DE102013223500B4 - Hochfrequenzvorrichtung - Google Patents

Hochfrequenzvorrichtung Download PDF

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Publication number
DE102013223500B4
DE102013223500B4 DE102013223500.3A DE102013223500A DE102013223500B4 DE 102013223500 B4 DE102013223500 B4 DE 102013223500B4 DE 102013223500 A DE102013223500 A DE 102013223500A DE 102013223500 B4 DE102013223500 B4 DE 102013223500B4
Authority
DE
Germany
Prior art keywords
signal line
dielectric
island pattern
island
frequency device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102013223500.3A
Other languages
German (de)
English (en)
Other versions
DE102013223500A1 (de
Inventor
Shinichi Miwa
Shohei Imai
Masaharu Hattori
Takaaki Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102013223500A1 publication Critical patent/DE102013223500A1/de
Application granted granted Critical
Publication of DE102013223500B4 publication Critical patent/DE102013223500B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H10W44/234Arrangements for impedance matching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads

Landscapes

  • Waveguides (AREA)
  • Microwave Amplifiers (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
DE102013223500.3A 2012-11-27 2013-11-18 Hochfrequenzvorrichtung Expired - Fee Related DE102013223500B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-258889 2012-11-27
JP2012258889A JP6051814B2 (ja) 2012-11-27 2012-11-27 高周波装置

Publications (2)

Publication Number Publication Date
DE102013223500A1 DE102013223500A1 (de) 2014-05-28
DE102013223500B4 true DE102013223500B4 (de) 2022-03-24

Family

ID=50679189

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013223500.3A Expired - Fee Related DE102013223500B4 (de) 2012-11-27 2013-11-18 Hochfrequenzvorrichtung

Country Status (4)

Country Link
US (1) US9484321B2 (https=)
JP (1) JP6051814B2 (https=)
CN (1) CN103887269B (https=)
DE (1) DE102013223500B4 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9390048B2 (en) * 2013-12-04 2016-07-12 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Controlling characteristic impedance of a trace in a printed circuit board to compensate for external component loading
JP6462535B2 (ja) * 2015-08-28 2019-01-30 株式会社東芝 高周波半導体装置
JP6494474B2 (ja) * 2015-09-08 2019-04-03 株式会社東芝 高周波半導体装置
JP6852841B2 (ja) * 2016-12-28 2021-03-31 住友電工デバイス・イノベーション株式会社 半導体装置
JP6907332B2 (ja) 2017-11-14 2021-07-21 日本碍子株式会社 パッケージおよび半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288701A (ja) 1995-04-14 1996-11-01 Mitsubishi Electric Corp マイクロ波集積回路装置
US6072211A (en) 1998-08-03 2000-06-06 Motorola, Inc. Semiconductor package
JP2001230640A (ja) 2000-02-16 2001-08-24 Mitsubishi Electric Corp 半導体装置
US20060139903A1 (en) 2004-12-28 2006-06-29 Kabushiki Kaisha Toshiba Semiconductor device
US20070235855A1 (en) 2006-03-29 2007-10-11 Bokatius Mario M Methods and apparatus for a reduced inductance wirebond array
US20110181350A1 (en) 2010-01-22 2011-07-28 Kabushiki Kaisha Toshiba High frequency semiconductor device
US20120061133A1 (en) 2010-09-10 2012-03-15 Fujitsu Limited High-frequency circuit package and high-frequency circuit device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593557U (ja) * 1982-06-30 1984-01-11 三菱電機株式会社 モノリシツクマイクロ波集積回路
JPH0380601A (ja) * 1989-07-26 1991-04-05 Mitsubishi Electric Corp マイクロ波変換回路
JPH03119803A (ja) 1989-10-03 1991-05-22 Kyocera Corp マイクロ波平面回路調整方法
JPH03195049A (ja) 1989-12-25 1991-08-26 Hitachi Ltd 半導体集積回路装置
JPH05121913A (ja) * 1991-10-24 1993-05-18 Shinko Electric Ind Co Ltd 高周波素子用パツケージ
JP3297607B2 (ja) * 1996-09-19 2002-07-02 京セラ株式会社 高周波回路用パッケージ
JP2001144510A (ja) * 1999-11-15 2001-05-25 Nec Corp マイクロ波回路の特性調整回路および特性調整方法
JP4575261B2 (ja) * 2005-09-14 2010-11-04 株式会社東芝 高周波用パッケージ
JP5450313B2 (ja) 2010-08-06 2014-03-26 株式会社東芝 高周波半導体用パッケージおよびその作製方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288701A (ja) 1995-04-14 1996-11-01 Mitsubishi Electric Corp マイクロ波集積回路装置
US6072211A (en) 1998-08-03 2000-06-06 Motorola, Inc. Semiconductor package
JP2001230640A (ja) 2000-02-16 2001-08-24 Mitsubishi Electric Corp 半導体装置
US20060139903A1 (en) 2004-12-28 2006-06-29 Kabushiki Kaisha Toshiba Semiconductor device
US20070235855A1 (en) 2006-03-29 2007-10-11 Bokatius Mario M Methods and apparatus for a reduced inductance wirebond array
US20110181350A1 (en) 2010-01-22 2011-07-28 Kabushiki Kaisha Toshiba High frequency semiconductor device
US20120061133A1 (en) 2010-09-10 2012-03-15 Fujitsu Limited High-frequency circuit package and high-frequency circuit device

Also Published As

Publication number Publication date
JP6051814B2 (ja) 2016-12-27
JP2014107398A (ja) 2014-06-09
CN103887269A (zh) 2014-06-25
DE102013223500A1 (de) 2014-05-28
CN103887269B (zh) 2017-01-04
US20140146506A1 (en) 2014-05-29
US9484321B2 (en) 2016-11-01

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R020 Patent grant now final
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee