JP2013247300A - 半導体装置、半導体装置の製造方法及び液体吐出装置 - Google Patents
半導体装置、半導体装置の製造方法及び液体吐出装置 Download PDFInfo
- Publication number
- JP2013247300A JP2013247300A JP2012121388A JP2012121388A JP2013247300A JP 2013247300 A JP2013247300 A JP 2013247300A JP 2012121388 A JP2012121388 A JP 2012121388A JP 2012121388 A JP2012121388 A JP 2012121388A JP 2013247300 A JP2013247300 A JP 2013247300A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- locos
- source
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 239000007788 liquid Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 241000293849 Cordylanthus Species 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract description 12
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 108091006146 Channels Proteins 0.000 description 33
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 14
- 229910052796 boron Inorganic materials 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0865—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】カウンタードープによって形成された第1導電型のウェル領域と、第1導電型とは異なる第2導電型のソース領域及びドレイン領域を有し、ソース領域及びドレイン領域の少なくとも一方がウェル領域に配置されたトランジスタと、ウェル領域においてソース領域及びドレイン領域の少なくとも一方の周囲に配置されたLOCOS領域と、LOCOS領域の下に配置された第1導電型のチャネルストップ領域とを有する半導体装置が提供される。ソース領域及びドレイン領域の少なくとも一方は、トランジスタのチャネル幅に平行な方向にLOCOS領域のバーズビークの先端から離れて配置される。チャネルストップ領域は、バーズビークの先端からソース領域及びドレイン領域の少なくとも一方とは反対側に離れて配置される。
【選択図】図1
Description
Claims (9)
- カウンタードープによって形成された第1導電型のウェル領域と、
前記第1導電型とは異なる第2導電型のソース領域及びドレイン領域を有し、前記ソース領域及び前記ドレイン領域の少なくとも一方が前記ウェル領域に配置されたトランジスタと、
前記ウェル領域において前記ソース領域及び前記ドレイン領域の前記少なくとも一方の周囲に配置されたLOCOS領域と、
前記LOCOS領域の下に配置された前記第1導電型のチャネルストップ領域とを有し、
前記ソース領域及び前記ドレイン領域の前記少なくとも一方は、前記トランジスタのチャネル幅に平行な方向に前記LOCOS領域のバーズビークの先端から離れて配置され、
前記チャネルストップ領域は、前記バーズビークの先端から前記ソース領域及び前記ドレイン領域の前記少なくとも一方とは反対側に離れて配置されることを特徴とする半導体装置。 - 前記ソース領域及び前記ドレイン領域の両方が前記ウェル領域に配置されることを特徴とする請求項1に記載の半導体装置。
- 前記ソース領域が前記ウェル領域に配置されるとともに、前記ドレイン領域が前記ウェル領域に隣接した前記第2導電型の半導体領域に配置され、
前記ソース領域は、前記トランジスタのチャネル幅に平行な方向において前記LOCOS領域から離れて配置されることを特徴とする請求項1又は2に記載の半導体装置。 - 前記トランジスタを複数有するとともに、複数の電気熱変換体を更に有し、
前記複数の電気熱変換体の配列方向と前記複数のトランジスタの配列方向とが平行であることを特徴とする請求項1乃至3の何れか1項に記載の半導体装置。 - 一つの前記電気熱変換体に対して少なくとも2つの前記トランジスタの前記ドレイン領域が接続されているとともに、前記複数のトランジスタの前記ソース領域は共通に接続されていることを特徴とする請求項4に記載の半導体装置。
- 前記電気熱変換体に対応した液体吐出口が配置されていることを特徴とする請求項4又は5に記載の半導体装置。
- 前記電気熱変換体は半導体基板の上に配置された薄膜抵抗体であることを特徴とする請求項4乃至6の何れか1項に記載の半導体装置。
- 電気熱変換体に対応した液体吐出口が配置されている請求項1乃至7の何れか1項に記載の半導体装置と、
前記電気熱変換体により前記液体吐出口から吐出される液体を収容する液体収容器と、
前記半導体装置の前記トランジスタを駆動するための駆動制御信号を供給する制御器とを備えることを特徴とする液体吐出装置。 - トランジスタを有する半導体装置の製造方法であって、
カウンタードープによって形成された第1導電型のウェル領域の上に酸化膜が配置された半導体基板を準備する工程と、
前記トランジスタのソース領域及びドレイン領域が形成されるべき領域を覆うとともに、LOCOS領域が形成されるべき領域を露出する第1マスクを前記ウェル領域の上に形成する工程と、
前記第1マスクの開口を通じて前記ウェル領域に前記第1導電型の不純物を注入する工程と、
前記酸化膜を選択的に成長させてLOCOS領域を形成してから、前記第1マスクを除去する工程と、
前記ソース領域及び前記ドレイン領域が形成されるべき領域を露出するとともに、前記LOCOS領域のバーズビークの先端のうち、前記トランジスタのチャネル幅に直交する方向に延びる部分を覆う第2マスクを前記ウェル領域及び前記LOCOS領域の上に形成する工程と、
前記第2マスクの開口を通じて前記ウェル領域に前記第1導電型とは異なる第2導電型の不純物を注入して前記ソース領域及び前記ドレイン領域を形成する工程とを有することを特徴とする製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012121388A JP6027771B2 (ja) | 2012-05-28 | 2012-05-28 | 半導体装置、半導体装置の製造方法及び液体吐出装置 |
