JP6021613B2 - 撮像素子、撮像装置、および、撮像システム - Google Patents

撮像素子、撮像装置、および、撮像システム Download PDF

Info

Publication number
JP6021613B2
JP6021613B2 JP2012261605A JP2012261605A JP6021613B2 JP 6021613 B2 JP6021613 B2 JP 6021613B2 JP 2012261605 A JP2012261605 A JP 2012261605A JP 2012261605 A JP2012261605 A JP 2012261605A JP 6021613 B2 JP6021613 B2 JP 6021613B2
Authority
JP
Japan
Prior art keywords
pixel
pixels
charge
boundary
boundary portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012261605A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014107835A5 (enExample
JP2014107835A (ja
Inventor
昌彦 奥沢
昌彦 奥沢
武志 小川
武志 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012261605A priority Critical patent/JP6021613B2/ja
Priority to US14/087,752 priority patent/US9224776B2/en
Priority to CN201310628779.7A priority patent/CN103856700B/zh
Publication of JP2014107835A publication Critical patent/JP2014107835A/ja
Priority to US14/948,810 priority patent/US9450006B2/en
Publication of JP2014107835A5 publication Critical patent/JP2014107835A5/ja
Application granted granted Critical
Publication of JP6021613B2 publication Critical patent/JP6021613B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80—Camera processing pipelines; Components thereof
    • H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
    • H04N23/843—Demosaicing, e.g. interpolating colour pixel values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Automatic Focus Adjustment (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Focusing (AREA)
JP2012261605A 2012-11-29 2012-11-29 撮像素子、撮像装置、および、撮像システム Active JP6021613B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012261605A JP6021613B2 (ja) 2012-11-29 2012-11-29 撮像素子、撮像装置、および、撮像システム
US14/087,752 US9224776B2 (en) 2012-11-29 2013-11-22 Image pickup element, image pickup apparatus, and image pickup system
CN201310628779.7A CN103856700B (zh) 2012-11-29 2013-11-29 摄像元件、摄像设备和摄像系统
US14/948,810 US9450006B2 (en) 2012-11-29 2015-11-23 Image pickup element, image pickup apparatus, and image pickup system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012261605A JP6021613B2 (ja) 2012-11-29 2012-11-29 撮像素子、撮像装置、および、撮像システム

Publications (3)

Publication Number Publication Date
JP2014107835A JP2014107835A (ja) 2014-06-09
JP2014107835A5 JP2014107835A5 (enExample) 2016-01-21
JP6021613B2 true JP6021613B2 (ja) 2016-11-09

Family

ID=50772959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012261605A Active JP6021613B2 (ja) 2012-11-29 2012-11-29 撮像素子、撮像装置、および、撮像システム

Country Status (3)

