JP6030656B2 - 受発光素子およびこれを用いたセンサ装置 - Google Patents
受発光素子およびこれを用いたセンサ装置 Download PDFInfo
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- JP6030656B2 JP6030656B2 JP2014533064A JP2014533064A JP6030656B2 JP 6030656 B2 JP6030656 B2 JP 6030656B2 JP 2014533064 A JP2014533064 A JP 2014533064A JP 2014533064 A JP2014533064 A JP 2014533064A JP 6030656 B2 JP6030656 B2 JP 6030656B2
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- light
- receiving element
- light emitting
- emitting element
- substrate
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- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
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- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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Description
図1(a)および(b)に示す受発光素子1は、コピー機やプリンタなどの画像形成装置に組み込まれて、トナーやメディアなどの被照射物の位置情報、距離情報または濃度情報などを検出するセンサ装置として機能する。
次に、受発光素子1の製造方法の例を示す。
次に、受発光素子1を備えたセンサ装置100について説明する。以下では、受発光素子1を、画像形成装置における、中間転写ベルトV上に付着したトナーT(被照射物)の位置を検出するセンサ装置に適用する場合を例に挙げて説明する。
2 基板
3a 発光素子
3b 受光素子
4 外壁
4a 内部空間
5 遮光壁
5a 発光素子側遮光面
5b 受光素子側遮光面
5c 下面
6a 発光素子側レンズ
6b 受光素子側レンズ
7 上壁
8 絶縁層
9 接着剤
30a バッファ層
30b n型コンタクト層
30c n型クラッド層
30d 活性層
30e p型クラッド層
30f p型コンタクト層
31A 発光素子側第1電極パッド
31B 発光素子側第2電極パッド
31a 発光素子側第1電極
31b 発光素子側第2電極
32 p型半導体領域
33A 受光素子側第1電極パッド
33B 受光素子側第2電極パッド
33a 受光素子側第1電極
34 金属塊
40 配線基板
50a 第1線分
50b 第2線分
100 センサ装置
Claims (7)
- 一導電型半導体からなる基板と、該基板の上面に一導電型半導体層と逆導電型半導体層とを含む複数の半導体層が積層されてなる発光素子と、前記基板の上面側に逆導電型の不純物がドーピングされた逆導電型半導体領域を有してなる受光素子と、前記基板、前記一導電型半導体層、前記逆導電型半導体層および前記逆導電型半導体領域のいずれかに接続された電極パッドと、
該電極パッドの上面に接合された金属塊とを備え、
前記電極パッドは、前記発光素子と前記受光素子との間に位置している受発光素子。 - 前記電極パッドは、前記発光素子における前記受光素子に対向する辺と前記受光素子における前記発光素子に対向する辺との一方端同士を結ぶ線分および他方端同士を結ぶ線分と交わって配置されており、
前記電極パッドに複数の前記金属塊が接合されている請求項1に記載の受発光素子。 - 前記電極パッドは前記発光素子と前記受光素子との間に沿って複数配置されており、複数の前記電極パッドは、前記発光素子側から前記受光素子側を見たときに隣り合うもの同士の一部が重なっており、両端に位置する前記電極パッドのそれぞれは、前記発光素子の前記受光素子に対向する辺と前記受光素子の前記発光素子に対向する辺との一方端同士を結ぶ線分または他方端同士を結ぶ線分と交わっており、
複数の前記電極パッドのそれぞれに少なくとも1つの前記金属塊が接合されている請求項1に記載の受発光素子。 - 複数の前記金属塊は、前記発光素子側から前記受光素子側を見たときに隣り合うもの同士の一部が重なっている請求項2または請求項3に記載の受発光素子。
- 前記基板の上面に前記発光素子および前記受光素子を取り囲むように配置された枠状の外壁と、該外壁の内側に位置して内側空間を前記発光素子および前記受光素子のそれぞれに対応した空間に仕切る遮光壁とをさらに備え、
該遮光壁は前記基板に対向する下面を有し、
前記基板と前記遮光壁の下面との間隔は、前記金属塊の前記電極パッドの法線方向の厚みよりも小さい請求項1乃至請求項4のいずれか1項に記載の受発光素子。 - 請求項1乃至5のいずれか1項に記載の受発光素子を用いたセンサ装置であって、
前記発光素子から被照射物に光を照射し、該被照射物からの反射光を前記受光素子で受光 し、受光した光の強度に応じて、前記被照射物に関する情報を検出する、センサ装置。 - 該被照射物からの反射光に応じて出力される前記受光素子からの出力電流に応じて前記被照射物の位置情報、距離情報および濃度情報のうち少なくとも1つを検出する、請求項 6に記載のセンサ装置。
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