JP6042613B2 - 中間的な熱膨張係数を有するガラス - Google Patents
中間的な熱膨張係数を有するガラス Download PDFInfo
- Publication number
- JP6042613B2 JP6042613B2 JP2011531105A JP2011531105A JP6042613B2 JP 6042613 B2 JP6042613 B2 JP 6042613B2 JP 2011531105 A JP2011531105 A JP 2011531105A JP 2011531105 A JP2011531105 A JP 2011531105A JP 6042613 B2 JP6042613 B2 JP 6042613B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- mol
- glasses
- photovoltaic
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011521 glass Substances 0.000 title claims description 142
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 229910052708 sodium Inorganic materials 0.000 claims description 11
- 229910052783 alkali metal Inorganic materials 0.000 claims description 9
- 150000001340 alkali metals Chemical class 0.000 claims description 9
- 229910052700 potassium Inorganic materials 0.000 claims description 7
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- 238000003286 fusion draw glass process Methods 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 238000002844 melting Methods 0.000 description 18
- 230000008018 melting Effects 0.000 description 18
- 229910006404 SnO 2 Inorganic materials 0.000 description 16
- 239000000460 chlorine Substances 0.000 description 16
- 239000003513 alkali Substances 0.000 description 15
- 239000011734 sodium Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 7
- 150000001342 alkaline earth metals Chemical class 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 6
- 229910052794 bromium Inorganic materials 0.000 description 6
- 238000003280 down draw process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000006060 molten glass Substances 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052787 antimony Inorganic materials 0.000 description 5
- 229910052792 caesium Inorganic materials 0.000 description 5
- 238000005352 clarification Methods 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 230000004927 fusion Effects 0.000 description 4
- 150000002500 ions Chemical group 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000003283 slot draw process Methods 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 3
- 239000005407 aluminoborosilicate glass Substances 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052701 rubidium Inorganic materials 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- 235000019738 Limestone Nutrition 0.000 description 2
- 238000006124 Pilkington process Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000004031 devitrification Methods 0.000 description 2
- 239000006025 fining agent Substances 0.000 description 2
- 239000006028 limestone Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052661 anorthite Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003258 bubble free glass Substances 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- GWWPLLOVYSCJIO-UHFFFAOYSA-N dialuminum;calcium;disilicate Chemical compound [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] GWWPLLOVYSCJIO-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000005400 gorilla glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- -1 lithium or sodium Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Glass Compositions (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
Description
60から65%までのSiO2、
8から12%までのAl2O3、
7から15%までのB2O3、
0を超え8%までのM2O、および
9から15%までのRO、
を含むガラスであって、Mはアルカリ金属であり、かつRはアルカリ土類金属であるガラスである。
60から65%までのSiO2、
8から12%までのAl2O3、
7から15%までのB2O3、
0を超え8%までのM2O、および
9から15%までのRO、
を含むガラスであり、ここで、Mはアルカリ金属であり、Rはアルカリ土類金属である。
61から64%までのSiO2、
8から12%までのAl2O3、
9から15%までのB2O3、
0を超え4%までのM2O、および
12から15%までのRO、
を含むガラスであり、ここで、Mはアルカリ金属であり、Rはアルカリ土類金属である。
60から65%までのSiO2、
8から10%未満までのAl2O3、
11を超え15%までのB2O3、
0を超え1%未満までのM2O、および
9から15%までのRO、
を含むガラスであり、ここで、Mはアルカリ金属であり、Rはアルカリ土類金属である。
60から65%までのSiO2、
10から12%までのAl2O3、
7から11%までのB2O3、
1から8%までのM2O、および
9から15%までのRO、
を含むガラスであり、ここで、Mはアルカリ金属であり、Rはアルカリ土類金属である。
62から65%までのSiO2、
10から12%までのAl2O3、
7から11%までのB2O3、
3から8%までのMgO、
3から10%までのCaO、
3から8%までのSrO、および
1から8%までのM2O、
を含み、ここでMは、K,Naおよびこれらの組合せから選ばれたアルカリ金属であり、その場合、CaO/(CaO+SrO)が0.4から1までである。
1.0≦(M2O+RO)/Al2O3≦2、かつ
0.4≦CaO/(CaO+SrO)≦1
上記比(M2O+RO)/Al2O3は、1.0よりも大きい方が、最初の溶融工程においてガラスから気泡を除去する助けとなる。これは、Al2O3の安定化には含まれないアルカリ金属酸化物およびアルカリ土類金属酸化物が、一般には市販の珪砂であるシリカ源を分解するのに有効であるために生じる。気泡の核生成および成長のための場所となるかも知れない表面領域がそれ故に早期に融解して除去され、比較的気泡の無いガラスが得られる。
0.02≦SnO2≦0.3、かつ
0.005≦Fe2O3≦0.08。
0.02≦SnO2≦0.3、かつ
0.005≦Fe2O3≦0.08
を含み、かつ0.05モル%未満のSb2O3,As2O3またはこれらの組合せを含む。
62から64%までのSiO2、
8から12%までのAl2O3、
9から15%までのB2O3、
0を超え4%までのM2O、および
12から〜15%までのRO、
ここで、Mはアルカリ金属であり、Rはアルカリ土類金属である。
14 導電性層
16 光起電性媒体
200 光起電性デバイス
Claims (8)
- モルパーセントで表して、
62から65%のSiO2、
10から12%までのAl2O3、
7から11%までのB2O3、
3から4.58%までのMgO、
3から5.48%のCaO、
3から3.74%のSrO、および
1から8%のM2O、
を含み、Mが、K,Na,およびそれらの組合せから選ばれるアルカリ金属であり、200ポアズ(20パスカル秒)の粘度となる温度が1486.11〜1555.78℃であり、熱膨張係数が41.6〜59.6(×10 −7 /℃)であることを特徴とするガラス。 - スロット・ドロー、またはフュージョン・ドローがなされたガラスであることを特徴とする請求項1記載のガラス。
- シート形状であることを特徴とする請求項1記載のガラス。
- 請求項3記載のガラスを備えてなる有機発光ダイオード・デバイス。
- 請求項3記載のガラスを備えてなる光起電性デバイス。
- 前記ガラスに近接した能動的光起電性媒体をさらに備えてなる請求項5記載の光起電性デバイス。
- 前記能動的光起電性媒体が、テルル化カドミウム、二セレン化銅インジウム・ガリウム、非晶質シリコン、結晶シリコン、微結晶シリコン、またはそれらの組合せを含むことを特徴とする請求項6記載の光起電性デバイス。
- 50,000ポアズ(5,000パスカル秒)以上の液相線粘度を有することを特徴とする請求項1記載のガラス。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10312608P | 2008-10-06 | 2008-10-06 | |
US61/103,126 | 2008-10-06 | ||
US17782709P | 2009-05-13 | 2009-05-13 | |
US61/177,827 | 2009-05-13 | ||
US12/573,213 | 2009-10-05 | ||
US12/573,213 US8445394B2 (en) | 2008-10-06 | 2009-10-05 | Intermediate thermal expansion coefficient glass |
PCT/US2009/059607 WO2010042460A2 (en) | 2008-10-06 | 2009-10-06 | Intermediate thermal expansion coefficient glass |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015032695A Division JP5883174B2 (ja) | 2008-10-06 | 2015-02-23 | 中間的な熱膨張係数を有するガラス |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012504548A JP2012504548A (ja) | 2012-02-23 |
JP2012504548A5 JP2012504548A5 (ja) | 2012-11-29 |
JP6042613B2 true JP6042613B2 (ja) | 2016-12-14 |
Family
ID=42074832
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011531105A Expired - Fee Related JP6042613B2 (ja) | 2008-10-06 | 2009-10-06 | 中間的な熱膨張係数を有するガラス |
JP2015032695A Active JP5883174B2 (ja) | 2008-10-06 | 2015-02-23 | 中間的な熱膨張係数を有するガラス |
JP2016019736A Expired - Fee Related JP6417531B2 (ja) | 2008-10-06 | 2016-02-04 | 中間的な熱膨張係数を有するガラス |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015032695A Active JP5883174B2 (ja) | 2008-10-06 | 2015-02-23 | 中間的な熱膨張係数を有するガラス |
JP2016019736A Expired - Fee Related JP6417531B2 (ja) | 2008-10-06 | 2016-02-04 | 中間的な熱膨張係数を有するガラス |
Country Status (11)
Country | Link |
---|---|
US (3) | US8445394B2 (ja) |
EP (1) | EP2349938B1 (ja) |
JP (3) | JP6042613B2 (ja) |
KR (3) | KR101647526B1 (ja) |
CN (2) | CN105271723A (ja) |
AU (1) | AU2009302561A1 (ja) |
CA (1) | CA2739098A1 (ja) |
MX (1) | MX2011003630A (ja) |
RU (1) | RU2011118352A (ja) |
TW (1) | TWI403482B (ja) |
WO (1) | WO2010042460A2 (ja) |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7593154B2 (en) * | 2005-10-11 | 2009-09-22 | Sage Electrochromics, Inc. | Electrochromic devices having improved ion conducting layers |
US8975199B2 (en) | 2011-08-12 | 2015-03-10 | Corsam Technologies Llc | Fusion formable alkali-free intermediate thermal expansion coefficient glass |
US8445394B2 (en) * | 2008-10-06 | 2013-05-21 | Corning Incorporated | Intermediate thermal expansion coefficient glass |
US9371247B2 (en) | 2009-05-29 | 2016-06-21 | Corsam Technologies Llc | Fusion formable sodium free glass |
FR2948356B1 (fr) * | 2009-07-22 | 2011-08-19 | Saint Gobain | Dispositif electrochrome |
JP5537144B2 (ja) * | 2009-12-16 | 2014-07-02 | AvanStrate株式会社 | ガラス組成物とそれを用いたフラットパネルディスプレイ用ガラス基板 |
US9302937B2 (en) | 2010-05-14 | 2016-04-05 | Corning Incorporated | Damage-resistant glass articles and method |
CN102971264B (zh) * | 2010-06-29 | 2018-05-15 | 康宁股份有限公司 | 利用溢流下拉熔合法通过共拉制制备的多层玻璃片 |
TWI537231B (zh) | 2010-07-12 | 2016-06-11 | 康寧公司 | 高靜態疲勞的氧化鋁隔離管 |
US10421681B2 (en) * | 2010-07-12 | 2019-09-24 | Corning Incorporated | Alumina isopipes for use with tin-containing glasses |
US9073773B2 (en) | 2011-03-11 | 2015-07-07 | Saint-Gobain Ceramics & Plastics, Inc. | Refractory object, glass overflow forming block, and process for glass object manufacture |
US8785336B2 (en) * | 2011-03-14 | 2014-07-22 | Nippon Electric Glass Co., Ltd. | Alkali-free glass |
CN108689591A (zh) | 2011-03-30 | 2018-10-23 | 圣戈本陶瓷及塑料股份有限公司 | 耐火物体、玻璃溢流形成块、以及形成和使用该耐火物体的方法 |
JP5762623B2 (ja) | 2011-04-13 | 2015-08-12 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | βアルミナを含む耐火物ならびにその製造および使用方法 |
US20120280373A1 (en) * | 2011-05-06 | 2012-11-08 | Jiangwei Feng | Active electronics on strengthened glass with alkali barrier |
WO2012160572A2 (en) * | 2011-05-11 | 2012-11-29 | Sterlite Technologies Ltd | Glass composition and glass substrate for display devices |
TWI572480B (zh) | 2011-07-25 | 2017-03-01 | 康寧公司 | 經層壓及離子交換之強化玻璃疊層 |
TWI691097B (zh) * | 2011-08-04 | 2020-04-11 | 康寧公司 | 光伏模組 |
EP3633740A1 (en) * | 2011-08-04 | 2020-04-08 | Corning Incorporated | Photovoltaic module package |
US9321669B2 (en) * | 2011-08-23 | 2016-04-26 | Corning Incorporated | Thin glass sheet with tunable coefficient of thermal expansion |
WO2013028969A1 (en) * | 2011-08-24 | 2013-02-28 | Corning Incorporated | Photovoltaic assembly comprising an array of load compensating pv modules |
US20140242391A1 (en) * | 2011-09-22 | 2014-08-28 | Asahi Glass Company, Limited | Glass plate to be tempered |
JP2015504841A (ja) | 2012-01-11 | 2015-02-16 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 耐火物及び耐火物を使用したガラス板の形成方法 |
IN2014DN07444A (ja) | 2012-02-29 | 2015-04-24 | Corning Inc | |
TWI564262B (zh) | 2012-02-29 | 2017-01-01 | 康寧公司 | 高cte之硼矽酸鉀核心玻璃與包含其之玻璃物件 |
US11352287B2 (en) | 2012-11-28 | 2022-06-07 | Vitro Flat Glass Llc | High strain point glass |
US20140238481A1 (en) * | 2013-02-28 | 2014-08-28 | Corning Incorporated | Sodium out-flux for photovoltaic cigs glasses |
KR102225583B1 (ko) | 2013-04-29 | 2021-03-10 | 코닝 인코포레이티드 | 광기전력 모듈 패키지 |
US9359244B2 (en) | 2013-05-21 | 2016-06-07 | Colorado School Of Mines | Alumina-rich glasses and methods for making the same |
US20140356406A1 (en) * | 2013-05-31 | 2014-12-04 | Corning Incorporated | Antimicrobial Articles and Methods of Making and Using Same |
KR102311016B1 (ko) * | 2013-06-14 | 2021-10-12 | 코닝 인코포레이티드 | 내 스크래치성 표면을 갖는 적층 유리 제품 |
WO2015023561A2 (en) | 2013-08-15 | 2015-02-19 | Corning Incorporated | Intermediate to high cte glasses and glass articles comprising the same |
WO2015023525A1 (en) | 2013-08-15 | 2015-02-19 | Corning Incorporated | Alkali-doped and alkali-free boroaluminosilicate glass |
US20160356942A1 (en) * | 2013-08-23 | 2016-12-08 | Corning Incorporated | Light emitting diode light panels |
US9714188B2 (en) | 2013-09-13 | 2017-07-25 | Corning Incorporated | Ion exchangeable glasses with high crack initiation threshold |
US9452946B2 (en) | 2013-10-18 | 2016-09-27 | Corning Incorporated | Locally-sintered porous soot parts and methods of forming |
JP6976057B2 (ja) * | 2013-11-20 | 2021-12-01 | コーニング インコーポレイテッド | 耐スクラッチアルミノホウケイ酸ガラス |
EP3116834B1 (en) * | 2014-03-13 | 2021-06-02 | Corning Incorporated | Glass article and method for forming the same |
KR102331876B1 (ko) * | 2014-07-10 | 2021-11-29 | 코닝 인코포레이티드 | 냉간 성형된 유리 아플리케 |
US11097974B2 (en) | 2014-07-31 | 2021-08-24 | Corning Incorporated | Thermally strengthened consumer electronic glass and related systems and methods |
WO2016024962A1 (en) * | 2014-08-13 | 2016-02-18 | Corning Incorporated | Intermediate cte glasses and glass articles comprising the same |
CN115504681A (zh) | 2014-10-07 | 2022-12-23 | 康宁股份有限公司 | 具有确定的应力分布的玻璃制品及其生产方法 |
EP3262011A4 (en) | 2015-02-24 | 2018-08-01 | Saint-Gobain Ceramics&Plastics, Inc. | Refractory article and method of making |
US11267747B2 (en) | 2015-03-24 | 2022-03-08 | Corning Incorporated | High strength, scratch resistant and transparent glass-based materials |
WO2016176171A1 (en) | 2015-04-28 | 2016-11-03 | Corning Incorporated | Method of laser drilling through holes in substrates using an exit sacrificial cover layer; corresponding workpiece |
WO2016196535A2 (en) * | 2015-06-02 | 2016-12-08 | Corning Incorporated | Laminate structures and automotive glazings comprising light guide plates |
RU2599265C1 (ru) * | 2015-09-21 | 2016-10-10 | Юлия Алексеевна Щепочкина | Стекло |
WO2017066243A1 (en) * | 2015-10-14 | 2017-04-20 | Corning Incorporated | Laminated glass article with determined stress profile and method for forming the same |
WO2017123573A2 (en) | 2016-01-12 | 2017-07-20 | Corning Incorporated | Thin thermally and chemically strengthened glass-based articles |
JP2019070675A (ja) * | 2016-03-02 | 2019-05-09 | Agc株式会社 | エレクトロクロミック調光素子用の積層基板、およびエレクトロクロミック調光素子の製造方法 |
CN109153596A (zh) * | 2016-05-25 | 2019-01-04 | Agc株式会社 | 无碱玻璃基板、层叠基板和玻璃基板的制造方法 |
CN108698909B (zh) | 2016-05-27 | 2022-07-12 | 康宁股份有限公司 | 耐破裂和耐划痕玻璃制品 |
US10410883B2 (en) | 2016-06-01 | 2019-09-10 | Corning Incorporated | Articles and methods of forming vias in substrates |
US10134657B2 (en) | 2016-06-29 | 2018-11-20 | Corning Incorporated | Inorganic wafer having through-holes attached to semiconductor wafer |