US13/889,630 US8814298B2 (en) | 2012-05-28 | 2013-05-08 | Semiconductor device, method of manufacturing semiconductor device, and liquid discharge apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012121388A JP6027771B2 (ja) | 2012-05-28 | 2012-05-28 | 半導体装置、半導体装置の製造方法及び液体吐出装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013247300A true JP2013247300A (ja) | 2013-12-09 |
JP2013247300A5 JP2013247300A5 (ja) | 2015-05-07 |
JP6027771B2 JP6027771B2 (ja) | 2016-11-16 |
Family
ID=49621271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012121388A Expired - Fee Related JP6027771B2 (ja) | 2012-05-28 | 2012-05-28 | 半導体装置、半導体装置の製造方法及び液体吐出装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8814298B2 (ja) |
JP (1) | JP6027771B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015189049A (ja) * | 2014-03-27 | 2015-11-02 | キヤノン株式会社 | 液体吐出用基板、液体吐出用ヘッド、および、記録装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013187263A (ja) | 2012-03-06 | 2013-09-19 | Canon Inc | 半導体装置、記録装置及びそれらの製造方法 |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61226942A (ja) * | 1985-04-01 | 1986-10-08 | Matsushita Electronics Corp | 半導体集積回路の素子間分離方法 |
JPS63157437A (ja) * | 1986-12-22 | 1988-06-30 | Sony Corp | 半導体装置の製造方法 |
JPS6489367A (en) * | 1987-09-30 | 1989-04-03 | Fujitsu Ltd | High breakdown strength semiconductor device |
JPH03129767A (ja) * | 1989-06-28 | 1991-06-03 | Nec Corp | 相補型電界効果トランジスタ |
JPH03272181A (ja) * | 1990-03-21 | 1991-12-03 | Sony Corp | Mosトランジスタ |
JPH03283574A (ja) * | 1990-03-30 | 1991-12-13 | Yokogawa Electric Corp | 半導体装置およびその製造方法 |
JPH0536679A (ja) * | 1991-07-31 | 1993-02-12 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPH05335407A (ja) * | 1992-06-01 | 1993-12-17 | Miyagi Oki Denki Kk | 半導体装置の製造方法 |
JPH06216380A (ja) * | 1992-10-07 | 1994-08-05 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JPH10284479A (ja) * | 1997-04-07 | 1998-10-23 | Nittetsu Semiconductor Kk | 半導体集積回路の製造方法 |
JP2000174218A (ja) * | 1998-12-04 | 2000-06-23 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
JP2000357794A (ja) * | 1999-06-17 | 2000-12-26 | Nec Corp | 半導体装置 |
JP2002313942A (ja) * | 2000-12-28 | 2002-10-25 | Canon Inc | 半導体装置およびその製造方法とそれを用いた液体吐出装置 |
JP2003086790A (ja) * | 2001-06-27 | 2003-03-20 | Ricoh Co Ltd | 半導体装置及びその製造方法、並びにその応用装置 |
JP2004042379A (ja) * | 2002-07-10 | 2004-02-12 | Canon Inc | 半導体装置及びそれを用いた液体吐出装置 |
JP2006261487A (ja) * | 2005-03-18 | 2006-09-28 | Yamaha Corp | フィールド酸化膜形成法 |
JP2010016155A (ja) * | 2008-07-03 | 2010-01-21 | Seiko Epson Corp | 半導体装置 |
JP2012028378A (ja) * | 2010-07-20 | 2012-02-09 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215672A (ja) | 1988-07-04 | 1990-01-19 | Sony Corp | 半導体装置 |
JP4319078B2 (ja) * | 2004-03-26 | 2009-08-26 | シャープ株式会社 | 半導体装置の製造方法 |
JP5296450B2 (ja) * | 2008-08-13 | 2013-09-25 | セイコーインスツル株式会社 | 半導体装置 |
JP2013187263A (ja) | 2012-03-06 | 2013-09-19 | Canon Inc | 半導体装置、記録装置及びそれらの製造方法 |
-
2012
- 2012-05-28 JP JP2012121388A patent/JP6027771B2/ja not_active Expired - Fee Related
-
2013
- 2013-05-08 US US13/889,630 patent/US8814298B2/en not_active Expired - Fee Related
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61226942A (ja) * | 1985-04-01 | 1986-10-08 | Matsushita Electronics Corp | 半導体集積回路の素子間分離方法 |
JPS63157437A (ja) * | 1986-12-22 | 1988-06-30 | Sony Corp | 半導体装置の製造方法 |
JPS6489367A (en) * | 1987-09-30 | 1989-04-03 | Fujitsu Ltd | High breakdown strength semiconductor device |
JPH03129767A (ja) * | 1989-06-28 | 1991-06-03 | Nec Corp | 相補型電界効果トランジスタ |
JPH03272181A (ja) * | 1990-03-21 | 1991-12-03 | Sony Corp | Mosトランジスタ |
JPH03283574A (ja) * | 1990-03-30 | 1991-12-13 | Yokogawa Electric Corp | 半導体装置およびその製造方法 |
JPH0536679A (ja) * | 1991-07-31 | 1993-02-12 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPH05335407A (ja) * | 1992-06-01 | 1993-12-17 | Miyagi Oki Denki Kk | 半導体装置の製造方法 |
JPH06216380A (ja) * | 1992-10-07 | 1994-08-05 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JPH10284479A (ja) * | 1997-04-07 | 1998-10-23 | Nittetsu Semiconductor Kk | 半導体集積回路の製造方法 |
JP2000174218A (ja) * | 1998-12-04 | 2000-06-23 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
JP2000357794A (ja) * | 1999-06-17 | 2000-12-26 | Nec Corp | 半導体装置 |
JP2002313942A (ja) * | 2000-12-28 | 2002-10-25 | Canon Inc | 半導体装置およびその製造方法とそれを用いた液体吐出装置 |
JP2003086790A (ja) * | 2001-06-27 | 2003-03-20 | Ricoh Co Ltd | 半導体装置及びその製造方法、並びにその応用装置 |
JP2004042379A (ja) * | 2002-07-10 | 2004-02-12 | Canon Inc | 半導体装置及びそれを用いた液体吐出装置 |
JP2006261487A (ja) * | 2005-03-18 | 2006-09-28 | Yamaha Corp | フィールド酸化膜形成法 |
JP2010016155A (ja) * | 2008-07-03 | 2010-01-21 | Seiko Epson Corp | 半導体装置 |
JP2012028378A (ja) * | 2010-07-20 | 2012-02-09 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015189049A (ja) * | 2014-03-27 | 2015-11-02 | キヤノン株式会社 | 液体吐出用基板、液体吐出用ヘッド、および、記録装置 |
Also Published As
Publication number | Publication date |
---|---|
US8814298B2 (en) | 2014-08-26 |
JP6027771B2 (ja) | 2016-11-16 |
US20130314463A1 (en) | 2013-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5425142B2 (ja) | 半導体装置の製造方法 | |
US6800902B2 (en) | Semiconductor device, method of manufacturing the same and liquid jet apparatus | |
JP3305415B2 (ja) | 半導体装置、インクジェットヘッド、および画像形成装置 | |
JP4437388B2 (ja) | 半導体装置 | |
JP6027771B2 (ja) | 半導体装置、半導体装置の製造方法及び液体吐出装置 | |
JP4125153B2 (ja) | 半導体装置及びそれを用いた液体吐出装置 | |
JP4272854B2 (ja) | 半導体装置及びそれを用いた液体吐出装置 | |
JP2002313942A (ja) | 半導体装置およびその製造方法とそれを用いた液体吐出装置 | |
US9463618B2 (en) | Liquid discharge substrate, liquid discharge head, and recording device | |
JP2013187263A (ja) | 半導体装置、記録装置及びそれらの製造方法 | |
JP4011927B2 (ja) | 半導体装置及び液体吐出装置 | |
JP2006245597A (ja) | 半導体装置の製造方法 | |
JP2007053399A (ja) | 半導体装置 | |
JP4827817B2 (ja) | 半導体装置およびそれを用いた液体吐出装置 | |
JP2007048888A (ja) | 半導体装置 | |
JP2003142596A (ja) | 半導体装置及びその製造方法並びにインクジェットヘッド | |
JP2016009807A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150319 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150319 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160408 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160708 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160727 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160916 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161017 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6027771 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |