JP6091197B2 - アレイ基板及び表示装置 - Google Patents
アレイ基板及び表示装置 Download PDFInfo
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- JP6091197B2 JP6091197B2 JP2012268984A JP2012268984A JP6091197B2 JP 6091197 B2 JP6091197 B2 JP 6091197B2 JP 2012268984 A JP2012268984 A JP 2012268984A JP 2012268984 A JP2012268984 A JP 2012268984A JP 6091197 B2 JP6091197 B2 JP 6091197B2
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- 239000000758 substrate Substances 0.000 title claims description 88
- 239000004973 liquid crystal related substance Substances 0.000 description 75
- 239000010408 film Substances 0.000 description 62
- 230000005684 electric field Effects 0.000 description 27
- 230000003287 optical effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
Description
以下においては、本発明の実施の形態1として、液晶モードがFFS(Fringe Field Switching)モードである液晶表示装置に本発明を適用した場合を例にして説明する。図1は、本実施の形態1に係る液晶表示装置の構成を示す断面図である。なお、図は模式的なものであり、示された構成要素の正確な大きさなどを反映するものではない。また、図面が煩雑とならないよう、発明の主要部分以外の省略や一部簡略化などを適宜行っている(以下の図においても同様)。さらに、以下の図においては、図中、既出の図において説明したものと同一または類似する構成要素には同一の符号を付し、その説明を省略する。
図1に示すように、この液晶表示装置は、透過型の液晶表示パネルLPNと、照明ユニットすなわちバックライトユニットBLとを備えている。
次に、液晶表示パネルLPNがアクティブマトリクスタイプの液晶表示パネルであるものとして、液晶表示パネルLPNの平面構造を詳細に説明する。図2は、液晶表示パネルLPNの構成を概略的に示す平面図である。
次に、図1に戻って、液晶表示パネルLPNの断面構造について説明する。ここではまず、アレイ基板ARの断面構造について説明する。
Claims (7)
- 表示装置におけるスイッチング素子のアレイ基板であって、
前記スイッチング素子上に第1絶縁膜を介して形成された第1電極と、
前記第1電極上に第2絶縁膜を介して形成された第2電極と、
前記第1絶縁膜、前記第1電極、及び、前記第2絶縁膜を貫通して設けられた平面視にて1つのコンタクトホール内に配設され、前記スイッチング素子のドレイン電極と前記第2電極とを電気的に接続する接続部と
を備え、
前記1つのコンタクトホールは、前記スイッチング素子と接続されたゲート線をくり抜いて設けられた所定領域内に配置されており、
前記第1電極は、前記接続部と離間され、
前記第1電極の前記接続部側の端部は、前記所定領域内に配置されている、アレイ基板。 - 請求項1に記載のアレイ基板であって、
前記ゲート線の前記所定領域近傍の端部は、前記第1電極に覆われている、アレイ基板。 - 請求項1または請求項2に記載のアレイ基板であって、
前記第2電極上に形成され、前記ゲート線が延在する延在方向に沿ってラビング処理された配向膜をさらに備える、アレイ基板。 - 請求項1乃至請求項3のいずれかに記載のアレイ基板であって、
前記スイッチング素子は、行方向及び列方向に沿って複数設けられ、
前記第2電極には、長軸が前記行方向及び前記列方向のいずれとも非平行であるスリットが設けられている、アレイ基板。 - 請求項1乃至請求項4のいずれかに記載のアレイ基板であって、
前記第1電極の、前記スイッチング素子上方に対応する領域には開口部が設けられ、
前記開口部が、前記ゲート線の線幅方向の両端部よりも内側に設けられることにより、前記ゲート線の当該両端部は、前記第1電極に覆われている、アレイ基板。 - 請求項1乃至請求項4のいずれかに記載のアレイ基板であって、
前記第1電極は、
前記接続部を除いて前記第1絶縁膜全面に形成されている、アレイ基板。 - 請求項1乃至請求項6のいずれかに記載のアレイ基板と、
前記アレイ基板と対向配置される対向基板と
を備える、表示装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012268984A JP6091197B2 (ja) | 2012-12-10 | 2012-12-10 | アレイ基板及び表示装置 |
CN201310523328.7A CN103869567B (zh) | 2012-12-10 | 2013-10-30 | 阵列基板以及显示装置 |
US14/071,367 US9666608B2 (en) | 2012-12-10 | 2013-11-04 | Array substrate and display device |
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JP2012268984A JP6091197B2 (ja) | 2012-12-10 | 2012-12-10 | アレイ基板及び表示装置 |
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JP2014115434A JP2014115434A (ja) | 2014-06-26 |
JP2014115434A5 JP2014115434A5 (ja) | 2016-01-07 |
JP6091197B2 true JP6091197B2 (ja) | 2017-03-08 |
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US (1) | US9666608B2 (ja) |
JP (1) | JP6091197B2 (ja) |
CN (1) | CN103869567B (ja) |
Families Citing this family (8)
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CN202404339U (zh) * | 2012-01-12 | 2012-08-29 | 京东方科技集团股份有限公司 | 阵列基板及包括该阵列基板的显示装置 |
US9726953B2 (en) * | 2012-04-18 | 2017-08-08 | Sharp Kabushiki Kaisha | Active matrix substrate and liquid-crystal display device |
KR102182428B1 (ko) * | 2014-02-18 | 2020-11-25 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN104241296B (zh) * | 2014-08-21 | 2017-12-08 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法和显示装置 |
TWI647524B (zh) * | 2017-05-09 | 2019-01-11 | 友達光電股份有限公司 | 陣列基板及液晶顯示面板 |
CN107369716B (zh) | 2017-07-17 | 2021-02-12 | 京东方科技集团股份有限公司 | 薄膜晶体管及制作方法、显示装置 |
US11201175B2 (en) * | 2018-11-21 | 2021-12-14 | Sharp Kabushiki Kaisha | Array substrate with capacitance forming portion to hold potential at electrode |
JP2022030066A (ja) * | 2020-08-06 | 2022-02-18 | シャープ株式会社 | 液晶表示パネルおよびその製造方法 |
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2012
- 2012-12-10 JP JP2012268984A patent/JP6091197B2/ja active Active
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2013
- 2013-10-30 CN CN201310523328.7A patent/CN103869567B/zh active Active
- 2013-11-04 US US14/071,367 patent/US9666608B2/en active Active
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US20140159070A1 (en) | 2014-06-12 |
CN103869567B (zh) | 2016-08-31 |
JP2014115434A (ja) | 2014-06-26 |
US9666608B2 (en) | 2017-05-30 |
CN103869567A (zh) | 2014-06-18 |
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