FR2937343B1 - Procede de croissance controlee de film de graphene - Google Patents

Procede de croissance controlee de film de graphene

Info

Publication number
FR2937343B1
FR2937343B1 FR0805769A FR0805769A FR2937343B1 FR 2937343 B1 FR2937343 B1 FR 2937343B1 FR 0805769 A FR0805769 A FR 0805769A FR 0805769 A FR0805769 A FR 0805769A FR 2937343 B1 FR2937343 B1 FR 2937343B1
Authority
FR
France
Prior art keywords
graphene film
controlled growth
growth
controlled
graphene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0805769A
Other languages
English (en)
Other versions
FR2937343A1 (fr
Inventor
Laurent Baraton
Costel Sorin Cojocaru
Didier Pribat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ecole Polytechnique
Original Assignee
Ecole Polytechnique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytechnique filed Critical Ecole Polytechnique
Priority to FR0805769A priority Critical patent/FR2937343B1/fr
Priority to PCT/EP2009/063617 priority patent/WO2010043716A2/fr
Priority to EP09736945A priority patent/EP2334839A2/fr
Priority to KR1020117011250A priority patent/KR101626181B1/ko
Priority to US13/124,413 priority patent/US9206509B2/en
Priority to JP2011531510A priority patent/JP5816981B2/ja
Publication of FR2937343A1 publication Critical patent/FR2937343A1/fr
Application granted granted Critical
Publication of FR2937343B1 publication Critical patent/FR2937343B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
FR0805769A 2008-10-17 2008-10-17 Procede de croissance controlee de film de graphene Active FR2937343B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0805769A FR2937343B1 (fr) 2008-10-17 2008-10-17 Procede de croissance controlee de film de graphene
PCT/EP2009/063617 WO2010043716A2 (fr) 2008-10-17 2009-10-16 Procede de croissance controlee de film de graphene
EP09736945A EP2334839A2 (fr) 2008-10-17 2009-10-16 Procede de croissance controlee de film de graphene
KR1020117011250A KR101626181B1 (ko) 2008-10-17 2009-10-16 그라핀 필름의 제어된 성장 방법
US13/124,413 US9206509B2 (en) 2008-10-17 2009-10-16 Method for the controlled growth of a graphene film
JP2011531510A JP5816981B2 (ja) 2008-10-17 2009-10-16 グラフェン膜成長の制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0805769A FR2937343B1 (fr) 2008-10-17 2008-10-17 Procede de croissance controlee de film de graphene

Publications (2)

Publication Number Publication Date
FR2937343A1 FR2937343A1 (fr) 2010-04-23
FR2937343B1 true FR2937343B1 (fr) 2011-09-02

Family

ID=40718812

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0805769A Active FR2937343B1 (fr) 2008-10-17 2008-10-17 Procede de croissance controlee de film de graphene

Country Status (6)

Country Link
US (1) US9206509B2 (fr)
EP (1) EP2334839A2 (fr)
JP (1) JP5816981B2 (fr)
KR (1) KR101626181B1 (fr)
FR (1) FR2937343B1 (fr)
WO (1) WO2010043716A2 (fr)