Country Link
US (2) US9224776B2 (enExample)
JP (1) JP6021613B2 (enExample)
CN (1) CN103856700B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014106476A (ja) 2012-11-29 2014-06-09 Canon Inc 焦点検出装置、撮像装置、撮像システム、焦点検出方法、プログラム、および、記憶媒体
JP6021613B2 (ja) * 2012-11-29 2016-11-09 キヤノン株式会社 撮像素子、撮像装置、および、撮像システム
JP6164849B2 (ja) * 2013-01-18 2017-07-19 キヤノン株式会社 信号処理装置、撮像装置、および、撮像システム
JP6355362B2 (ja) * 2014-02-28 2018-07-11 キヤノン株式会社 光電変換装置および撮像システム
US9794468B2 (en) * 2014-12-02 2017-10-17 Canon Kabushiki Kaisha Image sensor, image capturing apparatus, focus detection apparatus, image processing apparatus, and control method of image capturing apparatus using pupil division in different directions
CN115132768A (zh) * 2014-12-18 2022-09-30 索尼公司 固体摄像器件和电子装置
JP6531986B2 (ja) * 2015-01-09 2019-06-19 パナソニックＩｐマネジメント株式会社 撮像装置、撮像システム、復元装置、撮像方法およびコンピュータプログラム
US9998691B2 (en) * 2015-03-11 2018-06-12 Canon Kabushiki Kaisha Pixel, a solid-state imaging device, and an imaging apparatus having barrier region between photoelectric conversion portions in parallel
JP6676393B2 (ja) * 2015-03-11 2020-04-08 キヤノン株式会社 固体撮像素子およびそれを備える撮像装置
US9749556B2 (en) * 2015-03-24 2017-08-29 Semiconductor Components Industries, Llc Imaging systems having image sensor pixel arrays with phase detection capabilities
KR20170056909A (ko) 2015-11-16 2017-05-24 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
JP2017162985A (ja) * 2016-03-09 2017-09-14 キヤノン株式会社 撮像装置
WO2017175579A1 (ja) 2016-04-07 2017-10-12 富士フイルム株式会社 合焦制御装置、レンズ装置、撮像装置、合焦制御方法、合焦制御プログラム
JP7005125B2 (ja) * 2016-04-22 2022-01-21 キヤノン株式会社 撮像素子、撮像システム、および撮像素子の製造方法
JP6759088B2 (ja) * 2016-12-20 2020-09-23 キヤノン株式会社 撮像装置とその制御方法及びプログラム
US20180301484A1 (en) * 2017-04-17 2018-10-18 Semiconductor Components Industries, Llc Image sensors with high dynamic range and autofocusing hexagonal pixels
JP7067907B2 (ja) * 2017-12-01 2022-05-16 キヤノン株式会社 固体撮像装置及び信号処理装置
TWI833775B (zh) * 2018-07-10 2024-03-01 日商索尼半導體解決方案公司 固態攝像裝置及電子裝置
CN114175622B (zh) * 2019-09-17 2024-11-19 索尼半导体解决方案公司 摄像元件和摄像装置
KR20210128803A (ko) * 2020-04-17 2021-10-27 삼성전자주식회사 다중 포토다이오드 센서에 의해 획득된 서브 이미지들의 차이에 기반하여 이미지의 결함을 검출하는 전자 장치 및 이의 동작 방법
US12068340B2 (en) 2020-10-05 2024-08-20 Samsung Electronics Co., Ltd. Image sensor comprising an inter-pixel overflow (IPO) barrier and electronic system including the same
JP2023104684A (ja) * 2022-01-18 2023-07-28 キヤノン株式会社 撮像素子及び撮像装置

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4040139B2 (ja) * 1997-05-12 2008-01-30 キヤノン株式会社 カメラ
JP3774597B2 (ja) 1999-09-13 2006-05-17 キヤノン株式会社 撮像装置
JP2001250931A (ja) * 2000-03-07 2001-09-14 Canon Inc 固体撮像装置およびこれを用いた撮像システム
JP2001291858A (ja) * 2000-04-04 2001-10-19 Sony Corp 固体撮像素子及びその製造方法
JP3530159B2 (ja) * 2001-08-22 2004-05-24 松下電器産業株式会社 固体撮像装置およびその製造方法
JP4235787B2 (ja) * 2001-10-03 2009-03-11 ソニー株式会社 固体撮像素子の製造方法
JP2003218332A (ja) * 2002-01-22 2003-07-31 Sony Corp 固体撮像素子
US7301571B2 (en) * 2003-01-17 2007-11-27 Fujifilm Corporation Method and imaging apparatus for correcting defective pixel of solid-state image sensor, and method for creating pixel information
KR100561003B1 (ko) * 2003-09-30 2006-03-16 동부아남반도체 주식회사 이미지 센서 및 그 제조방법
US7332786B2 (en) * 2003-11-26 2008-02-19 Micron Technology, Inc. Anti-blooming storage pixel
KR100614653B1 (ko) * 2004-11-18 2006-08-22 삼성전자주식회사 백점 및 오버플로우의 문제없이 글로벌 노출이 가능한씨모스 이미지 센서 및 그 제조 방법
KR100598015B1 (ko) * 2005-02-07 2006-07-06 삼성전자주식회사 공유 구조 상보성 금속 산화막 반도체 액티브 픽셀 센서어레이의 레이 아웃
KR100642753B1 (ko) * 2005-02-11 2006-11-10 삼성전자주식회사 이미지 센서
KR100638260B1 (ko) * 2005-06-24 2006-10-25 한국과학기술원 씨모스 이미지 센서
US20070018073A1 (en) * 2005-07-22 2007-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS image sensor device with beehive pattern color sensor cell array
JP4442590B2 (ja) * 2005-08-17 2010-03-31 ソニー株式会社 固体撮像素子およびその駆動装置、撮像装置、並びに、固体撮像素子の駆動方法
US7714917B2 (en) * 2005-08-30 2010-05-11 Aptina Imaging Corporation Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
US7659564B2 (en) * 2006-02-14 2010-02-09 International Business Machines Corporation CMOS imager photodiode with enhanced capacitance
KR100703987B1 (ko) * 2006-05-17 2007-04-09 삼성전자주식회사 이미지 센서의 제조 방법 및 그에 의해 제조된 이미지 센서
JP4807253B2 (ja) * 2006-12-28 2011-11-02 株式会社デンソー 画像データ生成装置及び受光デバイス
JP5076528B2 (ja) * 2007-02-06 2012-11-21 株式会社ニコン 光電変換部の連結／分離構造、固体撮像素子及び撮像装置
US7755121B2 (en) * 2007-08-23 2010-07-13 Aptina Imaging Corp. Imagers, apparatuses and systems utilizing pixels with improved optical resolution and methods of operating the same
EP2665256B1 (en) * 2007-09-05 2015-11-18 Tohoku University Solid-state image sensor and drive method for the same
JP2009065162A (ja) * 2007-09-07 2009-03-26 Dongbu Hitek Co Ltd イメージセンサ及びその製造方法
JP5314914B2 (ja) * 2008-04-04 2013-10-16 キヤノン株式会社 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法
JP2009295918A (ja) * 2008-06-09 2009-12-17 Panasonic Corp 固体撮像装置及びその製造方法
US8860861B2 (en) * 2008-08-11 2014-10-14 Honda Motor Co., Ltd. Pixel, pixel forming method, imaging device and imaging forming method
TWI433307B (zh) * 2008-10-22 2014-04-01 Sony Corp 固態影像感測器、其驅動方法、成像裝置及電子器件
JP5422985B2 (ja) * 2008-12-08 2014-02-19 ソニー株式会社 画素回路、固体撮像素子、およびカメラシステム
JP5558857B2 (ja) * 2009-03-09 2014-07-23 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5257176B2 (ja) * 2009-03-18 2013-08-07 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
JP5278165B2 (ja) * 2009-05-26 2013-09-04 ソニー株式会社 焦点検出装置、撮像素子および電子カメラ
JP5552768B2 (ja) * 2009-07-27 2014-07-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
EP2315251A1 (fr) * 2009-10-22 2011-04-27 STMicroelectronics (Crolles 2) SAS Capteur d'image à grille de transfert verticale et son procédé de fabrication
JP2011095369A (ja) * 2009-10-28 2011-05-12 Sony Corp 立体画像表示装置及びその駆動方法
FR2954587B1 (fr) * 2009-11-10 2012-07-20 St Microelectronics Sa Procede de formation d'un capteur d'images eclaire par la face arriere
JP5478217B2 (ja) * 2009-11-25 2014-04-23 パナソニック株式会社 固体撮像装置
JP5564909B2 (ja) * 2009-11-30 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2011114324A (ja) * 2009-11-30 2011-06-09 Sony Corp 固体撮像装置及び電子機器
JP5509846B2 (ja) * 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2011159756A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP5651976B2 (ja) * 2010-03-26 2015-01-14 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP5538976B2 (ja) * 2010-03-29 2014-07-02 ソニー株式会社 固体撮像素子、撮像装置
JP2011222708A (ja) * 2010-04-08 2011-11-04 Sony Corp 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP5644177B2 (ja) * 2010-05-07 2014-12-24 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP2011253962A (ja) * 2010-06-02 2011-12-15 Sony Corp 固体撮像素子の製造方法、固体撮像素子、撮像装置
JP5744556B2 (ja) * 2011-02-10 2015-07-08 オリンパス株式会社 撮像素子および撮像装置
JP2012182377A (ja) * 2011-03-02 2012-09-20 Sony Corp 固体撮像装置
US8674282B2 (en) * 2011-03-25 2014-03-18 Aptina Imaging Corporation Pumped pinned photodiode pixel array
KR101251744B1 (ko) * 2011-04-13 2013-04-05 엘지이노텍 주식회사 Ｗｄｒ 픽셀 어레이, 이를 포함하는 ｗｄｒ 이미징 장치 및 그 구동방법
KR101241553B1 (ko) * 2011-04-13 2013-03-11 엘지이노텍 주식회사 Ｗｄｒ 픽셀 어레이, 이를 포함하는 ｗｄｒ 이미징 장치 및 그 구동방법
JP2013016675A (ja) * 2011-07-05 2013-01-24 Sony Corp 固体撮像装置、電子機器、及び、固体撮像装置の製造方法
JP5537523B2 (ja) * 2011-09-22 2014-07-02 株式会社東芝 固体撮像装置
JP5743837B2 (ja) * 2011-10-07 2015-07-01 キヤノン株式会社 光電変換装置、撮像装置および撮像システム
US20140306311A1 (en) * 2011-12-01 2014-10-16 Sharp Kabushiki Kaisha Solid-state imaging element
JP6172888B2 (ja) * 2012-01-18 2017-08-02 キヤノン株式会社 撮像装置および撮像システム
JP5943655B2 (ja) * 2012-03-12 2016-07-05 キヤノン株式会社 画像処理装置、焦点検出装置、および、画像処理プログラム
JP6021613B2 (ja) * 2012-11-29 2016-11-09 キヤノン株式会社 撮像素子、撮像装置、および、撮像システム
JP6164849B2 (ja) * 2013-01-18 2017-07-19 キヤノン株式会社 信号処理装置、撮像装置、および、撮像システム

Also Published As

Publication number Publication date
CN103856700A (zh) 2014-06-11
US9224776B2 (en) 2015-12-29
CN103856700B (zh) 2017-03-01
US20160079295A1 (en) 2016-03-17
US9450006B2 (en) 2016-09-20
JP2014107835A (ja) 2014-06-09
US20140146197A1 (en) 2014-05-29

Similar Documents

Publication Publication Date Title
JP6021613B2 (ja) 撮像素子、撮像装置、および、撮像システム
US9197807B2 (en) Imaging device including phase detection pixels arranged to perform capturing and to detect phase difference
TWI795686B (zh) 多個子像素間具有共享微透鏡的影像感測器
JP6164849B2 (ja) 信号処理装置、撮像装置、および、撮像システム
JP5743837B2 (ja) 光電変換装置、撮像装置および撮像システム
EP2618377B1 (en) Image pickup apparatus and image pickup system
JP6238546B2 (ja) 光電変換装置および撮像システム
JP5661201B2 (ja) 固体撮像装置
JP2012215785A5 (enExample)
KR20160065464A (ko) 컬러 필터 어레이, 이를 포함하는 이미지 센서 및 이를 이용한 적외선 정보 획득 방법
JP6355362B2 (ja) 光電変換装置および撮像システム
US10068940B2 (en) Imaging apparatus with focus-ranging precision in one direction due to saturated photoelectric conversion elements located adjacent to each other
JP2016111678A (ja) 撮像素子、撮像装置、焦点検出装置ならびに画像処理装置およびその制御方法
KR20240091440A (ko) 서로 다른 크기의 마이크로 렌즈를 포함하는 이미지 센서
KR100837454B1 (ko) 고체 촬상 장치
JP2015146465A (ja) 光電変換装置
JP2018142739A (ja) 光電変換装置
JP2012211942A (ja) 固体撮像素子及び撮像装置
KR20160072508A (ko) 컬러 필터 어레이 및 이를 구비한 이미지 센서
JP2014187648A (ja) 固体撮像装置
JP6351789B2 (ja) 光電変換装置
JP5730419B2 (ja) 撮像装置
JP5961720B2 (ja) 撮像装置
JP2019061035A (ja) 撮像装置及び撮像方法
CN117751576A (zh) 无去马赛克的像素阵列、图像传感器、电子设备及其操作方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151127

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151127

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160819

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160906

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161004

R151 Written notification of patent or utility model registration

Ref document number: 6021613

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151