JP6294500B2 - 受発光素子モジュールおよびこれを用いたセンサ装置 - Google Patents
受発光素子モジュールおよびこれを用いたセンサ装置 Download PDFInfo
- Publication number
- JP6294500B2 JP6294500B2 JP2016550148A JP2016550148A JP6294500B2 JP 6294500 B2 JP6294500 B2 JP 6294500B2 JP 2016550148 A JP2016550148 A JP 2016550148A JP 2016550148 A JP2016550148 A JP 2016550148A JP 6294500 B2 JP6294500 B2 JP 6294500B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting element
- receiving element
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 77
- 239000004065 semiconductor Substances 0.000 claims description 63
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 82
- 239000012535 impurity Substances 0.000 description 24
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 238000005253 cladding Methods 0.000 description 12
- 239000010936 titanium Substances 0.000 description 10
- 229920005668 polycarbonate resin Polymers 0.000 description 9
- 239000004431 polycarbonate resin Substances 0.000 description 9
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 6
- 239000004743 Polypropylene Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 239000000872 buffer Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 229920006351 engineering plastic Polymers 0.000 description 6
- 229920006122 polyamide resin Polymers 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- -1 polypropylene Polymers 0.000 description 6
- 229920005990 polystyrene resin Polymers 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002711 AuNi Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/04—Systems determining the presence of a target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/46—Indirect determination of position data
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
- G01S7/4813—Housing arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
- G01S7/4815—Constructional features, e.g. arrangements of optical elements of transmitters alone using multiple transmitters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
- H03K17/943—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector using a plurality of optical emitters or detectors, e.g. keyboard
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geophysics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
図1(a)および(b)に示す受発光素子モジュール1は、例えばコピー機やプリンタなどの画像形成装置に組み込まれて、トナーやメディアなどの被照射物の位置情報、距離情報、表面状態または濃度情報などを検出するセンサ装置の一部として機能する。なお、本例の受発光素子モジュール1の検出対象物は、トナーやメディアなどに限られず、金属表面、錠剤表面、あるいは生物の皮膚などでもよい。
次に、受発光素子モジュール1を備えたセンサ装置100について説明する。以下では、受発光素子モジュール1を、コピー機やプリンタなどの画像形成装置における、中間転写ベルトV上に付着したトナーT(被照射物)の位置を検出するセンサ装置に適用する場合を例に挙げて説明する。
上述の例では、筐体20の上壁7から下方に伸びる中間壁5を用いた例について説明したが、この例に限定されない。例えば、図5に示す受発光素子モジュール1Aのように、中間壁5Aの機能を上壁7Aの一部に持たせてもよい。
L>L0+h×tan{2γ−tan−1(h/L0)−90} (h>0)
を満たすように、第1傾斜面5c1の角度を調整すればよい。
上述の例では、半導体基板20が基板2に実装された場合を例に説明したが、これに限定されない。例えば、基板2上に放熱部材等の台座部を介して半導体基板20を実装してもよい。また、筐体20は基板2上に接続されていなくてもよく、例えば半導体基板20上に接続されてもよい。
Claims (10)
