JP6130456B2 - 受発光素子モジュールおよびこれを用いたセンサ装置 - Google Patents
受発光素子モジュールおよびこれを用いたセンサ装置 Download PDFInfo
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- JP6130456B2 JP6130456B2 JP2015174748A JP2015174748A JP6130456B2 JP 6130456 B2 JP6130456 B2 JP 6130456B2 JP 2015174748 A JP2015174748 A JP 2015174748A JP 2015174748 A JP2015174748 A JP 2015174748A JP 6130456 B2 JP6130456 B2 JP 6130456B2
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- 239000000872 buffer Substances 0.000 description 8
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- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
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- 230000000903 blocking effect Effects 0.000 description 7
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/04—Systems determining the presence of a target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
- G01S7/4813—Housing arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/94—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
- H03K2217/941—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated using an optical detector
- H03K2217/94102—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated using an optical detector characterised by the type of activation
- H03K2217/94108—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated using an optical detector characterised by the type of activation making use of reflection
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- Computer Hardware Design (AREA)
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- Computer Networks & Wireless Communication (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geophysics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Device Packages (AREA)
Description
多岐にわたるアプリケーションで用いられている。
図1(a)および(b)に示す受発光素子モジュール1は、コピー機やプリンタなどの画像形成装置に組み込まれて、トナーやメディアなどの被照射物の位置情報、距離情報または濃度情報などを検出するセンサ装置として機能する。
射する光の光源として機能し、発光素子3aから発せられた光が、被照射物で反射されて受光素子3bに入射する。受光素子3bは、光の入射を検出する光検出部として機能する。
bに入射するのを抑制する機能を有する。
L>L0+h×tan{2α−tan−1(h/L0)−90} (h>0)
)、塩化ビニル樹脂(PVC)、ポリエチレンテレフタレート樹脂(PET)、アクリロニトリル/ブタジエン/スチレン樹脂(ABS)などの汎用プラスチック、ポリアミド樹脂(PA)ポリカーボネイト樹脂(PC)などのエンジニアリングプラスチック、液晶ポリマーなどのスーパーエンジニアリングプラスチック、およびアルミニウム(Al)やチタン(Ti)などの金属材料で形成される。
活性層30dの上面には、p型クラッド層30eおよびp型コンタクト層30fなどが積層されているため、活性層30dの中心を直接に観察することができない。そのため、p型コンタクト層30fの中心を活性層30dの中心とみなしても問題ない。なぜなら、上述したように、半導体層の各層は非常に薄いことから、発光素子アレイ3aを形成するためのエッチングとn型コンタクト層30bの上面の一部を露出するためのエッチングとが個別に行なわれたとしても、p型コンタクト層30f側から平面透視して、p型コンタクト層30fの中心と活性層30dの中心とは略一致するからである。
次に、受発光素子モジュール1の製造方法の例を示す。
Vapor Deposition)装置の反応炉内で熱処理することによって、半導体基板30の表面
に形成された自然酸化膜を除去する。この熱処理は、例えば1000℃の温度で10分間程度行なう。
発光素子3aの露出面および半導体基板30(n型半導体領域32を含む)の上面を覆うように絶縁層8を形成する。続いて、絶縁層8上にフォトレジストを塗布し、従来周知のフォトリソグラフィ法によって所望のパターンを露光、現像した後、従来周知のウェットエッチング法によって、後に説明する発光素子側第1電極31aおよび発光素子側第2電極31bならびに受光素子側第1電極33aを、それぞれn型コンタクト層30bおよびp型コンタクト層30fならびにp型半導体領域32に接続するための開口を、絶縁層8に形成する。その後、フォトレジストを除去する。
クリル系粘着剤、ゴム系粘着剤またはシリコーン系粘着剤の接着剤が塗布された両面テープなどを用いて接着する。
次に、受発光素子モジュール1を備えたセンサ装置100について説明する。以下では、受発光素子モジュール1を、コピー機やプリンタなどの画像形成装置における、中間転写ベルトV上に付着したトナーT(被照射物)の位置を検出するセンサ装置に適用する場合を例に挙げて説明する。
2 基板
3 受発光素子アレイ
3a 発光素子
3b 受光素子
4 外壁
4a 内部空間
5 遮光壁
5a 発光素子側遮光面
5b 受光素子側遮光面
5c 下面
5d 傾斜面
6a 発光素子側レンズ
6b 受光素子側レンズ
7 上壁
8 絶縁層
9 接着剤
30 半導体基板
30a バッファ層
30b n型コンタクト層
30c n型クラッド層
30d 活性層
30e p型クラッド層
30f p型コンタクト層
31a 発光素子側第1電極
31b 発光素子側第2電極
32 p型半導体領域
33a 受光素子側第1電極
33b 受光素子側第2電極
100 センサ装置
Claims (7)
- 一導電型の半導体基板と、
前記半導体基板の上面の一部を構成する逆導電型の半導体領域を有した受光素子と、
前記半導体基板の上面に配置された、活性層を含む複数の半導体層を有した発光素子と、
前記発光素子の前記活性層の上方、且つ前記受光素子および前記発光素子の間の領域に位置しており、前記半導体基板の上面に対向し、且つ離れて配された下面を有する遮光壁と、を備えている、受発光素子モジュール。 - 上面に前記半導体基板が配された基板と、
前記基板上に配されて、前記半導体基板を囲んだ外壁と、をさらに備えている、請求項1に記載の受発光素子モジュール。 - 前記外壁の内面は、前記半導体基板の側面から離れている、請求項2に記載の受発光素子モジュール。
- 前記外壁の上端に配され、前記発光素子および前記受光素子に対応して位置した複数の貫通孔を有した上壁をさらに備えており、
前記遮光壁は、前記複数の貫通孔の間に位置し、前記上壁の下面に設けられている、請求項2に記載の受発光素子モジュール。 - 前記上壁の前記複数の貫通孔の間の距離は、前記遮光壁の幅よりも大きく、
前記遮光壁は前記貫通孔の縁から離れて配されており、前記上壁の前記複数の貫通孔の間に位置した下面は露出している、請求項4に記載の受発光素子モジュール。 - 前記発光素子の発光部は、前記外壁よりも前記遮光壁側に位置している、請求項2に記載の受発光素子モジュール。
- 請求項1〜6のいずれかに記載の受発光素子モジュールを用いたセンサ装置であって、前記発光素子から被照射物に光を照射し、該被照射物からの反射光に応じて出力される前記受光素子からの出力電流に応じて前記被照射物の情報を検出するセンサ装置。
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