FR2937343B1 - Procede de croissance controlee de film de graphene - Google Patents
Procede de croissance controlee de film de grapheneInfo
- Publication number
- FR2937343B1 FR2937343B1 FR0805769A FR0805769A FR2937343B1 FR 2937343 B1 FR2937343 B1 FR 2937343B1 FR 0805769 A FR0805769 A FR 0805769A FR 0805769 A FR0805769 A FR 0805769A FR 2937343 B1 FR2937343 B1 FR 2937343B1
- Authority
- FR
- France
- Prior art keywords
- graphene film
- controlled growth
- growth
- controlled
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0805769A FR2937343B1 (fr) | 2008-10-17 | 2008-10-17 | Procede de croissance controlee de film de graphene |
KR1020117011250A KR101626181B1 (ko) | 2008-10-17 | 2009-10-16 | 그라핀 필름의 제어된 성장 방법 |
US13/124,413 US9206509B2 (en) | 2008-10-17 | 2009-10-16 | Method for the controlled growth of a graphene film |
JP2011531510A JP5816981B2 (ja) | 2008-10-17 | 2009-10-16 | グラフェン膜成長の制御方法 |
EP09736945A EP2334839A2 (fr) | 2008-10-17 | 2009-10-16 | Procede de croissance controlee de film de graphene |
PCT/EP2009/063617 WO2010043716A2 (fr) | 2008-10-17 | 2009-10-16 | Procede de croissance controlee de film de graphene |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0805769A FR2937343B1 (fr) | 2008-10-17 | 2008-10-17 | Procede de croissance controlee de film de graphene |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2937343A1 FR2937343A1 (fr) | 2010-04-23 |
FR2937343B1 true FR2937343B1 (fr) | 2011-09-02 |
Family
ID=40718812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0805769A Active FR2937343B1 (fr) | 2008-10-17 | 2008-10-17 | Procede de croissance controlee de film de graphene |
Country Status (6)
Country | Link |
---|---|
US (1) | US9206509B2 (fr) |
EP (1) | EP2334839A2 (fr) |
JP (1) | JP5816981B2 (fr) |
KR (1) | KR101626181B1 (fr) |
FR (1) | FR2937343B1 (fr) |
WO (1) | WO2010043716A2 (fr) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100323113A1 (en) * | 2009-06-18 | 2010-12-23 | Ramappa Deepak A | Method to Synthesize Graphene |
KR101132706B1 (ko) * | 2010-02-01 | 2012-04-06 | 한국과학기술원 | 그래핀 층 형성 방법 |
WO2011105530A1 (fr) * | 2010-02-26 | 2011-09-01 | 独立行政法人産業技術総合研究所 | Stratifié de film de carbone |
KR101251020B1 (ko) * | 2010-03-09 | 2013-04-03 | 국립대학법인 울산과학기술대학교 산학협력단 | 그라펜의 제조 방법, 이를 포함하는 투명 전극, 활성층, 이를 구비한 표시소자, 전자소자, 광전소자, 태양전지 및 염료감응 태양전지 |
KR101403989B1 (ko) * | 2010-11-09 | 2014-06-10 | 포항공과대학교 산학협력단 | 그래핀 피복 강판 및 이의 제조 방법 |
JP2012144415A (ja) * | 2010-12-21 | 2012-08-02 | Meijo Univ | グラフェン素材の製造方法及びグラフェン素材 |
US8772181B2 (en) | 2011-02-28 | 2014-07-08 | Japan Science And Technology Agency | Method for producing graphene, graphene produced on substrate, and graphene on substrate |
JP5666984B2 (ja) * | 2011-05-12 | 2015-02-12 | 日本電信電話株式会社 | 炭素薄膜の作製方法 |
EP2541559B1 (fr) * | 2011-06-30 | 2014-03-26 | Rohm and Haas Electronic Materials LLC | Article transparent conducteur |
WO2013010060A1 (fr) * | 2011-07-14 | 2013-01-17 | University Of North Texas | Croissance directe du graphène par épitaxie par jets moléculaires pour la formation d'hétérostructures de graphène |
US8828193B2 (en) * | 2011-09-06 | 2014-09-09 | Indian Institute Of Technology Madras | Production of graphene using electromagnetic radiation |
EP2584067A1 (fr) * | 2011-10-20 | 2013-04-24 | Siemens Aktiengesellschaft | Composant avec graphène et procédé de fabrication de composants avec graphène |
FR2982853B1 (fr) * | 2011-11-22 | 2018-01-12 | Ecole Polytechnique | Procede de fabrication de film de graphene |
JP6052537B2 (ja) * | 2011-12-01 | 2016-12-27 | 国立大学法人東北大学 | グラフェン構造体及びそれを用いた半導体装置並びにそれらの製造方法 |
CN102433544B (zh) * | 2012-01-11 | 2013-07-10 | 中国科学院上海微系统与信息技术研究所 | 一种利用多苯环碳源低温化学气相沉积生长大面积石墨烯的方法 |
CN102633258A (zh) * | 2012-05-10 | 2012-08-15 | 中国科学院上海微系统与信息技术研究所 | 一种无需衬底转移的制备石墨烯的方法 |
PL224447B1 (pl) * | 2012-08-25 | 2016-12-30 | Advanced Graphene Products Spółka Z Ograniczoną Odpowiedzialnością | Sposób oddzielania grafenu od ciekłej matrycy formującej |
CN102903618B (zh) * | 2012-10-22 | 2015-07-29 | 西安电子科技大学 | 基于AlN衬底的石墨烯CVD直接外延生长方法及制造的器件 |
CN102903617B (zh) * | 2012-10-22 | 2015-09-09 | 西安电子科技大学 | 基于GaN衬底的石墨烯CVD直接外延生长方法及制造的器件 |
US9593019B2 (en) | 2013-03-15 | 2017-03-14 | Guardian Industries Corp. | Methods for low-temperature graphene precipitation onto glass, and associated articles/devices |
US10431354B2 (en) * | 2013-03-15 | 2019-10-01 | Guardian Glass, LLC | Methods for direct production of graphene on dielectric substrates, and associated articles/devices |
WO2015077751A1 (fr) * | 2013-11-25 | 2015-05-28 | Northeastern University | Membranes ultraminces auto-portées et leur fabrication sans transfert |
GB201409895D0 (en) * | 2014-06-04 | 2014-07-16 | Cambridge Entpr Ltd | Method for producing synthetic diamonds |
GB201410214D0 (en) | 2014-06-09 | 2014-07-23 | Univ Surrey | A method for graphene and carbon nanotube growth |
JP6039616B2 (ja) * | 2014-08-11 | 2016-12-07 | 東京エレクトロン株式会社 | グラフェンの下地膜の生成方法、グラフェンの生成方法及びグラフェンの下地膜生成装置 |
CN104485310B (zh) * | 2014-12-25 | 2019-06-21 | 上海集成电路研发中心有限公司 | 一种形成石墨烯互连线的方法 |
KR101723728B1 (ko) * | 2015-03-31 | 2017-04-07 | 고려대학교 산학협력단 | 그래핀 박막의 제조 방법 |
US10145005B2 (en) | 2015-08-19 | 2018-12-04 | Guardian Glass, LLC | Techniques for low temperature direct graphene growth on glass |
CN106521618B (zh) * | 2016-11-07 | 2018-10-26 | 山东大学 | 一种在SiC衬底上通过点籽晶定位生长大尺寸单晶石墨烯的方法 |
CN106947956B (zh) * | 2017-03-17 | 2018-12-28 | 厦门大学 | 一种层数可控的石墨烯微纳结构快速制备装置 |
KR102149831B1 (ko) * | 2018-11-12 | 2020-09-01 | 한국과학기술연구원 | 그래핀 패턴의 합성 방법 및 이를 이용한 전광 모듈레이터의 제조 방법 |
CN111621768A (zh) * | 2020-06-02 | 2020-09-04 | 陕西科技大学 | 一种基于激光在金属表面原位生长石墨烯的方法及其应用 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100482241B1 (ko) * | 2000-02-25 | 2005-04-13 | 샤프 가부시키가이샤 | 카본 나노튜브 및 그 제조 방법, 전자원 및 그 제조 방법및 표시 장치 |
US20060233692A1 (en) * | 2004-04-26 | 2006-10-19 | Mainstream Engineering Corp. | Nanotube/metal substrate composites and methods for producing such composites |
JP5054896B2 (ja) * | 2005-03-28 | 2012-10-24 | 勝 堀 | カーボンナノウォールの処理方法、カーボンナノウォール、カーボンナノウォールデバイス |
JP4804272B2 (ja) * | 2006-08-26 | 2011-11-02 | 正義 梅野 | 単結晶グラファイト膜の製造方法 |
US7772059B2 (en) * | 2008-01-16 | 2010-08-10 | Texas Instruments Incorporated | Method for fabricating graphene transistors on a silicon or SOI substrate |
US8203195B2 (en) * | 2008-04-18 | 2012-06-19 | Invisage Technologies, Inc. | Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom |
CN101285175B (zh) * | 2008-05-29 | 2010-07-21 | 中国科学院化学研究所 | 化学气相沉积法制备石墨烯的方法 |
US20100218801A1 (en) * | 2008-07-08 | 2010-09-02 | Chien-Min Sung | Graphene and Hexagonal Boron Nitride Planes and Associated Methods |
JP5626948B2 (ja) * | 2008-10-08 | 2014-11-19 | 独立行政法人物質・材料研究機構 | グラフェン被覆部材の製造方法 |
WO2010096646A2 (fr) * | 2009-02-20 | 2010-08-26 | University Of Florida Research Foundation, Inc. | Traitement de graphène pour dispositif et applications de capteur |
US8309438B2 (en) * | 2009-03-03 | 2012-11-13 | Board Of Regents, The University Of Texas System | Synthesizing graphene from metal-carbon solutions using ion implantation |
US20100323113A1 (en) * | 2009-06-18 | 2010-12-23 | Ramappa Deepak A | Method to Synthesize Graphene |
JP5871213B2 (ja) * | 2010-12-21 | 2016-03-01 | 日本電気株式会社 | グラフェン基板の製造方法およびグラフェン基板 |
US8772181B2 (en) * | 2011-02-28 | 2014-07-08 | Japan Science And Technology Agency | Method for producing graphene, graphene produced on substrate, and graphene on substrate |
US8501531B2 (en) * | 2011-04-07 | 2013-08-06 | The United States Of America, As Represented By The Secretary Of The Navy | Method of forming graphene on a surface |
US10431354B2 (en) * | 2013-03-15 | 2019-10-01 | Guardian Glass, LLC | Methods for direct production of graphene on dielectric substrates, and associated articles/devices |
-
2008
- 2008-10-17 FR FR0805769A patent/FR2937343B1/fr active Active
-
2009
- 2009-10-16 US US13/124,413 patent/US9206509B2/en not_active Expired - Fee Related
- 2009-10-16 KR KR1020117011250A patent/KR101626181B1/ko not_active IP Right Cessation
- 2009-10-16 WO PCT/EP2009/063617 patent/WO2010043716A2/fr active Application Filing
- 2009-10-16 JP JP2011531510A patent/JP5816981B2/ja not_active Expired - Fee Related
- 2009-10-16 EP EP09736945A patent/EP2334839A2/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2010043716A2 (fr) | 2010-04-22 |
US9206509B2 (en) | 2015-12-08 |
EP2334839A2 (fr) | 2011-06-22 |
FR2937343A1 (fr) | 2010-04-23 |
JP5816981B2 (ja) | 2015-11-18 |
US20110198313A1 (en) | 2011-08-18 |
JP2012505816A (ja) | 2012-03-08 |
KR20110094178A (ko) | 2011-08-22 |
WO2010043716A3 (fr) | 2010-06-24 |
KR101626181B1 (ko) | 2016-05-31 |
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Legal Events
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