以外之FPD (平面顯示器）、光罩用之 罩幕標線板等之其他基板之時。 本發明有效利用於在形成於基板之圖案上形成塗佈膜 之時。 【圖式簡單說明】 第1圖爲模式性表示搭載本實施形態所涉及之塗佈處 理裝置之塗佈顯像處理系統之構成槪略的平面圖。 第2圖爲本實施形態所涉及之塗佈顯像處理系統之正 面圖。 第3圖爲本實施形態所涉及之塗佈顯像處理系統之背 面圖。 第4圖爲模式性表示本實施形態所涉及之塗佈處理裝 置之構成的槪略的縱剖面圖。 第5圖爲模式性表示本實施形態所涉及之塗佈處理裝 置之構成之槪略的平面圖。 -32- 200916200 第6圖爲表示形成在本實施形態所涉及之晶圓之圖案 上之塗佈膜之狀態的說明圖，（a )爲表示照射紫外線之 前的狀態，（b )爲表示照射紫外線之後的狀態。 第7圖爲模式性表示其他形態所涉及之塗佈處理裝置 之構成之槪略的縱剖面圖。 第8圖爲模式性表示其他形態所涉及之塗佈處理裝置 之構成之槪略的縱剖面圖。 第9圖爲模式性表示其他形態所涉及之塗佈處理裝置 之構成之槪略的縱剖面圖。 第1 0圖爲照射部附設於塗佈噴嘴之時的斜視圖。 第1 1圖爲具有縫隙狀之吐出口的塗佈噴嘴之斜視 圖。 第1 2圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成之槪略的縱剖面圖。 第1 3圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成之槪略的平面圖。 第1 4圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成之槪略的平面圖。 第1 5圖爲照射部附設於塗佈噴嘴之時的斜視圖。 第1 6圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成的槪略的平面圖。 第1 7圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成的槪略的平面圖。 第1 8圖爲模式性表示其他形態所涉及之塗佈處理裝 -33- 200916200 置及搬運裝置之構成槪略的縱剖面圖。 第1 9圖爲模式性表示其他實施形態所涉及之塗佈處 理裝置之構成槪略的縱剖面圖。 第2 0圖爲模式性表示其他實施形態所涉及之塗佈處 理裝置之構成槪略的平面圖。 第21圖爲表示其他實施形態所涉及之塗佈膜之形成 方法之流程圖。 第22圖爲模式性表示其他形態所涉及之塗佈處理裝 置之構成槪略的縱剖面圖。 第2 3圖爲模式性表示其他形態所涉及之塗佈膜形成 在晶圓上爲止之塗佈液之狀態的作用說明圖，（a )表示 塗佈塗佈液之後的狀態，（b )爲表示之後加熱之狀態， (c )爲表示加熱後照射紫外線之狀態。 第24圖爲模式性表示其他形態所涉及之塗佈膜形成 在晶圓上爲止之塗佈液之狀態的作用說明圖，（a )表示 藉由加熱使所有塗佈液昇華之狀態，（b )爲表示之後塡 充塗佈液而硬化之狀態。 第25圖爲表示於再製處理之時，表示晶圓之圖案上 之塗佈膜和光阻膜剝離之樣子的作用說明圖’ （a )表示 藉由電漿之照射剝離光阻膜和反射防止膜之狀態’ （b ) 爲表示加熱晶圓周邊環境之狀態’ （c )爲表示使塗佈膜 昇華而剝離之狀態。 第26圖爲表示使晶圓之圖案上之塗佈膜灰化之樣子 的作用說明圖，（a)爲表示加熱之狀態’ （b)爲表不使 -34- 200916200 塗佈膜昇華而剝離之狀態。 第27圖爲表示以35(TC加熱晶圓之圖案上之塗佈膜之 時的膜厚之經時變化的曲線圖。 第28圖爲表示形成在以往之晶圓之圖案上之塗佈膜 之狀態的說明圖。 【主要元件符號說明】 1 :塗佈顯像處理系統 2 :匣盒台 3 :處理台 4 :介面部 5 :匣盒載置台 6 :搬運路 7 :晶圓搬運體 10 :第1搬運臂 1 1 :第2搬運臂 1 2 :支撐部 1 2 a :旋轉軸 1 3 :桿柱 2〇 :光阻塗佈裝置 2 ]:光阻塗佈裝置 22 :光阻塗佈裝置 23 :底部塗佈裝置 24 :塗佈處理裝置 -35- 200916200 3 0〜3 4 :顯像處理裝置 4 0 :化學室 4 1 :化學室 60 :溫度調節裝置 6 1 :轉換裝置 62〜64 :高精度溫度調節裝置 65〜68:高溫度熱處理裝置 71〜74 :預烘烤裝置 75〜79 :後烘烤裝置 8 0〜8 3 :高精度溫度調節裝置 84〜89:事後曝光烘烤裝置 90 :附著裝置 9 1 :附著裝置 92 :加熱裝置 93 :加熱裝置 94 :周邊曝光裝置 9 5 :膜厚檢查裝置 1 〇 〇 :搬運路 1 〇 1 :晶圓搬運體 1 〇 2 :緩衝匣盒 1 1 〇 :照射部 1 2 0 :旋轉夾具 1 2 1 :旋轉驅動部 122 :杯罩體 -36- 200916200 1 2 3 :排液口 124 :排液管 1 3 0 :塗佈噴嘴 1 3 1 :塗佈液供給管 1 3 2 :塗佈液供給源 1 3 3 :供給控制裝置 1 3 4 :機械臂 1 3 5 :移動機構 1 3 6 :導軌 1 3 7 :待機區域 1 4 0 :塗佈噴嘴 14 0a:吐出口 1 4 1 :待機區域 1 5 0 :處理容器 151 :搬入出口 152 :開關快門 1 7 0 :照射部 1 8 0 :氣體供給部 1 8 1 :氣體供給管 182 :氣體供給源 1 8 3 :溫溼度調整裝置 1 9 0 :照射部 2 0 0 :控制部 2 1 1 :機械臂 -37- 200916200 2 1 2 :移動機構 2 1 3 :待機區域 2 2 0 :框體 221 :搬入出口 23 0 :照射部 3 4 0 :控制部 G1〜G5 :處理裝置群 A1 :第1搬運裝置 A2 :第2搬運裝置 W :晶圓 C :匣盒 -38-When the coating liquid Q spreads over the entire surface of the coating p of the wafer W, the wafer W is raised to a specific position by the rotating jig 1208. Then, the coating liquid q applied to the pattern p of the wafer W from the irradiation unit 110 is irradiated with, for example, a wavelength of 2 2 2 nm and an energy of 7 mw / c m2 for an interval of 2 seconds/cm 2 (steps) S3). By the ultraviolet light to be irradiated, the photopolymerization initiator in the coating liquid Q is activated to cure the coating liquid Q (step S4). According to this, a coating film R -26- 200916200 in which the coating liquid is hardened is formed on the pattern P of the wafer W (step S 5 ). According to the above embodiment, when the coating liquid Q is applied onto the pattern P of the wafer W, the liquidity of the coating film forming component contained in the coating liquid Q is good, so coating is performed. The liquid Q can smoothly spread on the unevenness of the pattern P of the wafer W. Therefore, as shown in Fig. 6(b), the surface of the coating film R formed on the pattern P of the wafer W can be flattened. When the photopolymerization initiator is irradiated with ultraviolet rays, the photopolymerization initiator is activated in a very short time, for example, 2 seconds, and the coating liquid Q is hardened, so that sublimation of the coating liquid Q can be suppressed. Further, the control unit 340 controls the time from when the coating liquid Q is applied by the application nozzle 130 to the time when the ultraviolet ray is irradiated by the irradiation cloth, and is controlled within a certain time, for example, 20 seconds. In addition, the amount of the coating liquid Q which is sublimated from the completion of the application of the coating liquid Q to the start of the ultraviolet irradiation can be suppressed within the allowable range, and the reduction in the film thickness of the formed coating film R can be suppressed to the allowable range. Inside. In order to form a thin film on a large-diameter wafer and to rotate the wafer at a high speed to spread the coating liquid onto the wafer, when a conventional coating liquid is used, a so-called "wind cutting" is generated at the wafer end. An area where the film thickness is uneven. The reason why such a wind cut occurs is that the coating liquid has a solid coating film forming component and a solvent, and the coating liquid is turbulent at the wafer end when the coating liquid is dried by evaporation of the solvent during the rotation of the wafer. The coating film is undulating. In this regard, since the coating liquid Q of the present embodiment has a liquid coating film forming component, the coating liquid Q is difficult to dry, so that such wind cutting is less likely to occur. Therefore, by forming the coating film R of the film on the wafer W, the film thickness of the formed coating film R_ can be made constant even if the wafer W is rotated at a high speed -27-200916200. In the coating processing apparatus 24, as shown in Fig. 22, a gas supply unit 880 is provided, and the environment around the wafer W on the rotary jig 1 20 can be cooled. The gas supply unit 180 is disposed at an upper portion in the processing container 150. A plurality of holes (not shown) are formed under the gas supply unit 180, and gas is supplied downward from the plurality of holes. The gas supply unit 180 is connected to the gas supply source 182 via the gas supply pipe 181. Further, the supply pipe 1 8 1 is provided with a temperature and humidity adjusting device 1 8 3 for adjusting the temperature and humidity of the supplied gas. At this time, at least the period during which the coating liquid Q is applied to the pattern P of the wafer W or the period during which the applied coating liquid Q is irradiated with ultraviolet rays can be cooled from the gas by the humidity adjusting device 1 83. The gas supplied from the supply source 182 is supplied with a cooled gas from the gas supply unit 180 toward the inside of the processing container 150. As a result, it is possible to further suppress the sublimation of the coating liquid Q by cooling to a temperature lower than a normal temperature in the processing vessel 15 at a temperature lower than a normal temperature, for example, 15 ° C °, thereby cooling the coating liquid Q applied on the pattern P of the wafer W. . Further, after applying the coating liquid Q on the pattern P of the wafer w using the coating processing apparatus 24 shown in FIG. 22, and before irradiating the applied coating liquid with ultraviolet rays, The environment around the wafer w can be heated for a specific time. At this time, the coating liquid Q is applied to the pattern P of the wafer W by the coating nozzle 13 