JP6495988B2 - 受発光素子およびこれを用いたセンサ装置 - Google Patents
受発光素子およびこれを用いたセンサ装置 Download PDFInfo
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- JP6495988B2 JP6495988B2 JP2017185781A JP2017185781A JP6495988B2 JP 6495988 B2 JP6495988 B2 JP 6495988B2 JP 2017185781 A JP2017185781 A JP 2017185781A JP 2017185781 A JP2017185781 A JP 2017185781A JP 6495988 B2 JP6495988 B2 JP 6495988B2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
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- 239000010936 titanium Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910002711 AuNi Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Measurement Of Optical Distance (AREA)
Description
デバイス、光ファイバ通信用装置、さらには原稿サイズセンサなど多岐にわたるアプリケーションで用いられている。
また、本発明の受発光素子は、上記構成において、前記第2受光素子は、複数あり、前記複数の第2受光素子は、前記発光素子列に沿って前記複数の発光素子のそれぞれに対応して前記第1方向に直線状に配置されている。
また、本発明の受発光素子は、上記構成において、前記第2受光素子は、前記発光素子列に沿って配置された、前記発光素子列と略同じ長さの、1つの受光素子である。
図1および図2に示す受発光素子1は、コピー機やプリンタなどの画像形成装置に組み込まれて、トナーやメディアなどの被照射物の距離情報を検出するセンサ装置として機能する。
、構成要素の一部または全部が基板2の内部に作り込まれていてもよい。後者の場合には、少なくとも発光素子3aの発光面および第1受光素子3bの受光面が第1面2a側に露出した状態にする。
gが1×1019〜5×1020atoms/cm3のドーピング濃度でドーピングされている。
ができる。
次に、受発光素子1の製造方法の例を示す。
炉内で熱処理することによって、基板2の表面に形成された自然酸化膜を除去する。この熱処理は、例えば1000℃の温度で10分間程度行なう。
次に、受発光素子1を備えたセンサ装置100について説明する。以下では、受発光素子1を、コピー機やプリンタなどの画像形成装置における、記録媒体T(被照射物)の距離を検出するセンサ装置に適用する場合を例に挙げて説明する。
設けられた複数の発光素子3aのそれぞれが発する光を集光するための複数のレンズ40を備えていてもよい。複数のレンズ40のそれぞれは、基板2の厚み方向(複数の半導体層の積層方向)に沿って発光素子3aの上方に配置されている。このような構成とすることで、発光素子3aが発する光が集光され、第1受光素子3bに入射する光の量が多くなることから、第1受光素子3bの検出感度が高くなる。
されている。
第1受光素子3bの平面形状:1.5mm角
複数の発光素子3aの中心間隔:0.5mm
発光素子3a1と第1受光素子3bとの中心間隔L:2mm
発光素子3aの出射光の被照射物Tへの入射角θ:45°
被照射物Tにおける反射モード:散乱反射が支配的と仮定する
基準距離d1〜d8:2mm〜5.5mmまで0.5mm間隔で設定
被照射物Tと発光素子3aとのZ方向における距離D:2mm〜6.5mmまで0.5mm間隔で設定
発光素子3aのスキャン間隔:1msec(1kHzに相当)
2 基板
2a 第1面
3a 発光素子
3b 第1受光素子
3c 第2受光素子
30a バッファ層
30b n型コンタクト層
30c n型クラッド層
30d 活性層
30e p型クラッド層
30f p型コンタクト層
31A 発光素子側第1電極パッド
31B 発光素子側第2電極パッド
31a 発光素子側第1電極
31b 発光素子側第2電極
32,32’ 逆導電型半導体領域(p型半導体領域)
33A 第1受光素子側第1電極パッド
33B 第1受光素子側第2電極パッド
33a 第1受光素子側第1電極
34A 第2受光素子側第1電極パッド
34B 第2受光素子側第2電極パッド
34a 第2受光素子側第1電極
40 レンズ
100 センサ装置
P1,P2 プリズム
R 発光素子列
Claims (5)
- 第1方向に一列に並んだ複数の発光素子を有した発光素子列と、
前記発光素子列の一方端側に配置された第1受光素子と、
前記発光素子列に沿って前記第1方向に直線状に、前記発光素子列に対応して設けられた第2受光素子と、を備えた、受発光素子。 - 前記第2受光素子は、複数あり、
前記複数の第2受光素子は、前記発光素子列に沿って前記複数の発光素子のそれぞれに対応して前記第1方向に直線状に配置されている、請求項1に記載の受発光素子。 - 前記第2受光素子は、前記発光素子列に沿って配置された、前記発光素子列と略同じ長さの、1つの受光素子である、請求項1に記載の受発光素子。
- 請求項1〜3のいずれかに記載の受発光素子を用いたセンサ装置であって、
前記複数の発光素子のそれぞれから被照射物に光を順次照射し、前記被照射物に対して光を照射した前記発光素子の位置情報と、前記被照射物からの反射光に応じて出力される前記第1受光素子からの出力電流とに応じて前記被照射物の距離情報を検出するセンサ装置。 - 請求項1〜3のいずれかに記載の受発光素子を用いたセンサ装置であって、
前記複数の発光素子のそれぞれから被照射物に光を順次照射し、前記被照射物に対して光を照射した前記発光素子の位置情報と、前記被照射物からの反射光に応じて出力される前記第1受光素子および前記第2受光素子からの出力電流とに応じて前記被照射物の位置情報および距離情報を検出するセンサ装置。
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JP6506164B2 (ja) * | 2013-07-29 | 2019-04-24 | 京セラ株式会社 | 受発光素子およびこれを用いたセンサ装置 |
FR3041153B1 (fr) * | 2015-09-10 | 2018-07-27 | Aledia | Dispositif electroluminescent a capteur de lumiere integre |
FR3041152B1 (fr) * | 2015-09-10 | 2018-07-27 | Aledia | Dispositif electroluminescent a capteur de lumiere integre |
JP6372522B2 (ja) * | 2016-06-24 | 2018-08-15 | カシオ計算機株式会社 | 光センサ、及び駆動動作検出装置 |
CN108711566B (zh) * | 2018-05-25 | 2024-05-24 | 南京矽力微电子技术有限公司 | 光学感测系统、光学感测组件及其制造方法 |
JP7362198B2 (ja) | 2018-07-18 | 2023-10-17 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、測距モジュール、および、電子機器 |
CN112736179B (zh) * | 2019-08-06 | 2023-04-07 | 天津三安光电有限公司 | 一种发光二极管及制作工艺、发光装置 |
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JPS60125508A (ja) * | 1983-12-12 | 1985-07-04 | Kita Denshi:Kk | 印刷エラー検出装置 |
JPS62188907A (ja) * | 1986-02-14 | 1987-08-18 | Mitsubishi Rayon Co Ltd | 距離計 |
JPS63309833A (ja) * | 1987-06-11 | 1988-12-16 | Nippon Telegr & Teleph Corp <Ntt> | 光ファイバの零分散波長測定方法 |
JPS63309883A (ja) * | 1987-06-12 | 1988-12-16 | Stanley Electric Co Ltd | 車両用障害物検出装置 |
GB9424753D0 (en) * | 1994-12-08 | 1995-02-08 | Uk Robotics Ltd | Object sensing system |
JP3766145B2 (ja) * | 1996-10-16 | 2006-04-12 | 株式会社日本自動車部品総合研究所 | 車室内状況検出装置 |
US7030551B2 (en) * | 2000-08-10 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Area sensor and display apparatus provided with an area sensor |
JP2002350130A (ja) * | 2001-05-30 | 2002-12-04 | Sharp Corp | 位置検出センサ |
US20090232419A1 (en) * | 2008-03-13 | 2009-09-17 | Renaissance Learning, Inc. | System for detecting markings |
JP5415004B2 (ja) * | 2008-03-19 | 2014-02-12 | ナブテスコ株式会社 | 自動ドア用センサ |
JP5532589B2 (ja) * | 2008-11-19 | 2014-06-25 | 株式会社リコー | 位置検出方法及び画像形成装置 |
JP5692971B2 (ja) * | 2009-05-28 | 2015-04-01 | 京セラ株式会社 | 受発光素子及びその製造方法、並びに受発光素子を備えた光センサ装置 |
JP5882720B2 (ja) * | 2011-12-21 | 2016-03-09 | 京セラ株式会社 | 受発光素子モジュールおよびこれを用いたセンサ装置 |
JP6506164B2 (ja) * | 2013-07-29 | 2019-04-24 | 京セラ株式会社 | 受発光素子およびこれを用いたセンサ装置 |
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