JP6027771B2 - 半導体装置、半導体装置の製造方法及び液体吐出装置 - Google Patents
半導体装置、半導体装置の製造方法及び液体吐出装置 Download PDFInfo
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Description
Claims (13)
- 第1導電型のウェル領域と、
前記第1導電型とは異なる第2導電型のソース領域及びドレイン領域を有し、前記ソース領域が前記ウェル領域に配置され、前記ドレイン領域が前記ウェル領域に隣接した前記第2導電型の半導体領域に配置されたトランジスタと、
前記ウェル領域において前記ソース領域の周囲に配置されたLOCOS領域と、
前記LOCOS領域の下に配置された前記第1導電型のチャネルストップ領域とを有し、
前記ソース領域は、前記トランジスタのチャネル幅方向において前記LOCOS領域のバーズビークの先端から離れて配置され、
前記チャネルストップ領域は、前記バーズビークの先端から前記ソース領域とは反対側に離れて配置されることを特徴とする半導体装置。 - 前記ウェル領域にリンが1E+16cm-3以上ドープされており、
前記ソース領域及び前記ドレイン領域にヒ素が1E+19cm-3以上ドープされており、
前記ソース領域が、前記トランジスタのチャネル幅方向において前記LOCOS領域のバーズビークの先端から0.3μm以上離れていることを特徴とする請求項1に記載の半導体装置。 - 前記第1導電型の第2ウェル領域と、
前記第2ウェル領域に配置された前記第2導電型の第2ソース領域及び第2ドレイン領域を有する第2トランジスタと、
前記第2ウェル領域において前記第2ソース領域及び前記第2ドレイン領域の周囲に配置された第2LOCOS領域と、
前記第2LOCOS領域の下に配置された前記第1導電型の第2チャネルストップ領域とを更に有し、
前記第2ソース領域及び前記第2ドレイン領域は、前記第2トランジスタのチャネル幅方向において前記第2LOCOS領域のバーズビークの先端から離れて配置され、
前記第2チャネルストップ領域は、前記バーズビークの先端から前記第2ソース領域及び前記第2ドレイン領域とは反対側に離れて配置されることを特徴とする請求項1又は2に記載の半導体装置。 - 基板内に形成された第1導電型のウェル領域と、
前記第1導電型とは異なる第2導電型のソース領域及びドレイン領域を有し、前記ソース領域が前記ウェル領域に配置され、前記ドレイン領域が前記ウェル領域に隣接した前記第2導電型の半導体領域に配置されたトランジスタと、
前記ウェル領域において前記ソース領域の周囲に配置された絶縁膜と、
前記絶縁膜の下に配置された前記第1導電型のチャネルストップ領域とを有し、
前記基板の表面に対する平面視において、前記ソース領域と、前記チャネルストップ領域とは、前記トランジスタのチャネル幅方向に沿って並んでいるとともに、互いに離れて配置され、
前記絶縁膜は、前記ソース領域と前記チャネルストップ領域との間に、前記チャネル幅方向に沿って膜厚が一定の第1部分と、前記チャネル幅方向に沿って膜厚が変化する第2部分とを含むことを特徴とする半導体装置。 - 前記ウェル領域にリンが1E+16cm-3以上ドープされており、
前記ソース領域及び前記ドレイン領域にヒ素が1E+19cm-3以上ドープされており、
前記ソース領域が、前記トランジスタのチャネル幅方向において、前記第1部分と前記第2部分との境界から0.3μm以上離れていることを特徴とする請求項4に記載の半導体装置。 - 前記第1導電型の第2ウェル領域と、
前記第2ウェル領域に配置された前記第2導電型の第2ソース領域及び第2ドレイン領域を有する第2トランジスタと、
前記第2ウェル領域において前記第2ソース領域及び前記第2ドレイン領域の周囲に配置された第2絶縁膜と、
前記第2絶縁膜の下に配置された前記第1導電型の第2チャネルストップ領域とを有し、
前記基板の表面に対する平面視において、前記第2ソース領域及び前記第2ドレイン領域と、前記第2チャネルストップ領域とは、前記第2トランジスタのチャネル幅方向に沿って並んでいるとともに、互いに離れて配置され、
前記第2絶縁膜は、前記第2ソース領域及び前記第2ドレイン領域と前記第2チャネルストップ領域との間に、前記第2トランジスタのチャネル幅方向に沿って膜厚が一定の第1部分と、前記第2トランジスタのチャネル幅方向に沿って膜厚が変化する第2部分とを含むことを特徴とする請求項4又は5に記載の半導体装置。 - 前記ウェル領域は、前記第2導電型の不純物と、当該不純物よりも濃度が高い前記第1導電型の不純物とを含むことを特徴とする請求項1乃至6の何れか1項に記載の半導体装置。
- 前記トランジスタを複数有するとともに、複数の電気熱変換体を更に有し、
前記複数の電気熱変換体の配列方向と前記複数のトランジスタの配列方向とが平行であることを特徴とする請求項1乃至7の何れか1項に記載の半導体装置。 - 1つの前記電気熱変換体に対して少なくとも2つの前記トランジスタの前記ドレイン領域が接続されているとともに、前記複数のトランジスタの前記ソース領域が互いに接続されていることを特徴とする請求項8に記載の半導体装置。
- 前記電気熱変換体に対応した液体吐出口が配置されていることを特徴とする請求項8又は9に記載の半導体装置。
- 前記電気熱変換体は半導体基板の上に配置された薄膜抵抗体であることを特徴とする請求項8乃至10の何れか1項に記載の半導体装置。
- 電気熱変換体に対応した液体吐出口が配置されている請求項1乃至11の何れか1項に記載の半導体装置と、
前記電気熱変換体により前記液体吐出口から吐出される液体を収容する液体収容器と、
前記半導体装置の前記トランジスタを駆動するための駆動制御信号を供給する制御器とを備えることを特徴とする液体吐出装置。 - トランジスタを有する半導体装置の製造方法であって、
第1導電型のウェル領域の上と、前記ウェル領域に隣接した前記第1導電型とは異なる第2導電型の半導体領域の上とに酸化膜が配置された半導体基板を準備する工程と、
前記トランジスタのソース領域及びドレイン領域が形成されるべき領域を覆うとともに、LOCOS領域が形成されるべき領域を露出する第1マスクを前記半導体基板の上に形成する工程と、
前記第1マスクの開口を通じて前記ウェル領域に前記第1導電型の不純物を注入する工程と、
前記酸化膜を選択的に成長させてLOCOS領域を形成してから、前記第1マスクを除去する工程と、
前記ソース領域及び前記ドレイン領域が形成されるべき領域を露出するとともに、前記LOCOS領域のバーズビークの先端から、前記トランジスタのチャネル幅方向に直交する方向に延びる部分を覆う第2マスクを前記ウェル領域、前記半導体領域及び前記LOCOS領域の上に形成する工程と、
前記第2マスクの開口を通じて前記半導体基板に第2導電型の不純物を注入することによって、前記ウェル領域に前記ソース領域を形成するとともに前記半導体領域に前記ドレイン領域を形成する工程とを有することを特徴とする製造方法。
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