JP6039616B2 - グラフェンの下地膜の生成方法、グラフェンの生成方法及びグラフェンの下地膜生成装置 - Google Patents
グラフェンの下地膜の生成方法、グラフェンの生成方法及びグラフェンの下地膜生成装置 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 105
- 229910021389 graphene Inorganic materials 0.000 title claims description 102
- 238000000034 method Methods 0.000 title claims description 66
- 238000010438 heat treatment Methods 0.000 claims description 116
- 239000007789 gas Substances 0.000 claims description 68
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 61
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 49
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 150000002902 organometallic compounds Chemical class 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 400
- 229910052759 nickel Inorganic materials 0.000 description 205
- 239000010408 film Substances 0.000 description 162
- 239000010409 thin film Substances 0.000 description 75
- 235000012431 wafers Nutrition 0.000 description 73
- 238000000137 annealing Methods 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 17
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 15
- 239000002245 particle Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000006837 decompression Effects 0.000 description 10
- -1 for example Substances 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- 238000001237 Raman spectrum Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 150000002815 nickel Chemical class 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 229940059260 amidate Drugs 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NPUKDXXFDDZOKR-LLVKDONJSA-N etomidate Chemical compound CCOC(=O)C1=CN=CN1[C@H](C)C1=CC=CC=C1 NPUKDXXFDDZOKR-LLVKDONJSA-N 0.000 description 2
- 229910021392 nanocarbon Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
10 基板処理システム
13 下地膜形成モジュール
14 第1の熱処理モジュール
15 第2の熱処理モジュール
16 グラフェン生成モジュール
50 ニッケル膜
50a 第1のニッケル薄膜
50b 第2のニッケル薄膜
50c 第3のニッケル薄膜
Claims (12)
- 水素ガス及びアンモニアガスを用いる有機金属化合物のCVDによって基板上にグラフェンの下地膜としての金属膜を形成するCVDステップと、
前記形成された金属膜に含まれる不純物がガスとして脱離する温度まで前記基板を加熱する第1の加熱ステップと、
前記金属膜において金属の結晶粒が成長する温度まで前記基板を加熱する第2の加熱ステップとを有し、
前記CVDステップ、前記第1の加熱ステップ及び前記第2の加熱ステップをこの順で繰り返して実行し、
前記第2の加熱ステップにおける前記基板の温度は、前記第1の加熱ステップにおける前記基板の温度よりも高く、
前記第1の加熱ステップ及び前記第2の加熱ステップは大気圧よりも減圧された環境で実行されることを特徴とするグラフェンの下地膜の生成方法。 - 前記第1の加熱ステップ及び前記第2の加熱ステップは、前記CVDステップが実行される環境よりも減圧された環境で実行されることを特徴とする請求項1記載のグラフェンの下地膜の生成方法。
- 前記CVDステップが繰り返される際、前記水素ガスの量に対する前記アンモニアガスの量の比を変化させることを特徴とする請求項2記載のグラフェンの下地膜の生成方法。
- 前記CVDステップが繰り返される際、前記水素ガスの量に対する前記アンモニアガスの量の比を増加させることを特徴とする請求項3記載のグラフェンの下地膜の生成方法。
- 基板上にグラフェンの下地膜としての金属膜を形成する金属膜形成ステップと、
前記金属膜上に前記グラフェンを生成するグラフェン生成ステップとを備え、
前記金属膜形成ステップは、
水素ガス及びアンモニアガスを用いる有機金属化合物のCVDによって前記基板上に前記金属膜を形成するCVDステップと、
前記形成された金属膜に含まれる不純物がガスとして脱離する温度まで前記基板を加熱する第1の加熱ステップと、
前記金属膜において金属の結晶粒が成長する温度まで前記基板を加熱する第2の加熱ステップとを有し、
前記CVDステップ、前記第1の加熱ステップ及び前記第2の加熱ステップをこの順で繰り返して実行し、
前記第2の加熱ステップにおける前記基板の温度は、前記第1の加熱ステップにおける前記基板の温度よりも高く、
前記第1の加熱ステップ及び前記第2の加熱ステップは大気圧よりも減圧された環境で実行されることを特徴とするグラフェンの生成方法。 - 前記第1の加熱ステップ及び前記第2の加熱ステップは、前記CVDステップが実行される環境よりも減圧された環境で実行されることを特徴とすることを特徴とする請求項5記載のグラフェンの生成方法。
- 前記金属膜形成ステップにおいて前記CVDステップが繰り返される際、前記水素ガスの量に対する前記アンモニアガスの量の比を変化させることを特徴とする請求項6記載のグラフェンの生成方法。
- 前記金属膜形成ステップにおいて前記CVDステップが繰り返される際、前記水素ガスの量に対する前記アンモニアガスの量の比を増加させることを特徴とする請求項7記載のグラフェンの生成方法。
- 水素ガス及びアンモニアガスを用いる有機金属化合物のCVDによって基板上にグラフェンの下地膜としての金属膜を形成するCVDモジュールと、
前記形成された金属膜に含まれる不純物がガスとして脱離する温度まで前記基板を加熱する第1の加熱モジュールと、
前記金属膜において金属の結晶粒が成長する温度まで前記基板を加熱する第2の加熱モジュールとを備え、
前記基板が、前記CVDモジュール、前記第1の加熱モジュール及び前記第2の加熱モジュールをこの順で循環し、前記基板の循環が繰り返され、
前記第2の加熱モジュールにおいて加熱される前記基板の温度は、前記第1の加熱モジュールにおいて加熱される前記基板の温度よりも高く、
前記第1の加熱モジュールの内部及び前記第2の加熱モジュールの内部は大気圧よりも減圧されることを特徴とするグラフェンの下地膜生成装置。 - 前記第1の加熱モジュールの内部及び前記第2の加熱モジュールの内部は、前記CVDモジュールの内部よりも減圧されることを特徴とすることを特徴とする請求項9記載のグラフェンの下地膜生成装置。
- 前記CVDモジュールにおいて前記金属膜の形成が繰り返される際、前記水素ガスの量に対する前記アンモニアガスの量の比を変化させることを特徴とする請求項10記載のグラフェンの下地膜生成装置。
- 前記CVDモジュールにおいて前記金属膜の形成が繰り返される際、前記水素ガスの量に対する前記アンモニアガスの量の比を増加させることを特徴とする請求項11記載のグラフェンの下地膜生成装置。
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