JP6134522B2 - 気相成長装置および気相成長方法 - Google Patents

気相成長装置および気相成長方法 Download PDF

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Publication number
JP6134522B2
JP6134522B2 JP2013016015A JP2013016015A JP6134522B2 JP 6134522 B2 JP6134522 B2 JP 6134522B2 JP 2013016015 A JP2013016015 A JP 2013016015A JP 2013016015 A JP2013016015 A JP 2013016015A JP 6134522 B2 JP6134522 B2 JP 6134522B2
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gas
gas flow
lateral
flow path
channel
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Japanese (ja)
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JP2014146767A5 (cg-RX-API-DMAC7.html
JP2014146767A (ja
Inventor
拓未 山田
拓未 山田
佐藤　裕輔
裕輔 佐藤
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Nuflare Technology Inc
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Nuflare Technology Inc
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Priority to JP2013016015A priority Critical patent/JP6134522B2/ja
Priority to TW103101697A priority patent/TWI494469B/zh
Priority to US14/164,498 priority patent/US9624603B2/en
Priority to CN201410041218.1A priority patent/CN103966574B/zh
Priority to KR1020140010238A priority patent/KR101610638B1/ko
Priority to DE102014201554.5A priority patent/DE102014201554A1/de
Publication of JP2014146767A publication Critical patent/JP2014146767A/ja
Publication of JP2014146767A5 publication Critical patent/JP2014146767A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2013016015A 2013-01-30 2013-01-30 気相成長装置および気相成長方法 Active JP6134522B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013016015A JP6134522B2 (ja) 2013-01-30 2013-01-30 気相成長装置および気相成長方法
TW103101697A TWI494469B (zh) 2013-01-30 2014-01-17 氣相成長裝置以及氣相成長方法
US14/164,498 US9624603B2 (en) 2013-01-30 2014-01-27 Vapor phase growth apparatus having shower plate with multi gas flow passages and vapor phase growth method using the same
KR1020140010238A KR101610638B1 (ko) 2013-01-30 2014-01-28 기상 성장 장치 및 기상 성장 방법
CN201410041218.1A CN103966574B (zh) 2013-01-30 2014-01-28 气相生长装置及气相生长方法
DE102014201554.5A DE102014201554A1 (de) 2013-01-30 2014-01-29 Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013016015A JP6134522B2 (ja) 2013-01-30 2013-01-30 気相成長装置および気相成長方法

Publications (3)

Publication Number Publication Date
JP2014146767A JP2014146767A (ja) 2014-08-14
JP2014146767A5 JP2014146767A5 (cg-RX-API-DMAC7.html) 2014-12-04
JP6134522B2 true JP6134522B2 (ja) 2017-05-24

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JP2013016015A Active JP6134522B2 (ja) 2013-01-30 2013-01-30 気相成長装置および気相成長方法

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Country Link
US (1) US9624603B2 (cg-RX-API-DMAC7.html)
JP (1) JP6134522B2 (cg-RX-API-DMAC7.html)
KR (1) KR101610638B1 (cg-RX-API-DMAC7.html)
CN (1) CN103966574B (cg-RX-API-DMAC7.html)
DE (1) DE102014201554A1 (cg-RX-API-DMAC7.html)
TW (1) TWI494469B (cg-RX-API-DMAC7.html)

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KR102215965B1 (ko) * 2014-04-11 2021-02-18 주성엔지니어링(주) 가스 분사 장치 및 이를 포함하는 기판 처리 장치
CN104120408B (zh) * 2014-08-06 2016-09-07 上海世山科技有限公司 一种改进衬底气流方向的hvpe反应器
KR102267923B1 (ko) * 2014-08-26 2021-06-22 에이에스엠 아이피 홀딩 비.브이. 증착 장치
JP6386901B2 (ja) * 2014-12-17 2018-09-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
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JP6054471B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
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CN110158055B (zh) * 2019-05-15 2022-01-14 拓荆科技股份有限公司 多段喷淋组件
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
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CN111020693B (zh) * 2019-12-27 2021-01-29 季华实验室 一种碳化硅外延生长设备的进气装置
KR102746578B1 (ko) 2020-01-15 2024-12-26 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
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CN115152008A (zh) 2020-11-13 2022-10-04 朗姆研究公司 用于干法去除光致抗蚀剂的处理工具
CN114107953A (zh) * 2021-09-18 2022-03-01 江苏微导纳米科技股份有限公司 原子层沉积装置及其喷淋板
CN119013432A (zh) * 2022-03-17 2024-11-22 朗姆研究公司 具有中心至边缘可调节性的双充气室喷头
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CN116240525B (zh) * 2022-12-15 2025-06-24 江苏微导纳米科技股份有限公司 喷淋板及处理装置
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Also Published As

Publication number Publication date
KR20140098000A (ko) 2014-08-07
US20140209015A1 (en) 2014-07-31
JP2014146767A (ja) 2014-08-14
CN103966574B (zh) 2017-04-12
TW201430166A (zh) 2014-08-01
DE102014201554A1 (de) 2014-07-31
KR101610638B1 (ko) 2016-04-08
TWI494469B (zh) 2015-08-01
CN103966574A (zh) 2014-08-06
US9624603B2 (en) 2017-04-18

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