JP6026241B2 - 基板処理装置、基板処理方法及び記憶媒体 - Google Patents

基板処理装置、基板処理方法及び記憶媒体 Download PDF

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Publication number
JP6026241B2
JP6026241B2 JP2012254424A JP2012254424A JP6026241B2 JP 6026241 B2 JP6026241 B2 JP 6026241B2 JP 2012254424 A JP2012254424 A JP 2012254424A JP 2012254424 A JP2012254424 A JP 2012254424A JP 6026241 B2 JP6026241 B2 JP 6026241B2
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exhaust
substrate
housing
flow rate
cup
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Japanese (ja)
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JP2014103263A (ja
JP2014103263A5 (enExample
Inventor
塚 貴 久 大
塚 貴 久 大
方 信 博 緒
方 信 博 緒
本 洋 丸
本 洋 丸
山 輝 史 脇
山 輝 史 脇
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2012254424A priority Critical patent/JP6026241B2/ja
Priority to TW102141258A priority patent/TWI547986B/zh
Priority to US14/083,673 priority patent/US20140137893A1/en
Priority to KR1020130140481A priority patent/KR101949722B1/ko
Publication of JP2014103263A publication Critical patent/JP2014103263A/ja
Publication of JP2014103263A5 publication Critical patent/JP2014103263A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012254424A 2012-11-20 2012-11-20 基板処理装置、基板処理方法及び記憶媒体 Active JP6026241B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012254424A JP6026241B2 (ja) 2012-11-20 2012-11-20 基板処理装置、基板処理方法及び記憶媒体
TW102141258A TWI547986B (zh) 2012-11-20 2013-11-13 A substrate processing apparatus, a substrate processing method, and a memory medium
US14/083,673 US20140137893A1 (en) 2012-11-20 2013-11-19 Substrate processing apparatus, substrate processing method and storage medium
KR1020130140481A KR101949722B1 (ko) 2012-11-20 2013-11-19 기판 처리 장치, 기판 처리 방법 및 기억 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012254424A JP6026241B2 (ja) 2012-11-20 2012-11-20 基板処理装置、基板処理方法及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2014103263A JP2014103263A (ja) 2014-06-05
JP2014103263A5 JP2014103263A5 (enExample) 2015-04-30
JP6026241B2 true JP6026241B2 (ja) 2016-11-16

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JP2012254424A Active JP6026241B2 (ja) 2012-11-20 2012-11-20 基板処理装置、基板処理方法及び記憶媒体

Country Status (4)

Country Link
US (1) US20140137893A1 (enExample)
JP (1) JP6026241B2 (enExample)
KR (1) KR101949722B1 (enExample)
TW (1) TWI547986B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698029B2 (en) * 2014-02-19 2017-07-04 Lam Research Ag Method and apparatus for processing wafer-shaped articles
KR102232664B1 (ko) * 2014-05-28 2021-03-30 세메스 주식회사 기판 처리 장치 및 기판 처리 시스템
JP6306459B2 (ja) * 2014-07-15 2018-04-04 東京エレクトロン株式会社 基板処理装置および基板処理方法
US10203604B2 (en) 2015-11-30 2019-02-12 Applied Materials, Inc. Method and apparatus for post exposure processing of photoresist wafers
KR102387542B1 (ko) * 2017-05-11 2022-04-19 주식회사 케이씨텍 에어공급부 및 기판 처리 장치
JP6887912B2 (ja) * 2017-08-07 2021-06-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6990602B2 (ja) * 2018-02-27 2022-01-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
JP7015219B2 (ja) * 2018-06-29 2022-02-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102201879B1 (ko) * 2018-09-07 2021-01-12 세메스 주식회사 기판 처리 장치 및 방법
JP7307575B2 (ja) 2019-03-28 2023-07-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7314634B2 (ja) * 2019-06-11 2023-07-26 東京エレクトロン株式会社 塗布装置及び塗布方法
KR102351341B1 (ko) * 2019-12-09 2022-01-18 무진전자 주식회사 팬 필터 유닛 및 이를 포함하는 기판 처리 장치
JP7356896B2 (ja) 2019-12-24 2023-10-05 東京エレクトロン株式会社 液処理装置、液処理方法及びコンピュータ読み取り可能な記録媒体
US20210265177A1 (en) * 2020-02-26 2021-08-26 SCREEN Holdings Co., Ltd. Substrate treating apparatus
KR102835069B1 (ko) * 2020-04-16 2025-07-17 주식회사 제우스 기판 처리장치 및 기판 처리방법
KR102388473B1 (ko) * 2020-08-11 2022-04-20 (주)마스 클린 건조 공기 셔터 팬 필터 유닛
TWI770753B (zh) * 2021-01-04 2022-07-11 南亞科技股份有限公司 清洗裝置及清洗方法
KR20220131680A (ko) * 2021-03-22 2022-09-29 세메스 주식회사 기판 처리 장치
JP7719651B2 (ja) * 2021-07-15 2025-08-06 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置、基板洗浄システム、基板処理システム、基板洗浄方法および基板処理方法
KR102571523B1 (ko) * 2021-09-10 2023-08-29 (주)디바이스이엔지 배기구조를 포함하는 기판 처리장치
KR102646155B1 (ko) * 2022-10-05 2024-03-12 엘에스이 주식회사 기판 세정 장치
KR102844261B1 (ko) * 2024-01-04 2025-08-11 엘에스이 주식회사 기판 세정 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148231A (ja) * 1995-11-16 1997-06-06 Dainippon Screen Mfg Co Ltd 回転式基板処理装置
JP3380663B2 (ja) * 1995-11-27 2003-02-24 大日本スクリーン製造株式会社 基板処理装置
JP2003347186A (ja) * 2002-05-23 2003-12-05 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4381909B2 (ja) * 2004-07-06 2009-12-09 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4762098B2 (ja) 2006-09-28 2011-08-31 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP5143498B2 (ja) 2006-10-06 2013-02-13 東京エレクトロン株式会社 基板処理方法、基板処理装置、プログラムならびに記録媒体
JP5173502B2 (ja) * 2008-03-14 2013-04-03 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4516141B2 (ja) 2008-06-02 2010-08-04 東京エレクトロン株式会社 基板処理方法，記録媒体及び基板処理装置
JP2010080717A (ja) 2008-09-26 2010-04-08 Tokyo Electron Ltd プラズマ処理装置用の載置台
JP5472169B2 (ja) 2011-03-16 2014-04-16 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
JP2012204719A (ja) * 2011-03-28 2012-10-22 Dainippon Screen Mfg Co Ltd 基板処理装置

Also Published As

Publication number Publication date
KR101949722B1 (ko) 2019-02-19
JP2014103263A (ja) 2014-06-05
TW201440133A (zh) 2014-10-16
KR20140064666A (ko) 2014-05-28
US20140137893A1 (en) 2014-05-22
TWI547986B (zh) 2016-09-01

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