DE102014205466B4 - Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung - Google Patents

Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung Download PDF

Info

Publication number
DE102014205466B4
DE102014205466B4 DE102014205466.4A DE102014205466A DE102014205466B4 DE 102014205466 B4 DE102014205466 B4 DE 102014205466B4 DE 102014205466 A DE102014205466 A DE 102014205466A DE 102014205466 B4 DE102014205466 B4 DE 102014205466B4
Authority
DE
Germany
Prior art keywords
single crystal
sic
recesses
sic layer
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102014205466.4A
Other languages
German (de)
English (en)
Other versions
DE102014205466A1 (de
Inventor
Akihito Ohno
Zempei Kawazu
Nobuyuki Tomita
Takanori Tanaka
Yoichiro Mitani
Kenichi Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102014205466A1 publication Critical patent/DE102014205466A1/de
Application granted granted Critical
Publication of DE102014205466B4 publication Critical patent/DE102014205466B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE102014205466.4A 2013-03-26 2014-03-24 Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung Active DE102014205466B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-064365 2013-03-26
JP2013064365A JP6123408B2 (ja) 2013-03-26 2013-03-26 単結晶４Ｈ−ＳｉＣ基板及びその製造方法

Publications (2)

Publication Number Publication Date
DE102014205466A1 DE102014205466A1 (de) 2014-10-02
DE102014205466B4 true DE102014205466B4 (de) 2017-02-23

Family

ID=51520039

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014205466.4A Active DE102014205466B4 (de) 2013-03-26 2014-03-24 Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (3) US9422640B2 (enExample)
JP (1) JP6123408B2 (enExample)
KR (1) KR101607907B1 (enExample)
CN (1) CN104078331B (enExample)
DE (1) DE102014205466B4 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9957641B2 (en) 2014-08-01 2018-05-01 Sumitomo Electric Industries, Ltd. Epitaxial wafer and method for manufacturing same
DE112015003959T5 (de) * 2014-08-29 2017-05-18 Sumitomo Electric Industries Ltd. Siliziumkarbid-Halbleitervorrichtung und Verfahren zur Herstellung derselben
US20180233562A1 (en) * 2014-10-01 2018-08-16 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate
JP2016127177A (ja) * 2015-01-06 2016-07-11 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法
US9368415B1 (en) 2015-02-25 2016-06-14 International Business Machines Corporation Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layers
JP6690282B2 (ja) 2016-02-15 2020-04-28 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6672962B2 (ja) * 2016-03-31 2020-03-25 住友電気工業株式会社 炭化珪素半導体基板および半導体装置の製造方法
JP2017122047A (ja) * 2017-03-29 2017-07-13 三菱電機株式会社 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
KR101998138B1 (ko) 2017-04-20 2019-07-09 한국세라믹기술원 자외선 포토루미네선스를 이용한 결정의 폴리타입 분석방법
JP6564151B1 (ja) * 2019-02-28 2019-08-21 株式会社アドマップ ＳｉＣ膜単体構造体
CN114242644B (zh) * 2021-11-17 2024-10-25 中国电子科技集团公司第五十五研究所 一种碳化硅沟槽结构外延填充方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
US20120280254A1 (en) * 2009-12-14 2012-11-08 Showa Denko K.K. Sic epitaxial wafer and method for manufacturing same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW565630B (en) * 1999-09-07 2003-12-11 Sixon Inc SiC wafer, SiC semiconductor device and method for manufacturing SiC wafer
KR100984261B1 (ko) * 2002-03-19 2010-09-30 자이단호징 덴료쿠추오켄큐쇼 SiC 결정의 제조 방법 및 SiC 결정
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
JP4786223B2 (ja) * 2005-05-24 2011-10-05 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP4933137B2 (ja) * 2006-04-28 2012-05-16 学校法人 名城大学 半導体および半導体製造方法
JP4959763B2 (ja) 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
CN101877309B (zh) * 2009-10-30 2011-09-21 西安电子科技大学 提高4H-SiC基面位错转化率的外延方法
US20110221039A1 (en) 2010-03-12 2011-09-15 Sinmat, Inc. Defect capping for reduced defect density epitaxial articles
JP5693946B2 (ja) 2010-03-29 2015-04-01 エア・ウォーター株式会社 単結晶３Ｃ−ＳｉＣ基板の製造方法
JP5598542B2 (ja) 2010-05-10 2014-10-01 三菱電機株式会社 炭化珪素エピタキシャルウエハ及びその製造方法並びにエピタキシャル成長用炭化珪素バルク基板及びその製造方法
JP5678622B2 (ja) * 2010-12-03 2015-03-04 株式会社デンソー 炭化珪素単結晶の製造方法
JP5637086B2 (ja) * 2011-07-07 2014-12-10 三菱電機株式会社 エピタキシャルウエハ及び半導体素子
JP5597174B2 (ja) 2011-09-20 2014-10-01 株式会社日立製作所 アブレイダブルコーティングを有する部材およびガスタービン
JP2013251419A (ja) * 2012-06-01 2013-12-12 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
US20120280254A1 (en) * 2009-12-14 2012-11-08 Showa Denko K.K. Sic epitaxial wafer and method for manufacturing same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Surface Morphology of Silicon Carbide Epitaxial Films", J. A. Powell et al, J. Electronic Materials., Vol. 24(4), 1995, S. 295-301. *