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US20100323113A1 (en) * 2009-06-18 2010-12-23 Ramappa Deepak A Method to Synthesize Graphene
KR101132706B1 (ko) * 2010-02-01 2012-04-06 한국과학기술원 그래핀 층 형성 방법
KR101472948B1 (ko) * 2010-02-26 2014-12-15 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 탄소막 적층체
KR101251020B1 (ko) * 2010-03-09 2013-04-03 국립대학법인 울산과학기술대학교 산학협력단 그라펜의 제조 방법, 이를 포함하는 투명 전극, 활성층, 이를 구비한 표시소자, 전자소자, 광전소자, 태양전지 및 염료감응 태양전지
KR101403989B1 (ko) * 2010-11-09 2014-06-10 포항공과대학교 산학협력단 그래핀 피복 강판 및 이의 제조 방법
JP2012144415A (ja) * 2010-12-21 2012-08-02 Meijo Univ グラフェン素材の製造方法及びグラフェン素材
JP5152945B2 (ja) * 2011-02-28 2013-02-27 独立行政法人科学技術振興機構 グラフェンの製造方法、基板上に製造されたグラフェン、ならびに、基板上グラフェン
JP5666984B2 (ja) * 2011-05-12 2015-02-12 日本電信電話株式会社 炭素薄膜の作製方法
EP2541559B1 (fr) * 2011-06-30 2014-03-26 Rohm and Haas Electronic Materials LLC Article transparent conducteur
US20140212671A1 (en) * 2011-07-14 2014-07-31 Jeffry Kelber Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation of Graphene Heterostructures
US8828193B2 (en) * 2011-09-06 2014-09-09 Indian Institute Of Technology Madras Production of graphene using electromagnetic radiation
EP2584067A1 (fr) * 2011-10-20 2013-04-24 Siemens Aktiengesellschaft Composant avec graphène et procédé de fabrication de composants avec graphène
FR2982853B1 (fr) * 2011-11-22 2018-01-12 Ecole Polytechnique Procede de fabrication de film de graphene
JP6052537B2 (ja) * 2011-12-01 2016-12-27 国立大学法人東北大学 グラフェン構造体及びそれを用いた半導体装置並びにそれらの製造方法
CN102433544B (zh) * 2012-01-11 2013-07-10 中国科学院上海微系统与信息技术研究所 一种利用多苯环碳源低温化学气相沉积生长大面积石墨烯的方法
CN102633258A (zh) * 2012-05-10 2012-08-15 中国科学院上海微系统与信息技术研究所 一种无需衬底转移的制备石墨烯的方法
PL224447B1 (pl) * 2012-08-25 2016-12-30 Advanced Graphene Products Spółka Z Ograniczoną Odpowiedzialnością Sposób oddzielania grafenu od ciekłej matrycy formującej
CN102903617B (zh) * 2012-10-22 2015-09-09 西安电子科技大学 基于GaN衬底的石墨烯CVD直接外延生长方法及制造的器件
CN102903618B (zh) * 2012-10-22 2015-07-29 西安电子科技大学 基于AlN衬底的石墨烯CVD直接外延生长方法及制造的器件
US9593019B2 (en) * 2013-03-15 2017-03-14 Guardian Industries Corp. Methods for low-temperature graphene precipitation onto glass, and associated articles/devices
US10431354B2 (en) * 2013-03-15 2019-10-01 Guardian Glass, LLC Methods for direct production of graphene on dielectric substrates, and associated articles/devices
GB201409895D0 (en) * 2014-06-04 2014-07-16 Cambridge Entpr Ltd Method for producing synthetic diamonds
GB201410214D0 (en) 2014-06-09 2014-07-23 Univ Surrey A method for graphene and carbon nanotube growth
JP6039616B2 (ja) * 2014-08-11 2016-12-07 東京エレクトロン株式会社 グラフェンの下地膜の生成方法、グラフェンの生成方法及びグラフェンの下地膜生成装置
CN104485310B (zh) * 2014-12-25 2019-06-21 上海集成电路研发中心有限公司 一种形成石墨烯互连线的方法
KR101723728B1 (ko) * 2015-03-31 2017-04-07 고려대학교 산학협력단 그래핀 박막의 제조 방법
US10145005B2 (en) 2015-08-19 2018-12-04 Guardian Glass, LLC Techniques for low temperature direct graphene growth on glass
CN106521618B (zh) * 2016-11-07 2018-10-26 山东大学 一种在SiC衬底上通过点籽晶定位生长大尺寸单晶石墨烯的方法
CN106947956B (zh) * 2017-03-17 2018-12-28 厦门大学 一种层数可控的石墨烯微纳结构快速制备装置
KR102149831B1 (ko) * 2018-11-12 2020-09-01 한국과학기술연구원 그래핀 패턴의 합성 방법 및 이를 이용한 전광 모듈레이터의 제조 방법
CN111621768A (zh) * 2020-06-02 2020-09-04 陕西科技大学 一种基于激光在金属表面原位生长石墨烯的方法及其应用

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US7772059B2 (en) * 2008-01-16 2010-08-10 Texas Instruments Incorporated Method for fabricating graphene transistors on a silicon or SOI substrate
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Also Published As

Publication number Publication date
WO2010043716A2 (fr) 2010-04-22
KR20110094178A (ko) 2011-08-22
FR2937343A1 (fr) 2010-04-23
JP2012505816A (ja) 2012-03-08
WO2010043716A3 (fr) 2010-06-24
EP2334839A2 (fr) 2011-06-22
US9206509B2 (en) 2015-12-08
JP5816981B2 (ja) 2015-11-18
US20110198313A1 (en) 2011-08-18
KR101626181B1 (ko) 2016-05-31

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