first (Fig. 23(a)). Then, the thickness of the applied coating liquid Q is measured by the film thickness inspection device 915 which is not shown in Fig. 3, and the measurement result is transmitted to the control unit 340. In the control unit 340, based on the result of the measurement -28-200916200, when the thickness of the applied coating liquid Q is larger than the specific thickness, the coating liquid Q is made to have a specific thickness. One of the Q parts is sublimated, so it is controlled to heat the environment around the wafer W for a specific time. Specifically, the change in the large thickness is controlled by the heating temperature, and the change in the small thickness is controlled by the heating time to calculate the heating temperature and time. Then, the calculation result of the heating temperature and time is transmitted from the control unit 340 to the temperature and humidity adjusting device 183, and the temperature and humidity adjusting device 186 heats the gas supplied from the gas supply source 82. The heated gas is supplied from the gas supply unit 180 to the processing container 150, and the environment around the wafer W is heated for a specific time. Then, a part of the coating liquid Q on the pattern P of the wafer w is sublimated so that the thickness of the coating liquid Q becomes a specific thickness (Fig. 23(b)). After that, when the coating liquid Q remaining on the pattern P of the wafer W has a specific thickness, the coating liquid Q remaining is irradiated with ultraviolet rays from the irradiation portion to cure the coating liquid Q (Fig. 23(c) ). Accordingly, a coating film R having a specific film thickness can be formed on the pattern P of the wafer W. Furthermore, by heating the environment around the wafer W at a specific time, the coating liquid Q applied to the surface of the pattern P other than the concave portion of the pattern P of the wafer W can be sublimated ( Figure 24 (a)). In other words, the film thickness of the coating film R formed on the pattern P is made zero by hardening the coating liquid Q only in the concave portion of the pattern P, and the unevenness of the pattern P can be eliminated to make the pattern P upper. Flattening (Fig. 24(b)). Accordingly, the etching process for removing the coating film R on the pattern P of the wafer W can be omitted, and the throughput of the wafer W can be processed. Further, for example, when the pattern of the photoresist -29-200916200 film formed on the coating film R of the above embodiment is not desired, the wafer w is subjected to a re-fabrication treatment, but the coating film is peeled off by the re-fabrication treatment. In the case of R, the coating film R may be peeled off even if the surrounding environment of the wafer W is heated. At this time, first, the pattern of the photoresist film formed on the coating film R and the anti-reflection film U are irradiated with, for example, a coating of the Ο 2 plasma 'peeling photoresist film' and a reflection preventing film U (Fig. 25) (a)). Then, the environment around the wafer W is heated to 250 1 to 350 ° C (Fig. 25 (b)) to peel the coating film R and peel off (Fig. 25 (c)). The inventors have found out that the coating film R of the present invention has a low molecular weight coating film forming component, so that the coating film R is decomposed and sublimated at a temperature of 250 ° C or higher. . Furthermore, when considering the allowable temperature of the subsequent processing (back-end process) of the wafer processing, it is preferable to heat at a temperature of 3 50 ° C or lower. Therefore, the heating temperature at the time of coating the film R is 25 〇 ° C to 3 5 (TC is preferable. In the above embodiment, since the coating film R is peeled off by heating, the conventional film does not need to be used. 2 plasma or the like can reduce the damage or disappearance of the pattern P on the wafer W. Accordingly, the yield reduction at the time of the reprocessing of the wafer w can be improved. Further, the coating film of the above embodiment is heated. The method of peeling off by R is effective even when the wafer W is etched by using the pattern V of the photoresist film as a mask, and ashing the coating film R remaining on the pattern P is effective. The environment around the circle w is heated to 250 ° C to 3 50 °c (Fig. 26 (a)), and the coating film R is sublimated and peeled off (Fig. 26 (b)). Accordingly, it does not hurt. And the pattern P on the wafer W can ash the coating film R remaining on the pattern P from -30 to 200916200. Further, in the above embodiment, the application is performed in steps S3 to S5 of Fig. 21. In the process of hardening the coating liquid Q of the wafer W, the coating liquid Q is irradiated with ultraviolet rays to activate the photopolymerization initiator which tends to bridge the coating liquid Q, and is activated. The photopolymerization initiator diffuses to harden the coating liquid Q. In the process of diffusing the photopolymerization initiator, the coating liquid is applied at a temperature of from 1 ° C to 130 ° C, whereby the photopolymerization initiator can be promoted. In the hardening process of the coating liquid Q in the present embodiment, as in the prior art, the heating energy does not cure the coating liquid, and is lower than the conventional heating temperature by 100 ° C to 1 3 Heating at a temperature of 0 ° C causes the photopolymerization initiator to diffuse in a short period of time, and suppresses sublimation of the coating liquid Q. Therefore, the coating liquid Q can be hardened with efficiency. Hereinafter, the coating film of the present invention is heated. In the present embodiment, in the method illustrated in FIG. 21, a coating film having a film thickness of about 140 nm is formed on the pattern of the wafer, and then heated at a temperature of 350 ° C. In the present embodiment, the result of measuring the film thickness of the coating film after heating is shown in Fig. 27. The vertical axis of Fig. 27 indicates the average film thickness of the coating film. The horizontal axis represents the heating time. When referring to Fig. 27, the film thickness of the coating film is heated to be opened. When it is about 1 40 nm, it is reduced to about 10 nm after about 6 sec. Therefore, it is known that the coating film of the present invention is heated at a specific temperature liquid such as 350 ° C. Further, the coating film R formed in the above embodiment may be a photoresist film having a pattern P formed on the wafer W by using -31 - 200916200. The coating film R thus formed may be regarded as Although the photoresist film is used, the process of forming the conventional photoresist film can be omitted. Although the preferred embodiment of the present invention has been described above with reference to the attached drawings, the present invention is not limited to these examples. The artist should be able to come up with various changes or amendments within the scope of the idea of applying for a patent. Even for these, of course, it belongs to the technical scope of the present invention. The present invention is not limited to this example, and various aspects can be employed. The substrate of the present invention can also be applied to other substrates such as FPD (flat display) other than wafers, mask reticle for photomasks, and the like. The present invention is effective for use in forming a coating film on a pattern formed on a substrate. [Brief Description of the Drawings] Fig. 1 is a plan view schematically showing the configuration of a coating development processing system in which the coating processing apparatus according to the present embodiment is mounted. Fig. 2 is a front elevational view showing a coating development processing system according to the embodiment. Fig. 3 is a rear elevational view of the coating development processing system according to the embodiment. Fig. 4 is a schematic longitudinal sectional view schematically showing the configuration of the coating processing apparatus according to the embodiment. Fig. 5 is a plan view schematically showing the configuration of the coating processing apparatus according to the embodiment. -32- 200916200 Fig. 6 is an explanatory view showing a state of a coating film formed on the pattern of the wafer according to the embodiment, wherein (a) is a state before ultraviolet irradiation, and (b) is ultraviolet irradiation. After the state. Fig. 7 is a schematic longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 8 is a schematic longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 9 is a schematic longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 10 is a perspective view showing the irradiation unit attached to the coating nozzle. Fig. 1 is a perspective view of a coating nozzle having a slit-like discharge port. Fig. 1 is a schematic longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 13 is a schematic plan view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 14 is a plan view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 15 is a perspective view showing the irradiation unit attached to the coating nozzle. Fig. 16 is a schematic plan view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 17 is a schematic plan view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 18 is a longitudinal cross-sectional view schematically showing a configuration of a coating processing apparatus according to another aspect. -33- 200916200. Fig. 19 is a longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 20 is a plan view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 21 is a flow chart showing a method of forming a coating film according to another embodiment. Fig. 22 is a longitudinal sectional view schematically showing the configuration of a coating processing apparatus according to another embodiment. Fig. 2 is a view for explaining the action of the state of the coating liquid formed on the wafer by the coating film according to another embodiment, wherein (a) shows the state after the coating liquid is applied, and (b) shows The state after heating is indicated, and (c) is a state in which ultraviolet rays are irradiated after heating. Fig. 24 is an explanatory view showing the action of the state of the coating liquid formed on the wafer by the coating film according to another embodiment, and (a) shows a state in which all the coating liquids are sublimated by heating, (b) ) is a state in which it is hardened by filling the coating liquid. Fig. 25 is a view showing the action of the peeling of the coating film and the photoresist film on the pattern of the wafer at the time of the remanufacturing process. (a) shows that the photoresist film and the anti-reflection film are peeled off by plasma irradiation. The state '(b) is a state indicating that the environment around the wafer is heated' (c) is a state in which the coating film is sublimated and peeled off. Fig. 26 is an operation explanatory view showing a state in which a coating film on a pattern of a wafer is ashed, and (a) shows a state of heating '(b) is a peeling of the coating film of -34 - 200916200. State. Fig. 27 is a graph showing the temporal change of the film thickness at the time of coating the coating film on the pattern of the TC (35). Fig. 28 is a view showing the coating film formed on the pattern of the conventional wafer. (Description of main component symbols) 1 : Coating development processing system 2 : cassette table 3 : processing table 4 : interface surface 5 : cassette mounting table 6 : conveying path 7 : wafer carrier 10 : 1st conveyance arm 1 1 : 2nd conveyance arm 1 2 : support part 1 2 a : rotation axis 1 3 : pole 2〇: photoresist coating apparatus 2 ]: photoresist coating apparatus 22: photoresist coating Device 23: Bottom coating device 24: Coating processing device - 35 - 200916200 3 0 to 3 4 : Development processing device 40: Chemical chamber 4 1 : Chemical chamber 60: Temperature adjustment device 6 1 : Conversion device 62 to 64 : High-precision temperature adjustment devices 65 to 68: High-temperature heat treatment devices 71 to 74: Pre-baking devices 75 to 79: Post-baking devices 8 0 to 8 3 : High-precision temperature adjustment devices 84 to 89: Post-exposure baking devices 90: attachment device 9 1 : attachment device 92 : heating device 93 : heating device 94 : peripheral exposure device 9 5 : film thickness inspection device 1 〇〇 : transportation path 1 〇 1 : Wafer carrier 1 〇 2 : Buffer cassette 1 1 〇: Irradiation unit 1 2 0 : Rotary jig 1 2 1 : Rotary drive unit 122 : Cup cover - 36 - 200916200 1 2 3 : Drain port 124 : Discharge Tube 1 3 0 : coating nozzle 1 3 1 : coating liquid supply pipe 1 3 2 : coating liquid supply source 1 3 3 : supply control device 1 3 4 : robot arm 1 3 5 : moving mechanism 1 3 6 : guide rail 1 3 7 : Standby area 1 4 0 : Coating nozzle 14 0a: Exhaust port 1 4 1 : Standby area 1 5 0 : Processing container 151 : Carry-in port 152 : Switching shutter 1 7 0 : Irradiation part 1 8 0 : Gas supply Part 1 8 1 : gas supply pipe 182 : gas supply source 1 8 3 : temperature and humidity adjustment device 1 9 0 : irradiation unit 2 0 0 : control unit 2 1 1 : robot arm - 37 - 200916200 2 1 2 : moving mechanism 2 1 3 : Standby area 2 2 0 : Frame 221 : Carry-in port 23 0 : Irradiation unit 3 4 0 : Control unit G1 to G5 : Processing unit group A1 : First transport unit A 2 : Second transport unit W : Wafer C :匣盒-38-

Claims (1)

200916200 十、申請專利範圍 1. 一種塗佈處理裝置，係在形成於基板之圖案上形成 塗佈膜，其特徵爲：具有 處理谷，具有用以將基板搬入搬出之搬入出口，而 收容基板； 塗佈噴嘴，在收容於上述處理容器內之基板的圖案 上，塗佈含有液體狀之塗佈膜形成成份之塗佈液；和 照射部，對塗佈於上述基板之圖案上之塗佈液照射紫 外線之照射部。 2. 如申請專利範圍第1項所記載之塗佈處理裝置，其 中，上述照射部設置在上述處理容器之上部。 3 ·如申請專利範圍第1項所記載之塗佈處理裝置，其 中，上述照射部設置在上述搬入出口之上部。 4 .如申請專利範圍第1項所記載之塗佈處理裝置，其 中，在上述處理容器內具有保持基板之旋轉自如之旋轉夾 具， 藉由上述照射部對基板之圖案上之塗佈液照射紫外線 之範圍，爲從基扳之中心至基板之端部爲止之區域以上。 5 ·如申請專利範圍第4項所記載之塗佈處理裝置，其 中，上述照射部附設在上述塗佈噴嘴。 6.如申請專利範圍第1項所記載之塗佈處理裝置，其 中，上述塗佈噴嘴爲具有延伸於基板之寬方向之縫隙狀之 吐出口的噴嘴， 上述照射部具有與上述塗佈噴嘴平行延伸於基板之寬 -39- 200916200 方向之形態，與上述塗佈噴嘴同步移動。 7 _如申請專利範圍第6項所記載之塗佈處理裝置，其 中，上述照射部附設在上述塗佈噴嘴。 8 _如申請專利範圍第6項所記載之塗佈處理裝置，其 中，上述塗佈噴嘴和上述照射部具有獨立之移動機構。 9 .如申請專利範圍第6項所記載之塗佈處理裝置，其 中，上述照射部爲多數設置。 1 〇.如申請專利範圍第4項所記載之塗佈處理裝置， 其中’具有控制成對自上述塗佈噴嘴將塗佈液塗佈在基板 區域上之後的該區域上之塗佈液，緊接著自上述照射部照 射紫外線的控制部。 1 1 · 一種基板處理系統，具有在形成於基板之圖案上 塗佈塗佈液之塗佈處理裝置，和將基板搬入搬出至上述塗 佈處理裝置之搬運裝置，其特徵爲： 上述搬運裝置具有支撐基板而予以搬運之搬運臂，和 對以上述搬運臂所支撐之基板，將紫外線照射至該基板之 圖案上之塗佈液的照射部。 12.—種塗佈處理方法，在形成於基板之圖案上形成 塗佈膜，其特徵爲： 形成上述塗佈膜之塗佈液包含液體狀之塗佈膜形成成 份和溶劑’上述塗佈膜形成成份含有光聚合起始劑，具有 在基板之圖案上塗佈上述塗佈液之塗佈工程；和 對塗佈於上述基板之圖案上之塗佈液照射紫外線，使 上述光聚合起始劑活性化而形成塗佈膜之照射工程。 -40- 200916200 1 3 ·如申請專利範圍第1 2項所記載之塗佈處理方法， 其中，將從完成上述塗佈工程至開始上述照射工程爲止之 時間，控制成事先所預定之時間以內。 1 4 ·如申請專利範圍第1 2項所記載之塗佈處理方法， 其中，在基板面內之所有區域，控制成從在上述塗佈工程 中塗佈塗佈液至在上述照射工程中照射紫外線爲止之時間 成爲一定。 1 5 ·如申請專利範圍第1 2項所記載之塗佈處理方法， 其中，對將塗佈液塗佈於基板之區域上之後的該區域上之 塗佈液，緊接著執行上述照射工程中之紫外線之照射。 1 6 .如申請專利範圍第1 2項所記載之塗佈處理方法， 其中，上述塗佈工程及/或上述照射工程係冷卻基板周邊 之環境而被執行。 1 7 ·如申請專利範圍第1 2項所記載之塗佈處理方法， 其中，於上述塗佈工程之後，並且上述照射工程之前，具 有以特定時間加熱基板周邊之環境，使塗佈於上述基板之 圖案上之塗佈液昇華至成爲特定厚度爲止之加熱工程。 1 8 ·如申請專利範圍第1 2項所記載之塗佈處理方法， 其中，於上述照射工程之後，具有以特定時間加熱基板周 邊之環境，使形成在上述基板之圖案上之塗佈膜昇華之加 熱工程。 19.如申請專利範圍第12項所記載之塗佈處理方法， 其中，上述塗佈膜爲用以在基板形成圖案之光阻膜。 20 · —種可讀取之電腦記憶媒體，爲了藉由塗佈處理 -41 - 200916200 裝置或 圖案上 板處理 形 份和溶 上 上之塗 射紫外 射工程 是基板處理系統實行將塗佈膜形成在形成於基板之 之塗佈處理方法，儲存有控制該塗佈處理裝置或基 系統之控制部之電腦上動作的程式，其特徵爲： 成上述塗佈膜之塗佈液包含液體狀之塗佈膜形成成 劑’上述塗佈膜形成成份含有光聚合起始劑， 述塗佈處理方法具有將上述塗佈液塗佈於基板圖案 佈工程’和對塗佈於上述基板之圖案上之塗佈液照 Μ ’使上述光聚合起始劑活性化而形成塗佈膜之照 -42-200916200 X. Patent Application No. 1. A coating processing apparatus for forming a coating film on a pattern formed on a substrate, characterized in that it has a processing valley, and has a loading and unloading opening for loading and unloading the substrate, and accommodating the substrate; a coating nozzle that applies a coating liquid containing a liquid coating film forming component to a pattern of a substrate housed in the processing container; and an irradiation portion that applies a coating liquid applied to the pattern of the substrate An irradiation unit that irradiates ultraviolet rays. 2. The coating processing apparatus according to claim 1, wherein the irradiation unit is provided on an upper portion of the processing container. The coating processing apparatus according to claim 1, wherein the irradiation unit is provided at an upper portion of the loading/outlet. The coating processing apparatus according to the first aspect of the invention, wherein the processing container has a rotating jig for holding the substrate, and the coating liquid on the pattern of the substrate is irradiated with ultraviolet rays by the irradiation unit. The range is from the center of the base plate to the end of the substrate. The coating processing apparatus according to claim 4, wherein the irradiation unit is attached to the coating nozzle. 6. The coating processing apparatus according to claim 1, wherein the coating nozzle is a nozzle having a slit-shaped discharge port extending in a width direction of the substrate, and the irradiation portion has a parallel to the coating nozzle. The shape extending in the direction of the width -39 - 200916200 of the substrate moves synchronously with the coating nozzle. The coating processing apparatus according to claim 6, wherein the irradiation unit is attached to the coating nozzle. The coating processing apparatus according to claim 6, wherein the coating nozzle and the irradiation unit have independent moving mechanisms. 9. The coating processing apparatus according to claim 6, wherein the irradiation unit is provided in a plurality of places. The coating processing apparatus according to the fourth aspect of the invention, wherein the coating liquid is controlled to be applied to the region after the coating liquid is applied to the substrate region from the coating nozzle, Next, the control unit that irradiates the ultraviolet ray from the irradiation unit is irradiated. 1 1 A substrate processing system having a coating processing apparatus that applies a coating liquid on a pattern formed on a substrate, and a conveying apparatus that carries the substrate into and out of the coating processing apparatus, wherein the conveying apparatus has A transfer arm that supports the substrate and transports, and an irradiation portion that applies ultraviolet rays to the coating liquid on the pattern of the substrate on the substrate supported by the transfer arm. 12. A coating treatment method for forming a coating film on a pattern formed on a substrate, wherein: the coating liquid for forming the coating film comprises a liquid coating film forming component and a solvent 'the above coating film The forming component contains a photopolymerization initiator, and has a coating process for applying the coating liquid on the pattern of the substrate; and irradiating the coating liquid coated on the pattern of the substrate with ultraviolet rays to cause the photopolymerization initiator The irradiation process of forming a coating film by activation. The coating treatment method according to the first aspect of the invention, wherein the time from completion of the coating process to the start of the irradiation process is controlled to be within a predetermined time. The coating treatment method according to claim 12, wherein all the regions in the surface of the substrate are controlled to be applied from the coating process to the irradiation project The time until the ultraviolet ray is fixed. The coating treatment method according to the first aspect of the invention, wherein the coating liquid on the region after the coating liquid is applied to the region of the substrate is subsequently subjected to the irradiation operation described above. Irradiation of ultraviolet light. The coating treatment method according to claim 12, wherein the coating process and/or the irradiation process is performed by cooling an environment around the substrate. The coating treatment method according to claim 12, wherein after the coating process and before the irradiation process, the environment around the substrate is heated for a specific time to be applied to the substrate. The coating liquid on the pattern is sublimated to a heating process up to a specific thickness. The coating treatment method according to claim 12, wherein after the irradiation operation, the coating film is sublimated by heating the periphery of the substrate at a specific time to heat the coating film formed on the pattern of the substrate. Heating engineering. The coating treatment method according to claim 12, wherein the coating film is a photoresist film for forming a pattern on a substrate. 20 · A readable computer memory medium, in order to process the coated film by coating treatment -41 - 200916200 device or pattern on the plate and the upper surface of the sprayed UV project In the coating processing method formed on the substrate, a program for operating on a computer that controls the coating processing device or the control unit of the base system is stored, wherein the coating liquid of the coating film contains a liquid coating The film forming agent 'the coating film forming component contains a photopolymerization initiator, and the coating treatment method has the coating liquid applied to the substrate pattern cloth and the coating applied to the pattern of the substrate Cloth liquid Μ 'Photographing the photopolymerization initiator to form a coating film-42-
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WO2015024333A1 (en) * 2013-08-21 2015-02-26 北京京东方光电科技有限公司 Sealant coating device and method, and method for achieving alignment
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