JP2018046314A - 受発光素子およびこれを用いたセンサ装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims abstract description 146
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 239000012535 impurity Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims description 11
- 238000001514 detection method Methods 0.000 abstract description 8
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- 238000000034 method Methods 0.000 description 21
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- 229910052787 antimony Inorganic materials 0.000 description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 7
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- 230000004888 barrier function Effects 0.000 description 3
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- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
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- 229910052799 carbon Inorganic materials 0.000 description 3
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- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
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- 229910002711 AuNi Inorganic materials 0.000 description 1
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
【解決手段】 本発明の受発光素子1は、一導電型の半導体基板2と、半導体基板2の上面に積層した複数の半導体層を有する発光素子3aと、半導体基板2の上面側に逆導電型の不純物がドーピングされた逆導電型半導体領域32を有する受光素子3bと、半導体基板2の上面に配置され、且つ受光素子3bの電極となる第1電極パッド33Aとを備え、一導電型の半導体基板2における不純物濃度は、第1電極パッド33Aの直下の領域が他の領域よりも高くなっている。
【選択図】 図1
Description
デバイス、光ファイバ通信用装置、さらには原稿サイズセンサなど多岐にわたるアプリケーションで用いられている。
−46236号公報参照。)
た複数の半導体層を有する発光素子と、前記半導体基板の上面側に逆導電型の不純物がドーピングされた逆導電型半導体領域を有する受光素子と、前記半導体基板の上面に配置され、且つ前記受光素子の電極となる第1電極パッドとを備え、前記一導電型の半導体基板における不純物濃度は、前記第1電極パッドの直下の領域が他の領域よりも高くなっていることから、光検出精度が高い受発光素子およびセンサ装置を提供することができる。
本実施形態に係る受発光素子1は、コピー機やプリンタなどの画像形成装置に組み込まれて、トナーやメディアなどの被照射物の位置情報、距離情報または濃度情報などを検出するセンサ装置として機能する。
aの近傍に配置されている。発光素子3aは被照射物に照射する光の光源として機能する。発光素子3aから発せられた光は、被照射物で反射されて受光素子3bに入射する。受光素子3bは、光の入射を検出する光検出部として機能する。
リウム砒素(GaAs)で形成される。また、キャップ層の厚さは、例えば、0.01〜0.03μm程度に設定される。
第1電極パッド33Aからの電子の取り出し効率が向上することになり、受光素子3bの検出精度を向上させることができる。
果によって光電流が発生して、この光電流を第4電極パッド33Bを介して取り出すことによって、光検出部として機能する。なお、第4電極パッド33Bと第1電極パッド33Aとの間に逆バイアスを印加すれば、受光素子3bの光検出感度が高くなるので好ましい。
次に、受発光素子1の製造方法の例を示す。
成された自然酸化膜を除去する。この熱処理は、例えば1000℃の温度で10分間程度行なう。
ターンを露光、現像した後、抵抗加熱法やスパッタリング法などを用いて、第2電極31a、第2電極パッド31A、第4電極33b、第4電極パッド33B、第1電極33aおよび第1電極パッド33Aを形成するための合金膜を形成する。そして、リフトオフ法を用いて、フォトレジストを除去するとともに、第2電極31a、第2電極パッド31A、第4電極33b、第4電極パッド33B、第1電極33a、第1電極パッド33Aおよびガードリング電極34を所望の形状に形成する。同様に第3電極31bおよび発光素子側第2電極パッド33Bもそれぞれ同様の工程によって形成する。
次に、受発光素子1を備えたセンサ装置100について説明する。以下では、受発光素子1を、コピー機やプリンタなどの画像形成装置における、中間転写ベルトV上に付着したトナーT(被照射物)の位置を検出するセンサ装置に適用する場合を例に挙げて説明する。
Claims (8)
- 一導電型の半導体基板と、該半導体基板の上面に積層した複数の半導体層を有する発光素子と、前記半導体基板の上面側に逆導電型の不純物がドーピングされた逆導電型半導体領域を有する受光素子と、前記半導体基板の上面に配置され、且つ前記受光素子の電極となる第1電極パッドとを備え、前記一導電型の半導体基板における不純物濃度は、前記第1電極パッドの直下の領域が他の領域よりも高くなっていることを特徴とする受発光素子。
- 前記第1電極パッドの直下の領域における不純物は、前記半導体基板の上面に接する前記半導体層を構成する元素の少なくとも1つと同じであることを特徴とする請求項1に記載の受発光素子。
- 前記複数の半導体層は、一導電型のコンタクト層を含み、
該コンタクト層の上面に配置され、且つ前記発光素子の電極となる第2電極をさらに備えており、
該第2電極および前記第1電極パッドは同じ材料からなることを特徴とする請求項1または2に記載の受発光素子。 - 前記半導体基板における前記第1電極パッドの直下の領域は、前記第1電極パッド側に突出している突出部を有していることを特徴とする請求項1〜3のいずれか1項に記載の受発光素子。
- 前記第1電極パッドは、前記突出部を覆っていることを特徴とする請求項4に記載の受発光素子。
- 前記第1電極パッドは、前記発光素子と前記受光素子との間の領域に位置していることを特徴とする請求項1〜5のいずれか1項に記載の受発光素子。
- 前記半導体基板は、前記第1電極パッドと前記発光素子との間に溝をさらに有していることを特徴とする請求項1〜6のいずれか1項に記載の受発光素子。
- 請求項1〜7のいずれか1項に記載の受発光素子を用いたセンサ装置であって、
前記発光素子から被照射物に光を照射し、該被照射物からの反射光に応じて出力される前記受光素子からの出力電流に応じて前記被照射物の位置情報、距離情報および濃度情報のうち少なくとも1つを検出することを特徴とするセンサ装置。
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CN109069043B (zh) * | 2016-04-04 | 2021-06-18 | 京瓷株式会社 | 测量传感器用封装件以及测量传感器 |
CN106653934A (zh) * | 2016-10-20 | 2017-05-10 | 天津大学 | 一种基于标准cmos工艺的混合光互连系统 |
US11437539B2 (en) * | 2020-09-30 | 2022-09-06 | Lite-On Singapore Pte. Ltd. | Optical sensor package and manufacturing method for the same |
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US6148016A (en) * | 1997-11-06 | 2000-11-14 | The Regents Of The University Of California | Integrated semiconductor lasers and photodetectors |
JP2005109494A (ja) * | 2003-09-30 | 2005-04-21 | Osram Opto Semiconductors Gmbh | ビーム発光及び受光型半導体構成素子及びその製造方法 |
JP2010034352A (ja) * | 2008-07-30 | 2010-02-12 | Kyocera Corp | 受発光素子アレイ及びこれを備えたセンサ装置 |
WO2013065668A1 (ja) * | 2011-10-31 | 2013-05-10 | 京セラ株式会社 | 受発光一体型素子を用いた受発光装置およびセンサ装置 |
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JPH05275731A (ja) * | 1992-03-25 | 1993-10-22 | Sharp Corp | フォトダイオード |
JPH0745912A (ja) * | 1993-07-30 | 1995-02-14 | Sony Corp | 半導体レーザ装置 |
JP3012151B2 (ja) | 1994-07-28 | 2000-02-21 | 沖電気工業株式会社 | 受発光素子及びその製造方法 |
EP1324396A4 (en) * | 2000-09-29 | 2008-10-22 | Sanyo Electric Co | OPTICAL RECEPTION SYSTEM AND SEMICONDUCTOR OPTICAL DEVICE EQUIPPED WITH THE SAME |
JP2004128464A (ja) * | 2002-08-01 | 2004-04-22 | Hamamatsu Photonics Kk | 半導体位置検出素子 |
JP2006060103A (ja) * | 2004-08-23 | 2006-03-02 | Sharp Corp | 半導体受光装置および紫外線センサー機器 |
JP5692971B2 (ja) * | 2009-05-28 | 2015-04-01 | 京セラ株式会社 | 受発光素子及びその製造方法、並びに受発光素子を備えた光センサ装置 |
US8263899B2 (en) * | 2010-07-01 | 2012-09-11 | Sunpower Corporation | High throughput solar cell ablation system |
WO2012098981A1 (ja) * | 2011-01-20 | 2012-07-26 | ローム株式会社 | 光学装置 |
US8927999B2 (en) * | 2011-11-21 | 2015-01-06 | Avogy, Inc. | Edge termination by ion implantation in GaN |
US9148036B2 (en) * | 2012-07-27 | 2015-09-29 | Nidec Corporation | Base member of a motor which includes specific surface structure |
US9190433B2 (en) * | 2013-03-18 | 2015-11-17 | Lite-On Singapore Pte. Ltd. | Ambient light sensing with stacked photodiode structure with dual PN junction |
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- 2014-10-30 EP EP14859111.8A patent/EP3065185A4/en not_active Withdrawn
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- 2014-10-30 CN CN201480058890.XA patent/CN105745765A/zh active Pending
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JPS4945422U (ja) * | 1972-07-25 | 1974-04-20 | ||
US6148016A (en) * | 1997-11-06 | 2000-11-14 | The Regents Of The University Of California | Integrated semiconductor lasers and photodetectors |
JP2005109494A (ja) * | 2003-09-30 | 2005-04-21 | Osram Opto Semiconductors Gmbh | ビーム発光及び受光型半導体構成素子及びその製造方法 |
JP2010034352A (ja) * | 2008-07-30 | 2010-02-12 | Kyocera Corp | 受発光素子アレイ及びこれを備えたセンサ装置 |
WO2013065668A1 (ja) * | 2011-10-31 | 2013-05-10 | 京セラ株式会社 | 受発光一体型素子を用いた受発光装置およびセンサ装置 |
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US20160284921A1 (en) | 2016-09-29 |
JPWO2015064697A1 (ja) | 2017-03-09 |
CN105745765A (zh) | 2016-07-06 |
EP3065185A1 (en) | 2016-09-07 |
EP3065185A4 (en) | 2017-08-02 |
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