DE102014201554A1 - Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren - Google Patents
Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren Download PDFInfo
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- DE102014201554A1 DE102014201554A1 DE102014201554.5A DE102014201554A DE102014201554A1 DE 102014201554 A1 DE102014201554 A1 DE 102014201554A1 DE 102014201554 A DE102014201554 A DE 102014201554A DE 102014201554 A1 DE102014201554 A1 DE 102014201554A1
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- 238000000927 vapour-phase epitaxy Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims description 146
- 239000007789 gas Substances 0.000 claims abstract description 648
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000012530 fluid Substances 0.000 claims description 31
- 239000001257 hydrogen Substances 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 21
- 229910021529 ammonia Inorganic materials 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 150000002431 hydrogen Chemical class 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 47
- 229910002601 GaN Inorganic materials 0.000 description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- 230000005484 gravity Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 101001094044 Mus musculus Solute carrier family 26 member 6 Proteins 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013016015A JP6134522B2 (ja) | 2013-01-30 | 2013-01-30 | 気相成長装置および気相成長方法 |
| JP2013-016015 | 2013-01-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102014201554A1 true DE102014201554A1 (de) | 2014-07-31 |
Family
ID=51163737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102014201554.5A Pending DE102014201554A1 (de) | 2013-01-30 | 2014-01-29 | Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9624603B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6134522B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101610638B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN103966574B (cg-RX-API-DMAC7.html) |
| DE (1) | DE102014201554A1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI494469B (cg-RX-API-DMAC7.html) |
Cited By (2)
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| CN110050333A (zh) * | 2016-12-08 | 2019-07-23 | 应用材料公司 | 时间性原子层沉积处理腔室 |
| WO2021102726A1 (zh) * | 2019-11-27 | 2021-06-03 | 东莞市中镓半导体科技有限公司 | 一种用于GaN材料生长的线性喷头 |
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| JP6199619B2 (ja) * | 2013-06-13 | 2017-09-20 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
| JP6153401B2 (ja) * | 2013-07-02 | 2017-06-28 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
| KR102306612B1 (ko) | 2014-01-31 | 2021-09-29 | 램 리써치 코포레이션 | 진공-통합된 하드마스크 프로세스 및 장치 |
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| JP6386901B2 (ja) * | 2014-12-17 | 2018-09-05 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
| JP6193284B2 (ja) * | 2015-03-18 | 2017-09-06 | 株式会社東芝 | 流路構造、吸排気部材、及び処理装置 |
| JP5990626B1 (ja) * | 2015-05-26 | 2016-09-14 | 株式会社日本製鋼所 | 原子層成長装置 |
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| CN110158055B (zh) * | 2019-05-15 | 2022-01-14 | 拓荆科技股份有限公司 | 多段喷淋组件 |
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| CN111020693B (zh) * | 2019-12-27 | 2021-01-29 | 季华实验室 | 一种碳化硅外延生长设备的进气装置 |
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| JP2001081569A (ja) | 1999-09-16 | 2001-03-27 | Toshiba Corp | 気相成長装置 |
| JP2013016015A (ja) | 2011-07-04 | 2013-01-24 | Fujitsu Semiconductor Ltd | メモリアクセス制御装置、及びメモリアクセス制御方法 |
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| JP3572211B2 (ja) | 1998-12-28 | 2004-09-29 | 京セラ株式会社 | 半導体製造装置用ガス導入ノズル |
| KR100513920B1 (ko) | 2003-10-31 | 2005-09-08 | 주식회사 시스넥스 | 화학기상증착 반응기 |
| JP5519105B2 (ja) | 2004-08-02 | 2014-06-11 | ビーコ・インストゥルメンツ・インコーポレイテッド | 化学気相成長の方法及び化学気相成長リアクタ用のガス供給システム |
| JP4981485B2 (ja) * | 2007-03-05 | 2012-07-18 | 株式会社ニューフレアテクノロジー | 気相成長方法および気相成長装置 |
| JP5140321B2 (ja) * | 2007-05-31 | 2013-02-06 | 株式会社アルバック | シャワーヘッド |
| KR20090011978A (ko) * | 2007-07-27 | 2009-02-02 | 주식회사 아이피에스 | 샤워헤드 및 그를 가지는 반도체처리장치 |
| JP4865672B2 (ja) * | 2007-10-22 | 2012-02-01 | シャープ株式会社 | 気相成長装置及び半導体素子の製造方法 |
| WO2010024814A1 (en) | 2008-08-28 | 2010-03-04 | Applied Materials, Inc. | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
| JP4576466B2 (ja) * | 2009-03-27 | 2010-11-10 | シャープ株式会社 | 気相成長装置及び気相成長方法 |
| JP2010238831A (ja) | 2009-03-31 | 2010-10-21 | Sharp Corp | 気相成長装置及び気相成長方法 |
| US20120012049A1 (en) * | 2010-07-16 | 2012-01-19 | Wei-Yung Hsu | Hvpe chamber |
| JP5622477B2 (ja) * | 2010-08-06 | 2014-11-12 | 三菱重工業株式会社 | 真空処理装置 |
| JP2011109141A (ja) * | 2011-02-28 | 2011-06-02 | Masayoshi Murata | プラズマｃｖｄ装置及びプラズマｃｖｄ装置を用いたシリコン系膜の製造方法 |
| JP5259804B2 (ja) | 2011-11-08 | 2013-08-07 | シャープ株式会社 | 気相成長装置及び気相成長方法 |
| JP6038618B2 (ja) | 2011-12-15 | 2016-12-07 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
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2013
- 2013-01-30 JP JP2013016015A patent/JP6134522B2/ja active Active
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2014
- 2014-01-17 TW TW103101697A patent/TWI494469B/zh active
- 2014-01-27 US US14/164,498 patent/US9624603B2/en active Active
- 2014-01-28 CN CN201410041218.1A patent/CN103966574B/zh active Active
- 2014-01-28 KR KR1020140010238A patent/KR101610638B1/ko active Active
- 2014-01-29 DE DE102014201554.5A patent/DE102014201554A1/de active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001081569A (ja) | 1999-09-16 | 2001-03-27 | Toshiba Corp | 気相成長装置 |
| JP2013016015A (ja) | 2011-07-04 | 2013-01-24 | Fujitsu Semiconductor Ltd | メモリアクセス制御装置、及びメモリアクセス制御方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110050333A (zh) * | 2016-12-08 | 2019-07-23 | 应用材料公司 | 时间性原子层沉积处理腔室 |
| CN110050333B (zh) * | 2016-12-08 | 2023-06-09 | 应用材料公司 | 时间性原子层沉积处理腔室 |
| WO2021102726A1 (zh) * | 2019-11-27 | 2021-06-03 | 东莞市中镓半导体科技有限公司 | 一种用于GaN材料生长的线性喷头 |
| CN113508189A (zh) * | 2019-11-27 | 2021-10-15 | 东莞市中镓半导体科技有限公司 | 一种用于GaN材料生长的线性喷头 |
| US12060652B2 (en) | 2019-11-27 | 2024-08-13 | Sino Nitride Semiconductor Co., Ltd. | Linear showerhead for growing GaN |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140098000A (ko) | 2014-08-07 |
| US20140209015A1 (en) | 2014-07-31 |
| JP2014146767A (ja) | 2014-08-14 |
| JP6134522B2 (ja) | 2017-05-24 |
| CN103966574B (zh) | 2017-04-12 |
| TW201430166A (zh) | 2014-08-01 |
| KR101610638B1 (ko) | 2016-04-08 |
| TWI494469B (zh) | 2015-08-01 |
| CN103966574A (zh) | 2014-08-06 |
| US9624603B2 (en) | 2017-04-18 |
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