Also Published As

Publication number Publication date
JP2014189422A (ja) 2014-10-06
CN104078331A (zh) 2014-10-01
CN104078331B (zh) 2017-03-01
US9752254B2 (en) 2017-09-05
US9903048B2 (en) 2018-02-27
US20140295136A1 (en) 2014-10-02
DE102014205466A1 (de) 2014-10-02
US20160298264A1 (en) 2016-10-13
US20160298262A1 (en) 2016-10-13
KR101607907B1 (ko) 2016-03-31
JP6123408B2 (ja) 2017-05-10
US9422640B2 (en) 2016-08-23
KR20140117277A (ko) 2014-10-07

Similar Documents

Publication Publication Date Title
DE102014205466B4 (de) Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung
DE112010000953B4 (de) Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung
DE102007047231B4 (de) Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung
DE60033829T2 (de) SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
DE112013006661B4 (de) Verfahren zum Herstellen eines SIC-Epitaxialwafers
DE112010003214B4 (de) Epitaxiesubstrat für eine halbleitervorrichtung, verfahren zur herstellung eines epitaxiesubstrats für eine halbleitervorrichtung, und halbleitervorrichtung
DE69430550T2 (de) Verbesserungen der Heteroepitaxie durch grosse Oberflächenstufen
DE69203736T3 (de) Kristallzuchtverfahren für Halbleiter auf Galliumnitrid-Basis.
DE602005004280T2 (de) Verfahren zum ziehen von sic-einkristallen und sic-einkristall
DE112014004744B4 (de) Vertikales Nitrid-Halbleiterbauelement und laminierter Körper
DE102015202131B4 (de) Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung und Siliziumkarbid-Halbleitervorrichtung
DE4138121C2 (de) Verfahren zur Herstellung einer Solarzelle
DE3587377T2 (de) Verfahren zur herstellung von halbleiteranordnungen unter verwendung von silizium-auf- isolator techniken.
DE102008037357A1 (de) Halbleitersubstrat aus Siliziumkarbid und Halbleiterelement mit einem solchen Substrat
DE202013012603U1 (de) Siliziumkarbid-Substrat und Halbleitervorrichtung
DE112018002540B4 (de) SIC-Epitaxiewafer und Verfahren zum Herstellen desselben
DE112014003533T5 (de) Halbleiterwafer und Verfahren zur Herstellung des Halbleiterwafers
DE102014118336A1 (de) Verbundstruktur und verfahren zum bilden einer verbundstruktur
DE102013106683A1 (de) Halbleitervorrichtungen und Verfahren zur Herstellung derselben
DE212020000802U1 (de) Epitaxiesubstrat mit 2D-Material-Zwischenschicht und dessen Herstellungsverfahren und Herstellung von Bauelementen
DE112021001085B4 (de) Herstellungsverfahren für Halbleiter-Siliziumwafer
DE102018213437B4 (de) Verfahren zur Herstellung von Galliumnitridsubstrat unter Verwendung von Hydrid-Gasphasenepitaxie
DE102009019281B4 (de) Oberflächenbehandlungsverfahren für Gruppe-III-Nitrid-Halbleiter und Verfahren zum Herstellen desselben
DE102021113253B4 (de) Verfahren zur Herstellung eines Siliziumkarbid-Epitaxie-Wafers
DE102012209706B4 (de) Verfahren zur Herstellung von zwei Bauelement-Wafern aus einem einzelnen Basissubstrat durch Anwendung eines gesteuerten Abspaltprozesses

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R082 Change of representative

Representative=s name: PRUEFER & PARTNER GBR, DE

Representative=s name: HOEFER & PARTNER PATENTANWAELTE MBB, DE

R082 Change of representative

Representative=s name: HOEFER & PARTNER PATENTANWAELTE MBB, DE

R084 Declaration of willingness to licence
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final