JP6071524B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP6071524B2
JP6071524B2 JP2012277254A JP2012277254A JP6071524B2 JP 6071524 B2 JP6071524 B2 JP 6071524B2 JP 2012277254 A JP2012277254 A JP 2012277254A JP 2012277254 A JP2012277254 A JP 2012277254A JP 6071524 B2 JP6071524 B2 JP 6071524B2
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Japan
Prior art keywords
film
silicon oxide
hydrogen
memory device
charge storage
Prior art date
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JP2012277254A
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English (en)
Japanese (ja)
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JP2014120735A (ja
JP2014120735A5 (enExample
Inventor
野 泉 平
野 泉 平
谷 祐一郎 三
谷 祐一郎 三
田 正 靖 宮
田 正 靖 宮
崎 靖 中
崎 靖 中
藤 弘 一 加
藤 弘 一 加
松　下　大　介
下 大 介 松
島 章 高
島 章 高
田 美砂子 諸
田 美砂子 諸
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Toshiba Corp
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Toshiba Corp
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Publication date
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Priority to JP2012277254A priority Critical patent/JP6071524B2/ja
Priority to US14/108,633 priority patent/US9349876B2/en
Publication of JP2014120735A publication Critical patent/JP2014120735A/ja
Publication of JP2014120735A5 publication Critical patent/JP2014120735A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/689—Vertical floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2012277254A 2012-12-19 2012-12-19 不揮発性半導体記憶装置 Active JP6071524B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012277254A JP6071524B2 (ja) 2012-12-19 2012-12-19 不揮発性半導体記憶装置
US14/108,633 US9349876B2 (en) 2012-12-19 2013-12-17 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012277254A JP6071524B2 (ja) 2012-12-19 2012-12-19 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2014120735A JP2014120735A (ja) 2014-06-30
JP2014120735A5 JP2014120735A5 (enExample) 2015-06-25
JP6071524B2 true JP6071524B2 (ja) 2017-02-01

Family

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Family Applications (1)

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JP2012277254A Active JP6071524B2 (ja) 2012-12-19 2012-12-19 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (1) US9349876B2 (enExample)
JP (1) JP6071524B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102293874B1 (ko) 2014-12-10 2021-08-25 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법
KR102321877B1 (ko) * 2015-02-16 2021-11-08 삼성전자주식회사 전하 저장층들을 포함하는 비휘발성 메모리 장치
US9806092B1 (en) 2016-09-12 2017-10-31 Toshiba Memory Corporation Semiconductor memory device and methods for manufacturing the same
US10243052B2 (en) 2016-09-14 2019-03-26 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing the same
WO2018167591A1 (ja) 2017-03-13 2018-09-20 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US12027632B2 (en) * 2021-04-19 2024-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with barrier and method for manufacturing the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321237A (ja) * 1994-05-25 1995-12-08 Mitsubishi Electric Corp 半導体装置の製造方法
JP3529989B2 (ja) * 1997-09-12 2004-05-24 株式会社東芝 成膜方法及び半導体装置の製造方法
JP2000269366A (ja) * 1999-03-19 2000-09-29 Toshiba Corp 不揮発性半導体メモリ
JP2000353757A (ja) * 1999-06-10 2000-12-19 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US6518618B1 (en) * 1999-12-03 2003-02-11 Intel Corporation Integrated memory cell and method of fabrication
JP2003243625A (ja) * 2002-02-19 2003-08-29 Seiko Epson Corp 強誘電体メモリ装置およびその製造方法
US8367493B1 (en) * 2005-04-20 2013-02-05 Spansion Llc Void free interlayer dielectric
JP2007184323A (ja) * 2006-01-04 2007-07-19 Renesas Technology Corp 半導体装置および半導体装置の製造方法
JP5032145B2 (ja) * 2006-04-14 2012-09-26 株式会社東芝 半導体装置
JP2008166518A (ja) * 2006-12-28 2008-07-17 Toshiba Corp 不揮発性半導体記憶装置
JP2008177343A (ja) * 2007-01-18 2008-07-31 Renesas Technology Corp 半導体装置とその製造方法
JP2009054951A (ja) 2007-08-29 2009-03-12 Toshiba Corp 不揮発性半導体記憶素子及びその製造方法
JP5112201B2 (ja) * 2008-07-11 2013-01-09 株式会社東芝 不揮発性半導体記憶装置
JP5279403B2 (ja) * 2008-08-18 2013-09-04 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP5416936B2 (ja) * 2008-09-02 2014-02-12 株式会社東芝 半導体装置およびその製造方法
JP5472894B2 (ja) 2008-09-25 2014-04-16 株式会社東芝 不揮発性半導体記憶装置
JP2010177323A (ja) * 2009-01-28 2010-08-12 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP5336872B2 (ja) * 2009-02-06 2013-11-06 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP2011071334A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 不揮発性半導体記憶装置
JP2011187794A (ja) * 2010-03-10 2011-09-22 Toshiba Corp 半導体記憶装置及びその製造方法

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Publication number Publication date
JP2014120735A (ja) 2014-06-30
US20140167133A1 (en) 2014-06-19
US9349876B2 (en) 2016-05-24

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