- 上面を有する基板と、
前記基板の前記上面に配置された発光素子と、
前記基板の前記上面に前記発光素子と間隔を開けて配置された受光素子と、
前記発光素子と前記受光素子との間において、前記上面と間隔を開けているとともに前記発光素子の発光部および前記受光素子の受光部よりも上方に配置された下面を有する中間壁と、を備え、
前記中間壁の前記下面は、前記受光素子に対向した第2傾斜面を有しており、
前記第2傾斜面は、前記発光素子の発光点と前記第2傾斜面の下端とを結ぶ仮想線よりも上方に位置するように傾斜している、受発光素子モジュール。 - 前記下面は、前記発光素子側に位置した第1傾斜面を有している、請求項1に記載の受発光素子モジュール。
- 前記中間壁は、上下方向に伸びており、前記下面に接続し、前記発光素子側に位置した第1側面をさらに有しており、
前記第1傾斜面の算術平均粗さは、前記第1側面の算術平均粗さよりも大きい、請求項2に記載の受発光素子モジュール。 - 前記第1傾斜面の傾斜角度は、前記発光素子からの光が、前記第1傾斜面のうち前記第1傾斜面および前記第2傾斜面の交点において正反射したときに、その反射光が前記受光素子よりも前記発光素子側に到達するように設定されている、請求項3に記載の受発光素子モジュール。
- 前記発光素子および前記受光素子の収容空間を形成する筐体を備え、
前記筐体は、前記発光素子からの光を外部に出射する第1開口部と、外部からの反射光を前記受光素子に導く第2開口部とを有し、
前記中間壁は、前記筐体の前記第1開口部と前記第2開口部との間に位置している、請求項1〜4のいずれかに記載の受発光素子モジュール。 - 前記第2開口部は、前記第2開口部の壁面と前記仮想線とが交差するように配されている、請求項2を引用する請求項5に記載の受発光素子モジュール。
- 前記第2開口部の前記壁面は、前記発光素子からの光を上方に反射するように上下方向
に伸びている、請求項6に記載の受発光素子モジュール。 - 前記第2開口部を形成する壁面のうち前記第2仮想直線との交差部は、前記第1主面に直交する垂線と略平行となっている、請求項7に記載の受発光素子モジュール。
- 一導電型の半導体基板をさらに備え、
前記発光素子は、前記半導体基板の上面に配された複数の半導体層を有しており、
前記受光素子は、前記半導体基板の上面の表層部に配された逆導電型の半導体領域を有している請求項1〜8のいずれかに記載の受発光素子モジュール。 - 請求項1〜9のいずれか1項に記載の受発光素子モジュールを用いたセンサ装置であって、
前記発光素子から被照射物に光を照射し、該被照射物からの反射光に応じて出力される前記受光素子からの出力電流に応じて前記被照射物の情報を検出する、センサ装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014193478 | 2014-09-24 | ||
JP2014193478 | 2014-09-24 | ||
PCT/JP2015/076446 WO2016047545A1 (ja) | 2014-09-24 | 2015-09-17 | 受発光素子モジュールおよびこれを用いたセンサ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016047545A1 JPWO2016047545A1 (ja) | 2017-06-22 |
JP6294500B2 true JP6294500B2 (ja) | 2018-03-14 |
Family
ID=55581072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016550148A Active JP6294500B2 (ja) | 2014-09-24 | 2015-09-17 | 受発光素子モジュールおよびこれを用いたセンサ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10128222B2 (ja) |
EP (1) | EP3200245B1 (ja) |
JP (1) | JP6294500B2 (ja) |
CN (1) | CN106663716B (ja) |
WO (1) | WO2016047545A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016175246A1 (ja) * | 2015-04-27 | 2016-11-03 | 京セラ株式会社 | 受発光素子モジュールおよびセンサ装置 |
ES2809563T3 (es) * | 2016-07-11 | 2021-03-04 | Screen Experts Gmbh | Módulo con una pluralidad de LED y tarjeta de video |
WO2018199132A1 (ja) * | 2017-04-27 | 2018-11-01 | 京セラ株式会社 | 受発光素子モジュールおよびセンサー装置 |
JP6889410B2 (ja) * | 2018-03-14 | 2021-06-18 | オムロン株式会社 | 光電センサ |
FR3081257B1 (fr) | 2018-05-18 | 2020-07-31 | St Microelectronics Grenoble 2 | Circuit d'emission/reception optique |
FR3081256B1 (fr) | 2018-05-18 | 2020-07-31 | St Microelectronics Grenoble 2 | Circuit d'emission/reception optique |
US20220054027A1 (en) * | 2018-12-25 | 2022-02-24 | Kyocera Corporation | Optical sensor device |
US11585526B2 (en) * | 2019-12-17 | 2023-02-21 | Exton Capital Corp | Lighting apparatus |
US20220085219A1 (en) * | 2020-09-14 | 2022-03-17 | Utica Leaseco, Llc | Photovoltaic devices including flexible bypass diode circuit |
US11437539B2 (en) * | 2020-09-30 | 2022-09-06 | Lite-On Singapore Pte. Ltd. | Optical sensor package and manufacturing method for the same |
CN113341424B (zh) * | 2021-08-05 | 2021-11-05 | 锐驰智光(北京)科技有限公司 | 防止漏光的激光雷达 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05152603A (ja) | 1991-11-28 | 1993-06-18 | Sharp Corp | 反射型光結合装置 |
JPH11223781A (ja) | 1998-02-09 | 1999-08-17 | Canon Inc | 光走査装置 |
JP3450225B2 (ja) * | 1999-06-10 | 2003-09-22 | エヌイーシーアクセステクニカ株式会社 | 携帯情報端末 |
JP4117868B2 (ja) * | 1999-11-22 | 2008-07-16 | シャープ株式会社 | 光結合素子 |
JP2002222987A (ja) * | 2001-01-24 | 2002-08-09 | Htt:Kk | 光信号通信モジュール |
JP2007201360A (ja) | 2006-01-30 | 2007-08-09 | Citizen Electronics Co Ltd | フォトリフレクタ装置 |
JP5624442B2 (ja) | 2010-11-30 | 2014-11-12 | ローム株式会社 | 光学電子部品、携帯用電子機器、および光学電子部品の製造方法 |
WO2012139662A1 (de) * | 2011-04-15 | 2012-10-18 | Osram Opto Semiconductors Gmbh | Optoelektronische vorrichtung |
US9627572B2 (en) * | 2012-04-25 | 2017-04-18 | Kyocera Corporation | Light receiving and emitting element module and sensor device using same |
JP6215728B2 (ja) * | 2014-02-26 | 2017-10-18 | 京セラ株式会社 | 受発光素子モジュール |
-
2015
- 2015-09-17 JP JP2016550148A patent/JP6294500B2/ja active Active
- 2015-09-17 EP EP15845339.9A patent/EP3200245B1/en active Active
- 2015-09-17 US US15/512,039 patent/US10128222B2/en active Active
- 2015-09-17 CN CN201580042710.3A patent/CN106663716B/zh active Active
- 2015-09-17 WO PCT/JP2015/076446 patent/WO2016047545A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP3200245A1 (en) | 2017-08-02 |
EP3200245A4 (en) | 2018-09-26 |
JPWO2016047545A1 (ja) | 2017-06-22 |
US20170294426A1 (en) | 2017-10-12 |
WO2016047545A1 (ja) | 2016-03-31 |
CN106663716A (zh) | 2017-05-10 |
US10128222B2 (en) | 2018-11-13 |
CN106663716B (zh) | 2018-10-19 |
EP3200245B1 (en) | 2023-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6294500B2 (ja) | 受発光素子モジュールおよびこれを用いたセンサ装置 | |
JP6420423B2 (ja) | 受発光素子モジュールおよびこれを用いたセンサ装置 | |
JP6130456B2 (ja) | 受発光素子モジュールおよびこれを用いたセンサ装置 | |
JP6215728B2 (ja) | 受発光素子モジュール | |
JP6030656B2 (ja) | 受発光素子およびこれを用いたセンサ装置 | |
JP6675020B2 (ja) | 受発光素子モジュールおよびセンサ装置 | |
JP5970370B2 (ja) | 受発光素子およびこれを用いたセンサ装置 | |
WO2018199132A1 (ja) | 受発光素子モジュールおよびセンサー装置 | |
JP6483531B2 (ja) | 受発光素子モジュールおよびセンサ装置 | |
JP6563722B2 (ja) | 受発光素子モジュールおよびセンサ装置 | |
JP6616369B2 (ja) | 受発光素子モジュール | |
JP6974208B2 (ja) | 受発光素子モジュールおよびセンサー装置 | |
JP2022129220A (ja) | 受発光素子、受発光素子モジュールおよびセンサ装置 | |
JP2017135276A (ja) | 受発光素子、受発光素子モジュールおよびセンサ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170303 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170711 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170911 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180109 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180116 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180215 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6294500 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |