JP5478217B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP5478217B2 JP5478217B2 JP2009267550A JP2009267550A JP5478217B2 JP 5478217 B2 JP5478217 B2 JP 5478217B2 JP 2009267550 A JP2009267550 A JP 2009267550A JP 2009267550 A JP2009267550 A JP 2009267550A JP 5478217 B2 JP5478217 B2 JP 5478217B2
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- 238000003384 imaging method Methods 0.000 title claims description 40
- 238000006243 chemical reaction Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 53
- 239000012535 impurity Substances 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 43
- 238000009792 diffusion process Methods 0.000 claims description 32
- 238000002513 implantation Methods 0.000 claims description 32
- 238000001514 detection method Methods 0.000 claims description 28
- 238000000926 separation method Methods 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 13
- 238000002834 transmittance Methods 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 104
- 230000004048 modification Effects 0.000 description 23
- 238000012986 modification Methods 0.000 description 23
- 230000035945 sensitivity Effects 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Description
本発明の一実施形態について図1を参照しながら説明する。なお、本発明は、以下の一実施形態及び後述する各変形例に限定されない。また、本発明の効果を奏する範囲を逸脱しない範囲で適宜変更可能である。さらに、各変形例との組み合わせることも可能である。
以下、一実施形態の第1変形例について図2を参照しながら説明する。
以下、一実施形態の第2変形例について図3を参照しながら説明する。
以下、一実施形態の第3変形例について図4及び図5を参照しながら説明する。
10 分離拡散層
11 光電変換部(フォトダイオード)
12 出力回路
13 絶縁分離部
14 配線
15 層間膜
16 絶縁膜
17 青カラーフィルタ
18 緑カラーフィルタ
19 赤カラーフィルタ
20 第1の高濃度p型層
21 第2の高濃度p型層
22 第3の高濃度p型層
23 第4の高濃度p型層
24 第1のオーバフロードレイン層
25 第2のオーバフロードレイン層
26 第3のオーバフロードレイン層
100B 画素部(青)
100G 画素部(緑)
100R 画素部(赤)
Claims (5)
- 半導体基板と、
前記半導体基板の上部に行列状に配置して形成された第1導電型の複数の光電変換部と、
前記半導体基板の一の面である電荷検出面に形成され、前記光電変換部に蓄積される電荷を検出する検出回路部と、
前記検出回路部の下側に形成され、前記各光電変換部と接する第2導電型の不純物注入領域を含む第2導電型の複数の分離拡散層と、
前記半導体基板における前記一の面と対向する他の面である光入射面に形成され、異なる波長の光を透過する複数のカラーフィルタとを備え、
前記各光電変換部の形状は、前記カラーフィルタと対応して、前記分離拡散層を構成する前記不純物注入領域により異なることを特徴とする固体撮像装置。 - 前記複数の光電変換部は、第1の波長領域において透過率が最大となる第1のカラーフィルタと対応する第1の光電変換部と、前記第1の波長領域よりも波長が長い第2の波長領域において透過率が最大となる第2のカラーフィルタと対応する第2の光電変換部とを有し、
前記第2の光電変換部における前記光入射面と平行な方向の幅が最大となる領域は、前記第1の光電変換部における前記光入射面と平行な方向の幅が最大となる領域よりも、前記電荷検出面に近いことを特徴とする請求項1に記載の固体撮像装置。 - 前記複数の光電変換部は、前記第2の波長領域よりも波長が長い第3の波長領域において透過率が最大となる第3のカラーフィルタと対応する第3の光電変換部をさらに有し、
前記第3の光電変換部は、前記光入射面における開口面積及び前記電荷検出面における開口面積と比べて、前記半導体基板の内部において前記光入射面と平行な方向の断面積が最大となることを特徴とする請求項2に記載の固体撮像装置。 - 前記第3の光電変換部における前記光入射面と平行な方向の幅が最大となる領域は、前記分離拡散層の内部に拡張して形成されていることを特徴とする請求項3に記載の固体撮像装置。
- 前記第3の光電変換部における前記光入射面と平行な方向の幅が最大となる領域は、前記第3の光電変換部と隣接する少なくとも1つの第1の光電変換部における電荷検出面側の下方にまで拡張して形成されていることを特徴とする請求項3に記載の固体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009267550A JP5478217B2 (ja) | 2009-11-25 | 2009-11-25 | 固体撮像装置 |
CN201080052831.3A CN102668083B (zh) | 2009-11-25 | 2010-08-04 | 固体摄像装置 |
PCT/JP2010/004906 WO2011064920A1 (ja) | 2009-11-25 | 2010-08-04 | 固体撮像装置 |
US13/462,895 US8680640B2 (en) | 2009-11-25 | 2012-05-03 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009267550A JP5478217B2 (ja) | 2009-11-25 | 2009-11-25 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011114068A JP2011114068A (ja) | 2011-06-09 |
JP5478217B2 true JP5478217B2 (ja) | 2014-04-23 |
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JP2009267550A Active JP5478217B2 (ja) | 2009-11-25 | 2009-11-25 | 固体撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8680640B2 (ja) |
JP (1) | JP5478217B2 (ja) |
CN (1) | CN102668083B (ja) |
WO (1) | WO2011064920A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014022448A (ja) * | 2012-07-13 | 2014-02-03 | Toshiba Corp | 固体撮像装置 |
JP6021613B2 (ja) * | 2012-11-29 | 2016-11-09 | キヤノン株式会社 | 撮像素子、撮像装置、および、撮像システム |
CN104823442B (zh) * | 2012-12-05 | 2018-03-30 | 松下知识产权经营株式会社 | 固体摄像装置 |
JP2014179413A (ja) * | 2013-03-14 | 2014-09-25 | Toshiba Corp | 固体撮像装置 |
JP6285667B2 (ja) * | 2013-09-03 | 2018-02-28 | キヤノン株式会社 | 固体撮像装置の製造方法 |
US20150097213A1 (en) * | 2013-10-04 | 2015-04-09 | Omnivision Technologies, Inc. | Image sensor and pixels including vertical overflow drain |
WO2017039038A1 (ko) * | 2015-09-04 | 2017-03-09 | 재단법인 다차원 스마트 아이티 융합시스템 연구단 | 다중 필팩터가 적용된 이미지 센서 |
US11107853B2 (en) * | 2018-10-19 | 2021-08-31 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus |
JP7190648B2 (ja) * | 2018-12-20 | 2022-12-16 | パナソニックIpマネジメント株式会社 | 固体撮像素子、及び、固体撮像素子の製造方法 |
FR3093376B1 (fr) * | 2019-03-01 | 2022-09-02 | Isorg | Capteur d'images couleur et infrarouge |
US11228430B2 (en) | 2019-09-12 | 2022-01-18 | General Electric Technology Gmbh | Communication systems and methods |
CN110649056B (zh) * | 2019-09-30 | 2022-02-18 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
Family Cites Families (14)
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KR20040036087A (ko) | 2002-10-23 | 2004-04-30 | 주식회사 하이닉스반도체 | 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법 |
JP4742523B2 (ja) * | 2004-06-14 | 2011-08-10 | ソニー株式会社 | 固体撮像素子及びその駆動方法 |
JP4507769B2 (ja) | 2004-08-31 | 2010-07-21 | ソニー株式会社 | 固体撮像素子、カメラモジュール及び電子機器モジュール |
KR100684878B1 (ko) | 2005-01-24 | 2007-02-20 | 삼성전자주식회사 | 빛의 파장에 따라 다른 두께의 메몰 베리어층을 구비하는이미지 센서 및 그 형성 방법 |
US7812381B2 (en) | 2005-01-24 | 2010-10-12 | Samsung Electronics Co., Ltd. | Image sensor with light receiving region having different potential energy according to wavelength of light and electronic product employing the same |
KR100660714B1 (ko) * | 2005-12-29 | 2006-12-21 | 매그나칩 반도체 유한회사 | 백사이드 조명 구조의 씨모스 이미지 센서 및 그의 제조방법 |
JP2007201267A (ja) * | 2006-01-27 | 2007-08-09 | Fujifilm Corp | 固体撮像素子およびその製造方法 |
US7423306B2 (en) * | 2006-09-27 | 2008-09-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor devices |
JP4659788B2 (ja) * | 2007-06-22 | 2011-03-30 | 富士フイルム株式会社 | 裏面照射型撮像素子 |
JP4751865B2 (ja) | 2007-09-10 | 2011-08-17 | 富士フイルム株式会社 | 裏面照射型固体撮像素子及びその製造方法 |
KR101152389B1 (ko) * | 2007-09-13 | 2012-06-05 | 삼성전자주식회사 | 이미지 센서와 그 제조 방법 |
JP2009081169A (ja) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | 固体撮像素子 |
JP5245572B2 (ja) * | 2008-06-26 | 2013-07-24 | 富士通セミコンダクター株式会社 | 半導体装置及び携帯型電子機器 |
JP5428479B2 (ja) * | 2009-04-13 | 2014-02-26 | ソニー株式会社 | 固体撮像装置の製造方法、固体撮像装置、および電子機器 |
-
2009
- 2009-11-25 JP JP2009267550A patent/JP5478217B2/ja active Active
-
2010
- 2010-08-04 WO PCT/JP2010/004906 patent/WO2011064920A1/ja active Application Filing
- 2010-08-04 CN CN201080052831.3A patent/CN102668083B/zh active Active
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2012
- 2012-05-03 US US13/462,895 patent/US8680640B2/en active Active
Also Published As
Publication number | Publication date |
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JP2011114068A (ja) | 2011-06-09 |
US20120211851A1 (en) | 2012-08-23 |
CN102668083B (zh) | 2014-09-03 |
WO2011064920A1 (ja) | 2011-06-03 |
CN102668083A (zh) | 2012-09-12 |
US8680640B2 (en) | 2014-03-25 |
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