JP6123408B2 - 単結晶４Ｈ−ＳｉＣ基板及びその製造方法 - Google Patents

単結晶４Ｈ−ＳｉＣ基板及びその製造方法 Download PDF

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Publication number
JP6123408B2
JP6123408B2 JP2013064365A JP2013064365A JP6123408B2 JP 6123408 B2 JP6123408 B2 JP 6123408B2 JP 2013064365 A JP2013064365 A JP 2013064365A JP 2013064365 A JP2013064365 A JP 2013064365A JP 6123408 B2 JP6123408 B2 JP 6123408B2
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single crystal
sic
sic layer
recess
less
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English (en)
Japanese (ja)
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JP2014189422A (ja
JP2014189422A5 (enExample
Inventor
彰仁 大野
彰仁 大野
善平 川津
善平 川津
信之 冨田
信之 冨田
貴規 田中
貴規 田中
陽一郎 三谷
陽一郎 三谷
健一 浜野
健一 浜野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2013064365A priority Critical patent/JP6123408B2/ja
Priority to US14/149,942 priority patent/US9422640B2/en
Priority to KR1020140030851A priority patent/KR101607907B1/ko
Priority to DE102014205466.4A priority patent/DE102014205466B4/de
Priority to CN201410112911.3A priority patent/CN104078331B/zh
Publication of JP2014189422A publication Critical patent/JP2014189422A/ja
Publication of JP2014189422A5 publication Critical patent/JP2014189422A5/ja
Priority to US15/182,661 priority patent/US9752254B2/en
Priority to US15/182,693 priority patent/US9903048B2/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2013064365A 2013-03-26 2013-03-26 単結晶４Ｈ−ＳｉＣ基板及びその製造方法 Active JP6123408B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2013064365A JP6123408B2 (ja) 2013-03-26 2013-03-26 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
US14/149,942 US9422640B2 (en) 2013-03-26 2014-01-08 Single-crystal 4H-SiC substrate
KR1020140030851A KR101607907B1 (ko) 2013-03-26 2014-03-17 단결정 4H-SiC 기판 및 그 제조방법
DE102014205466.4A DE102014205466B4 (de) 2013-03-26 2014-03-24 Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung
CN201410112911.3A CN104078331B (zh) 2013-03-26 2014-03-25 单晶4H‑SiC衬底及其制造方法
US15/182,661 US9752254B2 (en) 2013-03-26 2016-06-15 Method for manufacturing a single-crystal 4H—SiC substrate
US15/182,693 US9903048B2 (en) 2013-03-26 2016-06-15 Single-crystal 4H-SiC substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013064365A JP6123408B2 (ja) 2013-03-26 2013-03-26 単結晶４Ｈ−ＳｉＣ基板及びその製造方法

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JP2017064949A Division JP2017122047A (ja) 2017-03-29 2017-03-29 単結晶４Ｈ−ＳｉＣ基板及びその製造方法

Publications (3)

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JP2014189422A JP2014189422A (ja) 2014-10-06
JP2014189422A5 JP2014189422A5 (enExample) 2016-04-07
JP6123408B2 true JP6123408B2 (ja) 2017-05-10

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US (3) US9422640B2 (enExample)
JP (1) JP6123408B2 (enExample)
KR (1) KR101607907B1 (enExample)
CN (1) CN104078331B (enExample)
DE (1) DE102014205466B4 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110747507B (zh) 2014-08-01 2021-03-19 住友电气工业株式会社 外延晶片
CN106796886B (zh) * 2014-08-29 2020-05-01 住友电气工业株式会社 碳化硅半导体器件和用于制造碳化硅半导体器件的方法
WO2016051975A1 (ja) * 2014-10-01 2016-04-07 住友電気工業株式会社 炭化珪素エピタキシャル基板
JP2016127177A (ja) * 2015-01-06 2016-07-11 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法
US9368415B1 (en) 2015-02-25 2016-06-14 International Business Machines Corporation Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layers
JP6690282B2 (ja) * 2016-02-15 2020-04-28 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6672962B2 (ja) * 2016-03-31 2020-03-25 住友電気工業株式会社 炭化珪素半導体基板および半導体装置の製造方法
JP2017122047A (ja) * 2017-03-29 2017-07-13 三菱電機株式会社 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
KR101998138B1 (ko) 2017-04-20 2019-07-09 한국세라믹기술원 자외선 포토루미네선스를 이용한 결정의 폴리타입 분석방법
JP6564151B1 (ja) * 2019-02-28 2019-08-21 株式会社アドマップ ＳｉＣ膜単体構造体
CN114242644B (zh) * 2021-11-17 2024-10-25 中国电子科技集团公司第五十五研究所 一种碳化硅沟槽结构外延填充方法

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CN1324168C (zh) * 2002-03-19 2007-07-04 财团法人电力中央研究所 SiC结晶的制造方法以及SiC结晶
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
JP4786223B2 (ja) * 2005-05-24 2011-10-05 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP4933137B2 (ja) * 2006-04-28 2012-05-16 学校法人 名城大学 半導体および半導体製造方法
JP4959763B2 (ja) 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
CN101877309B (zh) * 2009-10-30 2011-09-21 西安电子科技大学 提高4H-SiC基面位错转化率的外延方法
JP4887418B2 (ja) 2009-12-14 2012-02-29 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
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JP5693946B2 (ja) 2010-03-29 2015-04-01 エア・ウォーター株式会社 単結晶３Ｃ−ＳｉＣ基板の製造方法
JP5598542B2 (ja) 2010-05-10 2014-10-01 三菱電機株式会社 炭化珪素エピタキシャルウエハ及びその製造方法並びにエピタキシャル成長用炭化珪素バルク基板及びその製造方法
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Also Published As

Publication number Publication date
CN104078331B (zh) 2017-03-01
DE102014205466A1 (de) 2014-10-02
US20160298264A1 (en) 2016-10-13
KR20140117277A (ko) 2014-10-07
US20160298262A1 (en) 2016-10-13
DE102014205466B4 (de) 2017-02-23
JP2014189422A (ja) 2014-10-06
KR101607907B1 (ko) 2016-03-31
CN104078331A (zh) 2014-10-01
US9752254B2 (en) 2017-09-05
US9903048B2 (en) 2018-02-27
US9422640B2 (en) 2016-08-23
US20140295136A1 (en) 2014-10-02

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