US10794679B2 (en) | 2016-06-29 | 2020-10-06 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
JP7145147B2 (ja) * | 2016-09-16 | 2022-09-30 | コーニング インコーポレイテッド | アルカリ土類酸化物を改質剤として含む高透過性ガラス |
RU2631716C1 (ru) * | 2016-09-23 | 2017-09-26 | Юлия Алексеевна Щепочкина | Стекло |
US10065880B2 (en) | 2016-11-07 | 2018-09-04 | Corning Incorporated | Lithium containing glasses |
US10968134B2 (en) * | 2016-11-07 | 2021-04-06 | Corning Incorporated | Low viscosity glasses and methods and systems for manufacture |
CN110198839A (zh) * | 2016-11-09 | 2019-09-03 | 康宁公司 | 具有减小的弓曲的可调光窗玻璃和包括所述可调光窗玻璃的中空玻璃单元 |
JP6983377B2 (ja) * | 2016-12-19 | 2021-12-17 | 日本電気硝子株式会社 | ガラス |
US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
US11078112B2 (en) | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
CN107298528B (zh) * | 2017-06-30 | 2019-08-30 | 东旭科技集团有限公司 | 铝硼硅酸盐玻璃及其制备方法和应用 |
US11485673B2 (en) | 2017-08-24 | 2022-11-01 | Corning Incorporated | Glasses with improved tempering capabilities |
KR102650926B1 (ko) | 2017-11-17 | 2024-03-27 | 인스티튜시오 카탈라나 드 르세르카 아이 에스투디스 아반카츠 | 직접 그래핀 전사 및 그래핀 기반 디바이스 |
TWI785156B (zh) | 2017-11-30 | 2022-12-01 | 美商康寧公司 | 具有高熱膨脹係數及對於熱回火之優先破裂行為的非離子交換玻璃 |
US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
JP2022504551A (ja) * | 2018-10-09 | 2022-01-13 | コーニング インコーポレイテッド | たるんだ歪み欠陥を防ぐための組成物および方法 |
JP7488260B2 (ja) | 2018-11-26 | 2024-05-21 | オウェンス コーニング インテレクチュアル キャピタル リミテッド ライアビリティ カンパニー | 改善された弾性率を有する高性能ガラス繊維組成物 |
EP3887328A2 (en) | 2018-11-26 | 2021-10-06 | Owens Corning Intellectual Capital, LLC | High performance fiberglass composition with improved specific modulus |
CN113727954A (zh) | 2019-04-23 | 2021-11-30 | 康宁股份有限公司 | 具有确定的应力分布曲线的玻璃层叠物及其制作方法 |
WO2021025981A1 (en) | 2019-08-06 | 2021-02-11 | Corning Incorporated | Glass laminate with buried stress spikes to arrest cracks and methods of making the same |
EP4396141A1 (en) * | 2021-08-31 | 2024-07-10 | Corning Incorporated | Glass compositions and glass laminate articles comprising the same |
CN113929107B (zh) * | 2021-10-18 | 2022-05-03 | 北京科技大学 | 一种超重力固化赤泥中钠元素的方法及设备 |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4536607A (en) * | 1984-03-01 | 1985-08-20 | Wiesmann Harold J | Photovoltaic tandem cell |
JP2800176B2 (ja) | 1987-08-18 | 1998-09-21 | 旭硝子株式会社 | ガラスセラミックス組成物 |
JP2743333B2 (ja) | 1989-10-31 | 1998-04-22 | 日本電気硝子株式会社 | 基板用ガラス |
GB9108257D0 (en) * | 1991-04-17 | 1991-06-05 | Cookson Group Plc | Glaze compositions |
JP2574556B2 (ja) * | 1991-05-29 | 1997-01-22 | クツクソン・グループ・ピーエルシー | 釉薬組成物及び施釉方法 |
US5374595A (en) * | 1993-01-22 | 1994-12-20 | Corning Incorporated | High liquidus viscosity glasses for flat panel displays |
JPH07172863A (ja) * | 1993-10-27 | 1995-07-11 | Central Glass Co Ltd | 耐火性板ガラス |
US5631195A (en) * | 1994-09-14 | 1997-05-20 | Asahi Glass Company Ltd. | Glass composition and substrate for plasma display |
JP2967742B2 (ja) * | 1995-12-27 | 1999-10-25 | 株式会社ノリタケカンパニーリミテド | 電子レンジで使用可能な貴金属による表面装飾器物及びその製造方法 |
JPH10152339A (ja) * | 1996-09-27 | 1998-06-09 | Nippon Sheet Glass Co Ltd | 耐熱性ガラス組成物 |
US6137048A (en) * | 1996-11-07 | 2000-10-24 | Midwest Research Institute | Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby |
US6060168A (en) | 1996-12-17 | 2000-05-09 | Corning Incorporated | Glasses for display panels and photovoltaic devices |
FR2758550B1 (fr) | 1997-01-17 | 1999-02-12 | Saint Gobain Vitrage | Compositions de verre silico-sodo-calcique et leurs applications |
JPH11135819A (ja) | 1997-10-31 | 1999-05-21 | Matsushita Electric Ind Co Ltd | 化合物薄膜太陽電池 |
JPH11180728A (ja) | 1997-12-22 | 1999-07-06 | Central Glass Co Ltd | ディスプレイ装置用基板ガラス組成物 |
JPH11180727A (ja) | 1997-12-22 | 1999-07-06 | Central Glass Co Ltd | 表示装置用基板ガラス組成物 |
JP4320823B2 (ja) | 1998-02-27 | 2009-08-26 | 旭硝子株式会社 | 基板用ガラス組成物 |
US6313052B1 (en) | 1998-02-27 | 2001-11-06 | Asahi Glass Company Ltd. | Glass for a substrate |
JPH11310433A (ja) | 1998-04-27 | 1999-11-09 | Central Glass Co Ltd | 表示装置用基板ガラス |
EP0953549B1 (en) * | 1998-04-28 | 2002-09-11 | Asahi Glass Company Ltd. | Plate glass and substrate glass for electronics |
JPH11335133A (ja) | 1998-05-27 | 1999-12-07 | Central Glass Co Ltd | 表示装置用基板ガラス |
US6319867B1 (en) * | 1998-11-30 | 2001-11-20 | Corning Incorporated | Glasses for flat panel displays |
US6207603B1 (en) * | 1999-02-05 | 2001-03-27 | Corning Incorporated | Solar cell cover glass |
JP3056200B1 (ja) * | 1999-02-26 | 2000-06-26 | 鐘淵化学工業株式会社 | 薄膜光電変換装置の製造方法 |
DE19934072C2 (de) * | 1999-07-23 | 2001-06-13 | Schott Glas | Alkalifreies Aluminoborosilicatglas, seine Verwendungen und Verfahren zu seiner Herstellung |
DE19939789A1 (de) * | 1999-08-21 | 2001-02-22 | Schott Glas | Alkalifreie Aluminoborosilicatgläser und deren Verwendungen |
DE19942259C1 (de) * | 1999-09-04 | 2001-05-17 | Schott Glas | Erdalkalialuminoborosilicatglas und dessen Verwendungen |
DE10000836B4 (de) * | 2000-01-12 | 2005-03-17 | Schott Ag | Alkalifreies Aluminoborosilicatglas und dessen Verwendungen |
DE10005088C1 (de) * | 2000-02-04 | 2001-03-15 | Schott Glas | Alkalihaltiges Aluminoborosilicatglas und seine Verwendung |
WO2001078154A2 (en) * | 2000-04-10 | 2001-10-18 | Davis, Joseph & Negley | Preparation of cigs-based solar cells using a buffered electrodeposition bath |
JP2002025762A (ja) | 2000-07-04 | 2002-01-25 | Nippon Electric Glass Co Ltd | 無機elディスプレイガラス基板 |
JP2002053340A (ja) | 2000-08-09 | 2002-02-19 | Nippon Electric Glass Co Ltd | 無機elディスプレイガラス基板 |
DE10064804C2 (de) * | 2000-12-22 | 2003-03-20 | Schott Glas | Alkalifreie Aluminoborosilicatgläser und ihre Verwendung |
JP3995902B2 (ja) * | 2001-05-31 | 2007-10-24 | Hoya株式会社 | 情報記録媒体用ガラス基板及びそれを用いた磁気情報記録媒体 |
US6753279B2 (en) * | 2001-10-30 | 2004-06-22 | Corning Incorporated | Glass composition for display panels |
JP2003261352A (ja) | 2002-03-08 | 2003-09-16 | Asahi Techno Glass Corp | ディスプレイ用ガラスおよびディスプレイ用ガラス部品 |
US6992030B2 (en) * | 2002-08-29 | 2006-01-31 | Corning Incorporated | Low-density glass for flat panel display substrates |
JP4320772B2 (ja) | 2003-02-13 | 2009-08-26 | 日本電気硝子株式会社 | フラットパネルディスプレイ装置用ガラス基板 |
JP4378152B2 (ja) | 2003-11-07 | 2009-12-02 | 岡本硝子株式会社 | 耐熱性ガラス |
DE102004026433A1 (de) * | 2004-05-29 | 2005-12-22 | Schott Ag | Nanoglaspulver und deren Verwendung |
DE102004033653B4 (de) * | 2004-07-12 | 2013-09-19 | Schott Ag | Verwendung eines Glases für EEFL Fluoreszenzlampen |
EP1782474B1 (en) * | 2004-08-18 | 2013-11-27 | Corning Incorporated | High strain glass/glass-ceramic containing semiconductor-on-insulator structures |
CN1268567C (zh) * | 2005-02-06 | 2006-08-09 | 河南安彩高科股份有限公司 | 一种无碱金属的玻璃组合物及其制法和应用 |
JP4977965B2 (ja) | 2005-05-02 | 2012-07-18 | 旭硝子株式会社 | 無アルカリガラスおよびその製造方法 |
WO2007020824A1 (ja) * | 2005-08-15 | 2007-02-22 | Nippon Sheet Glass Company, Limited | ガラス組成物およびガラス組成物の製造方法 |
CN102249541B (zh) | 2005-08-15 | 2013-03-27 | 安瀚视特股份有限公司 | 玻璃组成物 |
FR2891269B1 (fr) * | 2005-09-23 | 2007-11-09 | Saint Gobain | Substrat transparent muni d'une electrode |
US8389852B2 (en) * | 2006-02-22 | 2013-03-05 | Guardian Industries Corp. | Electrode structure for use in electronic device and method of making same |
US7235736B1 (en) * | 2006-03-18 | 2007-06-26 | Solyndra, Inc. | Monolithic integration of cylindrical solar cells |
JP2007256764A (ja) | 2006-03-24 | 2007-10-04 | Okamoto Glass Co Ltd | 紫外線吸収反射鏡基板及びこれを用いた反射鏡 |
JP2007284307A (ja) * | 2006-04-19 | 2007-11-01 | Central Glass Co Ltd | ディスプレイ装置用基板ガラス |
WO2007138986A1 (ja) * | 2006-05-25 | 2007-12-06 | Nippon Electric Glass Co., Ltd. | 強化ガラス及びその製造方法 |
US8063886B2 (en) | 2006-07-18 | 2011-11-22 | Iee International Electronics & Engineering S.A. | Data input device |
DE102006042620B4 (de) | 2006-09-04 | 2012-01-26 | Schott Ag | Verwendung eines Aluminoborosilikatglases als Substratglas |
JP5071878B2 (ja) | 2006-09-12 | 2012-11-14 | 日本電気硝子株式会社 | 無アルカリガラスおよびこれを用いた無アルカリガラス基板 |
JP5589252B2 (ja) | 2006-10-10 | 2014-09-17 | 日本電気硝子株式会社 | 強化ガラス基板 |
EP2075237B1 (en) | 2006-10-10 | 2019-02-27 | Nippon Electric Glass Co., Ltd. | Reinforced glass substrate |
US20080130171A1 (en) * | 2006-11-30 | 2008-06-05 | Francis Martin Behan | Calcium aluminosilicate glasses for use as information recording medium substrates |
US20080128020A1 (en) * | 2006-11-30 | 2008-06-05 | First Solar, Inc. | Photovoltaic devices including a metal stack |
JP5808069B2 (ja) * | 2007-02-16 | 2015-11-10 | 日本電気硝子株式会社 | 太陽電池用ガラス基板 |
JP5483821B2 (ja) * | 2007-02-27 | 2014-05-07 | AvanStrate株式会社 | 表示装置用ガラス基板および表示装置 |
JP2008280189A (ja) | 2007-05-08 | 2008-11-20 | Nippon Electric Glass Co Ltd | 太陽電池用ガラス基板およびその製造方法 |
US7666511B2 (en) * | 2007-05-18 | 2010-02-23 | Corning Incorporated | Down-drawable, chemically strengthened glass for cover plate |
CN101117270B (zh) * | 2007-06-07 | 2016-03-02 | 河南安彩高科股份有限公司 | 高弹性模量的铝硼硅酸盐玻璃及其应用 |
JP5435394B2 (ja) * | 2007-06-08 | 2014-03-05 | 日本電気硝子株式会社 | 強化ガラス基板及びその製造方法 |
JP5234387B2 (ja) | 2007-06-12 | 2013-07-10 | 日本電気硝子株式会社 | 無アルカリガラスおよび無アルカリガラス基板並びにその製造方法 |
US20080308146A1 (en) * | 2007-06-14 | 2008-12-18 | Guardian Industries Corp. | Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same |
JP5292029B2 (ja) * | 2008-09-10 | 2013-09-18 | 株式会社オハラ | ガラス |
US8445394B2 (en) * | 2008-10-06 | 2013-05-21 | Corning Incorporated | Intermediate thermal expansion coefficient glass |
US8975199B2 (en) * | 2011-08-12 | 2015-03-10 | Corsam Technologies Llc | Fusion formable alkali-free intermediate thermal expansion coefficient glass |
DE102009050987B3 (de) * | 2009-05-12 | 2010-10-07 | Schott Ag | Dünnschichtsolarzelle und Verfahren zur Herstellung einer Dünnschichtsolarzelle |
DE102009050988B3 (de) * | 2009-05-12 | 2010-11-04 | Schott Ag | Dünnschichtsolarzelle |
-
2009
- 2009-10-05 US US12/573,213 patent/US8445394B2/en active Active
- 2009-10-06 RU RU2011118352/03A patent/RU2011118352A/ru unknown
- 2009-10-06 EP EP09793309.7A patent/EP2349938B1/en not_active Not-in-force
- 2009-10-06 WO PCT/US2009/059607 patent/WO2010042460A2/en active Application Filing
- 2009-10-06 KR KR1020117010301A patent/KR101647526B1/ko active IP Right Grant
- 2009-10-06 CA CA2739098A patent/CA2739098A1/en not_active Abandoned
- 2009-10-06 KR KR1020167021282A patent/KR20160097385A/ko active Application Filing
- 2009-10-06 CN CN201510765082.3A patent/CN105271723A/zh active Pending
- 2009-10-06 MX MX2011003630A patent/MX2011003630A/es unknown
- 2009-10-06 AU AU2009302561A patent/AU2009302561A1/en not_active Abandoned
- 2009-10-06 KR KR1020177030788A patent/KR101891459B1/ko active IP Right Grant
- 2009-10-06 CN CN2009801404052A patent/CN102171154A/zh active Pending
- 2009-10-06 JP JP2011531105A patent/JP6042613B2/ja not_active Expired - Fee Related
- 2009-10-06 TW TW098133915A patent/TWI403482B/zh not_active IP Right Cessation
-
2013
- 2013-05-09 US US13/890,638 patent/US9266769B2/en active Active
-
2015
- 2015-02-23 JP JP2015032695A patent/JP5883174B2/ja active Active
-
2016
- 2016-02-02 US US15/013,417 patent/US10196297B2/en active Active
- 2016-02-04 JP JP2016019736A patent/JP6417531B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2016084280A (ja) | 2016-05-19 |
KR20160097385A (ko) | 2016-08-17 |
WO2010042460A3 (en) | 2010-06-03 |
WO2010042460A2 (en) | 2010-04-15 |
RU2011118352A (ru) | 2012-11-20 |
JP5883174B2 (ja) | 2016-03-09 |
KR20170121338A (ko) | 2017-11-01 |
CN102171154A (zh) | 2011-08-31 |
MX2011003630A (es) | 2011-05-31 |
JP2012504548A (ja) | 2012-02-23 |
KR101647526B1 (ko) | 2016-08-10 |
US20130255779A1 (en) | 2013-10-03 |
EP2349938B1 (en) | 2018-02-21 |
CA2739098A1 (en) | 2010-04-15 |
AU2009302561A1 (en) | 2010-04-15 |
JP2015164893A (ja) | 2015-09-17 |
US9266769B2 (en) | 2016-02-23 |
JP6417531B2 (ja) | 2018-11-07 |
KR20110066225A (ko) | 2011-06-16 |
US20160145146A1 (en) | 2016-05-26 |
US10196297B2 (en) | 2019-02-05 |
US8445394B2 (en) | 2013-05-21 |
TWI403482B (zh) | 2013-08-01 |
TW201022174A (en) | 2010-06-16 |
EP2349938A2 (en) | 2011-08-03 |
KR101891459B1 (ko) | 2018-08-23 |
CN105271723A (zh) | 2016-01-27 |
US20100084016A1 (en) | 2010-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6417531B2 (ja) | 中間的な熱膨張係数を有するガラス | |
JP6362636B2 (ja) | フュージョン成形可能なナトリウム不含有ガラス | |
JP6193280B2 (ja) | フュージョン成形可能なシリカおよびナトリウム含有ガラス | |
JP2019006677A (ja) | フュージョン成形可能なナトリウム含有ガラス | |
KR101790478B1 (ko) | 고변형점 알루미노실리케이트 유리 | |
JP2022539144A (ja) | 熱履歴の影響を受けにくい無アルカリガラス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121009 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121009 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20130731 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130731 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130830 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130910 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131210 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140310 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141021 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160629 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160729 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160829 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161110 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6042613 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |