JP6121961B2 - 抵抗変化メモリ - Google Patents

抵抗変化メモリ Download PDF

Info

Publication number
JP6121961B2
JP6121961B2 JP2014188737A JP2014188737A JP6121961B2 JP 6121961 B2 JP6121961 B2 JP 6121961B2 JP 2014188737 A JP2014188737 A JP 2014188737A JP 2014188737 A JP2014188737 A JP 2014188737A JP 6121961 B2 JP6121961 B2 JP 6121961B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
fin
layer
extending
resistance change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014188737A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016063023A5 (enExample
JP2016063023A (ja
Inventor
千加 田中
千加 田中
紘希 野口
紘希 野口
藤田　忍
忍 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2014188737A priority Critical patent/JP6121961B2/ja
Priority to PCT/JP2015/068824 priority patent/WO2016042880A1/ja
Priority to US15/054,706 priority patent/US9954029B2/en
Publication of JP2016063023A publication Critical patent/JP2016063023A/ja
Publication of JP2016063023A5 publication Critical patent/JP2016063023A5/ja
Application granted granted Critical
Publication of JP6121961B2 publication Critical patent/JP6121961B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2014188737A 2014-09-17 2014-09-17 抵抗変化メモリ Active JP6121961B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014188737A JP6121961B2 (ja) 2014-09-17 2014-09-17 抵抗変化メモリ
PCT/JP2015/068824 WO2016042880A1 (ja) 2014-09-17 2015-06-30 抵抗変化メモリ
US15/054,706 US9954029B2 (en) 2014-09-17 2016-02-26 Resistance change memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014188737A JP6121961B2 (ja) 2014-09-17 2014-09-17 抵抗変化メモリ

Publications (3)

Publication Number Publication Date
JP2016063023A JP2016063023A (ja) 2016-04-25
JP2016063023A5 JP2016063023A5 (enExample) 2016-11-10
JP6121961B2 true JP6121961B2 (ja) 2017-04-26

Family

ID=55532925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014188737A Active JP6121961B2 (ja) 2014-09-17 2014-09-17 抵抗変化メモリ

Country Status (3)

Country Link
US (1) US9954029B2 (enExample)
JP (1) JP6121961B2 (enExample)
WO (1) WO2016042880A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10043971B2 (en) 2014-11-18 2018-08-07 Intel Corporation Non-volatile register file including memory cells having conductive oxide memory element
KR20160122912A (ko) 2015-04-14 2016-10-25 에스케이하이닉스 주식회사 전자 장치
US9679643B1 (en) 2016-03-09 2017-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Resistive memory device having a trimmable resistance of at least on of a driver and a sinker is trimmed based on a row location
KR102633141B1 (ko) * 2016-12-07 2024-02-02 삼성전자주식회사 집적회로 소자
US10797223B2 (en) * 2018-01-29 2020-10-06 Globalfoundries Singapore Pte. Ltd. Integrated circuits with magnetic random access memory (MRAM) devices and methods for fabricating such devices
JP2020155585A (ja) * 2019-03-20 2020-09-24 キオクシア株式会社 不揮発性記憶装置
US10910435B2 (en) * 2019-03-27 2021-02-02 International Business Machines Corporation Stackable symmetrical operation memory bit cell structure with bidirectional selectors
JP2021019170A (ja) * 2019-07-24 2021-02-15 ソニーセミコンダクタソリューションズ株式会社 不揮発性メモリセル、不揮発性メモリセルアレイ、及び、不揮発性メモリセルアレイの情報書き込み方法
US11121174B2 (en) * 2019-11-21 2021-09-14 International Business Machines Corporation MRAM integration into the MOL for fast 1T1M cells
US12073165B2 (en) * 2021-06-17 2024-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Standard cell design
KR20230062002A (ko) * 2021-10-29 2023-05-09 에스케이하이닉스 주식회사 반도체 메모리를 포함하는 전자 장치

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277189A (ja) * 2004-03-25 2005-10-06 Renesas Technology Corp 磁気記憶装置
TWI295506B (en) * 2005-02-03 2008-04-01 Samsung Electronics Co Ltd Semiconductor device having transistor with vertical gate electrode and method of fabricating the same
JP2008130995A (ja) * 2006-11-24 2008-06-05 Toshiba Corp 半導体記憶装置
JP5331998B2 (ja) * 2008-01-04 2013-10-30 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP5542550B2 (ja) * 2010-07-08 2014-07-09 株式会社東芝 抵抗変化メモリ
JP5518777B2 (ja) 2011-03-25 2014-06-11 株式会社東芝 半導体記憶装置
JP2013033881A (ja) * 2011-08-03 2013-02-14 Sony Corp 記憶素子及び記憶装置
US9419217B2 (en) * 2011-08-15 2016-08-16 Unity Semiconductor Corporation Vertical cross-point memory arrays
JP2013115272A (ja) 2011-11-29 2013-06-10 Toshiba Corp 半導体装置とその製造方法
JP2013162076A (ja) 2012-02-08 2013-08-19 Toshiba Corp 半導体装置およびその製造方法
JP2013175570A (ja) * 2012-02-24 2013-09-05 National Institute Of Advanced Industrial & Technology 半導体記憶装置およびその製造方法
JP5850147B2 (ja) * 2012-05-16 2016-02-03 ソニー株式会社 記憶装置、記憶素子
KR101929983B1 (ko) * 2012-07-18 2018-12-17 삼성전자주식회사 저항성 메모리 셀을 갖는 반도체 메모리 장치 및 그 테스트 방법
US9093148B2 (en) * 2013-03-22 2015-07-28 Kabushiki Kaisha Toshiba Resistance change type memory
KR102335104B1 (ko) * 2014-05-23 2021-12-03 삼성전자 주식회사 자기 소자
KR102235043B1 (ko) * 2014-06-09 2021-04-05 삼성전자주식회사 반도체 메모리 장치
KR102222799B1 (ko) * 2014-07-18 2021-03-04 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
US9443571B2 (en) * 2014-09-02 2016-09-13 Kabushiki Kaisha Toshiba Semiconductor memory, memory system and method of controlling semiconductor memory
US20160071566A1 (en) * 2014-09-04 2016-03-10 Hiromi Noro Semiconductor device

Also Published As

Publication number Publication date
US20160181319A1 (en) 2016-06-23
WO2016042880A1 (ja) 2016-03-24
US9954029B2 (en) 2018-04-24
JP2016063023A (ja) 2016-04-25

Similar Documents

Publication Publication Date Title
JP6121961B2 (ja) 抵抗変化メモリ
US9385160B2 (en) Semiconductor storage device
CN102629659B (zh) 半导体器件
JP5677186B2 (ja) 半導体記憶装置
US9799383B2 (en) Magnetic memory device
KR20040038420A (ko) 자기 메모리 및 그 제조 방법
JP2009253036A (ja) 半導体メモリ
TWI627772B (zh) 電阻變化記憶體
US20100238718A1 (en) Semiconductor memory device
JP2010212661A (ja) 磁気ランダムアクセスメモリ
US8861251B2 (en) Semiconductor storage device
US20110180861A1 (en) Magnetic random access memory having magnetoresistive effect element
US7046546B1 (en) Semiconductor memory device
JP2014049547A (ja) 半導体記憶装置
JP2009164390A (ja) 磁気記録装置
JP5076387B2 (ja) 磁気記憶装置
JP7260487B2 (ja) 半導体装置
JP2008010511A (ja) 磁気記憶装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160916

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160916

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170228

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170330

R151 Written notification of patent or utility model registration

Ref document number: 6121961

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350