CN104078331B - 单晶4H‑SiC衬底及其制造方法 - Google Patents

单晶4H‑SiC衬底及其制造方法 Download PDF

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Publication number
CN104078331B
CN104078331B CN201410112911.3A CN201410112911A CN104078331B CN 104078331 B CN104078331 B CN 104078331B CN 201410112911 A CN201410112911 A CN 201410112911A CN 104078331 B CN104078331 B CN 104078331B
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single crystal
sic
substrate
layer
crystal
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Chinese (zh)
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CN104078331A (zh
Inventor
大野彰仁
川津善平
富田信之
田中贵规
三谷阳郎
三谷阳一郎
浜野健
浜野健一
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Mitsubishi Corp
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Mitsubishi Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CN201410112911.3A 2013-03-26 2014-03-25 单晶4H‑SiC衬底及其制造方法 Active CN104078331B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013064365A JP6123408B2 (ja) 2013-03-26 2013-03-26 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
JP2013-064365 2013-03-26

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CN104078331A CN104078331A (zh) 2014-10-01
CN104078331B true CN104078331B (zh) 2017-03-01

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US (3) US9422640B2 (enExample)
JP (1) JP6123408B2 (enExample)
KR (1) KR101607907B1 (enExample)
CN (1) CN104078331B (enExample)
DE (1) DE102014205466B4 (enExample)

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CN110747507B (zh) 2014-08-01 2021-03-19 住友电气工业株式会社 外延晶片
CN106796886B (zh) * 2014-08-29 2020-05-01 住友电气工业株式会社 碳化硅半导体器件和用于制造碳化硅半导体器件的方法
WO2016051975A1 (ja) * 2014-10-01 2016-04-07 住友電気工業株式会社 炭化珪素エピタキシャル基板
JP2016127177A (ja) * 2015-01-06 2016-07-11 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法
US9368415B1 (en) 2015-02-25 2016-06-14 International Business Machines Corporation Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layers
JP6690282B2 (ja) * 2016-02-15 2020-04-28 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6672962B2 (ja) * 2016-03-31 2020-03-25 住友電気工業株式会社 炭化珪素半導体基板および半導体装置の製造方法
JP2017122047A (ja) * 2017-03-29 2017-07-13 三菱電機株式会社 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
KR101998138B1 (ko) 2017-04-20 2019-07-09 한국세라믹기술원 자외선 포토루미네선스를 이용한 결정의 폴리타입 분석방법
JP6564151B1 (ja) * 2019-02-28 2019-08-21 株式会社アドマップ ＳｉＣ膜単体構造体
CN114242644B (zh) * 2021-11-17 2024-10-25 中国电子科技集团公司第五十五研究所 一种碳化硅沟槽结构外延填充方法

Citations (2)

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US6734461B1 (en) * 1999-09-07 2004-05-11 Sixon Inc. SiC wafer, SiC semiconductor device, and production method of SiC wafer
CN101877309A (zh) * 2009-10-30 2010-11-03 西安电子科技大学 提高4H-SiC基面位错转化率的外延方法

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JPH0952796A (ja) 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
CN1324168C (zh) * 2002-03-19 2007-07-04 财团法人电力中央研究所 SiC结晶的制造方法以及SiC结晶
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
JP4786223B2 (ja) * 2005-05-24 2011-10-05 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP4933137B2 (ja) * 2006-04-28 2012-05-16 学校法人 名城大学 半導体および半導体製造方法
JP4959763B2 (ja) 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JP4887418B2 (ja) 2009-12-14 2012-02-29 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
US20110221039A1 (en) 2010-03-12 2011-09-15 Sinmat, Inc. Defect capping for reduced defect density epitaxial articles
JP5693946B2 (ja) 2010-03-29 2015-04-01 エア・ウォーター株式会社 単結晶３Ｃ−ＳｉＣ基板の製造方法
JP5598542B2 (ja) 2010-05-10 2014-10-01 三菱電機株式会社 炭化珪素エピタキシャルウエハ及びその製造方法並びにエピタキシャル成長用炭化珪素バルク基板及びその製造方法
JP5678622B2 (ja) * 2010-12-03 2015-03-04 株式会社デンソー 炭化珪素単結晶の製造方法
JP5637086B2 (ja) * 2011-07-07 2014-12-10 三菱電機株式会社 エピタキシャルウエハ及び半導体素子
JP5597174B2 (ja) 2011-09-20 2014-10-01 株式会社日立製作所 アブレイダブルコーティングを有する部材およびガスタービン
JP2013251419A (ja) * 2012-06-01 2013-12-12 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法

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US6734461B1 (en) * 1999-09-07 2004-05-11 Sixon Inc. SiC wafer, SiC semiconductor device, and production method of SiC wafer
CN101877309A (zh) * 2009-10-30 2010-11-03 西安电子科技大学 提高4H-SiC基面位错转化率的外延方法

Also Published As

Publication number Publication date
JP6123408B2 (ja) 2017-05-10
DE102014205466A1 (de) 2014-10-02
US20160298264A1 (en) 2016-10-13
KR20140117277A (ko) 2014-10-07
US20160298262A1 (en) 2016-10-13
DE102014205466B4 (de) 2017-02-23
JP2014189422A (ja) 2014-10-06
KR101607907B1 (ko) 2016-03-31
CN104078331A (zh) 2014-10-01
US9752254B2 (en) 2017-09-05
US9903048B2 (en) 2018-02-27
US9422640B2 (en) 2016-08-23
US20140295136A1 (en) 2014-10-02

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