JP6051814B2 - 高周波装置 - Google Patents

高周波装置 Download PDF

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Publication number
JP6051814B2
JP6051814B2 JP2012258889A JP2012258889A JP6051814B2 JP 6051814 B2 JP6051814 B2 JP 6051814B2 JP 2012258889 A JP2012258889 A JP 2012258889A JP 2012258889 A JP2012258889 A JP 2012258889A JP 6051814 B2 JP6051814 B2 JP 6051814B2
Authority
JP
Japan
Prior art keywords
signal line
dielectric
main surface
base plate
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012258889A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014107398A5 (https=
JP2014107398A (ja
Inventor
三輪　真一
真一 三輪
翔平 今井
翔平 今井
公春 服部
公春 服部
貴章 吉岡
貴章 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012258889A priority Critical patent/JP6051814B2/ja
Priority to US13/961,976 priority patent/US9484321B2/en
Priority to DE102013223500.3A priority patent/DE102013223500B4/de
Priority to CN201310604642.8A priority patent/CN103887269B/zh
Publication of JP2014107398A publication Critical patent/JP2014107398A/ja
Publication of JP2014107398A5 publication Critical patent/JP2014107398A5/ja
Application granted granted Critical
Publication of JP6051814B2 publication Critical patent/JP6051814B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H10W44/234—Arrangements for impedance matching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads

Landscapes

  • Waveguides (AREA)
  • Microwave Amplifiers (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2012258889A 2012-11-27 2012-11-27 高周波装置 Expired - Fee Related JP6051814B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012258889A JP6051814B2 (ja) 2012-11-27 2012-11-27 高周波装置
US13/961,976 US9484321B2 (en) 2012-11-27 2013-08-08 High frequency device
DE102013223500.3A DE102013223500B4 (de) 2012-11-27 2013-11-18 Hochfrequenzvorrichtung
CN201310604642.8A CN103887269B (zh) 2012-11-27 2013-11-26 高频装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012258889A JP6051814B2 (ja) 2012-11-27 2012-11-27 高周波装置

Publications (3)

Publication Number Publication Date
JP2014107398A JP2014107398A (ja) 2014-06-09
JP2014107398A5 JP2014107398A5 (https=) 2015-11-05
JP6051814B2 true JP6051814B2 (ja) 2016-12-27

Family

ID=50679189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012258889A Expired - Fee Related JP6051814B2 (ja) 2012-11-27 2012-11-27 高周波装置

Country Status (4)

Country Link
US (1) US9484321B2 (https=)
JP (1) JP6051814B2 (https=)
CN (1) CN103887269B (https=)
DE (1) DE102013223500B4 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9390048B2 (en) * 2013-12-04 2016-07-12 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Controlling characteristic impedance of a trace in a printed circuit board to compensate for external component loading
JP6462535B2 (ja) * 2015-08-28 2019-01-30 株式会社東芝 高周波半導体装置
JP6494474B2 (ja) * 2015-09-08 2019-04-03 株式会社東芝 高周波半導体装置
JP6852841B2 (ja) * 2016-12-28 2021-03-31 住友電工デバイス・イノベーション株式会社 半導体装置
JP6907332B2 (ja) 2017-11-14 2021-07-21 日本碍子株式会社 パッケージおよび半導体装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593557U (ja) * 1982-06-30 1984-01-11 三菱電機株式会社 モノリシツクマイクロ波集積回路
JPH0380601A (ja) * 1989-07-26 1991-04-05 Mitsubishi Electric Corp マイクロ波変換回路
JPH03119803A (ja) 1989-10-03 1991-05-22 Kyocera Corp マイクロ波平面回路調整方法
JPH03195049A (ja) 1989-12-25 1991-08-26 Hitachi Ltd 半導体集積回路装置
JPH05121913A (ja) * 1991-10-24 1993-05-18 Shinko Electric Ind Co Ltd 高周波素子用パツケージ
JPH08288701A (ja) 1995-04-14 1996-11-01 Mitsubishi Electric Corp マイクロ波集積回路装置
JP3297607B2 (ja) * 1996-09-19 2002-07-02 京セラ株式会社 高周波回路用パッケージ
US6072211A (en) 1998-08-03 2000-06-06 Motorola, Inc. Semiconductor package
JP2001144510A (ja) * 1999-11-15 2001-05-25 Nec Corp マイクロ波回路の特性調整回路および特性調整方法
JP3728393B2 (ja) 2000-02-16 2005-12-21 三菱電機株式会社 半導体装置
JP4519637B2 (ja) 2004-12-28 2010-08-04 株式会社東芝 半導体装置
JP4575261B2 (ja) * 2005-09-14 2010-11-04 株式会社東芝 高周波用パッケージ
US7683480B2 (en) 2006-03-29 2010-03-23 Freescale Semiconductor, Inc. Methods and apparatus for a reduced inductance wirebond array
JP2011171697A (ja) 2010-01-22 2011-09-01 Toshiba Corp 高周波半導体装置
JP5450313B2 (ja) 2010-08-06 2014-03-26 株式会社東芝 高周波半導体用パッケージおよびその作製方法
JP5636834B2 (ja) * 2010-09-10 2014-12-10 富士通株式会社 高周波回路用パッケージ及び高周波回路装置

Also Published As

Publication number Publication date
JP2014107398A (ja) 2014-06-09
CN103887269A (zh) 2014-06-25
DE102013223500A1 (de) 2014-05-28
CN103887269B (zh) 2017-01-04
US20140146506A1 (en) 2014-05-29
DE102013223500B4 (de) 2022-03-24
US9484321B2 (en) 2016-11-01

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